CN101142674A - 抗磨损和晶须的涂覆系统和方法 - Google Patents
抗磨损和晶须的涂覆系统和方法 Download PDFInfo
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- CN101142674A CN101142674A CNA2004800336106A CN200480033610A CN101142674A CN 101142674 A CN101142674 A CN 101142674A CN A2004800336106 A CNA2004800336106 A CN A2004800336106A CN 200480033610 A CN200480033610 A CN 200480033610A CN 101142674 A CN101142674 A CN 101142674A
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- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
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Abstract
Description
基底金属 | 氧化物 | 室温电阻率(欧姆·米) | 适用性 | |
电阻率可接受 | 铬 | CdO | 3.90E-05 | X-有毒 |
铟 | In2O3 | 1.00E-03 | 0 | |
铁 | Fe3O4 | 1.00E-04 | O | |
铌 | Nb2O3 | 8.60E-04 | O | |
铼 | ReO3 | 2.00E-05 | O | |
钌 | Ru2O | 3.52E-07 | O | |
银 | AgO | 0.14 | O | |
铀 | UO2 | 3.80E-02 | X-有毒 | |
钒 | V2O3 | 5.50E-05 | O | |
锌 | ZnO | 1.50E-02 | O | |
电阻率不可接受 | 铋 | Bi2O3 | 1.00E+07 | |
钴 | CoO | 1.00E+06 | ||
铜 | Cu2O | 2.00E+05 | ||
铕 | EuO | 1.00E+06 | ||
锰 | MnO | 1.00E+06 | ||
镍 | NiO | 1.00E+11 | ||
硅 | SiO2 | 1.00E+12 | ||
钠 | Na2O2 | 2.50E+02 | ||
钽 | Ta2O5 | 1.00E+03 |
样品 | 锡精整 | 中介层厚度微米数(微英寸数) | 锡厚度(微英寸) | 每平方毫米的晶须数和晶须的最长微米数 | |||||||||
镍 | 铜 | 银 | 10天 | 60天 | 120天 | 180天 | |||||||
# | 微米 | # | 微米 | # | 微米 | # | 微米 | ||||||
1 | 糙面 | 0 | (20-40)0.51-1.02 | 0 | (250-500)6.4-12.7 | 25 | 19 | 58 | 28 | 138 | 36 | 295 | 53 |
2 | 糙面 | 0 | (20-40)0.51-1.02 | 0 | (75-130)1.9-3.3 | 33 | 28 | 298 | 175 | 310 | 87 | 496 | 169 |
3 | 糙面 | 0 | (20-40)0.51-1.02 | (5-10)0.13-0.25 | (75-130)1.9-3.3 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
4 | 糙面 | 0 | (20-40)0.51-1.02 | 0 | (40-80)1.02-2.03 | 108 | 36 | 389 | 45 | 361 | 130 | 512 | 45 |
5 | 糙面 | 0 | (20-40)0.51-1.02 | (5-10)0.13-0.25 | (40-80)1.02-2.03 | 0 | 0 | 0 | 0 | 0 | 0 | 5 | 5 |
17 | 糙面 | (5-20)0.13-0.51 | 0 | (5-10)0.13-0.25 | (40-80)1.02-2.03 | 0 | 0 | 0 | 0 | 0 | 0 | 2 | 4 |
19 | 糙面 | (5-20)0.13-0.51 | (7-18)0.18-0.46 | (5-10)0.13-0.25 | (40-80)1.02-2.03 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
20 | 光亮 | 0 | (20-40)0.51-1.02 | 0 | (40-80)1.02-2.03 | 8 | 7 | 33 | 7 | 30 | 9 | 231 | 28 |
21 | 光亮 | 0 | (20-40)0.51-1.00 | (5-10)0.13-0.25 | (40-80)1.02-2.03 | 0 | 0 | 0 | 0 | 0 | 0 | 0 | 0 |
样品 | 衬底 | 中介层 | 表面层 | 表面层厚度(微英寸) | 10毫欧接触电阻对应的圈数 | 10欧姆接触电阻对应的圈数 |
1 | C194 | 镍/铜 | 糙面锡 | 0.51微米(20) | 61 | 3269 |
2 | C194 | 镍/铜/0.13微米(5微英寸)银 | 糙面锡 | 0.51微米(20) | 79 | 4400 |
3 | C194 | 无 | 糙面锡 | 1.02微米(40) | 116 | 2269 |
4 | C194 | 0.13微米(5微英寸)银 | 糙面锡 | 1.07微米(42) | 490 | >5000* |
5 | 熟锡 | 无 | 无 | N/A | 253 | 6530 |
6 | 熟锡 | 无 | 无 | N/A | >20000 | >20000 |
样品 | 中介层厚度微米(微英寸) | 锡类型 | 锡厚度微米微英寸 | R/N0-60毫米 | ||
铜 | 银 | 100克 | 250克 | |||
1 | 0.51-1.02(20-40) | 0 | 糙面 | 1.02-2.03(40-80) | 0.55 | 0.55 |
2 | 0.51-1.02(20-40) | 0.051-0.13(2-5) | 糙面 | 1.02-2.03(40-80) | 0.58 | 0.53 |
3 | 0.51-1.02(20-40) | 0.13-0.25(5-10) | 糙面 | 1.02-2.03(40-80) | 0.48 | 0.45 |
4 | 0.51-1.02(20-40) | 0.25-0.51(10-20) | 糙面 | 1.02-2.03(40-80) | 0.47 | 0.46 |
5 | 0 | 0 | 回流 | 1.02(40) | 0.48 | 0.47 |
6 | 0 | 0.13(5) | 回流 | 1.02(40) | 0.30 | 0.22 |
图9A中的参考标号 | 组分 | 厚度微米(微英寸) | 图9A中的参考标号 | 组分 | 原子百分比 | |
26 | C194 | N.A. | 26 | C194 | N.A. | |
34 | 铜 | 0.51-1.02(20-40) | 82 | 铜锡 | 75%25% | |
36 | 锡 | 1.02-2.03(40-80) | 86 | 铜锡 | 56%44% |
图9B中的参考标号 | 组分 | 厚度微米(微英寸) | 图9B中的参考标号 | 组分 | 原子百分比 | |
26 | C194 | N.A. | 26 | C194 | N.A. | |
34 | 铜 | 0.51-1.02(20-40) | 88 | 铜锡 | 79%21% | |
28 | 银 | 0.13-0.25(5-10) | 90 | 铜锡银 | 74%23%3% | |
36 | 锡 | 1.02-2.03(40-80) | 92 | 银锡铜 | 56%25%19% |
图9C中的参考标号 | 组分 | 厚度微米(微英寸) | 图9C中的参考标号 | 组分 | 原子百分比 | |
26 | C194 | N.A. | 26 | C194 | N.A. | |
32 | 镍 | 0.13-0.51(5-20) | 96 | 铜镍锡 | 42%32%26% | |
34 | 铜 | 0.18-0.46(7-18) | 98 | 铜锡镍银 | 50%41%7%2% | |
28 | 银 | 0.13-0.25(5-10) | 94 | 锡铜银 | 77%17%6% | |
36 | 锡 | 1.02-2.03(40-80) | 92 | 银锡铜 | 56%31%13% |
图9D中的参考标号 | 组分 | 厚度微米(微英寸) | 图9D中的参考标号 | 组分 | 原子百分比 | |
26 | C194 | N.A. | 26 | C194 | N.A. | |
32 | 镍 | 0.13-0.51(5-20) | 100 | 锡镍铜银 | 41%34%24%1% | |
28 | 银 | 0.13-0.25(5-10) | 102 | 锡银铜镍 | 35%27%23%15% | |
36 | 锡 | 1.02-2.03(40-80) | 92 | 银锡铜 | 64%26%10% |
Claims (55)
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CN110512244A (zh) * | 2019-09-19 | 2019-11-29 | 昆山一鼎工业科技有限公司 | 电镀雾锡产品的表面处理方法 |
CN110512244B (zh) * | 2019-09-19 | 2021-03-09 | 昆山一鼎工业科技有限公司 | 电镀雾锡产品的表面处理方法 |
CN111575656A (zh) * | 2020-04-27 | 2020-08-25 | 深圳市科瀚电子有限公司 | 一种音叉振荡器的镀膜方法及镀膜音叉振荡器 |
CN114758838A (zh) * | 2021-01-11 | 2022-07-15 | 上海乔辉新材料科技有限公司 | 镀银导线的制作方法 |
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Publication number | Publication date |
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JP2010232681A (ja) | 2010-10-14 |
US20050106408A1 (en) | 2005-05-19 |
JP6050737B2 (ja) | 2016-12-21 |
JP2007520053A (ja) | 2007-07-19 |
HK1118950A1 (en) | 2009-02-20 |
JP5965359B2 (ja) | 2016-08-03 |
JP2014042002A (ja) | 2014-03-06 |
TW200536031A (en) | 2005-11-01 |
CN101540303B (zh) | 2012-04-25 |
MY144068A (en) | 2011-08-15 |
KR20130128477A (ko) | 2013-11-26 |
CN100594604C (zh) | 2010-03-17 |
JP4708357B2 (ja) | 2011-06-22 |
US7808109B2 (en) | 2010-10-05 |
US20090017327A1 (en) | 2009-01-15 |
WO2005038989A2 (en) | 2005-04-28 |
TWI258826B (en) | 2006-07-21 |
KR20070028292A (ko) | 2007-03-12 |
KR101351284B1 (ko) | 2014-01-14 |
CN101540303A (zh) | 2009-09-23 |
US7391116B2 (en) | 2008-06-24 |
WO2005038989A3 (en) | 2007-11-22 |
JP2014040675A (ja) | 2014-03-06 |
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