TW201130156A - Sapphire single crystal for producing sapphire single crystal substrate for LED, sapphire single crystal substrate for LED, light-eliciting element, and method for preparing the same - Google Patents

Sapphire single crystal for producing sapphire single crystal substrate for LED, sapphire single crystal substrate for LED, light-eliciting element, and method for preparing the same

Info

Publication number
TW201130156A
TW201130156A TW099140694A TW99140694A TW201130156A TW 201130156 A TW201130156 A TW 201130156A TW 099140694 A TW099140694 A TW 099140694A TW 99140694 A TW99140694 A TW 99140694A TW 201130156 A TW201130156 A TW 201130156A
Authority
TW
Taiwan
Prior art keywords
single crystal
sapphire single
led
crystal substrate
preparing
Prior art date
Application number
TW099140694A
Other languages
Chinese (zh)
Inventor
Katsuki Kusunoki
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW201130156A publication Critical patent/TW201130156A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Led Devices (AREA)

Abstract

The present invention is related to a sapphire single crystal for sapphire single crystal substrate for LED wherein the content of impurities of Ti is optimized, sapphire single crystal substrate for LED, light-eliciting element, and method for preparing the same. Using aluminum oxide containing large amount of Ti as raw materials, it is melted in crucible in atmosphere of inert gas, seed crystal formed from sapphire single crystal is contacted with the obtained melted fluid, then it is rotated and pulled up at the same time to produce sapphire single crystal ingot. After cooling, sapphire single crystal substrate is cut, sapphire single crystal substrate for LED with decrease of deflection and foam defects can be obtained by the means of the amount of Ti of sapphire single crystal substrate being as more than 12 ppm, less than 100 ppm.
TW099140694A 2009-11-26 2010-11-25 Sapphire single crystal for producing sapphire single crystal substrate for LED, sapphire single crystal substrate for LED, light-eliciting element, and method for preparing the same TW201130156A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009269154 2009-11-26

Publications (1)

Publication Number Publication Date
TW201130156A true TW201130156A (en) 2011-09-01

Family

ID=44066508

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099140694A TW201130156A (en) 2009-11-26 2010-11-25 Sapphire single crystal for producing sapphire single crystal substrate for LED, sapphire single crystal substrate for LED, light-eliciting element, and method for preparing the same

Country Status (4)

Country Link
KR (1) KR20120088756A (en)
CN (1) CN102612575A (en)
TW (1) TW201130156A (en)
WO (1) WO2011065403A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013098298A (en) * 2011-10-31 2013-05-20 Toyoda Gosei Co Ltd Group iii nitride semiconductor light-emitting element manufacturing method
JP2013245149A (en) * 2012-05-28 2013-12-09 Sumitomo Chemical Co Ltd Raw material alumina for producing sapphire single crystal and method for producing the sapphire single crystal
JP2014162673A (en) * 2013-02-25 2014-09-08 Tokuyama Corp Sapphire single crystal core and manufacturing method of the same
WO2016153070A1 (en) * 2015-03-26 2016-09-29 京セラ株式会社 Sapphire member and method for manufacturing sapphire member
EP3438332B1 (en) 2016-03-30 2023-08-30 Nikon Corporation Optical component comprising aluminum oxide
CN106764483B (en) * 2016-11-30 2018-06-12 深圳市耀铭豪智能科技有限公司 A kind of preparation method of LED light device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59152289A (en) * 1983-02-16 1984-08-30 Seiko Epson Corp Production of star blue sapphire
JPH0818908B2 (en) * 1986-10-27 1996-02-28 住友化学工業株式会社 Raw material for Bernoulli method single crystal Alumina powder
CN1333467C (en) * 2000-09-13 2007-08-22 晶元光电股份有限公司 White LED
TWI271877B (en) * 2002-06-04 2007-01-21 Nitride Semiconductors Co Ltd Gallium nitride compound semiconductor device and manufacturing method
JP2004123467A (en) * 2002-10-03 2004-04-22 Shinkosha:Kk Sapphire single crystal, and raw material for sapphire single crystal
JP2005085888A (en) * 2003-09-05 2005-03-31 Kyocera Corp SINGLE CRYSTAL SAPPHIRE SUBSTRATE FOR SEMICONDUCTOR ELEMENT, ITS MANUFACTURING METHOD AND GaN SYSTEM SEMICONDUCTOR LIGHT EMITTING ELEMENT AS WELL AS GaN SYSTEM SEMICONDUCTOR WHITE LIGHT EMITTING ELEMENT EMPLOYING THE SUBSTRATE
JP4908381B2 (en) * 2006-12-22 2012-04-04 昭和電工株式会社 Group III nitride semiconductor layer manufacturing method, group III nitride semiconductor light emitting device, and lamp
JP4844429B2 (en) * 2007-02-26 2011-12-28 日立化成工業株式会社 Method for producing sapphire single crystal

Also Published As

Publication number Publication date
WO2011065403A1 (en) 2011-06-03
CN102612575A (en) 2012-07-25
KR20120088756A (en) 2012-08-08

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