JP4908381B2 - Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ - Google Patents

Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ Download PDF

Info

Publication number
JP4908381B2
JP4908381B2 JP2007286690A JP2007286690A JP4908381B2 JP 4908381 B2 JP4908381 B2 JP 4908381B2 JP 2007286690 A JP2007286690 A JP 2007286690A JP 2007286690 A JP2007286690 A JP 2007286690A JP 4908381 B2 JP4908381 B2 JP 4908381B2
Authority
JP
Japan
Prior art keywords
layer
group iii
iii nitride
nitride semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007286690A
Other languages
English (en)
Japanese (ja)
Other versions
JP2009123717A (ja
JP2009123717A5 (enExample
Inventor
裕直 篠原
浩光 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP2007286690A priority Critical patent/JP4908381B2/ja
Priority to US12/515,157 priority patent/US8492186B2/en
Priority to KR1020097012041A priority patent/KR101071450B1/ko
Priority to PCT/JP2007/074411 priority patent/WO2008081717A1/ja
Priority to TW096148970A priority patent/TWI385822B/zh
Publication of JP2009123717A publication Critical patent/JP2009123717A/ja
Publication of JP2009123717A5 publication Critical patent/JP2009123717A5/ja
Application granted granted Critical
Publication of JP4908381B2 publication Critical patent/JP4908381B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2007286690A 2006-12-22 2007-11-02 Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ Active JP4908381B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007286690A JP4908381B2 (ja) 2006-12-22 2007-11-02 Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
US12/515,157 US8492186B2 (en) 2006-12-22 2007-12-19 Method for producing group III nitride semiconductor layer, group III nitride semiconductor light-emitting device, and lamp
KR1020097012041A KR101071450B1 (ko) 2006-12-22 2007-12-19 Ⅲ족 질화물 반도체층의 제조 방법 및 ⅲ족 질화물 반도체 발광 소자, 및 램프
PCT/JP2007/074411 WO2008081717A1 (ja) 2006-12-22 2007-12-19 Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
TW096148970A TWI385822B (zh) 2006-12-22 2007-12-20 Iii 族氮化物半導體層之製造方法，及iii 族氮化物半導體發光元件，以及燈

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2006346000 2006-12-22
JP2006346000 2006-12-22
JP2007224496 2007-08-30
JP2007224496 2007-08-30
JP2007274376 2007-10-22
JP2007274376 2007-10-22
JP2007286690A JP4908381B2 (ja) 2006-12-22 2007-11-02 Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2009027849A Division JP2009124174A (ja) 2006-12-22 2009-02-09 Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2010026910A Division JP2010103578A (ja) 2006-12-22 2010-02-09 Ｉｉｉ族窒化物半導体層の製造方法
JP2010162852A Division JP5246213B2 (ja) 2006-12-22 2010-07-20 Ｉｉｉ族窒化物半導体発光素子の製造方法

Publications (3)

Publication Number Publication Date
JP2009123717A JP2009123717A (ja) 2009-06-04
JP2009123717A5 JP2009123717A5 (enExample) 2010-05-27
JP4908381B2 true JP4908381B2 (ja) 2012-04-04

Family

ID=40815599

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2007286690A Active JP4908381B2 (ja) 2006-12-22 2007-11-02 Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2009027849A Pending JP2009124174A (ja) 2006-12-22 2009-02-09 Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2010026910A Pending JP2010103578A (ja) 2006-12-22 2010-02-09 Ｉｉｉ族窒化物半導体層の製造方法
JP2010162852A Active JP5246213B2 (ja) 2006-12-22 2010-07-20 Ｉｉｉ族窒化物半導体発光素子の製造方法

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2009027849A Pending JP2009124174A (ja) 2006-12-22 2009-02-09 Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2010026910A Pending JP2010103578A (ja) 2006-12-22 2010-02-09 Ｉｉｉ族窒化物半導体層の製造方法
JP2010162852A Active JP5246213B2 (ja) 2006-12-22 2010-07-20 Ｉｉｉ族窒化物半導体発光素子の製造方法

Country Status (3)

Country Link
US (1) US8492186B2 (enExample)
JP (4) JP4908381B2 (enExample)
TW (1) TWI385822B (enExample)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0752060A (ja) * 1993-08-13 1995-02-28 Matsushita Electric Works Ltd インパクトレンチ
JP5167974B2 (ja) * 2008-06-16 2013-03-21 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
WO2010032423A1 (ja) * 2008-09-16 2010-03-25 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法、ｉｉｉ族窒化物半導体発光素子並びにランプ
JP2010103424A (ja) * 2008-10-27 2010-05-06 Showa Denko Kk 半導体発光素子の製造方法
US7952106B2 (en) * 2009-04-10 2011-05-31 Everlight Electronics Co., Ltd. Light emitting diode device having uniform current distribution and method for forming the same
KR20140082852A (ko) * 2009-09-07 2014-07-02 엘시드 가부시끼가이샤 반도체 발광 소자
JP2011066073A (ja) * 2009-09-15 2011-03-31 Showa Denko Kk 半導体発光素子
JP5170051B2 (ja) * 2009-09-30 2013-03-27 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
US8476658B2 (en) * 2009-11-25 2013-07-02 Jing Jie Dai Semiconductor light-emitting devices
CN102612575A (zh) * 2009-11-26 2012-07-25 昭和电工株式会社 用于制造led用蓝宝石单晶基板的蓝宝石单晶、led用蓝宝石单晶基板、发光元件以及它们的制造方法
JP5509840B2 (ja) * 2009-12-22 2014-06-04 豊田合成株式会社 半導体発光素子の製造方法
JP4865047B2 (ja) 2010-02-24 2012-02-01 株式会社東芝 結晶成長方法
JP5533179B2 (ja) * 2010-04-16 2014-06-25 豊田合成株式会社 レチクル、パターン加工基板の製造方法、半導体積層基板の製造方法および半導体発光素子の製造方法
KR101047639B1 (ko) * 2010-04-19 2011-07-07 엘지이노텍 주식회사 반도체 발광소자, 발광 소자 패키지 및 반도체 발광 소자 제조방법
JP5789782B2 (ja) 2010-05-20 2015-10-07 パナソニックＩｐマネジメント株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
KR20120029767A (ko) * 2010-09-17 2012-03-27 엘지디스플레이 주식회사 반도체 발광소자 제조 방법
US8765509B2 (en) * 2010-09-30 2014-07-01 Toyoda Gosei Co., Ltd. Method for producing group III nitride semiconductor light-emitting device
JP5521981B2 (ja) 2010-11-08 2014-06-18 豊田合成株式会社 半導体発光素子の製造方法
KR101274651B1 (ko) * 2010-11-30 2013-06-12 엘지디스플레이 주식회사 발광 다이오드 및 이의 제조 방법
JP5492117B2 (ja) 2011-02-18 2014-05-14 株式会社東芝 窒化物半導体の積層構造およびその製造方法並びに窒化物半導体装置
JP5589942B2 (ja) 2011-04-15 2014-09-17 豊田合成株式会社 半導体発光チップの製造方法
JP5095842B2 (ja) 2011-05-24 2012-12-12 株式会社東芝 半導体発光素子、窒化物半導体層成長用基板及び窒化物半導体ウェーハ
JP5879225B2 (ja) * 2011-08-22 2016-03-08 住友化学株式会社 窒化物半導体テンプレート及び発光ダイオード
US8686433B2 (en) 2011-09-01 2014-04-01 Rohm Co., Ltd. Light emitting device and light emitting device package
KR20130035658A (ko) * 2011-09-30 2013-04-09 서울옵토디바이스주식회사 발광 다이오드 소자용 기판 제조 방법
JP2013086976A (ja) * 2011-10-13 2013-05-13 Tamura Seisakusho Co Ltd 結晶積層構造体の製造方法
JP5238867B2 (ja) * 2011-11-08 2013-07-17 株式会社東芝 半導体発光素子の製造方法
JP5135465B2 (ja) * 2011-11-29 2013-02-06 株式会社東芝 半導体発光素子及びその製造方法
JP5810907B2 (ja) * 2011-12-28 2015-11-11 日亜化学工業株式会社 基板の再生方法及び該再生方法を用いた窒化物半導体素子の製造方法
JP5633056B2 (ja) 2011-12-28 2014-12-03 豊田合成株式会社 半導体発光素子、発光装置
KR101233062B1 (ko) * 2012-04-18 2013-02-19 (주)휴넷플러스 나노 급 패턴이 형성된 고효율 질화물계 발광다이오드용 기판의 제조방법
CN102694086A (zh) * 2012-05-28 2012-09-26 华南理工大学 一种led芯片的图形化衬底及led芯片
JP5888133B2 (ja) 2012-06-08 2016-03-16 豊田合成株式会社 半導体発光素子、発光装置
TWI543398B (zh) * 2012-08-03 2016-07-21 國家中山科學研究院 Ｌｅｄ磊晶結構
JP2014038941A (ja) 2012-08-16 2014-02-27 Toyoda Gosei Co Ltd 半導体発光素子、発光装置
KR20140027836A (ko) * 2012-08-27 2014-03-07 엘지이노텍 주식회사 발광 소자
JP5440674B1 (ja) * 2012-09-18 2014-03-12 ウシオ電機株式会社 Ｌｅｄ素子及びその製造方法
JP5978893B2 (ja) * 2012-09-27 2016-08-24 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
JP5838943B2 (ja) * 2012-09-27 2016-01-06 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法
US9214336B2 (en) 2012-09-27 2015-12-15 Toyoda Gosei Co., Ltd. Method for producing a group III nitride semiconductor
JP5880383B2 (ja) 2012-10-11 2016-03-09 豊田合成株式会社 半導体発光素子、発光装置
KR101982626B1 (ko) 2012-10-17 2019-05-27 엘지이노텍 주식회사 발광 소자 및 이를 구비한 조명 장치
JP5458162B2 (ja) * 2012-11-07 2014-04-02 株式会社東芝 半導体発光素子
JP6048233B2 (ja) * 2013-03-12 2016-12-21 豊田合成株式会社 Ｉｉｉ 族窒化物半導体発光素子
CN105190842B (zh) 2013-03-14 2017-07-28 佳能安内华股份有限公司 成膜方法、半导体发光元件的制造方法、半导体发光元件和照明装置
WO2015118419A1 (en) * 2014-02-06 2015-08-13 Koninklijke Philips N.V. Light emitting diode with structured substrate
JP6248786B2 (ja) * 2014-04-25 2017-12-20 日亜化学工業株式会社 窒化物半導体素子およびその製造方法
JP2016072388A (ja) * 2014-09-29 2016-05-09 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
JP6375890B2 (ja) 2014-11-18 2018-08-22 日亜化学工業株式会社 窒化物半導体素子及びその製造方法
JP5864000B2 (ja) * 2015-01-29 2016-02-17 株式会社東芝 半導体発光素子、窒化物半導体層成長用基板及び窒化物半導体ウェーハ
KR101638738B1 (ko) * 2015-04-23 2016-07-11 영남대학교 산학협력단 질화갈륨계 발광다이오드용 패터닝 기판 및 이를 이용한 발광다이오드
US9899569B2 (en) 2015-04-23 2018-02-20 Research Cooperation Foundation Of Yeungnam University Patterned substrate for gallium nitride-based light emitting diode and the light emitting diode using the same
JP2017050439A (ja) * 2015-09-03 2017-03-09 豊田合成株式会社 紫外発光素子およびその製造方法
US10600825B2 (en) * 2018-05-21 2020-03-24 Shenzhen China Star Optoelectronics Technology Co., Ltd. Manufacturing method for TFT array substrate and TFT array substrate
JP6683237B2 (ja) * 2018-11-28 2020-04-15 日亜化学工業株式会社 窒化物半導体素子
JP6902569B2 (ja) 2019-04-17 2021-07-14 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
JP6811293B1 (ja) 2019-08-21 2021-01-13 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
CN113838955B (zh) * 2020-06-24 2025-11-18 保定中创燕园半导体科技有限公司 一种基于氮化铝陶瓷材料的复合衬底及其制备方法和应用
JP7616600B2 (ja) * 2021-03-04 2025-01-17 豊田合成株式会社 半導体発光素子
JP2022163949A (ja) * 2021-04-15 2022-10-27 株式会社ジャパンディスプレイ 電子部品のウエハ
JP2025098661A (ja) * 2023-12-20 2025-07-02 スタンレー電気株式会社 紫外半導体発光素子及びその製造方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173829A (ja) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の成長方法
JPH04350156A (ja) 1991-05-27 1992-12-04 Ishikawajima Harima Heavy Ind Co Ltd 薄膜形成装置
JPH05166794A (ja) 1991-12-11 1993-07-02 Brother Ind Ltd スパッタ成膜時基板前処理法
JPH06177039A (ja) 1992-12-07 1994-06-24 Canon Inc エピタキシャル膜の形成方法
JP2836687B2 (ja) 1993-04-03 1998-12-14 日亜化学工業株式会社 窒化ガリウム系化合物半導体発光素子
US5627105A (en) 1993-04-08 1997-05-06 Varian Associates, Inc. Plasma etch process and TiSix layers made using the process
JPH07276706A (ja) * 1994-03-04 1995-10-24 Xerox Corp ディジタルプリンタ及びｌｅｄプリントバーにおけるｌｅｄ画素非均一性補正方法
JP3691934B2 (ja) * 1996-06-17 2005-09-07 株式会社東芝 窒化ガリウム系化合物半導体発光デバイス及びその製造方法
JP4264992B2 (ja) * 1997-05-28 2009-05-20 ソニー株式会社 半導体装置の製造方法
JP3436128B2 (ja) 1998-04-28 2003-08-11 日亜化学工業株式会社 窒化物半導体の成長方法及び窒化物半導体素子
JP3700492B2 (ja) 1999-09-21 2005-09-28 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
US6367949B1 (en) * 1999-08-04 2002-04-09 911 Emergency Products, Inc. Par 36 LED utility lamp
JP3994623B2 (ja) 2000-04-21 2007-10-24 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
US6841808B2 (en) * 2000-06-23 2005-01-11 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method for producing the same
JP3595277B2 (ja) 2001-03-21 2004-12-02 三菱電線工業株式会社 ＧａＮ系半導体発光ダイオード
CN1284250C (zh) * 2001-03-21 2006-11-08 三菱电线工业株式会社 半导体发光元件
JP2002302764A (ja) 2001-04-04 2002-10-18 Anelva Corp スパッタリング装置
JP2002368344A (ja) 2001-06-06 2002-12-20 Matsushita Electric Ind Co Ltd 窒化物半導体素子の製造方法
JP4023121B2 (ja) * 2001-09-06 2007-12-19 豊田合成株式会社 ｎ型電極、ＩＩＩ族窒化物系化合物半導体素子、ｎ型電極の製造方法、及びＩＩＩ族窒化物系化合物半導体素子の製造方法
JP2003197961A (ja) * 2001-12-27 2003-07-11 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP4137611B2 (ja) 2002-11-26 2008-08-20 新明和工業株式会社 積層膜の形成方法
JP2005064492A (ja) 2003-07-28 2005-03-10 Kyocera Corp 単結晶サファイア基板とその製造方法及び半導体発光素子
WO2005018008A1 (ja) * 2003-08-19 2005-02-24 Nichia Corporation 半導体素子
KR100714639B1 (ko) 2003-10-21 2007-05-07 삼성전기주식회사 발광 소자
JP2005136106A (ja) 2003-10-29 2005-05-26 Kyocera Corp 単結晶サファイア基板とその製造方法及び半導体発光素子
JP2005150675A (ja) * 2003-11-18 2005-06-09 Itswell Co Ltd 半導体発光ダイオードとその製造方法
US20050179160A1 (en) * 2004-02-12 2005-08-18 Jeff Moreau Method for increasing the surface friction of sheet piling segments
KR100568297B1 (ko) * 2004-03-30 2006-04-05 삼성전기주식회사 질화물 반도체 발광 소자 및 그 제조 방법
US7560294B2 (en) * 2004-06-07 2009-07-14 Toyoda Gosei Co., Ltd. Light emitting element and method of making same
JP2006060164A (ja) 2004-08-24 2006-03-02 National Institute Of Advanced Industrial & Technology 窒化物半導体デバイスおよび窒化物半導体結晶成長方法
JP4450202B2 (ja) 2004-10-21 2010-04-14 豊田合成株式会社 半導体の製造方法
JP4626306B2 (ja) * 2005-01-11 2011-02-09 三菱化学株式会社 窒化物半導体発光素子およびその製造方法
JP4189386B2 (ja) 2005-01-27 2008-12-03 ローム株式会社 窒化物半導体結晶層の成長方法および窒化物半導体発光素子の製法
JP2006313944A (ja) * 2006-08-25 2006-11-16 Mitsubishi Cable Ind Ltd 紫外線発光素子

Also Published As

Publication number Publication date
JP2010103578A (ja) 2010-05-06
US8492186B2 (en) 2013-07-23
JP5246213B2 (ja) 2013-07-24
US20100025684A1 (en) 2010-02-04
JP2010263236A (ja) 2010-11-18
JP2009124174A (ja) 2009-06-04
JP2009123717A (ja) 2009-06-04
TWI385822B (zh) 2013-02-11
TW200840096A (en) 2008-10-01

Similar Documents

Publication Publication Date Title
JP4908381B2 (ja) Ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP5521981B2 (ja) 半導体発光素子の製造方法
JP5556657B2 (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JPWO2009154215A1 (ja) Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
KR101067122B1 (ko) Ⅲ족 질화물 반도체의 제조 방법, ⅲ족 질화물 반도체 발광 소자의 제조 방법 및 ⅲ족 질화물 반도체 발광 소자, 및 램프
KR101071450B1 (ko) Ⅲ족 질화물 반도체층의 제조 방법 및 ⅲ족 질화물 반도체 발광 소자, 및 램프
JPWO2010032423A1 (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法、ｉｉｉ族窒化物半導体発光素子並びにランプ、ｉｉｉ族窒化物半導体発光素子ウエーハの発光波長分布のばらつき低減方法
CN101689586A (zh) 氮化物半导体发光元件和氮化物半导体的制造方法
JP2009277882A (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ
WO2013005789A1 (ja) 窒化物半導体発光素子の製造方法、ウェハ、窒化物半導体発光素子
JP2009283620A (ja) Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
JP2005268581A (ja) 窒化ガリウム系化合物半導体発光素子
JP2008124254A (ja) 窒化ガリウム系化合物半導体発光素子
JP2007103774A (ja) Ｉｉｉ族窒化物半導体積層構造体およびその製造方法
JP2006190710A (ja) 窒化物半導体発光素子およびその製造方法
JP2008034444A (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法、ｉｉｉ族窒化物半導体発光素子及びランプ
JP2007329312A (ja) Ｉｉｉ族窒化物半導体積層構造体の製造方法
JP2010010444A (ja) 半導体発光素子、ランプ及び半導体発光素子の製造方法
JP2011082248A (ja) 半導体発光素子及びその製造方法、並びにランプ
JP2005277401A (ja) 窒化ガリウム系化合物半導体積層物およびその製造方法
JP2009176920A (ja) ＡｌＧａＩｎＰ系半導体発光素子用エピタキシャルウェハ及びその成長方法
JP2011091442A (ja) 窒化ガリウム系化合物半導体発光ダイオード
JP2006019713A (ja) Ｉｉｉ族窒化物半導体発光素子およびそれを用いたｌｅｄ
JP2009224666A (ja) Ｉｉｉ族窒化物半導体発光素子、ｉｉｉ族窒化物半導体発光素子の製造方法、及びランプ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100412

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20100412

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20100510

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100518

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100720

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20101019

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110113

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20110118

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20110415

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120112

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150120

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Ref document number: 4908381

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150120

Year of fee payment: 3

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150120

Year of fee payment: 3

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350