JP4708357B2 - 耐フレッチング性及び耐ウィスカー性の被覆装置 - Google Patents
耐フレッチング性及び耐ウィスカー性の被覆装置 Download PDFInfo
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- JP4708357B2 JP4708357B2 JP2006535451A JP2006535451A JP4708357B2 JP 4708357 B2 JP4708357 B2 JP 4708357B2 JP 2006535451 A JP2006535451 A JP 2006535451A JP 2006535451 A JP2006535451 A JP 2006535451A JP 4708357 B2 JP4708357 B2 JP 4708357B2
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- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
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- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12896—Ag-base component
Description
図1に関し、複数の導線10を有するリードフレームが、銅又は銅基合金のような電気伝導性金属から形成されている。複数の導線10の各々は、内部導線端部12の所で終わり、中心孔を定めており、その孔はダイパドル(die paddle)14により占められている。典型的には、内部導線端部12及びダイパドル14は、チップの取付け及び配線結合を向上させるため、銀のような貴金属の薄い層で被覆されている。銀の場合、この薄い層は、3μ〜6μの典型的な厚さを有し、電着により堆積されている。次に、一般に半導体チップと呼ばれる一つ以上の集積回路(IC)装置16を、低温金属はんだ、又は熱伝導性重合体接着剤を使用するなどして、ダイパドル14に取付ける。細い金属線18、又は伝導性箔の細い帯により、集積回路装置16の電気活性面上の回路を、内部導線端部12に電気的に相互接続する。次に、ダイパドル14、集積回路装置16、内部導線端部12、及び導線中間部分21を、破線20により指定した周囲に沿って全体的に成形樹脂によりカプセル化する。
51mm×12.7mm×0.25mm(2インチ×0.5インチ×0.010インチ)の大きさの試料片を、銅合金C194の帯から切り出した。銅合金C194は、重量で2.1%〜2.6%の鉄、0.05%〜0.20%の亜鉛、0.015%〜0.15%の燐、及び残余の銅の組成を有する。その試料片を市販のアルカリ性クリーナー中で50℃で、139A/dm(15Asf)のカソード電流密度を用いて1分間クリーニングした。
152mm×31.8mm×0.13mm(6インチ×1.25インチ×0.005インチ)の大きさを有する試料片を、表3に記載したように、銅合金C194及びC7025、鍛造一体的(monolithic)錫、及び鍛造一体的銀から形成した。C7025は、重量で、2.2%〜4.2%のニッケル、0.25%〜1.2%の珪素、0.05%〜0.3%のMg、及び残余の銅の組成を有する。
152mm×31.8mm×0.13mm(6インチ×1.25インチ×0.005インチ)の大きさを有する銅合金C194試料片を、前の例の場合と同様に、介在層及び艶消し錫で被覆した。試料を空気中で350℃に加熱し、水中で急冷することにより、リフローした錫表面を得た。
表5〜8は、図9A〜9Dに例示した構造体の測定組成が、本発明に従って被覆された基体の最外表面上に銀に富む相が形成されたことを実証していることを報告するものである。150℃に一週間加熱する前の厚さ(マイクロインチ)は、XRF(蛍光X線)により測定した。加熱後の組成及び原子%は、EDX(エネルギー分散X線)により決定した。
Claims (10)
- 1mm以下の距離(24)に分離された複数の構造体(10)であって、複数の層で被覆された電気伝導性材料から作られている前記複数の構造体(10)を含んでなる電気伝導性部品であって、前記電気伝導性材料が、電気伝導性基体(26)、前記電気伝導性基体(26)上に少なくとも一つの表面を形成するように前記電気伝導性基体(26)上に堆積されている障壁層(32)であって、他層に前記電気伝導性基体(26)の成分が拡散するのを防ぐのに有効な前記障壁層(32)、前記電気伝導性基体(26)上に前記少なくとも一つの表面を形成している前記障壁層(32)上に堆積される銅又は銅基合金層(34)、前記銅又は銅基合金層(34)を被覆する銀又は銀基合金層(28)、及び前記銀又は銀基合金層(28)を直接被覆する微細粒子錫又は錫基合金層(30)とを含む、前記電気伝導性部品。
- 前記複数の構造体(10)が複数の導線を構成し、前記複数の導線の各々の一部分(23)だけが前記銀又は銀基合金層(28)及び前記微細粒子錫又は錫基合金層(30)で被覆されている、請求項1に記載の電気伝導性部品。
- 前記銀又は銀基合金層(28)が、0.051μm〜1.02μm(2マイクロインチ〜40マイクロインチ)の厚さを有する、請求項2に記載の電気伝導性部品。
- 前記錫又は錫基合金層(30)が、0.51μm〜3.8μm(20マイクロインチ〜150マイクロインチ)の厚さを有する、請求項3に記載の電気伝導性部品。
- 前記錫基合金(30)が鉛を含まない、請求項4に記載の電気伝導性部品。
- 前記錫又は錫基合金(30)が、0.1μm〜100μmの平均粒径を有する、請求項5に記載の電気伝導性部品。
- 前記障壁層(32)が、ニッケル、コバルト、鉄、マンガン、クロム、モリブデン、及びそれらの合金からなる群から選択されている、請求項1に記載の電気伝導性部品。
- 前記障壁層(32)が、ニッケル又はニッケル基合金である、請求項7に記載の電気伝導性部品。
- 前記ニッケル又はニッケル基合金障壁層(32)が、0.102μm〜0.51μm(4マイクロインチ〜20マイクロインチ)の厚さを有する、請求項8に記載の電気伝導性部品。
- 前記銅又は銅基合金層(34)は、0.051μm〜1.52μm(2マイクロインチ〜60マイクロインチ)の厚さを有する犠牲層(34)を形成し、そして錫と金属間化合物を形成するのに有効である、請求項1に記載の電気伝導性部品。
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US51124903P | 2003-10-14 | 2003-10-14 | |
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JP2010143456A Pending JP2010232681A (ja) | 2003-10-14 | 2010-06-24 | 耐フレッチング性及び耐ウィスカー性の被覆装置及び方法 |
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Also Published As
Publication number | Publication date |
---|---|
KR20130128477A (ko) | 2013-11-26 |
CN101540303A (zh) | 2009-09-23 |
TWI258826B (en) | 2006-07-21 |
CN100594604C (zh) | 2010-03-17 |
KR101351284B1 (ko) | 2014-01-14 |
US7391116B2 (en) | 2008-06-24 |
JP6050737B2 (ja) | 2016-12-21 |
US7808109B2 (en) | 2010-10-05 |
KR20070028292A (ko) | 2007-03-12 |
JP2014040675A (ja) | 2014-03-06 |
JP5965359B2 (ja) | 2016-08-03 |
JP2014042002A (ja) | 2014-03-06 |
US20090017327A1 (en) | 2009-01-15 |
WO2005038989A3 (en) | 2007-11-22 |
MY144068A (en) | 2011-08-15 |
US20050106408A1 (en) | 2005-05-19 |
JP2007520053A (ja) | 2007-07-19 |
CN101540303B (zh) | 2012-04-25 |
HK1118950A1 (en) | 2009-02-20 |
CN101142674A (zh) | 2008-03-12 |
TW200536031A (en) | 2005-11-01 |
JP2010232681A (ja) | 2010-10-14 |
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