KR101092616B1 - 전자 부품용 금속 프레임 - Google Patents
전자 부품용 금속 프레임 Download PDFInfo
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- KR101092616B1 KR101092616B1 KR1020080039904A KR20080039904A KR101092616B1 KR 101092616 B1 KR101092616 B1 KR 101092616B1 KR 1020080039904 A KR1020080039904 A KR 1020080039904A KR 20080039904 A KR20080039904 A KR 20080039904A KR 101092616 B1 KR101092616 B1 KR 101092616B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48464—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
- Die Bonding (AREA)
Abstract
Description
Claims (15)
- 전자 소자와 전기적으로 연결되는 리드부를 포함하고,상기 리드부는 제1금속층을 포함하되, 상기 제1금속층은 구리(Cu)를 주된 성분으로 포함하고, 붕소(B) 또는 베릴륨(Be)을 더 포함하는 합금으로 구비된 것을 특징으로 하는 전자 부품용 금속 프레임.
- 제1항에 있어서, 상기 합금은, 상기 붕소(B) 또는 베릴륨(Be)이, 0.005 중량% 내지 0.5 중량% 포함되고, 나머지는 상기 구리(Cu) 및 불가피한 불순물로 구비된 전자 부품용 금속 프레임.
- 제1항에 있어서, 상기 합금은 철(Fe)을 더 포함하는 전자 부품용 금속 프레임.
- 제3항에 있어서, 상기 철은 0.1 중량% 내지 6 중량% 포함된 전자 부품용 금속 프레임.
- 제1항에 있어서, 상기 합금은 인(P)을 더 포함하는 전자 부품용 금속 프레임.
- 제5항에 있어서, 상기 인(P)은 0.006 중량% 내지 0.2 중량% 포함된 전자 부품용 금속 프레임.
- 제1항 내지 제6항 중 어느 한 항에 있어서,상기 제1금속층은 적어도 상기 리드부와 일체로 구비된 전자 부품용 금속 프레임.
- 제1항 내지 제6항 중 어느 한 항에 있어서,상기 전자 소자가 안착되는 장착부를 더 포함하고, 상기 장착부는 상기 리드부와 동일 재료로 구비된 전자 부품용 금속 프레임.
- 전자 소자와 전기적으로 연결되는 리드부를 포함하고,상기 리드부는 제1금속층과 상기 제1금속층의 외면 중 적어도 외부회로와 전기적으로 연결되는 면에 구비된 도금층인 제2금속층을 포함하며,상기 제1금속층은 구리(Cu)를 주된 성분으로 포함하고, 붕소(B) 또는 베릴륨(Be)을 더 포함하는 합금으로 구비되고,상기 제2금속층은 주석을 주된 성분으로 하는 전자 부품용 금속 프레임.
- 제9항에 있어서,상기 제2금속층은 순수 주석으로 이루어진 전자 부품용 금속 프레임.
- 제9항 또는 제10항에 있어서, 상기 합금은 상기 붕소(B) 또는 베릴륨(Be)이, 0.005 중량% 내지 0.5 중량% 포함되고, 나머지는 상기 구리(Cu) 및 불가피한 불순물로 구비된 전자 부품용 금속 프레임.
- 제9항 또는 제10항에 있어서, 상기 합금은 철(Fe)을 더 포함하는 전자 부품용 금속 프레임.
- 제12항에 있어서, 상기 철은 0.1 중량% 내지 6 중량% 포함된 전자 부품용 금속 프레임.
- 제9항 또는 제10항에 있어서, 상기 합금은 인(P)을 더 포함하는 전자 부품용 금속 프레임.
- 제14항에 있어서, 상기 인(P)은 0.006 중량% 내지 0.2 중량% 포함된 전자 부품용 금속 프레임.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080039904A KR101092616B1 (ko) | 2008-04-29 | 2008-04-29 | 전자 부품용 금속 프레임 |
CN2009801155806A CN102017136A (zh) | 2008-04-29 | 2009-03-26 | 电子零件用的金属导线架 |
JP2011507334A JP2011519180A (ja) | 2008-04-29 | 2009-03-26 | 電子部品用金属フレーム |
US12/990,073 US20110038135A1 (en) | 2008-04-29 | 2009-03-26 | Metal frame for electronic part |
EP09738919A EP2280413A4 (en) | 2008-04-29 | 2009-03-26 | METALLIC FRAMEWORK FOR ELECTRONIC COMPONENTS |
PCT/KR2009/001551 WO2009134012A2 (ko) | 2008-04-29 | 2009-03-26 | 전자 부품용 금속 프레임 |
TW098114031A TWI404185B (zh) | 2008-04-29 | 2009-04-28 | 電子零件用的金屬導線架 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020080039904A KR101092616B1 (ko) | 2008-04-29 | 2008-04-29 | 전자 부품용 금속 프레임 |
Publications (2)
Publication Number | Publication Date |
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KR20090114118A KR20090114118A (ko) | 2009-11-03 |
KR101092616B1 true KR101092616B1 (ko) | 2011-12-13 |
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ID=41255517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020080039904A KR101092616B1 (ko) | 2008-04-29 | 2008-04-29 | 전자 부품용 금속 프레임 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110038135A1 (ko) |
EP (1) | EP2280413A4 (ko) |
JP (1) | JP2011519180A (ko) |
KR (1) | KR101092616B1 (ko) |
CN (1) | CN102017136A (ko) |
TW (1) | TWI404185B (ko) |
WO (1) | WO2009134012A2 (ko) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100450091B1 (ko) * | 1999-10-01 | 2004-09-30 | 삼성테크윈 주식회사 | 반도체 장치용 다층 도금 리드 프레임 |
US20050230822A1 (en) * | 2004-04-06 | 2005-10-20 | Availableip.Com | NANO IC packaging |
Family Cites Families (20)
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JPS5947751A (ja) * | 1982-09-13 | 1984-03-17 | Nippon Mining Co Ltd | 半導体機器のリ−ド材用銅合金 |
JPS59117144A (ja) * | 1982-12-23 | 1984-07-06 | Toshiba Corp | リ−ドフレ−ムおよびその製造方法 |
JPS6250426A (ja) * | 1985-08-29 | 1987-03-05 | Furukawa Electric Co Ltd:The | 電子機器用銅合金 |
JP2522524B2 (ja) * | 1988-08-06 | 1996-08-07 | 株式会社東芝 | 半導体装置の製造方法 |
JPH04276037A (ja) * | 1991-03-04 | 1992-10-01 | Yamaha Corp | リードフレーム用銅合金 |
JP3728776B2 (ja) * | 1995-08-10 | 2005-12-21 | 三菱伸銅株式会社 | めっき予備処理工程中にスマットが発生することのない高強度銅合金 |
US5833920A (en) * | 1996-02-20 | 1998-11-10 | Mitsubishi Denki Kabushiki Kaisha | Copper alloy for electronic parts, lead-frame, semiconductor device and connector |
JP2868463B2 (ja) * | 1996-05-30 | 1999-03-10 | 九州日本電気株式会社 | 電子部品 |
EP0854200A1 (en) * | 1996-10-28 | 1998-07-22 | BRUSH WELLMAN Inc. | Copper-beryllium alloy |
JP3326085B2 (ja) * | 1996-12-20 | 2002-09-17 | 日本碍子株式会社 | TABテープ並びにそれに用いるBe−Cu合金箔およびその製造方法 |
JPH11260993A (ja) * | 1998-03-12 | 1999-09-24 | Furukawa Electric Co Ltd:The | 半田耐熱剥離性に優れる半導体装置用銅合金リード材 |
JP4043118B2 (ja) * | 1998-11-13 | 2008-02-06 | 株式会社神戸製鋼所 | 耐熱性に優れる電気・電子部品用高強度・高導電性Cu−Fe系合金板 |
TW459364B (en) * | 1999-04-28 | 2001-10-11 | Ind Tech Res Inst | Method and structure for strengthening lead frame used for semiconductor |
JP2001032029A (ja) * | 1999-05-20 | 2001-02-06 | Kobe Steel Ltd | 耐応力緩和特性に優れた銅合金及びその製造方法 |
US6469386B1 (en) * | 1999-10-01 | 2002-10-22 | Samsung Aerospace Industries, Ltd. | Lead frame and method for plating the same |
US7090732B2 (en) * | 2000-12-15 | 2006-08-15 | The Furukawa Electric, Co., Ltd. | High-mechanical strength copper alloy |
US7391116B2 (en) * | 2003-10-14 | 2008-06-24 | Gbc Metals, Llc | Fretting and whisker resistant coating system and method |
KR100824250B1 (ko) * | 2005-08-01 | 2008-04-24 | 엔이씨 일렉트로닉스 가부시키가이샤 | 금속 리드 부재를 피쳐링하는 반도체 패키지 |
JP2007254860A (ja) * | 2006-03-24 | 2007-10-04 | Fujitsu Ltd | めっき膜及びその形成方法 |
JP5191915B2 (ja) * | 2009-01-30 | 2013-05-08 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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2008
- 2008-04-29 KR KR1020080039904A patent/KR101092616B1/ko active IP Right Grant
-
2009
- 2009-03-26 CN CN2009801155806A patent/CN102017136A/zh active Pending
- 2009-03-26 EP EP09738919A patent/EP2280413A4/en not_active Withdrawn
- 2009-03-26 WO PCT/KR2009/001551 patent/WO2009134012A2/ko active Application Filing
- 2009-03-26 US US12/990,073 patent/US20110038135A1/en not_active Abandoned
- 2009-03-26 JP JP2011507334A patent/JP2011519180A/ja active Pending
- 2009-04-28 TW TW098114031A patent/TWI404185B/zh not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100450091B1 (ko) * | 1999-10-01 | 2004-09-30 | 삼성테크윈 주식회사 | 반도체 장치용 다층 도금 리드 프레임 |
US20050230822A1 (en) * | 2004-04-06 | 2005-10-20 | Availableip.Com | NANO IC packaging |
Also Published As
Publication number | Publication date |
---|---|
KR20090114118A (ko) | 2009-11-03 |
EP2280413A4 (en) | 2013-03-06 |
TW201001657A (en) | 2010-01-01 |
CN102017136A (zh) | 2011-04-13 |
US20110038135A1 (en) | 2011-02-17 |
TWI404185B (zh) | 2013-08-01 |
JP2011519180A (ja) | 2011-06-30 |
WO2009134012A3 (ko) | 2009-12-23 |
EP2280413A2 (en) | 2011-02-02 |
WO2009134012A2 (ko) | 2009-11-05 |
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