TW202044601A - 包含基於ingan之p型注入層之光電半導體結構 - Google Patents

包含基於ingan之p型注入層之光電半導體結構 Download PDF

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TW202044601A
TW202044601A TW108147701A TW108147701A TW202044601A TW 202044601 A TW202044601 A TW 202044601A TW 108147701 A TW108147701 A TW 108147701A TW 108147701 A TW108147701 A TW 108147701A TW 202044601 A TW202044601 A TW 202044601A
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瑪麗亞 羅沙夫思卡亞
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Abstract

本發明涉及一種光電半導體結構，其包括一主動InGaN層(6)設置在一n型注入層(5)與一p型注入層(7)之間，該p型注入層(6)包含第一InGaN層(7a)，以及設置在該第一層(7a)上由複數個AlGaInN元素層構成之第二層(7b)，每一元素層的厚度小於其臨界鬆弛厚度，且兩個連續的元素層具有不同的鋁及/或銦及/或鎵組成。

Description

包含基於INGAN之P型注入層之光電半導體結構
本發明涉及一種光電半導體結構，例如發光二極體(LED)、雷射二極體或太陽能電池。更詳細而言，本發明涉及包含InGaN製成之P型注入層之光電半導體結構。
光電半導體結構通常由結晶半導體層之堆疊形成，其包含位於n型注入層及p型注入層間之主動層。就LED結構而言，主動層可由交替的阻障層及量子井層構成。為了允許均質且密集的電流通過所述結構，注入層必須足夠厚，例如200奈米以上。
在基於InGaN的結構中，一InGaN 量子井層的銦含量可約為10%，以形成發出藍光的二極體，當二極體發綠光時，銦含量約20%以上，當二極體發紅光時，銦含量約40%以上。阻障層之銦含量低於量子井層。
銦含量越高，量子井層的自然晶格參數(即完全鬆弛層的晶格參數)就越重要。換言之，銦含量越高，當量子井層以特定晶格參數形成於生長支撐件上時，量子井層會受到越大的壓縮應變。
形成光電結構的堆疊中的過大應變可能導致缺陷結構。此限制明顯是在構成所述結構之GaN或InGaN薄膜表面上形成穿線錯位(threading dislocations)或金字塔形缺陷(本技術領域英文文獻中稱之為「V坑(V-pits)」)之起因。該些缺陷將劣化光電結構之功能表現。
在解決此問題方面，已知有文件EP215852或EP215856描述目標為在生長支撐件的InGaN表面島狀物上統一形成半導體結構之製作方法。舉例而言，該些島可具有介於5%及7%之間或更高之銦濃度，且至少部分鬆弛。
其目標為在生長支撐件上生長InGaN之n型注入層，以維持形成生長島表面之材料之晶格參數。此方法可減少底材上所形成之半導體結構之主動區中的應變，促進銦摻入主動層，並提高光電元件的效率。
然而，在那樣的光電半導體結構中形成p型注入層是有問題的。
當p型注入層為GaN製時，其晶格參數與下方之主動InGaN層晶格參數的差異，會對注入層強加高應變並可能造成裂痕。
若p型注入層由InGaN構成，尤其具有高於10%或15%銦濃度的情況下，就必須在相對低的溫度中形成，這將導致施體之材料品質不良及高背景濃度(background concentration)，從而難以達到所需的受體濃度(acceptor concentration)。此外，低受體濃度會增加p型接點之電阻，因而難以實現歐姆接觸(ohmic contact)。提高摻雜物(例如鎂)濃度，以彌補前述現象的做法並不可行，因為其將導致p型注入層的結晶品質下降。已有研究建議，與在單一InGaN均質層中的濃度相比，以超晶格形式形成p型注入層可使該層的平均電洞濃度提升數倍。然而，在p型注入層製作那樣的超晶格非常複雜又費時，因為該層必需相當厚。
本發明之目的即為解決至少部分上述問題。更詳細而言，本發明之目的為形成包含InGaN之p型注入層之光電半導體結構，其具有令人滿意的電特性且可保留結晶特性。
為了達到此目標，本發明提出一種光電半導體結構，其包括一主動InGaN層設置在一n型注入層與一p型注入層之間，該p型注入層包含第一InGaN層，其呈現的厚度範圍從50奈米至300奈米，以及設置在該第一層上之第二層，其由複數個AlGaInN元素層構成，每一元素層的厚度小於其臨界鬆弛厚度，且兩個連續的元素層具有不同的鋁及/或銦及/或鎵組成。
根據本發明其他有利且非限制性特徵，其可以單獨或以任何技術上可行之組合使用： - 該複數個元素層都有在1奈米及30奈米之間的厚度； - 該複數個元素層係透過重複由至少兩個元素層組成之週期性結構而形成； - 所述週期性結構係由InGaN之第一元素層及GaN、AlN或AlGaN之第二元素層構成； - 所述週期性結構係由InGaN之第一元素層構成，且該第一元素層的銦組成在一週期性結構與另一週期性結構中不同； - 該第二層的厚度範圍從150至350奈米； - 該p型注入層的厚度小於400奈米。
圖1描繪複數個光電半導體結構SC(在此例中為LED)被設置在一生長支撐件1上。
該半導體結構SC包含一n型注入層5、一p型注入層7，及設置在所述二層間的LED主動層6。
生長支撐件1為「含島」支撐件，其說明可在本文之引言部分所引述的文件中尋得。所述支撐件包含一基底底材2(例如藍寶石)、一中間層3，其由單一材料或複數個介電材料形成，例如二氧化矽或氮化矽，及複數個至少部分鬆弛之生長島4。
一般而言，生長島4由通式為AlInGaN的材料製成，並具有對應於InGaN層的自然晶格參數的晶格參數，其銦含量在5％和40％之間。
在圖1的示例中，生長島4由InGaN構成，其具有15%的銦含量且為90%鬆弛。
在生長島4上有以習知磊晶技術形成的複數個半導體結構SC。所述技術可為有機金屬化學氣相沉積(英文縮寫為MOCVD)技術或分子束磊晶(MBE)技術。
此處的半導體結構SC由InGaN的n型注入層5形成，其摻雜有諸如濃度約為1018 至1019 cm-3 的矽。該SC的銦濃度約等於構成島4材料之銦濃度，約為13.5%，以匹配兩者的晶格參數或使注入層5稍微受到伸張應變。此層的厚度範圍通常從200奈米至400奈米。
在圖1示例之替代方案中，n型注入層5可製作成超晶格。這可涉及複數個非常薄的AlInGaN元素層(elementary layers)，其厚度小於數十奈米，例如30奈米，且具有相異性質。因此，注入層5可透過重複一週期性結構而形成，所述週期性結構包含InGaN之第一元素層及GaN、AlN或AlGaN之第二元素層。該些元素層皆具有小於其臨界鬆弛厚度(critical relaxation thickness)之厚度。
鋁、銦和鎵的比例，以及組成所述超晶格的每層厚度應被選定，以使具有對應均質組成的層所具有之自然晶格參數，基本上等同於生長島4的晶格參數。換言之，經由XRD測量的注入層5的晶格參數，對應於生長島的晶格參數。在注入層5為均質的情況下，在半導體結構生長期間累積於其中的應變因此受到限制。
回到圖1之說明，該光電半導體結構SC亦包含位於n型注入層5上之主動層6。主動層6由複數個交替的InGaN阻障層-量子井層形成。該些阻障層具有與n型注入層5相似的銦濃度，在此例中約為13.5%。InGaN量子井層具有之銦濃度係根據所期望的發射波長而選定。在示例中，此濃度為25%。
更一般而言，主動層係以InGaN為主。量子井層可由具有第一銦濃度的InGaN製成，而阻障層可由具有低於第一濃度之第二銦濃度之InGaN製成。所述阻障層亦可由GaN或AlGaN製成，但本發明較佳者為主動層之量子井層和阻障層均為InGaN製。此外，由諸如AlGaN製成的薄中間層，可被插入阻障層與量子井層之間。
在主動層6上，半導體結構SC設有一p型注入層7。
注入層7由第一層7a構成，其由p型摻雜的InGaN製成，例如結合濃度約1020 cm-3 的鎂。第一層7a的厚度通常介於50及350奈米之間。此層之晶格參數旨在匹配其下方堆疊之晶格參數，或使該層承受輕微的伸張應力。一般而言，此第一層7a的銦濃度對應於n型注入層5之銦濃度，其在此處約為13.5%。
為了增加受體濃度並改善p型注入層7的導電性和歐姆接觸品質，本發明因此規劃在第一層7a上形成第二層7b。
此第二層7b由多個元素層形成，其由通式為InAlGaN之一材料製成。這些元素層的厚度視其性質而被選定成小於臨界厚度，若大於該厚度則容易形成缺陷(裂痕、金字塔形缺陷)。一般而言，元素層的厚度介於1及30奈米之間。當然，兩個連續的元素層具有不同的鋁及/或銦及/或鎵組成，因此得以界定和區分它們。第二層可處於壓縮或伸張應力下。
所述元素層經過摻雜，至少大部分經過摻雜，以賦予第二層p型的電特性。其可以濃度在10^19及10^22 per cm^3之間的鎂來摻雜。
前述p型注入層7的一般形狀是有利的，原因如下。
首先，與第一層相比，第二層7b沒有或只有很少結構缺陷，例如裂痕或金字塔形缺陷。交疊元素層的多重性亦可限制了殘餘缺陷在該層進行濕式處理過程中可能造成的影響。這能保護半導體結構免於受到製作功能元件有時需要用到之液體製劑的影響。詳細而言，在p型層上沉積形成電接點之金屬立柱(stud)前，可用諸如KOH的液體溶液處理圖1的半導體結構，以使其表面除氧(deoxidize)。
此外，本說明書前文提及的研究已顯示，在由前述複數個摻雜元素層所形成的層中產生電洞型載子，比在均質層中更有效。
第二層7b因而賦予p型注入層的該部分十分有趣的電特性。然而，不必整個p型注入層都由這種元素層組成，因此可預期該注入層的一部分，即第一層7a，將由單一的InGaN層組成。
如此可避免不必要的元素層重複，以利於製作半導體結構。
因此，第一層7a的厚度可介於50及300奈米之間，第二層7b的厚度，即元素層的總厚度，可介於100及350奈米之間。如此便可提供足夠數量的元素層(其每層厚度受到限制以避免超過其各自的臨界厚度)以形成具有選定厚度之第二層。一般而言，p型注入層的總厚度較佳者為小於400奈米，範圍在200奈米及400奈米之間。
為了便於第二層7b的設計與製作，複數個元素層可透過重複由至少兩個元素層組成之週期性結構而形成。此週期性結構以連續及重複數次的方式形成在第一層7a上，其次數足夠形成具有選定厚度之第二層。
這使得週期性結構可由InGaN的第一元素層和GaN、AlN(厚度小於2奈米以避免裂開)或AlGaN(鋁組成小於20%，同樣為了避免裂開和避免降低層的導電性)的第二元素層組成。
該週期性結構中的InGaN第一元素層的銦濃度，在一週期性結構與另一週期性結構中不必然恆定。可考慮從最接近第一層7的第一元素層的初始濃度值去增加或減少銦濃度。這樣，便可形成第二層7b，其對應於具有一銦濃度梯度(concentration gradient)的InGaN均質層。
該週期性結構亦可包含兩個以上的元素層。舉例而言，可提供由InGaN、GaN和AlGaN元素層之堆疊所組成的週期性結構。
無論p型注入層的第二層7b的確切性質為何，其電洞濃度都高於均質InGaN層的電洞濃度，且其具有降低之穿透型(through-type)缺陷密度，從而形成高品質的注入層及歐姆接觸。
當然，本發明不限於此處所述實施方式，且對於實施例所為之各種變化均落入申請專利範圍所界定之範疇。
詳細而言，除了前述主動層6、n型注入層5及p型注入層7外，光電半導體結構SC可包含額外的層。舉例而言，光電半導體結構可包含設置在主動層與p型注入層間的電子阻擋層，此為本發明所屬技術領域所周知。這種阻擋層可由一薄層(通常為20奈米)形成，其銦濃度小於InGaN第一層7a的銦濃度。
雖然本說明書以島狀物形式提出一種生長媒介，但其亦可為其他具有允許生長InGaN為主之光電半導體結構之任何性質之媒介。
1:生長支撐件 2:基底底材 3:中間層 4:生長島 5:n型注入層 6:主動層 7:p型注入層 7a:第一層 7b:第二層
下文之實施方式一節，將更清楚說明本發明其他特徵和優點，實施方式係參照所附圖式說明，其中，圖1繪示根據本發明被設置在一生長支撐件上之一光電半導體結構。
1:生長支撐件
2:基底底材
3:中間層
4:生長島
5:n型注入層
6:主動層
7:p型注入層
7a:第一層
7b:第二層

Claims (7)

  1. 一種光電半導體結構(SC)，其包括一主動InGaN層(6)設置在一n型注入層(5)與一p型注入層(7)之間，該p型注入層(6)包含第一InGaN層(7a)，其呈現的厚度範圍從50奈米至300奈米，以及設置在該第一層(7a)上之第二層(7b)，其由複數個AlGaInN元素層構成，每一元素層的厚度小於其臨界鬆弛厚度，且兩個連續的元素層具有不同的鋁及/或銦及/或鎵組成。
  2. 如申請專利範圍第1項之半導體結構(SC)，其中該複數個元素層都有在1奈米及30奈米之間的厚度。
  3. 如申請專利範圍第1或2項之半導體結構(SC)，其中該複數個元素層係透過重複由至少兩個元素層組成之週期性結構而形成。
  4. 如申請專利範圍第3項之半導體結構(SC)，其中所述週期性結構係由InGaN之第一元素層及GaN、AlN或AlGaN之第二元素層組成。
  5. 如申請專利範圍第3或4項之半導體結構(SC)，其中所述週期性結構係由InGaN之第一元素層組成，且該第一元素層的銦組成在一週期性結構與另一週期性結構中不同。
  6. 如申請專利範圍第1至5項中任一項之半導體結構(SC)，其中該第二層(7b)的厚度範圍從150至350奈米。
  7. 如申請專利範圍第1至6項中任一項之半導體結構(SC)，其中該p型注入層(7)的厚度小於400奈米。
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