CN102017136A - 电子零件用的金属导线架 - Google Patents
电子零件用的金属导线架 Download PDFInfo
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- 239000002184 metal Substances 0.000 title claims abstract description 100
- 239000010949 copper Substances 0.000 claims abstract description 35
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052802 copper Inorganic materials 0.000 claims abstract description 29
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052790 beryllium Inorganic materials 0.000 claims abstract description 18
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052796 boron Inorganic materials 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims description 33
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 32
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- 229910052733 gallium Inorganic materials 0.000 description 1
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- 239000004332 silver Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
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- H01L23/495—Lead-frames or other flat leads
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Abstract
本发明的目的是提供一种适用于电子零件的金属导线架，此金属导线架能够最小化因晶须所造成的诸如电短路的缺陷。为实现此目的，本发明提供的适用于电子零件的金属导线架可包括引线单元，此引线单元以电性方式连接至电子元件，且引线单元可包括第一金属层，此第一金属层是以铜(Cu)为主要成分，且还包含硼(B)或铍(Be)。
Description
技术领域
本发明涉及一种适用于电子零件的金属导线架(metal frame)，且特别涉及一种适用于电子零件且能够最小化晶须(whiskers)所造成的缺陷(defects)的金属导线架。
背景技术
用于各种电性元件与电子元件的电子零件包括：诸如半导体元件等的电子构件或电子发光元件；以及金属导线架，其将电子构件以电性方式连接至外部电路元件，且具有支撑作用，以保持电子构件的形状。电子零件用的典型金属导线架是半导体封装(semiconductor package)中使用的引线框架(leadframe)。
电子零件用的金属导线架以电性方式连接至安装在金属导线架上的电子构件，也以电性方式连接至外部电路元件。在大多数情形下，与外部电路元件的电性连接可透过焊接(soldering)来达成。
焊接是一种用来接合(bonding)技术，其使用熔点(melting point)等于或低于450℃的焊料藉由仅熔化此焊料而不熔化基底金属(base metal)来接合想要接合的目标材料。
近年来，随着国际间对铅(Pb)的使用管制逐渐严厉，以锡为主要成分的无铅(Pb-free tin-based)焊料合金已普遍用于焊接。无铅焊料合金的主要典型范例有锡-银(Ag)基合金、锡-铜(Cu)基合金、锡-铋(Bi)基合金、锡-锌(Zn)基合金，这些无铅焊料合金以锡为主要成分，且适当地添加银、铜、锌、铟(In)、镍(Ni)、铬(Cr)、铁(Fe)、钴(Co)、锗(Ge)、磷(P)以及镓(Ga)。
同时，金属导线架与电子元件装配在一起，以形成电子零件。常使用的是铜基合金，其具有极佳的导电性与铅可焊性(Pd solderability)，且使用锡基合金来进行表面电镀(surface plating)。
然而，当金属导线架经过在长时间的久使用之后，此金属导线架与焊料合金之间或金属导线架的表面上容易形成晶须。这些晶须是当不同的材料相互接合且两种材料之间发生相互扩散(mutual diffusion)时在材料表面上形成的突出晶体(protruding crystals)，且这些晶须对热与湿度敏感。如果金属导线架的表面上形成有晶须，那么电路中就会发生电短路的现象，从而缩短电子零件的寿命。
发明内容
技术问题
本发明提供一种适用于电子零件的金属导线架，此金属导线架能够最小化晶须所造成的诸如电短路的缺陷。
技术手段
依照本发明的一观点，提供一种适用于电子零件的金属导线架，此金属导线架包括引线单元，此引线单元以电性方式连接至电子元件，其中引线单元包括第一金属层，此第一金属层是以铜(Cu)为主要成分且还包括硼(B)或铍(Be)。
硼或铍在所述第一金属层中占0.01至0.5wt％，而铜与杂质占剩余的重量百分比。
第一金属层可还包括铁(Fe)，且铁在所述第一金属层中占0.1至6wt％。
第一金属层可还包括磷(P)，且磷在所述第一金属层中占0.006至0.2wt％。
第一金属层可与至少一个引线单元形成一整体。
金属导线架可还包括安装单元(mounting unit)，电子元件安装在此安装单元上，且安装单元与引线单元可用相同的材料来形成。
金属导线架可还包括以锡为主要成分的第二金属层，此第二金属层是位于引线单元的表面上，且以电性方式连接到至少一个电子元件。在此情形下，第二金属层可以是以纯锡形成的电镀层。
本发明的有益效果
依照本发明，可提供一种适用于电子零件且能抑制晶须形成的金属导线架。
在金属导线架的至少一个表面上形成锡基金属层或甚至是纯锡电镀层也可避免晶须的形成。因此，可提供一种质优价廉的电子零件用金属导线架。
附图说明
图1是依照本发明的一实施例的一种适用于半导体封装的引线框架的平面图，其作为适用于电子零件的金属导线架的范例。
图2是一种半导体封装的横剖面图，且图2所示的半导体封装为对图1所示的引线框架进行模制制程所得到的半导体封装。
图3是图2所示的部分A的另一范例的放大横剖面图。
具体实施方式
下面将参照附图藉由阐述本发明的实施例来详细描述本发明。然而，本发明也可体现为许多不同的形态，而不应局限于本说明书所列举的实施例。确切地说，提供这些实施例是为了使揭示的内容更透彻更完整，且将本发明的概念充分地传递给本领域的技术人员。
图1是依照本发明的一实施例的一种适用于半导体封装的引线框架10的平面图，其为适用于电子零件的金属导线架的范例。图2是一种半导体封装的横剖面图，且图2所示的半导体封装为对图1所示的引线框架10进行模制制程(molding process)所得到的半导体封装。
请参照图1，引线框架10包括：晶粒垫(die pad)11，此晶粒垫11用作安装单元，也就是另一个元件(诸如半导体晶片12等记忆体元件)被安装在晶粒垫上；以及引线单元15，用以将半导体晶片12以电性方式连接至外部电路。依照本实施例的引线单元15可包括：内引线13，藉由电线接合(wirebonding)连接至半导体晶片12；以及外引线14，用以将半导体晶片12连接至外部电路。
如图2所示，半导体晶片12被安装在晶粒垫11上，且半导体晶片12透过电线16与内引线13接合，然后用树脂保护器(resin protector)17来模制引线框架10，且利用树脂保护器17来支撑引线框架10。
在引线框架10的上述结构中，至少一个引线单元15、特别是外引线14可利用以铜(Cu)为主要成分的合金来形成。此外，至少一个引线单元15、特别是外引线14可包括第一金属层，此第一金属层以铜为主要成分且还包含硼(B)或铍(Be)。此处，以铜为主要成分的合金是指以铜为基主的多元合金(poly-alloy)，其主要成分是铜，在此情形下，铜可至少占80wt％。由于引线单元15是以铜为主要成分，所以其具有足够的导电性与强度来作为引线单元。
依照本实施例，第一金属层可位于引线框架10的至少一个引线单元15与至少一焊料材料相接合的部分上，且可与至少一个引线单元15形成一整体。整个引线单元15可以是单一的第一金属层。
在引线框架10中，引线单元15、特别是外引线14、更特别是第一金属层可透过以锡为主要成分的焊料材料而以电性方式连接至外部电路。在此情形下，如同背景技术所述，引线单元15中的铜成分与焊料材料中的锡成分之间的相互扩散可导致晶须的形成。
为了抑制晶须的形成，本发明人在以铜为主要成分的引线单元15的第一金属层中添加铍(Be)或硼(B)来作为次要成分。
电子零件用的金属导线架(例如，半导体封装用的引线框架)透过以锡为主要成分的焊料材料来与外部电路接合。在此情形下，金属导线架与焊料材料之间的反应会导致焊料材料的表面上形成晶须，而导致晶须形成的原因至今仍未明。
本发明人注意到一个事实，若以铜为主要成分的金属导线架与以锡为主要成分的焊料材料接合，则金属导线架与焊料材料之间就会发生相互扩散。
详细地说，当金属导线架中的铜成分与焊料材料中的锡成分之间发生相互扩散时，铜成分从金属导线架扩散至焊料材料的速度会大于锡成分从焊料材料扩散至金属导线架的速度。特定言之，铜成分沿着焊料材料的晶界(grainboundaries)的扩散速度很大。而后，金属导线架与焊料材料之间的接合介面(bonding interface)上会形成金属间化合物(intermetallic compound)CuxSny。
本发明人认为，这种相互扩散造成焊料材料中产生压应力(compressivestress)，而为了减小这样的压应力，焊料材料的表面上会形成毛发状单晶体(single crystals)，即晶须。
因此，本发明人提出一种抑制晶须形成的方法，此方法是藉由将原子尺寸很小的金属渗透到焊料材料中的锡晶体的间隙位置(interstitial sites)来抑制铜与锡之间的金属间扩散，以抑制金属导线架与焊料材料之间的相互扩散，进而减小焊料材料中的压应力。详细地说，当铜与锡之间发生相互扩散时，金属导线架的第一金属层中所含的原子尺寸很小的金属在渗透到铜里面之前会先渗透到锡晶体的间隙位置。因此，铜与锡之间的金属间扩散会被抑制。
铍与硼被用作原子尺寸小的金属。
如此一来，第一金属层除了以铜为主要成分的合金以外，其还可包含作为次要成分的铍或硼，且第一金属层可仅包含铜与铍或铜与硼。
铜基合金中所含的铍或硼可占大约0.005wt％至0.5wt％。
与“次要成分(即，铍或硼)小于0.005wt％”的情形相比，大约0.005wt％至大约0.5wt％的铍或硼足以藉由使铍或硼扩散至焊料材料中的锡晶体的间隙位置来抑制晶须的形成。如此一来，即便是在诸如热冲击测试(thermal shocktest)与固定温度及湿度测试等严峻条件下，晶须也不会形成，稍后将对此进行描述。此时，若次要成分(即，铍或硼)大于0.5wt％，则渗透到铜的间隙位置的铍或硼会达到饱和，所以反而导致成本提高且降低经济效益。
在依照本实施例的引线框架10中，晶粒垫11与引线单元15可用相同的材料来形成。详细地说，晶粒垫11与引线单元15可利用相同的板料来冲压成形(press-formed)。
第一金属层可还包含铁(Fe)，以提高其刚性(rigidity)。
铁可占大约0.1wt％至大约6wt％。
由于铁的存在可以提升沈淀强化(precipitation strengthening)，进而可提高合金的强度。
另外，引线框架10可还包含磷(P)。
磷可占大约0.006wt％至大约0.2wt％。
磷可提高合金的强度。
此外，第一金属层可还包含少量镍(Ni)、锡(Sn)、铟(In)、镁(Mg)、锰(Mn)、硅(Si)、钛(Ti)、铬(Cr)等，目的是提高合金的强度，且第一金属层可还包含锌(Zn)，目的是提高氧化层的粘性、耐热性以及相对于焊料材料的抗分离性(separation resistance)。
同时，依照本发明的另一实施例，如图3所示，至少一个引线单元15、特别是外引线14可还包括第二金属层20，以防止引线框架10被侵蚀，且强化与焊料材料的接合。为了加强与焊料材料的接合，第二金属层20以锡为主要成分。
如上所述，以锡为主要成分的第二金属层20也可避免因引线框架10与第二金属层20之间发生反应而造成第二金属层20或焊料材料的表面上形成晶须。
详细地说，由于引线框架10中所含的铍或硼扩散到锡晶体的间隙位置，所以铜与锡之间的扩散被抑制，进而抑制了晶须的形成。
因此，对于有第二金属层20形成于其上的引线框架10，即便是长时间过后也能够抑制晶须的形成。
同时，依照本实施例，第二金属层20可以是用纯锡所形成的电镀层。
在一般的引线框架中，通常是采用的是利用锡基金属来进行电镀以加强与锡基焊料材料的接合，但由于利用纯锡来进行电镀会促使晶须的形成，所以并不适用。
然而，依照本实施例，由于引线框架10是用铜成分中含有铍或硼的金属材料来形成的，所以尽管引线框架10上形成由纯锡构成的电镀层，但如上文所述，此电镀层与引线框架10的基底金属之间的扩散可被抑制，因此可防止晶须形成。
纯锡比合金锡便宜且其与焊料材料之间的接合极佳。依照本实施例，引线框架10上可形成用纯锡构成的电镀层。
如此一来，可以提供具有极佳特性、无晶须且价格低廉的引线框架10。
同时，如图3所示，第二金属层20可形成在引线单元15的整个表面上，特别是形成在外引线14的整个表面上。为了防止整个引线框架10被侵蚀，第二金属层20可形成在包括晶粒垫11的引线框架10的整个表面上。
然而，若要执行额外的处理，也可以是在外引线14与焊料材料之间的接合部分14a的表面上形成第二金属层20。
虽然本发明已以实施例揭示如上，但其并非用以限定本发明，任何所属技术领域的技术人员，在不脱离本发明的精神和范围内，当可作些许更动与润饰，故本发明的保护范围当视所附权利要求所界定的范围为准。
再者，除了依照上述实施例的引线框架10之外，本发明还可适用于另一种半导体封装导线架，诸如球栅阵列(ball grid array，BGA)，也可适用于电子零件用的另一种金属导线架，诸如连接件(connector)。
本发明可应用于与锡基底金属材料相接触的各种电子零件用金属导线架。
Claims (10)
1.一种金属导线架，适用于电子零件，所述金属导线架包括引线单元，所述引线单元以电性方式连接至电子元件，其中所述引线单元包括第一金属层，所述第一金属层是以铜(Cu)为主要成分且还包含硼(B)或铍(Be)。
2.根据权利要求1所述的金属导线架，其中硼(B)或铍(Be)在所述第一金属层中占0.01至0.5wt％，而铜(Cu)与杂质占剩余的重量百分比。
3.根据权利要求1所述的金属导线架，其中所述第一金属层还包含铁(Fe)。
4.根据权利要求3所述的金属导线架，其中铁在所述第一金属层中占0.1至6wt％。
5.根据权利要求1所述的金属导线架，其中所述第一金属层还包含磷(P)。
6.根据权利要求5所述的金属导线架，其中磷(P)在所述第一金属层中占0.006至0.2wt％。
7.根据权利要求1至6中的任一项所述的金属导线架，其中所述第一金属层与至少一个所述引线单元形成一整体。
8.根据权利要求1至6中的任一项所述的金属导线架，还包括安装单元，所述电子元件安装在所述安装单元上，
其中所述安装单元与所述引线单元是由相同的材料所形成。
9.根据权利要求1至6中的任一项所述的金属导线架，还包括以锡为主要成分的第二金属层，所述第二金属层是位于所述引线单元的表面上，且以电性方式连接到至少一个所述电子元件。
10.根据权利要求9所述的金属导线架，其中所述第二金属层是用纯锡来形成的电镀层。
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| KR1020080039904A KR101092616B1 (ko) | 2008-04-29 | 2008-04-29 | 전자 부품용 금속 프레임 |
| PCT/KR2009/001551 WO2009134012A2 (ko) | 2008-04-29 | 2009-03-26 | 전자 부품용 금속 프레임 |
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| JPS5947751A (ja) * | 1982-09-13 | 1984-03-17 | Nippon Mining Co Ltd | 半導体機器のリ−ド材用銅合金 |
| JPS59117144A (ja) * | 1982-12-23 | 1984-07-06 | Toshiba Corp | リ−ドフレ−ムおよびその製造方法 |
| JPS6250426A (ja) * | 1985-08-29 | 1987-03-05 | Furukawa Electric Co Ltd:The | 電子機器用銅合金 |
| JP2522524B2 (ja) * | 1988-08-06 | 1996-08-07 | 株式会社東芝 | 半導体装置の製造方法 |
| JPH04276037A (ja) * | 1991-03-04 | 1992-10-01 | Yamaha Corp | リードフレーム用銅合金 |
| JP3728776B2 (ja) * | 1995-08-10 | 2005-12-21 | 三菱伸銅株式会社 | めっき予備処理工程中にスマットが発生することのない高強度銅合金 |
| US5833920A (en) * | 1996-02-20 | 1998-11-10 | Mitsubishi Denki Kabushiki Kaisha | Copper alloy for electronic parts, lead-frame, semiconductor device and connector |
| JP2868463B2 (ja) * | 1996-05-30 | 1999-03-10 | 九州日本電気株式会社 | 電子部品 |
| EP0854200A1 (en) * | 1996-10-28 | 1998-07-22 | BRUSH WELLMAN Inc. | Copper-beryllium alloy |
| JP3326085B2 (ja) * | 1996-12-20 | 2002-09-17 | 日本碍子株式会社 | ＴＡＢテープ並びにそれに用いるＢｅ−Ｃｕ合金箔およびその製造方法 |
| JPH11260993A (ja) * | 1998-03-12 | 1999-09-24 | Furukawa Electric Co Ltd:The | 半田耐熱剥離性に優れる半導体装置用銅合金リード材 |
| JP4043118B2 (ja) * | 1998-11-13 | 2008-02-06 | 株式会社神戸製鋼所 | 耐熱性に優れる電気・電子部品用高強度・高導電性Ｃｕ−Ｆｅ系合金板 |
| TW459364B (en) * | 1999-04-28 | 2001-10-11 | Ind Tech Res Inst | Method and structure for strengthening lead frame used for semiconductor |
| JP2001032029A (ja) * | 1999-05-20 | 2001-02-06 | Kobe Steel Ltd | 耐応力緩和特性に優れた銅合金及びその製造方法 |
| US6469386B1 (en) * | 1999-10-01 | 2002-10-22 | Samsung Aerospace Industries, Ltd. | Lead frame and method for plating the same |
| KR100450091B1 (ko) * | 1999-10-01 | 2004-09-30 | 삼성테크윈 주식회사 | 반도체 장치용 다층 도금 리드 프레임 |
| US7090732B2 (en) * | 2000-12-15 | 2006-08-15 | The Furukawa Electric, Co., Ltd. | High-mechanical strength copper alloy |
| US7391116B2 (en) * | 2003-10-14 | 2008-06-24 | Gbc Metals, Llc | Fretting and whisker resistant coating system and method |
| US7019391B2 (en) * | 2004-04-06 | 2006-03-28 | Bao Tran | NANO IC packaging |
| KR100824250B1 (ko) * | 2005-08-01 | 2008-04-24 | 엔이씨 일렉트로닉스 가부시키가이샤 | 금속 리드 부재를 피쳐링하는 반도체 패키지 |
| JP2007254860A (ja) * | 2006-03-24 | 2007-10-04 | Fujitsu Ltd | めっき膜及びその形成方法 |
| JP5191915B2 (ja) * | 2009-01-30 | 2013-05-08 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
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| US20110038135A1 (en) | 2011-02-17 |
| JP2011519180A (ja) | 2011-06-30 |
| WO2009134012A3 (ko) | 2009-12-23 |
| TWI404185B (zh) | 2013-08-01 |
| TW201001657A (en) | 2010-01-01 |
| EP2280413A2 (en) | 2011-02-02 |
| WO2009134012A2 (ko) | 2009-11-05 |
| EP2280413A4 (en) | 2013-03-06 |
| KR101092616B1 (ko) | 2011-12-13 |
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