JP6054282B2 - 高表面品質GaNウェーハおよびその製造方法 - Google Patents
高表面品質GaNウェーハおよびその製造方法 Download PDFInfo
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 21
- 239000002002 slurry Substances 0.000 claims description 93
- 238000005498 polishing Methods 0.000 claims description 80
- 238000000034 method Methods 0.000 claims description 58
- 239000002245 particle Substances 0.000 claims description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 27
- 239000000126 substance Substances 0.000 claims description 26
- 239000008119 colloidal silica Substances 0.000 claims description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 12
- 238000005406 washing Methods 0.000 claims 3
- 235000012431 wafers Nutrition 0.000 description 171
- 239000013078 crystal Substances 0.000 description 53
- 229910002601 GaN Inorganic materials 0.000 description 36
- 230000008569 process Effects 0.000 description 30
- 229910003460 diamond Inorganic materials 0.000 description 27
- 239000010432 diamond Substances 0.000 description 27
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 24
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 21
- 238000005530 etching Methods 0.000 description 20
- 239000010408 film Substances 0.000 description 19
- 230000002378 acidificating effect Effects 0.000 description 18
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 16
- 230000035882 stress Effects 0.000 description 15
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 14
- 230000007547 defect Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 239000007800 oxidant agent Substances 0.000 description 12
- 239000000843 powder Substances 0.000 description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 10
- 239000002253 acid Substances 0.000 description 10
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- 229910001018 Cast iron Inorganic materials 0.000 description 7
- 239000003082 abrasive agent Substances 0.000 description 7
- 238000007517 polishing process Methods 0.000 description 7
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000000137 annealing Methods 0.000 description 6
- 238000003486 chemical etching Methods 0.000 description 6
- CEJLBZWIKQJOAT-UHFFFAOYSA-N dichloroisocyanuric acid Chemical compound ClN1C(=O)NC(=O)N(Cl)C1=O CEJLBZWIKQJOAT-UHFFFAOYSA-N 0.000 description 6
- 238000000879 optical micrograph Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910021529 ammonia Inorganic materials 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000004626 scanning electron microscopy Methods 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910021485 fumed silica Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 229910052580 B4C Inorganic materials 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000010959 steel Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001739 density measurement Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000007730 finishing process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000000399 optical microscopy Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
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- C09K3/1409—Abrasive particles per se
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
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- H01L21/02002—Preparing wafers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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Description
200nm未満の粒子寸法を有する研磨アモルファスシリカ粒子と、
少なくとも1種の酸と、
場合により、少なくとも1種の酸化剤と
を含むCMPスラリーを用い、CMPスラリーのpH値は約0.5〜約4の範囲にある方法を意図する。
200nm未満の粒子寸法を有する研磨コロイダルアルミナ粒子と、
少なくとも1種の酸と、
場合により、少なくとも1種の酸化剤と
を含むCMPスラリーを用い、CMPスラリーのpH値は約3〜約5の範囲にある方法に関する。
200nm未満の粒子寸法を有するアモルファスシリカ粒子と、
少なくとも1種の塩基と、
場合により、少なくとも1種の酸化剤と
を含むCMPスラリーを用い、CMPスラリーのpH値は約8〜約13.5の範囲にある方法に関する。
AlxGayInzNウェーハを供給する工程、
上述の本発明のCMP方法の1つに従って、ウェーハをそのGa側にて化学的機械研磨する工程、
研磨したAlxGayInzNウェーハを洗浄および乾燥する工程、および
ウェーハ中の欠陥密度を測定するために原子間力顕微鏡または走査型電子顕微鏡でウェーハをスキャンする工程を含む方法に関する。
約100μm〜約1000μmの範囲にある厚さを有するAlxGayInzNウェーハブランクを供給する工程、
場合により、AlxGayInzNウェーハの内部応力を低下させる工程、
場合により、約5μm〜約15μmの範囲にある平均粒子寸法を有する研磨材を含むラッピングスラリーを用いてAlxGayInzNウェーハブランクをそのN側にてラッピングする工程、
場合により、約0.1μm〜約6μmの範囲にある平均粒子寸法を有する研磨材を含む機械研磨スラリーを用いてAlxGayInzNウェーハブランクをそのN側にて機械研磨する工程、
場合により、約5μm〜約15μmの範囲にある平均粒子寸法を有する研磨材を含むラッピングスラリーを用いてAlxGayInzNウェーハブランクをそのGa側にてラッピングする工程、
約0.1μm〜約6μmの範囲にある平均粒子寸法を有する研磨材を含む機械研磨スラリーを用いてAlxGayInzNウェーハブランクをそのGa側にて機械研磨する工程、
少なくとも1種の化学反応物質と200nm未満の平均粒子寸法を有する研磨コロイダル粒子とを含むCMPスラリーを用いてAlxGayInzNウェーハをそのGa側にて化学的機械研磨する工程、および
場合により、AlxGayInzNウェーハの内部応力を更に低下させ、および表面品質を向上させるようにマイルド(または穏やかに)エッチングする工程を含み、得られるAlxGayInzNウェーハは、ウェーハのGa側における10×10μm2面積内で1nm未満の根二乗平均(RMS)表面粗さを有する方法に関する。
また、マイルドエッチングはN側表面のダメージも除去でき、よって、表面ダメージにより生じるウェーハにおけるストレスを低下させることができる。また、このマイルドエッチングはN側表面をマット仕上げすることもできる。例えば、ウェーハは塩基(例えばKOHまたはNaOH)の水溶液または酸(例えばHF、H2SO4またはH3PO4)の水溶液中で、水溶液の沸点(典型的には約100℃)未満の温度にてわずかにエッチングすることができる。
このことはCMPプロセスが完了しないと表面および準表面ダメージが完全に除去されないことを示している。
このコロイダルアルミナ系スラリーにより表面/準表面ダメージを完全に除去するには、はるかに長い研磨時間が必要である。
従って、研磨前に塩基性シリカスラリーを濾過して、大きい粒子を除去し、およびそのようなスラリー中の研磨粒子が200nm未満の粒子寸法を有することを確保するのが望ましい。
0×10μm2面積内で0.28nmであった。3枚のウェーハについてのピット密度は約106〜107ピット/cm2であり、ピット寸法は直径約0.4μm未満であった。
Claims (6)
- フリースタンディングAlxGayInzNウェーハ(式中、0<y≦1およびx+y+z=1)の製造方法であって、該製造方法はAlxGayInzNウェーハのAlxGayInz側をコロイダルシリカスラリーを用いて化学機械研磨した後に、該AlxGayInzNウェーハから残留コロイダルシリカ粒子を洗浄により除去する工程を有する製造方法。
- 前記洗浄に希フッ酸を用いる、請求項1の製造方法。
- 前記AlxGayInzNウェーハのAlxGayInz側には機械研磨スクラッチが存在し、前記化学機械研磨により該機械研磨スクラッチが除去される、請求項1または2に記載の製造方法。
- フリースタンディングGaNウェーハの製造方法であって、GaNウェーハのGa側を、コロイダルシリカスラリーを用いて化学機械研磨した後に、該GaNウェーハから残留コロイダルシリカ粒子を洗浄により除去する工程を有する製造方法。
- 前記洗浄に希フッ酸を用いる、請求項4の製造方法。
- 前記GaNウェーハのGa側には機械研磨スクラッチが存在し、前記化学機械研磨により該機械研磨スクラッチが除去される、請求項4または5に記載の製造方法。
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