FR3091622B1 - Structure semi-conductrice optoélectronique comprenant une couche d’injection de type p à base d’InGaN - Google Patents

Structure semi-conductrice optoélectronique comprenant une couche d’injection de type p à base d’InGaN Download PDF

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Publication number
FR3091622B1
FR3091622B1 FR1900190A FR1900190A FR3091622B1 FR 3091622 B1 FR3091622 B1 FR 3091622B1 FR 1900190 A FR1900190 A FR 1900190A FR 1900190 A FR1900190 A FR 1900190A FR 3091622 B1 FR3091622 B1 FR 3091622B1
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layer
type injection
ingan
injection layer
semiconductor structure
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FR1900190A
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FR3091622A1 (fr
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Mariia Rozhavskaia
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Soitec SA
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Soitec SA
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Priority to FR1900190A priority Critical patent/FR3091622B1/fr
Priority to TW108147701A priority patent/TWI796539B/zh
Priority to PCT/EP2019/087037 priority patent/WO2020144072A1/fr
Priority to CN201980090762.6A priority patent/CN113396484B/zh
Priority to US17/415,574 priority patent/US11901483B2/en
Priority to EP19828788.0A priority patent/EP3909083A1/fr
Publication of FR3091622A1 publication Critical patent/FR3091622A1/fr
Application granted granted Critical
Publication of FR3091622B1 publication Critical patent/FR3091622B1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H01L31/035263—Doping superlattices, e.g. nipi superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L’invention porte sur une structure semi-conductrice optoélectronique (SC) comprenant une couche active (6) à base d’InGaN disposée entre une couche d'injection de type n (5) et une couche d'injection de type p (7), la couche d'injection de type p (7) comprenant une première couche (7a) d'InGaN et, disposée sur cette première couche (7a), une deuxième couche (7b) constituée d’une pluralité de couches élémentaires d’AlGaInN, chaque couche élémentaire présentant une épaisseur inférieure à son épaisseur critique de relaxation, deux couches élémentaires consécutives présentant des compositions d’aluminium et/ou d’indium et/ou de gallium différentes. Figure à publier avec l’abrégé : Fig. 1
FR1900190A 2019-01-09 2019-01-09 Structure semi-conductrice optoélectronique comprenant une couche d’injection de type p à base d’InGaN Active FR3091622B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR1900190A FR3091622B1 (fr) 2019-01-09 2019-01-09 Structure semi-conductrice optoélectronique comprenant une couche d’injection de type p à base d’InGaN
TW108147701A TWI796539B (zh) 2019-01-09 2019-12-25 包含基於ingan之p型注入層之光電半導體結構
PCT/EP2019/087037 WO2020144072A1 (fr) 2019-01-09 2019-12-26 Structure semi-conductrice optoélectronique comprenant une couche d'injection de type p à base d'ingan
CN201980090762.6A CN113396484B (zh) 2019-01-09 2019-12-26 包含基于InGaN的P型注入层的光电半导体结构
US17/415,574 US11901483B2 (en) 2019-01-09 2019-12-26 Optoelectronic semiconductor structure comprising a p-type injection layer based on InGaN
EP19828788.0A EP3909083A1 (fr) 2019-01-09 2019-12-26 Structure semi-conductrice optoélectronique comprenant une couche d'injection de type p à base d'ingan

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1900190A FR3091622B1 (fr) 2019-01-09 2019-01-09 Structure semi-conductrice optoélectronique comprenant une couche d’injection de type p à base d’InGaN

Publications (2)

Publication Number Publication Date
FR3091622A1 FR3091622A1 (fr) 2020-07-10
FR3091622B1 true FR3091622B1 (fr) 2021-09-17

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FR1900190A Active FR3091622B1 (fr) 2019-01-09 2019-01-09 Structure semi-conductrice optoélectronique comprenant une couche d’injection de type p à base d’InGaN

Country Status (6)

Country Link
US (1) US11901483B2 (fr)
EP (1) EP3909083A1 (fr)
CN (1) CN113396484B (fr)
FR (1) FR3091622B1 (fr)
TW (1) TWI796539B (fr)
WO (1) WO2020144072A1 (fr)

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DE8509328U1 (de) 1985-03-28 1985-10-10 Aluminium-Walzwerke Singen Gmbh, 7700 Singen Verbundelement aus zwei aneinander festliegenden Profilelementen
US5625202A (en) * 1995-06-08 1997-04-29 University Of Central Florida Modified wurtzite structure oxide compounds as substrates for III-V nitride compound semiconductor epitaxial thin film growth
US6657300B2 (en) * 1998-06-05 2003-12-02 Lumileds Lighting U.S., Llc Formation of ohmic contacts in III-nitride light emitting devices
WO2007014294A2 (fr) * 2005-07-26 2007-02-01 Amberwave Systems Corporation Solutions permettant d'integrer des materiaux alternatifs dans des circuits integres
US8000366B2 (en) * 2008-11-21 2011-08-16 Palo Alto Research Center Incorporated Laser diode with high indium active layer and lattice matched cladding layer
KR20100070250A (ko) * 2008-12-17 2010-06-25 삼성엘이디 주식회사 질화물 반도체 발광소자
US8017469B2 (en) * 2009-01-21 2011-09-13 Freescale Semiconductor, Inc. Dual high-k oxides with sige channel
CN102136536A (zh) 2010-01-25 2011-07-27 亚威朗(美国) 应变平衡发光器件
TWI442455B (zh) * 2010-03-29 2014-06-21 Soitec Silicon On Insulator Iii-v族半導體結構及其形成方法
US8426844B2 (en) 2010-08-04 2013-04-23 Lg Innotek Co., Ltd. Light emitting device, light emitting device package, and display device therewith
KR101781435B1 (ko) * 2011-04-13 2017-09-25 삼성전자주식회사 질화물 반도체 발광소자
CN102185057B (zh) * 2011-05-03 2012-11-14 映瑞光电科技(上海)有限公司 一种氮化物led结构及其制备方法
JP5874593B2 (ja) * 2011-12-23 2016-03-02 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子とその製造方法
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FR2992465B1 (fr) * 2012-06-22 2015-03-20 Soitec Silicon On Insulator Procede de fabrication collective de leds et structure pour la fabrication collective de leds
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TWI569467B (zh) * 2015-11-10 2017-02-01 錼創科技股份有限公司 半導體發光元件
GB201701829D0 (en) * 2017-02-03 2017-03-22 Norwegian Univ Of Science And Tech (Ntnu) Device
US10347790B2 (en) * 2017-03-24 2019-07-09 Wisconsin Alumni Research Foundation Group III-V nitride-based light emitting devices having multilayered P-type contacts

Also Published As

Publication number Publication date
CN113396484B (zh) 2024-04-23
US20220093822A1 (en) 2022-03-24
EP3909083A1 (fr) 2021-11-17
FR3091622A1 (fr) 2020-07-10
TWI796539B (zh) 2023-03-21
TW202044601A (zh) 2020-12-01
US11901483B2 (en) 2024-02-13
CN113396484A (zh) 2021-09-14
WO2020144072A1 (fr) 2020-07-16

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