JP6382396B2 - 量子井戸トランジスタへのコンタクトを形成する方法 - Google Patents
量子井戸トランジスタへのコンタクトを形成する方法 Download PDFInfo
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- JP6382396B2 JP6382396B2 JP2017109805A JP2017109805A JP6382396B2 JP 6382396 B2 JP6382396 B2 JP 6382396B2 JP 2017109805 A JP2017109805 A JP 2017109805A JP 2017109805 A JP2017109805 A JP 2017109805A JP 6382396 B2 JP6382396 B2 JP 6382396B2
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Description
前述したように、量子井戸トランジスタデバイスのチャネルへのアクセス抵抗の低いソース/ドレインコンタクトを形成することは、かなり難しく、かつ、多数の自明ではない問題を含んでいる。
図1は、本発明の一の実施例による、低抵抗自己整合コンタクトが形成されうる典型的な量子井戸成長構造を表している。当該量子井戸成長構造はたとえば、従来のn+ドーピングされたキャップ層を備えるInGaAsのn型量子井戸構造であってよい。しかし前述したように、本発明の一の実施例により形成される低抵抗自己整合コンタクトは、本開示に照らして明らかなように、任意の数の量子井戸成長構造−たとえばnチャネル金属−酸化物−半導体(nMOS)又はpMOSデバイス−で実装されてよいことに留意して欲しい。請求項に係る発明は、任意の特別な量子井戸成長構造に限定されるものと解されてはならない。
図2〜図8は、本発明の実施例による自己整合コンタクト構造の断面図を表している。明らかなように、コンタクト(たとえばソース、ドレイン、及びゲート)は、図1に図示されたデバイス積層体上又は任意の数の他の量子井戸成長構造上に形成されてよい。中間処理−たとえば平坦化(たとえば化学機械研磨すなわちCMP)及び後続の洗浄プロセス−は、たとえ明示的に論じられなくても、形成方法全体に含まれてよい。
図9は、本発明の一の実施例による、量子井戸構造の低抵抗自己整合コンタクトの形成方法を表している。量子井戸構造は、望むように構成されてよく、かつ一般的には、基板、上部バリア層と下部バリア層との間に設けられる量子井戸層、及びコンタクト層を含む積層体を有する。
Claims (22)
- 量子井戸構造の自己整合コンタクトを形成する方法であって、
前記量子井戸構造上に金属層を堆積する工程と、
前記金属層をエッチングしてゲートトレンチを形成し、前記ゲートトレンチの各側面に直接的に、前記金属層からソースコンタクト及びドレインコンタクトを画定する工程と、
前記ゲートトレンチの側面にスペーサ層を堆積する工程と、
前記ゲートトレンチにゲート金属を堆積して、ゲート電極を形成する工程とを含み、
当該方法が、前記ゲートトレンチの底にhigh-kゲート誘電体を堆積する工程を更に含み、
前記ゲートトレンチ、並びに前記ソースコンタクト及び前記ドレインコンタクトを形成した後で、前記スペーサ層が前記ゲートトレンチの前記側面に堆積され、
前記ゲート金属が、前記high-kゲート誘電体上に形成され、前記スペーサ層が、前記ゲート金属の底面より下にある底面を有する、方法。 - 前記量子井戸構造を有するメサを形成する工程を更に含む、請求項1に記載の方法。
- 前記量子井戸構造を有するメサを形成する工程が、
前記量子井戸構造のコンタクト層上にハードマスクをパターニングして、アクティブ領域を保護する工程と、
前記量子井戸構造のマスクされていない領域をエッチング除去する工程と、
エッチングされた領域に誘電材料を堆積する工程とを含む、請求項2に記載の方法。 - 前記量子井戸構造を有するメサを形成する工程が、前記量子井戸構造上に金属層を堆積する前に実行される、請求項2に記載の方法。
- 前記量子井戸構造を有するメサを形成する工程が、前記ゲート金属、前記ソースコンタクト、及び前記ドレインコンタクトが形成された後に実行される、請求項2に記載の方法。
- 前記量子井戸構造上に前記金属層を堆積する工程が、高融点金属を堆積する工程を含む、請求項1に記載の方法。
- 前記量子井戸構造上に前記金属層を堆積する工程が、チタンを堆積する工程を含む、請求項1に記載の方法。
- 前記金属層を貫通するゲートトレンチをエッチングする工程が、前記金属層をエッチングするための第1ドライエッチング、及び、前記量子井戸構造をエッチングするための第2ドライエッチングを含む、請求項1に記載の方法。
- 前記ソースコンタクト、前記ドレインコンタクト、及び前記ゲート電極のうちの少なくとも1つが、高融点金属を含む、請求項1に記載の方法。
- コンタクト層を有する量子井戸構造と、
前記コンタクト層上に堆積される金属層と、
ゲートトレンチであって、前記金属層を貫通して、当該ゲートトレンチの各側面に直接的に金属ソースコンタクト及び金属ドレインコンタクトを画定するとともに、底部及び側面を有する、ゲートトレンチと、
前記ゲートトレンチの前記側面に接して前記ゲートトレンチの前記底部にまで延びる誘電スペーサ材料と、
前記ゲートトレンチの前記底部に接するとともに、前記誘電スペーサ材料とは異なる材料であるゲート誘電層と、
前記ゲートトレンチ内で前記ゲート誘電層に接するゲート電極用のゲート金属であって、前記誘電スペーサ材料が、当該ゲート金属と、前記金属ソースコンタクト及び前記金属ドレインコンタクトとの間にあるとともに、前記誘電スペーサ材料が当該ゲート金属の底面より下にある底面を有する、ゲート金属とを備える、集積回路デバイス。 - 前記ソースコンタクト、前記ドレインコンタクト、及び前記ゲート電極のうちの少なくとも1つが、チタンを含む、請求項10に記載の集積回路デバイス。
- 前記量子井戸構造が、底部バリア層、量子井戸層、スペーサ層、ドーピング層、及び上部バリア層を更に含む、請求項10に記載の集積回路デバイス。
- 前記ゲートトレンチが、前記上部バリア層、前記ドーピング層、又は前記スペーサ層のうちの1つの中で止まる、請求項12に記載の集積回路デバイス。
- 前記ゲート電極と前記量子井戸構造との間のhigh-kゲート誘電層を更に備える、請求項12に記載の集積回路デバイス。
- 前記high-kゲート誘電層が、前記ゲート電極と、前記上部バリア層、前記ドーピング層、又は前記スペーサ層のうちの1つとの間に直接設けられる、請求項14に記載の集積回路デバイス。
- 前記ソースコンタクト、前記ドレインコンタクト、及び前記ゲート電極のうちの少なくとも1つが、高融点金属を含む、請求項10に記載の集積回路デバイス。
- 底部バリア層、量子井戸層、スペーサ層、ドーピング層、上部バリア層、及びコンタクト層を有する量子井戸構造と、
前記コンタクト層上に堆積される金属層と、
ゲートトレンチであって、前記金属層を貫通して、当該ゲートトレンチの各側面に直接的に金属ソースコンタクト及び金属ドレインコンタクトを画定するとともに、前記ドーピング層又は前記スペーサ層のうちの1つの中で止まり、前記スペーサ層が半導体から形成される、ゲートトレンチと、
前記ゲートトレンチの側面に接して前記ゲートトレンチの底部にまで延びるスペーサ材料と、
前記ゲートトレンチ内のゲート電極用のゲート金属であって、前記スペーサ材料が、当該ゲート金属と、前記金属ソースコンタクト及び前記金属ドレインコンタクトとの間にあるとともに、前記スペーサ材料が前記ゲート電極の底面より下にある底面を有する、ゲート金属と、
前記ゲート電極と前記量子井戸構造との間のhigh-kゲート誘電層とを備える、集積回路デバイス。 - 前記ソースコンタクト、前記ドレインコンタクト、及び前記ゲート電極のうちの少なくとも1つが、チタンを含む、請求項17に記載の集積回路デバイス。
- 前記high-kゲート誘電層が、前記ゲート電極と、前記上部バリア層、前記ドーピング層、又は前記スペーサ層のうちの1つとの間に直接設けられる、請求項17に記載の集積回路デバイス。
- 前記ソースコンタクト、前記ドレインコンタクト、及び前記ゲート電極のうちの少なくとも1つが、高融点金属を含む、請求項17に記載の集積回路デバイス。
- コンタクト層を有する量子井戸構造と、
前記コンタクト層上に堆積された金属層であって、エッチングされてソース金属層及びドレイン金属層を画定する金属層と、
前記ソース金属層と前記ドレイン金属層との間の前記量子井戸構造内に埋め込まれたゲート電極と、
前記ゲート電極と前記ソース金属層との間に形成され、前記ゲート電極の底部にまで延びる第1の誘電スペーサ層であって、前記ゲート電極が当該第1の誘電スペーサ層と物理的に接触し、当該第1の誘電スペーサ層が前記ソース金属層と物理的に接触し、前記ゲート電極と前記ソース金属層との間にあるとともに、当該第1の誘電スペーサ層が前記ゲート電極の底面より下にある底面を有する、第1の誘電スペーサ層と、
前記ゲート電極と前記ドレイン金属層との間に形成され、前記ゲート電極の前記底部にまで延びる第2の誘電スペーサ層であって、前記ゲート電極が当該第2の誘電スペーサ層と物理的に接触し、当該第2の誘電スペーサ層が前記ドレイン金属層と物理的に接触し、前記ゲート電極と前記ドレイン金属層との間にあるとともに、当該第2の誘電スペーサ層が前記ゲート電極の底面より下にある底面を有する、第2の誘電スペーサ層とを備え、
前記量子井戸構造が、底部バリア層、量子井戸層、スペーサ層、ドーピング層、及び上部バリア層を更に含み、
前記ゲート電極が、前記ドーピング層又は前記スペーサ層のうちの1つの中で止まり、前記スペーサ層が半導体から形成され、
当該集積回路デバイスが、
前記ゲート電極と前記量子井戸構造との間のhigh-kゲート誘電層であって、前記ゲート電極と、前記ドーピング層又は前記スペーサ層のうちの1つとの間に直接設けられるhigh-kゲート誘電層を更に備える、集積回路デバイス。 - 前記ソース金属層、前記ドレイン金属層、及び前記ゲート電極のうちの少なくとも1つが、高融点金属を含む、請求項21に記載の集積回路デバイス。
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CN102668089B (zh) | 2016-04-20 |
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EP3012868A1 (en) | 2016-04-27 |
TWI428991B (zh) | 2014-03-01 |
EP3012868B1 (en) | 2021-03-31 |
US10177249B2 (en) | 2019-01-08 |
CN102668089A (zh) | 2012-09-12 |
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