JP4030758B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4030758B2
JP4030758B2 JP2001401281A JP2001401281A JP4030758B2 JP 4030758 B2 JP4030758 B2 JP 4030758B2 JP 2001401281 A JP2001401281 A JP 2001401281A JP 2001401281 A JP2001401281 A JP 2001401281A JP 4030758 B2 JP4030758 B2 JP 4030758B2
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island
shaped semiconductor
semiconductor films
laser
film
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Expired - Fee Related
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JP2001401281A
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Japanese (ja)
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JP2003203918A (ja
JP2003203918A5 (enExample
Inventor
宗広 浅見
千穂 小久保
愛子 志賀
敦生 磯部
寛 柴田
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2001401281A priority Critical patent/JP4030758B2/ja
Priority to US10/330,019 priority patent/US6911358B2/en
Publication of JP2003203918A publication Critical patent/JP2003203918A/ja
Priority to US11/159,278 priority patent/US7129121B2/en
Publication of JP2003203918A5 publication Critical patent/JP2003203918A5/ja
Priority to US11/514,973 priority patent/US7635883B2/en
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
JP2001401281A 2001-12-28 2001-12-28 半導体装置の作製方法 Expired - Fee Related JP4030758B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2001401281A JP4030758B2 (ja) 2001-12-28 2001-12-28 半導体装置の作製方法
US10/330,019 US6911358B2 (en) 2001-12-28 2002-12-27 Method for manufacturing semiconductor device
US11/159,278 US7129121B2 (en) 2001-12-28 2005-06-23 Method for manufacturing semiconductor device
US11/514,973 US7635883B2 (en) 2001-12-28 2006-09-05 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001401281A JP4030758B2 (ja) 2001-12-28 2001-12-28 半導体装置の作製方法

Publications (3)

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JP2003203918A JP2003203918A (ja) 2003-07-18
JP2003203918A5 JP2003203918A5 (enExample) 2005-08-04
JP4030758B2 true JP4030758B2 (ja) 2008-01-09

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JP (1) JP4030758B2 (enExample)

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JP3992976B2 (ja) * 2001-12-21 2007-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6841797B2 (en) 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
US6884668B2 (en) * 2002-02-22 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US6875998B2 (en) * 2002-03-26 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method of manufacturing the same, and method of designing the same
US6930326B2 (en) * 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
JP4474108B2 (ja) * 2002-09-02 2010-06-02 株式会社 日立ディスプレイズ 表示装置とその製造方法および製造装置
JP4593073B2 (ja) * 2002-12-26 2010-12-08 株式会社半導体エネルギー研究所 レーザ照射装置
US7476629B2 (en) * 2003-04-21 2009-01-13 Semiconductor Energy Laboratory Co., Ltd. Beam irradiation apparatus, beam irradiation method, and method for manufacturing thin film transistor
US7220627B2 (en) * 2003-04-21 2007-05-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device where the scanning direction changes between regions during crystallization and process
KR100519948B1 (ko) * 2003-05-20 2005-10-10 엘지.필립스 엘시디 주식회사 비정질 실리콘의 결정화 공정 및 이를 이용한 스위칭 소자
US6855588B1 (en) * 2003-10-07 2005-02-15 United Microelectronics Corp. Method of fabricating a double gate MOSFET device
US7186629B2 (en) * 2003-11-19 2007-03-06 Advanced Materials Sciences, Inc. Protecting thin semiconductor wafers during back-grinding in high-volume production
JP2005167084A (ja) * 2003-12-04 2005-06-23 Fujitsu Ltd レーザ結晶化装置及びレーザ結晶化方法
KR101207442B1 (ko) 2003-12-15 2012-12-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 집적회로장치의 제조방법, 비접촉형 박막 집적회로장치 및 그 제조 방법, 비접촉형 박막 집적회로 장치를 가지는 아이디 태그 및 동전
US7271076B2 (en) * 2003-12-19 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
US7566010B2 (en) 2003-12-26 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Securities, chip mounting product, and manufacturing method thereof
CN100502018C (zh) * 2004-02-06 2009-06-17 株式会社半导体能源研究所 薄膜集成电路的制造方法和元件基片
US7902002B2 (en) * 2004-07-30 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101203090B1 (ko) * 2004-07-30 2012-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
KR100689315B1 (ko) * 2004-08-10 2007-03-08 엘지.필립스 엘시디 주식회사 실리콘 박막 결정화 장치 및 이를 이용한 결정화 방법
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