JP5481067B2 - 代替活性エリア材料の集積回路への組み込みのための解決策 - Google Patents
代替活性エリア材料の集積回路への組み込みのための解決策 Download PDFInfo
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- Ceramic Engineering (AREA)
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
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Description
本願は、2005年7月26日付出願の米国特許仮出願第60/702363号明細書の利益を主張するものであり、その開示全体は、参照により本願に組み込まれる。
本発明は、代替の活性領域の材料を含む構造を形成するための方法及び材料に関する。
Claims (7)
- 結晶基板上に設けられた第1のマスク層内に形成されている第1の開口部に設けられた第1の活性エリア材料、
前記第1の活性エリア材料の直上に設けられた第2の活性エリア材料である第1の層、
前記第1のマスク層内に形成された第2の開口部内に設けられた、前記第1の活性エリア材料とは異なる第3の活性エリア材料、
前記第3の活性エリア材料の直上に設けられた第4の活性エリア材料である第2の層、
前記第2の活性エリア材料の少なくとも一部を含む第1のデバイス、及び
前記第4の活性エリア材料の少なくとも一部を含む第2のデバイス
を含み、
前記第1の活性エリア材料が、前記第4の活性エリア材料と同じであり、
前記第2の活性エリア材料が、前記第3の活性エリア材料と同じであり、
前記第2の活性エリア材料がIII−V半導体材料を含み、前記第4の活性エリア材料がIV半導体材料を含む、構造。 - 前記第1及び第3の活性エリア材料が、少なくとも部分的に緩和されており、前記第2及び第4の活性エリア材料が、歪んでいる、請求項1に記載の構造。
- 前記第1及び第3の活性エリア材料が、完全に緩和されている、請求項2に記載の構造。
- 第1のソース領域及び第1のドレイン領域がそれぞれ、前記第1の層内のみに設けられている、請求項1から3のいずれか1項に記載の構造。
- 第2のソース領域及び第2のドレイン領域がそれぞれ、前記第2の層内のみに設けられている、請求項4に記載の構造。
- 前記第1のデバイスがNMOSトランジスタであり、前記第2のデバイスがPMOSトランジスタである、請求項1から5のいずれか1項に記載の構造。
- 前記第2の活性エリア材料が、InP、InAs、InSb及びInGaAsの少なくとも1つを含み、前記第4の活性エリア材料が、Si及びGeの少なくとも一方を含む、請求項1から6のいずれか1項に記載の構造。
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US70236305P | 2005-07-26 | 2005-07-26 | |
US60/702,363 | 2005-07-26 | ||
PCT/US2006/029247 WO2007014294A2 (en) | 2005-07-26 | 2006-07-26 | Solutions integrated circuit integration of alternative active area materials |
Publications (3)
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JP2009503871A JP2009503871A (ja) | 2009-01-29 |
JP2009503871A5 JP2009503871A5 (ja) | 2009-09-10 |
JP5481067B2 true JP5481067B2 (ja) | 2014-04-23 |
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JP2008524156A Active JP5481067B2 (ja) | 2005-07-26 | 2006-07-26 | 代替活性エリア材料の集積回路への組み込みのための解決策 |
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US (1) | US7626246B2 (ja) |
EP (1) | EP1911086A2 (ja) |
JP (1) | JP5481067B2 (ja) |
KR (1) | KR101329388B1 (ja) |
CN (1) | CN101268547B (ja) |
WO (1) | WO2007014294A2 (ja) |
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KR20080032234A (ko) | 2008-04-14 |
CN101268547B (zh) | 2014-07-09 |
JP2009503871A (ja) | 2009-01-29 |
US20070181977A1 (en) | 2007-08-09 |
WO2007014294A2 (en) | 2007-02-01 |
US7626246B2 (en) | 2009-12-01 |
EP1911086A2 (en) | 2008-04-16 |
KR101329388B1 (ko) | 2013-11-14 |
CN101268547A (zh) | 2008-09-17 |
WO2007014294A3 (en) | 2007-08-30 |
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