JP2009503871A - 代替活性エリア材料の集積回路への組み込みのための解決策 - Google Patents
代替活性エリア材料の集積回路への組み込みのための解決策 Download PDFInfo
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- JP2009503871A JP2009503871A JP2008524156A JP2008524156A JP2009503871A JP 2009503871 A JP2009503871 A JP 2009503871A JP 2008524156 A JP2008524156 A JP 2008524156A JP 2008524156 A JP2008524156 A JP 2008524156A JP 2009503871 A JP2009503871 A JP 2009503871A
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Abstract
Description
本願は、2005年7月26日付出願の米国特許仮出願第60/702363号明細書の利益を主張するものであり、その開示全体は、参照により本願に組み込まれる。
本発明は、代替の活性領域の材料を含む構造を形成するための方法及び材料に関する。
Claims (64)
- 構造を形成する方法であって、
結晶半導体材料を含む基板を設け、
前記基板上にマスク層を形成し、
前記マスク層において窓を画定し、
前記窓を、選択エピタキシャル法によって活性エリア材料で充填し、
前記活性エリア材料の少なくとも一部を含むデバイスを画定する
ことを含む、方法。 - 前記活性エリア材料の表面を、前記マスク層の表面と実質的に同一平面となるように平坦化することをさらに含む、請求項1に記載の方法。
- 構造を形成する方法であって、
結晶半導体材料を含む基板を設け、
前記半導体材料に、第1のシャロートレンチアイソレーション領域を画定し、
前記基板上に薄い誘電層を画定し、
前記薄い誘電層において窓を画定し、前記第1のシャロートレンチアイソレーション領域に囲まれている前記半導体材料の一部を露出させ、
前記半導体材料の露出した部分を除去して、開口部を画定し、
前記開口部を、選択エピタキシャル法によって活性エリア材料で充填し、
薄い誘電層を選択的に除去し、
前記活性エリア材料の少なくとも一部を含むデバイスを画定する
ことを含む、方法。 - 前記活性エリア材料の表面を、前記薄い誘電層の表面と実質的に同一平面となるように平坦化することをさらに含む、請求項3に記載の方法。
- 前記基板が、ウェハに接合する層を含み、該層が、結晶半導体材料を含む、請求項3に記載の方法。
- 前記結晶半導体材料が、第1の結晶配向を有し、前記活性エリア材料が、前記第1の結晶配向とは異なる第2の結晶配向を有する第2の結晶半導体材料を含む、請求項5に記載の方法。
- 前記半導体材料内に第2のシャロートレンチアイソレーション領域を画定することをさらに含む、請求項3に記載の方法。
- 前記第1のシャロートレンチアイソレーション領域の幅の、前記第2のシャロートレンチアイソレーション領域の幅に対する比が、1より大きい、請求項7に記載の方法。
- 前記幅の比が、1.2〜3の範囲から選択される、請求項8に記載の方法。
- 構造を形成する方法であって、
結晶半導体材料を含む基板を設け、
前記半導体材料に、第1のシャロートレンチアイソレーション領域を画定し、
前記基板上に薄い誘電層を画定し、
前記薄い誘電層において窓を画定して、第1のシャロートレンチアイソレーション領域の一部を露出させ、
前記第1のシャロートレンチアイソレーション領域の露出した部分を除去して、開口部を画定し、
前記開口部を、選択エピタキシャル法によって活性エリア材料で充填し、
前記薄い誘電層を選択的に除去し、
前記活性エリア材料の少なくとも一部を含むデバイスを画定する
ことを含む、方法。 - 前記活性エリア材料の表面を、前記薄い誘電層の表面と実質的に同一平面となるように平坦化することをさらに含む、請求項10に記載の方法。
- 前記半導体材料において、第2のシャロートレンチアイソレーション領域を画定することをさらに含み、前記第1のシャロートレンチアイソレーション領域の残された部分の幅の、前記第2のシャロートレンチアイソレーション領域の幅に対する比が、1より大きい、請求項10に記載の方法。
- 前記比が、1.2〜3の範囲から選択される、請求項12に記載の方法。
- 第1の活性エリア材料を含み、且つ第1の幅を有する第1のシャロートレンチアイソレーション領域によって囲まれている第1の活性エリアと、
第2の活性エリア材料を含み、且つ第2の幅を有する第2のシャロートレンチアイソレーション領域によって囲まれれている第2の活性エリアと
を備えており、前記第1の幅の、前記第2の幅に対する比が1より大きい、構造。 - 前記第1の活性エリア材料が、Ge、SiGe、SiC、ダイヤモンド、III−V半導体及びII−VI半導体を含む群から選択される半導体であり、前記第2の活性エリア材料がSiを含む、請求項14に記載の構造。
- 前記第1の活性エリア材料が、第1の結晶配向を有し、第2の活性エリア材料が、第1の結晶配向とは異なる第2の結晶配向を有する、請求項14に記載の構造。
- 前記第1の幅の、前記第2の幅に対する比が、1.2〜3の範囲から選択される請求項14に記載の構造。
- 構造を形成する方法であって、
結晶材料を含む基板を設け、
前記基板上に第1のマスク層を形成し、
前記第1のマスク層において第1の開口部を画定し、前記基板の第1の領域において前記基板の第1の部分を露出させ、
前記第1の開口部を、選択エピタキシャル法によって第1の活性エリア材料で充填し、
前記第1のマスク層において第2の開口部を画定し、前記基板の第2の領域において前記第2の部分を露出させ、
前記第2の開口部を、選択エピタキシャル法によって第2の活性エリア材料で充填し、
前記第1の活性エリア材料の少なくとも一部を含む第1のデバイスを画定し、
前記第2の活性エリア材料の少なくとも一部を含む第2のデバイスを画定する
ことを含む、方法。 - 前記第2の開口部を前記第2の活性エリア材料で充填する前に、前記基板の第1の領域上に第2のマスク層を形成し、
前記第2の開口部を前記第2の活性エリア材料で充填した後に、前記第1の領域上の第2のマスク層を除去する
ことをさらに含む、請求項18に記載の方法。 - 前記第2のマスク層を除去した後、前記第1の活性エリア材料の表面と、前記第2の活性エリア材料の表面とを平坦化することをさらに含む、請求項19に記載の方法。
- 第1の分離領域、
第1の半導体材料を含み且つ前記第1の分離領域によって囲まれている第1の活性エリア、
第2の分離領域、及び
前記第1の半導体材料とは異なる第2の半導体材料を含み且つ前記第2の分離領域によって囲まれている第2の活性エリア、
を含み、前記第1の半導体材料の表面、前記第2の半導体材料の表面、前記第1の分離領域の表面及び前記第2の分離領域の表面が、全て実質的に同一平面となっている、構造。 - 前記第1の半導体材料が、第1の結晶配向を有し、前記第2の半導体材料が、前記第1の結晶配向とは異なる第2の結晶配向を有する、請求項21に記載の構造。
- 前記第1の半導体材料が、Ge、InAs、InGaAs、InSb、GaAs及びInPからなる群から選択され、前記第2の半導体材料が、Si及びGeの少なくとも一方を含む、請求項21に記載の構造。
- 第1の活性エリア材料を含む第1のチャネルと、第1のソース領域及び第1のドレイン領域とを有するn−FETと、
第2の活性エリア材料を含む第2のチャネルと、第2のソース領域及び第2のドレイン領域とを有するp−FETとを備えており、
前記第1のソース領域及び第1のドレイン領域並びに前記第2のソース領域及び第2のドレイン領域が、同じソース/ドレイン材料を含む、構造。 - 前記第1のチャネルが、引張り歪みを有する、請求項24に記載の構造。
- 前記第2のチャネルが、圧縮歪みを有する、請求項24に記載の構造。
- 前記第1のソース及び第1のドレイン領域における前記ソース/ドレイン材料の少なくとも一部が、第1及び第2の切欠内に設けられており、前記第2のソース及び第2のドレイン領域における前記ソース/ドレイン材料の少なくとも一部が、第3及び第4の切欠内に設けられており、前記ソース/ドレイン材料の格子定数が、前記第1の活性エリア材料の格子定数より小さく、前記第2の活性エリア材料の格子定数より大きい、請求項24に記載の構造。
- 前記第1のソース及び第1のドレイン領域における前記ソース/ドレイン材料の少なくとも一部が、第1及び第2の切欠内に設けられており、前記第2のソース及び第2のドレイン領域におけるソース/ドレイン材料の少なくとも一部が、第3及び第4の切欠内にも受けられており、前記ソース/ドレイン材料の格子定数が、前記第1の活性エリア材料の格子定数より大きく、前記第2の活性エリア材料の格子定数より小さい、請求項24に記載の構造。
- 前記第1のソース及び第1のドレイン領域における前記ソース/ドレイン材料の少なくとも一部が、第1及び第2の切欠内に設けられており、前記第2のソース及び第2のドレイン領域におけるソース/ドレイン材料が、第2の活性エリア材料の上面に設けられており、前記ソース/ドレイン材料の格子定数が、前記第1の活性エリア材料の格子定数より小さく、前記第2の活性エリア材料の格子定数より小さい、請求項24に記載の構造。
- 前記ソース/ドレイン材料がIV族半導体を含む、請求項29に記載の構造。
- 前記第1のソース及び第1のドレイン領域における前記ソース/ドレイン材料が、第1の活性エリア材料の上面に設けられており、前記第2のソース及び第2のドレイン領域におけるソース/ドレイン材料の少なくとも一部が、第3及び第4の切欠内に設けられており、前記ソース/ドレイン材料の格子定数が、前記第1の活性エリア材料の格子定数より大きく、前記第2の活性エリア材料の格子定数より大きい、請求項24に記載の構造。
- デバイスを形成する方法であって、
基板の第1の領域に第1の活性エリア材料を設け、
前記基板の第2の領域に第2の活性エリア材料を設け、
前記第1の活性エリア材料の第1の部分及び第2の分を除去して第1及び第2の切欠を画定し、該第1及び第2の切欠内にソース/ドレイン材料を堆積させることによって、第1のソース及び第1のドレインを画定し、
前記第2の活性エリア材料の第1の部分及び第2の部分を除去して第3及び第4の切欠を画定し、該第3及び第4の切欠内にソース/ドレイン材料を堆積させることによって、第2のソース及び第2のドレインを画定し、
前記第1の活性エリア材料の、前記第1のソースと前記第1のドレインとの間に設けられているチャネルを有する第1のデバイスを画定し、
前記第2の活性エリア材料の、前記第2のソースと前記第2のドレインとの間に設けられているチャネルを有する第2のデバイスを画定する、方法。 - 前記第1、第2、第3及び第4の切欠を画定することが、前記第1及び第2の活性エリア材料をほぼ同じ速度で除去する非選択的エッチングを含む、請求項32に記載の方法。
- 前記第1の活性エリア材料において第1及び第2の切欠を画定することが、前記第2の活性エリア材料に対して高い選択性を有するエッチングを含む、請求項32に記載の方法。
- 前記第2の活性エリア材料において第3及び第4の切欠を画定することが、前記第1の活性エリア材料に対して高い選択性を有するエッチングを含む、請求項32に記載の方法。
- 構造を形成する方法であって、
基板を設け、
前記基板の第1の部分上に第1の活性エリア材料を設け、
前記基板の第2の部分上に第2の活性エリア材料を設け、
前記第1及び第2の活性エリア材料上に、薄層を堆積させ、
前記薄層上に、ゲート誘電層を形成し、
前記第1の活性エリア材料を含む第1のデバイスを形成し、
前記第2の活性エリア材料を含む第2のデバイスを形成する
ことを含む、方法。 - 前記第1のデバイスがn−FETを含み、前記第2のデバイスがp−FETを含む、請求項36に記載の方法。
- 第1の活性エリア材料を含む第1の活性エリア、
前記第1の活性エリア材料とは異なる第2の活性エリア材料を含む第2の活性エリア、
前記第1の活性エリア材料及び前記第2の活性エリア材料上に設けられた薄層、及び
前記薄層上に設けられたゲート誘電層を含む、構造。 - 前記第1の活性エリア材料及び第2の活性エリア材料がそれぞれ、Ge、SiGe、SiC、ダイヤモンド、III−V半導体及びII−VI半導体から選択され、前記薄層がSiを含む、請求項38に記載の構造。
- 前記ゲート誘電層が、SiO2、SiON、Si3N4及び高誘電率誘電体からなる群から選択される、請求項38に記載の構造。
- 構造を形成する方法であって、
基板を設け、
前記基板の第1の部分上に第1の活性エリア材料を設け、
前記基板の第2の部分上に第2の活性エリア材料を設け、
前記第1の活性エリア材料上に第1のゲート誘電層を形成し、
前記第2の活性エリア材料上に第2のゲート誘電層を形成し、
前記第1及び第2の活性エリア材料上に第1の電極層を堆積させ、
前記第2の活性エリア材料上に設けられた第1の電極層の一部を除去し、
前記第1及び第2の活性エリア上に第2の電極層を堆積させ、
前記基板上に設けられている層を平坦化して、前記第1の活性エリア材料上の第1の電極層の表面と、前記第2の活性エリア材料上の第2の電極層の表面とを含む同一表面を画定し、
前記第1の活性エリア材料を含む第1のデバイスを形成し、
前記第2の活性エリア材料を含む第2のデバイスを形成する
ことを含む、方法。 - 前記第1のデバイスがn−FETを含む、請求項41に記載の方法。
- 前記第1の電極層が、インジウム、タンタル、ジルコニウム、タングステン、モリブデン、クロム、スズ、亜鉛、コバルト、ニッケル、レニウム、ルテニウム、白金、チタン、ハフニウム、シリコン及び窒素からなる群から選択される少なくとも1つの材料を含む、請求項42に記載の方法。
- 前記第2のデバイスがp−FETを含む、請求項41に記載の方法。
- 前記第2の電極層が、銅、モリブデン、クロム、タングステン、ルテニウム、タンタル、ジルコニウム、白金、ハフニウム、チタン、コバルト、ニッケル、シリコン及び窒素からなる群から選択される少なくとも1つの材料を含む、請求項44に記載の方法。
- 第1の活性エリア材料を含む第1の活性エリア、
前記第1の活性エリア材料とは異なる第2の活性エリア材料を含む第2の活性エリア材料、
前記第1の活性エリア材料上に設けられた第1のゲート電極材料、及び
前記第2の活性エリア材料上に設けられた、第1のゲート電極材料とは異なる第2の電極材料を備えており、
前記第1のゲート電極材料が、インジウム、タンタル、ジルコニウム、タングステン、モリブデン、クロム、スズ、亜鉛、コバルト、ニッケル、レニウム、ルテニウム、白金、チタン、ハフニウム、シリコン及び窒素からなる群から選択される少なくとも1つの材料を含み、前記第2のゲート電極材料が、銅、モリブデン、クロム、タングステン、ルテニウム、タンタル、ジルコニウム、白金、ハフニウム、チタン、コバルト、ニッケル、シリコン及び窒素からなる群から選択される少なくとも1つの材料を含む、構造。 - 構造を形成する方法であって、
結晶半導体材料を含む基板を設け、
前記基板上にマスク層を形成し、
前記マスク層内に窓を画定し、
前記窓を、選択エピタキシャル法によって第1の活性エリア材料で少なくとも部分的に充填し、
前記第1の活性エリア材料上に、選択エピタキシャル法によって第2の活性エリア材料を形成し、
前記第2の活性エリア材料の少なくとも一部を含むデバイスを画定する、方法。 - 構造を形成する方法であって、
結晶材料を含む基板を設け、
前記基板上に第1のマスク層を形成し、
前記第1のマスク層において第1の開口部を画定し、前記基板の第1の領域で前記基板の第1の部分を露出させ、
前記第1の開口部を、選択エピタキシャル法によって第1の活性エリア材料で充填し、
前記第1のマスク層において第2の開口部を画定し、前記基板の第2の領域で前記基板の第2の部分を露出させ、
前記第2の開口部を、選択エピタキシャル法によって第3の活性エリア材料で充填し、
前記第2の活性エリア材料上に、選択エピタキシャル法によって第4の活性エリア材料を含む第2の層を形成し、
前記第2の活性エリア材料の少なくとも一部を含む第1のデバイスを画定し、
前記第4の活性エリア材料の少なくとも一部を含む第2のデバイスを画定する
ことを含む、方法。 - 前記第1のデバイスが、第1の歪みを有する第1のチャネルを含み、前記第2のデバイスが、第2の歪みを有する第2のチャネルを含み、前記第1の歪みの大きさが、前記第2の歪みの大きさにほぼ等しく、前記第1の歪みの符号が、前記第2の歪みの符号の逆である、請求項48に記載の方法。
- 前記第1の歪みの大きさが、約1.5%より大きい、請求項49に記載の方法。
- 前記第1の活性エリア材料が、前記第4の活性エリア材料と実質的に同じである、請求項48に記載の方法。
- 前記第2の活性エリア材料が、前記第3の活性エリア材料と実質的に同じである、請求項51に記載の方法。
- 前記第2の活性エリア材料が、前記第3の活性エリア材料と実質的に同じである、請求項48に記載の方法。
- 半導体基板上に設けられたマスク層において画定されている窓を少なくとも部分的に充填している第1の活性エリア材料、
前記第1の活性エリア材料上に設けられた第2の活性エリア材料、及び
前記第2の活性エリア材料の少なくとも一部を含むデバイス
を含む、構造。 - 結晶基板上に設けられた第1のマスク層内に画定されている第1の開口部に設けられた第1の活性エリア材料、
前記第1の活性エリア材料上に設けられた第2の活性エリア材料を含む第1の層、
前記第1のマスク層内に画定された第2の開口部内に設けられた第3の活性エリア材料、
前記第3の活性エリア材料上に設けられた第4の活性エリア材料を含む第2の層、
前記第2の活性エリア材料の少なくとも一部を含む第1のデバイス、及び
前記第4の活性エリア材料の少なくとも一部を含む第2のデバイス
を含む、構造。 - 前記第1及び第3の活性エリア材料が、少なくとも部分的に緩和されており、前記第2及び第4の活性エリア材料が、実質的に歪んでいる、請求項55に記載の構造。
- 前記第1及び第3の活性エリア材料が、ほぼ完全に緩和されている、請求項56に記載の構造。
- 前記第1のデバイスが、前記第1の活性エリア材料上に設けられた第1のソース領域及び第1のドレイン領域を含むトランジスタである、請求項55に記載の構造。
- 前記第1のソース領域及び前記第1のドレイン領域がそれぞれ、前記第1の層内に設けられている、請求項58に記載の構造。
- 前記第2のデバイスが、前記第3の活性エリア材料上に設けられた第2のソース領域及び前記第2のドレイン領域を含むトランジスタである、請求項58に記載の構造。
- 前記第2のソース領域及び第2のドレイン領域がそれぞれ、前記第2の層内に設けられている、請求項60に記載の構造。
- 前記第1のデバイスがNMOSトランジスタであり、前記第2のデバイスがPMOSトランジスタである、請求項60に記載の構造。
- 前記第2の活性エリア材料がIII−V半導体材料を含み、前記第4の活性エリア材料がIV半導体材料を含む、請求項55に記載の構造。
- 前記第2の活性エリア材料が、InP、InAs、InSb及びInGaAsの少なくとも1つを含み、前記第4の活性エリア材料が、Si及びGeの少なくとも一方を含む、請求項63に記載の構造。
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JP5481067B2 (ja) | 2014-04-23 |
US20070181977A1 (en) | 2007-08-09 |
CN101268547A (zh) | 2008-09-17 |
US7626246B2 (en) | 2009-12-01 |
WO2007014294A2 (en) | 2007-02-01 |
KR20080032234A (ko) | 2008-04-14 |
EP1911086A2 (en) | 2008-04-16 |
KR101329388B1 (ko) | 2013-11-14 |
WO2007014294A3 (en) | 2007-08-30 |
CN101268547B (zh) | 2014-07-09 |
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