JP5542258B2 - 液晶表示装置 - Google Patents
液晶表示装置 Download PDFInfo
- Publication number
- JP5542258B2 JP5542258B2 JP2010225677A JP2010225677A JP5542258B2 JP 5542258 B2 JP5542258 B2 JP 5542258B2 JP 2010225677 A JP2010225677 A JP 2010225677A JP 2010225677 A JP2010225677 A JP 2010225677A JP 5542258 B2 JP5542258 B2 JP 5542258B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide semiconductor
- conductive film
- semiconductor layer
- region
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134327—Segmented, e.g. alpha numeric display
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134345—Subdivided pixels, e.g. for grey scale or redundancy
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/13624—Active matrix addressed cells having more than one switching element per pixel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/40—Arrangements for improving the aperture ratio
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0439—Pixel structures
- G09G2300/0443—Pixel structures with several sub-pixels for the same colour in a pixel, not specifically used to display gradations
- G09G2300/0447—Pixel structures with several sub-pixels for the same colour in a pixel, not specifically used to display gradations for multi-domain technique to improve the viewing angle in a liquid crystal display, such as multi-vertical alignment [MVA]
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3648—Control of matrices with row and column drivers using an active matrix
Description
本実施の形態では、一例として、薄膜トランジスタ(以下、TFTともいう)及び当該TFTに接続された画素電極として機能する電極(単に画素電極ともいう)について示し、液晶表示装置の説明をする。なお画素とは、表示装置の各画素に設けられた各素子、例えば薄膜トランジスタ、画素電極として機能する電極、及び配線等の電気的な信号により表示を制御するための素子で構成される素子群、のことをいう。なお画素は、カラーフィルター等を含むものであっても良く、一画素によって、明るさを制御できる色要素一つ分としてもよい。よって、一例として、RGBの色要素からなるカラー表示装置の場合には、画像の最小単位は、Rの画素とGの画素とBの画素との三画素から構成されるものとなり、複数の画素によって画像を得ることができるものとなる。
上記実施の形態とは別のTFTの構成の表示装置の画素を構成する例を以下に説明する。
上記実施の形態とは別のTFTの構成の表示装置の画素を構成する例を以下に説明する。
本実施の形態においては、液晶表示装置に適用できる画素の構成及び画素の動作について説明する。
本実施の形態においては、上記実施の形態で説明した液晶表示装置を具備する電子機器の例について説明する。
101 配線
102 配線
103 酸化物半導体層
104 容量線
105 画素電極
106 薄膜トランジスタ
111 基板
112 下地膜
113 ゲート絶縁膜
114 酸化物絶縁層
121 開口部
400 画素
401 配線
402 配線
403 酸化物半導体層
404 容量線
405 画素電極
406 薄膜トランジスタ
411 基板
412 下地膜
413 ゲート絶縁膜
414 酸化物絶縁層
700 基板
701 画素
702 画素部
703 走査線駆動回路
704 信号線駆動回路
880 画素
881 トランジスタ
882 液晶素子
883 容量素子
884 配線
885 配線
886 配線
887 配線
984 信号
985 信号
986 電圧
102A 配線
102B 配線
1080 画素
1081 トランジスタ
1082 液晶素子
1083 容量素子
1084 配線
1085 配線
1086 配線
1088 画素電極
402A 配線
402B 配線
601A 絶縁層
601B 絶縁層
9630 筐体
9631 表示部
9633 スピーカ
9635 操作キー
9636 接続端子
9638 マイクロフォン
9672 記録媒体読込部
9676 シャッターボタン
9677 受像部
9680 外部接続ポート
9681 ポインティングデバイス
Claims (4)
- 第1の導電膜と、
第2の導電膜と、
第3の導電膜と、
トランジスタと、を有し、
前記トランジスタは、酸化物半導体層を有し、
前記酸化物半導体層は、インジウムと、ガリウムと、亜鉛とを有し、
前記酸化物半導体層は、結晶性を有し、
前記第1の導電膜は、前記トランジスタのゲートとして機能する第1の領域を有し、
前記トランジスタは、前記ゲートと重なる領域の前記酸化物半導体層に、チャネル形成領域を有し、
前記チャネル形成領域上に接する、酸化物絶縁層を有し、
前記酸化物絶縁層は、酸化珪素を有し、
前記第1の導電膜は、前記酸化物半導体層のチャネル幅方向の端を越えた第2の領域を有し、
前記第1の導電膜は、前記ゲートとして機能する第1の領域より幅の小さい第3の領域を有し、
前記第3の領域は、走査線として機能し、
前記第2の導電膜は、信号線として機能し、
前記信号線は、前記トランジスタのソース又はドレインの一方と電気的に接続され、
前記トランジスタのソース又はドレインの他方は、前記第3の導電膜と電気的に接続され、
前記第3の導電膜は、画素電極と電気的に接続され、
前記第2の導電膜および前記第3の導電膜は、前記酸化物半導体層上に形成された導電層をエッチングする工程を経て形成され、
前記酸化物半導体層は、チャネル幅方向の長さが、前記チャネル形成領域のチャネル長よりも大きい領域を有し、
前記酸化物半導体層は、チャネル長方向の長さが、前記第1の導電膜の前記第3の領域の幅よりも大きい領域を有する
ことを特徴とする液晶表示装置。 - 第1の導電膜と、
第2の導電膜と、
第3の導電膜と、
トランジスタと、を有し、
前記トランジスタは、酸化物半導体層を有し、
前記酸化物半導体層は、インジウムと、ガリウムと、亜鉛とを有し、
前記酸化物半導体層は、結晶性を有し、
前記第1の導電膜は、前記トランジスタのゲートとして機能する第1の領域を有し、
前記トランジスタは、前記ゲートと重なる領域の前記酸化物半導体層に、チャネル形成領域を有し、
前記チャネル形成領域上に接する、酸化物絶縁層を有し、
前記酸化物絶縁層は、酸化珪素を有し、
前記第1の導電膜は、前記酸化物半導体層のチャネル幅方向の端を越えた第2の領域を有し、
前記第1の導電膜は、前記ゲートとして機能する第1の領域より幅の小さい第3の領域を有し、
前記第3の領域は、走査線として機能し、
前記第2の導電膜は、信号線として機能し、
前記信号線は、前記トランジスタのソース又はドレインの一方と電気的に接続され、
前記トランジスタのソース又はドレインの他方は、前記第3の導電膜と電気的に接続され、
前記第3の導電膜は、画素電極と電気的に接続され、
前記第2の導電膜および前記第3の導電膜は、前記酸化物半導体層上に形成された導電層をエッチングする工程を経て形成され、
前記酸化物半導体層は、チャネル幅方向の長さが、前記酸化物半導体層に重なる前記第2の導電膜の端から、前記酸化物半導体層に重なる前記第3の導電膜の端までの距離よりも大きい領域を有し、
前記酸化物半導体層は、チャネル長方向の長さが、前記第1の導電膜の前記第3の領域の幅よりも大きい領域を有する
ことを特徴とする液晶表示装置。 - 第1の導電膜と、
第2の導電膜と、
第3の導電膜と、
トランジスタと、
容量と、を有し、
前記トランジスタは、酸化物半導体層を有し、
前記酸化物半導体層は、インジウムと、ガリウムと、亜鉛とを有し、
前記酸化物半導体層は、結晶性を有し、
前記第1の導電膜は、前記トランジスタのゲートとして機能する第1の領域を有し、
前記トランジスタは、前記ゲートと重なる領域の前記酸化物半導体層に、チャネル形成領域を有し、
前記チャネル形成領域上に接する、酸化物絶縁層を有し、
前記酸化物絶縁層は、酸化珪素を有し、
前記第1の導電膜は、前記酸化物半導体層のチャネル幅方向の端を越えた第2の領域を有し、
前記第1の導電膜は、前記ゲートとして機能する第1の領域より幅の小さい第3の領域を有し、
前記第3の領域は、走査線として機能し、
前記第2の導電膜は、信号線として機能し、
前記信号線は、前記トランジスタのソース又はドレインの一方と電気的に接続され、
前記トランジスタのソース又はドレインの他方は、前記第3の導電膜と電気的に接続され、
前記第3の導電膜は、画素電極と電気的に接続され、
前記第2の導電膜および前記第3の導電膜は、前記酸化物半導体層上に形成された導電層をエッチングする工程を経て形成され、
前記酸化物半導体層は、チャネル幅方向の長さが、前記チャネル形成領域のチャネル長よりも大きい領域を有し、
前記酸化物半導体層は、チャネル長方向の長さが、前記第1の導電膜の前記第3の領域の幅よりも大きい領域を有し、
前記容量が有する容量線は、前記チャネル形成領域と重ならず、
前記容量が有する容量線は、前記チャネル形成領域のチャネル長方向と沿う方向に延在した領域を有し、
前記容量が有する容量線は、前記画素電極と重なる
ことを特徴とする液晶表示装置。 - 第1の導電膜と、
第2の導電膜と、
第3の導電膜と、
トランジスタと、
容量と、を有し、
前記トランジスタは、酸化物半導体層を有し、
前記酸化物半導体層は、インジウムと、ガリウムと、亜鉛とを有し、
前記酸化物半導体層は、結晶性を有し、
前記第1の導電膜は、前記トランジスタのゲートとして機能する第1の領域を有し、
前記トランジスタは、前記ゲートと重なる領域の前記酸化物半導体層に、チャネル形成領域を有し、
前記チャネル形成領域上に接する、酸化物絶縁層を有し、
前記酸化物絶縁層は、酸化珪素を有し、
前記第1の導電膜は、前記酸化物半導体層のチャネル幅方向の端を越えた第2の領域を有し、
前記第1の導電膜は、前記ゲートとして機能する第1の領域より幅の小さい第3の領域を有し、
前記第3の領域は、走査線として機能し、
前記第2の導電膜は、信号線として機能し、
前記信号線は、前記トランジスタのソース又はドレインの一方と電気的に接続され、
前記トランジスタのソース又はドレインの他方は、前記第3の導電膜と電気的に接続され、
前記第3の導電膜は、画素電極と電気的に接続され、
前記第2の導電膜および前記第3の導電膜は、前記酸化物半導体層上に形成された導電層をエッチングする工程を経て形成され、
前記酸化物半導体層は、チャネル幅方向の長さが、前記酸化物半導体層に重なる前記第2の導電膜の端から、前記酸化物半導体層に重なる前記第3の導電膜の端までの距離よりも大きい領域を有し、
前記酸化物半導体層は、チャネル長方向の長さが、前記第1の導電膜の前記第3の領域の幅よりも大きい領域を有し、
前記容量が有する容量線は、前記チャネル形成領域と重ならず、
前記容量が有する容量線は、前記チャネル形成領域のチャネル長方向と沿う方向に延在した領域を有し、
前記容量が有する容量線は、前記画素電極と重なる
ことを特徴とする液晶表示装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010225677A JP5542258B2 (ja) | 2009-10-09 | 2010-10-05 | 液晶表示装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009235287 | 2009-10-09 | ||
JP2009235287 | 2009-10-09 | ||
JP2010225677A JP5542258B2 (ja) | 2009-10-09 | 2010-10-05 | 液晶表示装置 |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012168007A Division JP5225493B2 (ja) | 2009-10-09 | 2012-07-30 | 液晶表示装置 |
JP2013033164A Division JP2013109375A (ja) | 2009-10-09 | 2013-02-22 | 液晶表示装置 |
JP2014094966A Division JP2014170239A (ja) | 2009-10-09 | 2014-05-02 | 表示装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011100117A JP2011100117A (ja) | 2011-05-19 |
JP2011100117A5 JP2011100117A5 (ja) | 2013-07-18 |
JP5542258B2 true JP5542258B2 (ja) | 2014-07-09 |
Family
ID=43854579
Family Applications (12)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010225677A Active JP5542258B2 (ja) | 2009-10-09 | 2010-10-05 | 液晶表示装置 |
JP2012168007A Active JP5225493B2 (ja) | 2009-10-09 | 2012-07-30 | 液晶表示装置 |
JP2013033164A Withdrawn JP2013109375A (ja) | 2009-10-09 | 2013-02-22 | 液晶表示装置 |
JP2014094966A Withdrawn JP2014170239A (ja) | 2009-10-09 | 2014-05-02 | 表示装置 |
JP2015106188A Withdrawn JP2015165329A (ja) | 2009-10-09 | 2015-05-26 | 表示装置 |
JP2016005283A Withdrawn JP2016066101A (ja) | 2009-10-09 | 2016-01-14 | 液晶表示装置 |
JP2017097929A Active JP6393801B2 (ja) | 2009-10-09 | 2017-05-17 | 液晶表示装置 |
JP2018158221A Active JP6642951B2 (ja) | 2009-10-09 | 2018-08-27 | 表示装置 |
JP2020000043A Active JP6857751B2 (ja) | 2009-10-09 | 2020-01-05 | 表示装置 |
JP2021047318A Active JP7161562B2 (ja) | 2009-10-09 | 2021-03-22 | 表示装置 |
JP2022165383A Active JP7309028B2 (ja) | 2009-10-09 | 2022-10-14 | 表示装置 |
JP2023109855A Pending JP2023126290A (ja) | 2009-10-09 | 2023-07-04 | 表示装置 |
Family Applications After (11)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012168007A Active JP5225493B2 (ja) | 2009-10-09 | 2012-07-30 | 液晶表示装置 |
JP2013033164A Withdrawn JP2013109375A (ja) | 2009-10-09 | 2013-02-22 | 液晶表示装置 |
JP2014094966A Withdrawn JP2014170239A (ja) | 2009-10-09 | 2014-05-02 | 表示装置 |
JP2015106188A Withdrawn JP2015165329A (ja) | 2009-10-09 | 2015-05-26 | 表示装置 |
JP2016005283A Withdrawn JP2016066101A (ja) | 2009-10-09 | 2016-01-14 | 液晶表示装置 |
JP2017097929A Active JP6393801B2 (ja) | 2009-10-09 | 2017-05-17 | 液晶表示装置 |
JP2018158221A Active JP6642951B2 (ja) | 2009-10-09 | 2018-08-27 | 表示装置 |
JP2020000043A Active JP6857751B2 (ja) | 2009-10-09 | 2020-01-05 | 表示装置 |
JP2021047318A Active JP7161562B2 (ja) | 2009-10-09 | 2021-03-22 | 表示装置 |
JP2022165383A Active JP7309028B2 (ja) | 2009-10-09 | 2022-10-14 | 表示装置 |
JP2023109855A Pending JP2023126290A (ja) | 2009-10-09 | 2023-07-04 | 表示装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8482690B2 (ja) |
JP (12) | JP5542258B2 (ja) |
KR (2) | KR20120083341A (ja) |
CN (2) | CN103984176B (ja) |
TW (2) | TWI655486B (ja) |
WO (1) | WO2011043217A1 (ja) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101778513B1 (ko) | 2009-10-09 | 2017-09-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 표시 장치 및 이를 포함한 전자 기기 |
US8603841B2 (en) | 2010-08-27 | 2013-12-10 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing methods of semiconductor device and light-emitting display device |
JP5806043B2 (ja) | 2010-08-27 | 2015-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8797487B2 (en) | 2010-09-10 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Transistor, liquid crystal display device, and manufacturing method thereof |
US8647919B2 (en) | 2010-09-13 | 2014-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting display device and method for manufacturing the same |
US8558960B2 (en) | 2010-09-13 | 2013-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Liquid crystal display device and method for manufacturing the same |
US8546161B2 (en) | 2010-09-13 | 2013-10-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film transistor and liquid crystal display device |
KR101789236B1 (ko) * | 2010-12-24 | 2017-10-24 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 평판 표시 장치 |
JP5936908B2 (ja) * | 2011-05-20 | 2016-06-22 | 株式会社半導体エネルギー研究所 | パリティビット出力回路およびパリティチェック回路 |
JP6122275B2 (ja) | 2011-11-11 | 2017-04-26 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP6076038B2 (ja) * | 2011-11-11 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
JP2013206994A (ja) * | 2012-03-27 | 2013-10-07 | Toppan Printing Co Ltd | 薄膜トランジスタおよび画像表示装置 |
JP6001308B2 (ja) * | 2012-04-17 | 2016-10-05 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US8779592B2 (en) * | 2012-05-01 | 2014-07-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Via-free interconnect structure with self-aligned metal line interconnections |
TWI607510B (zh) * | 2012-12-28 | 2017-12-01 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
WO2014104265A1 (en) | 2012-12-28 | 2014-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US9915848B2 (en) * | 2013-04-19 | 2018-03-13 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
TWI649606B (zh) | 2013-06-05 | 2019-02-01 | 日商半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
CN104345511B (zh) * | 2014-09-30 | 2017-09-15 | 南京中电熊猫液晶显示科技有限公司 | 像素结构及其制造方法、显示面板 |
TWI546850B (zh) * | 2014-11-14 | 2016-08-21 | 群創光電股份有限公司 | 顯示面板之製備方法 |
JP6618779B2 (ja) * | 2014-11-28 | 2019-12-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN107112365A (zh) * | 2014-12-25 | 2017-08-29 | 夏普株式会社 | 半导体装置 |
CN104849930B (zh) * | 2015-05-29 | 2017-10-13 | 合肥鑫晟光电科技有限公司 | 阵列基板及其制作方法以及显示装置 |
TWI597830B (zh) * | 2016-05-13 | 2017-09-01 | 群創光電股份有限公司 | 顯示裝置 |
WO2018087631A1 (en) | 2016-11-09 | 2018-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device, display module, electronic device, and method for manufacturing the display device |
JP6963906B2 (ja) | 2017-04-25 | 2021-11-10 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
KR102562943B1 (ko) * | 2018-09-12 | 2023-08-02 | 엘지디스플레이 주식회사 | 표시 장치 |
CN110942708B (zh) * | 2018-09-21 | 2021-08-27 | 元太科技工业股份有限公司 | 导电结构、线路设计及显示器 |
JP2021128271A (ja) * | 2020-02-14 | 2021-09-02 | 株式会社ジャパンディスプレイ | 表示装置及び表示装置用アレイ基板 |
KR20240035540A (ko) * | 2021-07-20 | 2024-03-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
Family Cites Families (162)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0816757B2 (ja) * | 1988-11-18 | 1996-02-21 | シャープ株式会社 | 透過型アクティブマトリクス液晶表示装置 |
JPH03127030A (ja) * | 1989-10-13 | 1991-05-30 | Sharp Corp | 表示電極基板の製造方法 |
JPH05291343A (ja) * | 1992-04-10 | 1993-11-05 | Miyagi Oki Denki Kk | 半導体装置 |
JPH06160900A (ja) * | 1992-11-20 | 1994-06-07 | Sanyo Electric Co Ltd | 液晶表示装置 |
JP3373620B2 (ja) * | 1993-10-21 | 2003-02-04 | 株式会社東芝 | 液晶表示装置 |
EP0820644B1 (en) | 1995-08-03 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Semiconductor device provided with transparent switching element |
JPH09105952A (ja) * | 1995-10-11 | 1997-04-22 | Toshiba Electron Eng Corp | アクティブマトリクス型液晶表示装置 |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP3512955B2 (ja) * | 1996-09-09 | 2004-03-31 | 株式会社東芝 | 液晶表示装置 |
US6486023B1 (en) * | 1997-10-31 | 2002-11-26 | Texas Instruments Incorporated | Memory device with surface-channel peripheral transistor |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
TW452669B (en) | 1999-03-18 | 2001-09-01 | Sanyo Electric Co | Active matrix type display device |
TW527735B (en) | 1999-06-04 | 2003-04-11 | Semiconductor Energy Lab | Electro-optical device |
JP4730994B2 (ja) | 1999-06-04 | 2011-07-20 | 株式会社半導体エネルギー研究所 | 電気光学装置及びその作製方法並びに電子装置 |
TW500937B (en) * | 1999-07-13 | 2002-09-01 | Samsung Electronics Co Ltd | Liquid crystal display |
JP2001036087A (ja) | 1999-07-15 | 2001-02-09 | Seiko Epson Corp | アクティブマトリクス基板、電気光学装置及び電子機器 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP2001117115A (ja) | 1999-10-21 | 2001-04-27 | Sanyo Electric Co Ltd | アクティブマトリクス型表示装置 |
JP3420135B2 (ja) | 1999-10-26 | 2003-06-23 | 日本電気株式会社 | アクティブマトリクス基板の製造方法 |
US6885064B2 (en) | 2000-01-07 | 2005-04-26 | Samsung Electronics Co., Ltd. | Contact structure of wiring and a method for manufacturing the same |
JP5244274B2 (ja) * | 2000-04-28 | 2013-07-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
JP2003050405A (ja) * | 2000-11-15 | 2003-02-21 | Matsushita Electric Ind Co Ltd | 薄膜トランジスタアレイ、その製造方法およびそれを用いた表示パネル |
JP4954366B2 (ja) | 2000-11-28 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP3914753B2 (ja) * | 2000-11-30 | 2007-05-16 | Nec液晶テクノロジー株式会社 | アクティブマトリクス型液晶表示装置およびスイッチング素子 |
TW586141B (en) | 2001-01-19 | 2004-05-01 | Semiconductor Energy Lab | Semiconductor device and method of manufacturing the same |
TW490857B (en) * | 2001-02-05 | 2002-06-11 | Samsung Electronics Co Ltd | Thin film transistor array substrate for liquid crystal display and method of fabricating same |
KR20030027302A (ko) * | 2001-09-28 | 2003-04-07 | 삼성전자주식회사 | 저유전율 절연막을 사용하는 박막 트랜지스터 기판 및 그제조 방법 |
SG118117A1 (en) | 2001-02-28 | 2006-01-27 | Semiconductor Energy Lab | Semiconductor device and manufacturing method thereof |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
KR100743101B1 (ko) * | 2001-05-07 | 2007-07-27 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 및 그 제조방법과 이를 이용한 화소리페어방법 |
JP4709442B2 (ja) | 2001-08-28 | 2011-06-22 | 株式会社 日立ディスプレイズ | 薄膜トランジスタの製造方法 |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
JP4305811B2 (ja) * | 2001-10-15 | 2009-07-29 | 株式会社日立製作所 | 液晶表示装置、画像表示装置およびその製造方法 |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
WO2003040441A1 (en) | 2001-11-05 | 2003-05-15 | Japan Science And Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP2003173153A (ja) | 2001-12-06 | 2003-06-20 | Matsushita Electric Ind Co Ltd | 信号線の配線方法および薄膜トランジスタアレイ基板 |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
US7049190B2 (en) | 2002-03-15 | 2006-05-23 | Sanyo Electric Co., Ltd. | Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4118705B2 (ja) | 2003-02-25 | 2008-07-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
KR100947525B1 (ko) * | 2003-03-12 | 2010-03-12 | 삼성전자주식회사 | 액정 표시 장치용 박막 트랜지스터 기판 및 이의 제조방법 |
KR20040084488A (ko) * | 2003-03-28 | 2004-10-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 이를 포함하는 액정 표시 장치 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
JP2005019627A (ja) | 2003-06-25 | 2005-01-20 | Toshiba Matsushita Display Technology Co Ltd | 液晶表示装置 |
JP4023399B2 (ja) * | 2003-06-25 | 2007-12-19 | カシオ計算機株式会社 | 配線用ケーブル、折畳式電子機器及びケーブル配線方法 |
KR100698048B1 (ko) | 2003-06-26 | 2007-03-23 | 엘지.필립스 엘시디 주식회사 | 액정표시장치 |
KR100947538B1 (ko) * | 2003-06-27 | 2010-03-12 | 삼성전자주식회사 | 노광 방법 및 이를 이용한 액정 표시 장치용 박막트랜지스터 기판의 제조 방법 |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
JP4483235B2 (ja) * | 2003-09-01 | 2010-06-16 | カシオ計算機株式会社 | トランジスタアレイ基板の製造方法及びトランジスタアレイ基板 |
KR101090245B1 (ko) * | 2003-12-10 | 2011-12-06 | 삼성전자주식회사 | 박막 트랜지스터 표시판 |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
KR101078483B1 (ko) | 2004-03-12 | 2011-10-31 | 도꾸리쯔교세이호징 가가꾸 기쥬쯔 신꼬 기꼬 | Lcd 또는 유기 el 디스플레이의 스위칭 소자 |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
TWI382264B (zh) | 2004-07-27 | 2013-01-11 | Samsung Display Co Ltd | 薄膜電晶體陣列面板及包括此面板之顯示器裝置 |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
EP1810335B1 (en) | 2004-11-10 | 2020-05-27 | Canon Kabushiki Kaisha | Light-emitting device |
EP2455975B1 (en) | 2004-11-10 | 2015-10-28 | Canon Kabushiki Kaisha | Field effect transistor with amorphous oxide |
JP5138163B2 (ja) | 2004-11-10 | 2013-02-06 | キヤノン株式会社 | 電界効果型トランジスタ |
US7868326B2 (en) | 2004-11-10 | 2011-01-11 | Canon Kabushiki Kaisha | Field effect transistor |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI412138B (zh) | 2005-01-28 | 2013-10-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI445178B (zh) | 2005-01-28 | 2014-07-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
WO2006105077A2 (en) | 2005-03-28 | 2006-10-05 | Massachusetts Institute Of Technology | Low voltage thin film transistor with high-k dielectric material |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
EP3614442A3 (en) | 2005-09-29 | 2020-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having oxide semiconductor layer and manufactoring method thereof |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
CN101707212B (zh) | 2005-11-15 | 2012-07-11 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
US8212953B2 (en) | 2005-12-26 | 2012-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
JP5121221B2 (ja) | 2005-12-26 | 2013-01-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
US20070215945A1 (en) * | 2006-03-20 | 2007-09-20 | Canon Kabushiki Kaisha | Light control device and display |
JP5369367B2 (ja) * | 2006-03-28 | 2013-12-18 | 凸版印刷株式会社 | 薄膜トランジスタおよびその製造方法 |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
KR101243809B1 (ko) * | 2006-06-30 | 2013-03-18 | 엘지디스플레이 주식회사 | 박막트랜지스터의 제조방법 및 이를 이용한 tft 어레이기판의 제조방법 |
JP5376774B2 (ja) * | 2006-07-21 | 2013-12-25 | 三星ディスプレイ株式會社 | 液晶表示装置 |
KR101217182B1 (ko) | 2006-07-28 | 2012-12-31 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판, 이의 제조방법 및 이를 갖는표시패널 |
KR20080011826A (ko) * | 2006-07-31 | 2008-02-11 | 삼성전자주식회사 | 유기 박막 트랜지스터 기판 및 이의 제조방법 |
JP4946250B2 (ja) * | 2006-08-07 | 2012-06-06 | ソニー株式会社 | 液晶表示装置 |
JP4404881B2 (ja) * | 2006-08-09 | 2010-01-27 | 日本電気株式会社 | 薄膜トランジスタアレイ、その製造方法及び液晶表示装置 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP2008042043A (ja) | 2006-08-09 | 2008-02-21 | Hitachi Ltd | 表示装置 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
CN100454558C (zh) | 2006-09-11 | 2009-01-21 | 北京京东方光电科技有限公司 | 一种tft矩阵结构及其制造方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
JP5116277B2 (ja) | 2006-09-29 | 2013-01-09 | 株式会社半導体エネルギー研究所 | 半導体装置、表示装置、液晶表示装置、表示モジュール及び電子機器 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
JP5305630B2 (ja) * | 2006-12-05 | 2013-10-02 | キヤノン株式会社 | ボトムゲート型薄膜トランジスタの製造方法及び表示装置の製造方法 |
KR101146574B1 (ko) * | 2006-12-05 | 2012-05-16 | 캐논 가부시끼가이샤 | 산화물 반도체를 이용한 박막 트랜지스터의 제조방법 및 표시장치 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
JP5014810B2 (ja) * | 2007-01-17 | 2012-08-29 | 株式会社ジャパンディスプレイイースト | 表示装置およびその製造方法 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
JP5109424B2 (ja) * | 2007-03-20 | 2012-12-26 | 凸版印刷株式会社 | 反射型表示装置 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
JP5406449B2 (ja) * | 2007-05-30 | 2014-02-05 | キヤノン株式会社 | 酸化物半導体を用いた薄膜トランジスタの製造方法および表示装置 |
KR101092483B1 (ko) * | 2007-05-31 | 2011-12-13 | 캐논 가부시끼가이샤 | 산화물 반도체를 사용한 박막트랜지스터의 제조 방법 |
US20090001881A1 (en) | 2007-06-28 | 2009-01-01 | Masaya Nakayama | Organic el display and manufacturing method thereof |
JP2009031750A (ja) | 2007-06-28 | 2009-02-12 | Fujifilm Corp | 有機el表示装置およびその製造方法 |
JP2009099887A (ja) | 2007-10-19 | 2009-05-07 | Hitachi Displays Ltd | 表示装置 |
CN101430463A (zh) * | 2007-11-09 | 2009-05-13 | 上海广电Nec液晶显示器有限公司 | 液晶显示装置及其制作方法 |
JP2009122601A (ja) * | 2007-11-19 | 2009-06-04 | Seiko Epson Corp | 液晶装置の製造方法 |
KR101375831B1 (ko) * | 2007-12-03 | 2014-04-02 | 삼성전자주식회사 | 산화물 반도체 박막 트랜지스터를 이용한 디스플레이 장치 |
JP5215158B2 (ja) | 2007-12-17 | 2013-06-19 | 富士フイルム株式会社 | 無機結晶性配向膜及びその製造方法、半導体デバイス |
KR101425131B1 (ko) * | 2008-01-15 | 2014-07-31 | 삼성디스플레이 주식회사 | 표시 기판 및 이를 포함하는 표시 장치 |
KR101412761B1 (ko) * | 2008-01-18 | 2014-07-02 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
CN101552277A (zh) * | 2008-04-03 | 2009-10-07 | 上海广电Nec液晶显示器有限公司 | 薄膜晶体管阵列基板及其制造方法 |
US9041202B2 (en) | 2008-05-16 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
CN102160103B (zh) * | 2008-09-19 | 2013-09-11 | 株式会社半导体能源研究所 | 显示装置 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
JP5439878B2 (ja) * | 2009-03-13 | 2014-03-12 | セイコーエプソン株式会社 | 半導体装置の製造方法、半導体装置、電気光学装置および電子機器 |
KR101778513B1 (ko) * | 2009-10-09 | 2017-09-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 표시 장치 및 이를 포함한 전자 기기 |
-
2010
- 2010-09-21 WO PCT/JP2010/066746 patent/WO2011043217A1/en active Application Filing
- 2010-09-21 KR KR1020127006891A patent/KR20120083341A/ko active Search and Examination
- 2010-09-21 CN CN201410253700.1A patent/CN103984176B/zh active Active
- 2010-09-21 KR KR1020147013659A patent/KR101424950B1/ko active IP Right Grant
- 2010-09-21 CN CN201080046493.2A patent/CN102576174B/zh active Active
- 2010-09-30 TW TW099133320A patent/TWI655486B/zh active
- 2010-09-30 TW TW103117615A patent/TWI464486B/zh active
- 2010-10-04 US US12/897,289 patent/US8482690B2/en active Active
- 2010-10-05 JP JP2010225677A patent/JP5542258B2/ja active Active
-
2012
- 2012-07-30 JP JP2012168007A patent/JP5225493B2/ja active Active
-
2013
- 2013-02-22 JP JP2013033164A patent/JP2013109375A/ja not_active Withdrawn
-
2014
- 2014-05-02 JP JP2014094966A patent/JP2014170239A/ja not_active Withdrawn
-
2015
- 2015-05-26 JP JP2015106188A patent/JP2015165329A/ja not_active Withdrawn
-
2016
- 2016-01-14 JP JP2016005283A patent/JP2016066101A/ja not_active Withdrawn
-
2017
- 2017-05-17 JP JP2017097929A patent/JP6393801B2/ja active Active
-
2018
- 2018-08-27 JP JP2018158221A patent/JP6642951B2/ja active Active
-
2020
- 2020-01-05 JP JP2020000043A patent/JP6857751B2/ja active Active
-
2021
- 2021-03-22 JP JP2021047318A patent/JP7161562B2/ja active Active
-
2022
- 2022-10-14 JP JP2022165383A patent/JP7309028B2/ja active Active
-
2023
- 2023-07-04 JP JP2023109855A patent/JP2023126290A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2017194691A (ja) | 2017-10-26 |
JP2014170239A (ja) | 2014-09-18 |
KR20120083341A (ko) | 2012-07-25 |
JP2018197878A (ja) | 2018-12-13 |
JP2013109375A (ja) | 2013-06-06 |
JP2016066101A (ja) | 2016-04-28 |
JP2023126290A (ja) | 2023-09-07 |
CN103984176B (zh) | 2016-01-20 |
TWI655486B (zh) | 2019-04-01 |
JP2015165329A (ja) | 2015-09-17 |
WO2011043217A1 (en) | 2011-04-14 |
TW201435432A (zh) | 2014-09-16 |
CN102576174B (zh) | 2018-02-23 |
KR20140066802A (ko) | 2014-06-02 |
TW201207531A (en) | 2012-02-16 |
JP7309028B2 (ja) | 2023-07-14 |
JP6642951B2 (ja) | 2020-02-12 |
JP2022186813A (ja) | 2022-12-15 |
CN103984176A (zh) | 2014-08-13 |
JP2011100117A (ja) | 2011-05-19 |
US8482690B2 (en) | 2013-07-09 |
JP5225493B2 (ja) | 2013-07-03 |
JP2021113974A (ja) | 2021-08-05 |
KR101424950B1 (ko) | 2014-08-01 |
JP6393801B2 (ja) | 2018-09-19 |
JP2020074012A (ja) | 2020-05-14 |
JP2012252349A (ja) | 2012-12-20 |
JP6857751B2 (ja) | 2021-04-14 |
JP7161562B2 (ja) | 2022-10-26 |
US20110085104A1 (en) | 2011-04-14 |
CN102576174A (zh) | 2012-07-11 |
TWI464486B (zh) | 2014-12-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6393801B2 (ja) | 液晶表示装置 | |
JP6163519B2 (ja) | 液晶表示装置 | |
US20190355873A1 (en) | Light-emitting display device and electronic device including the same | |
KR101839931B1 (ko) | 액정 표시 장치, 액정 표시 장치의 구동 방법, 및 이 액정 표시 장치를 구비하는 전자기기 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120730 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130530 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20130530 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130910 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20130911 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131004 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20131023 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20140318 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140408 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140430 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140505 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5542258 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |