JP3626933B2 - 基板載置台の製造方法 - Google Patents
基板載置台の製造方法 Download PDFInfo
- Publication number
- JP3626933B2 JP3626933B2 JP2001393918A JP2001393918A JP3626933B2 JP 3626933 B2 JP3626933 B2 JP 3626933B2 JP 2001393918 A JP2001393918 A JP 2001393918A JP 2001393918 A JP2001393918 A JP 2001393918A JP 3626933 B2 JP3626933 B2 JP 3626933B2
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- substrate
- dielectric material
- material film
- susceptor
- mounting table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims description 97
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 239000003989 dielectric material Substances 0.000 claims description 66
- 239000000463 material Substances 0.000 claims description 30
- 239000000919 ceramic Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 16
- 238000005507 spraying Methods 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 23
- 239000007789 gas Substances 0.000 description 22
- 238000005530 etching Methods 0.000 description 18
- 238000007751 thermal spraying Methods 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 9
- 239000011810 insulating material Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910008253 Zr2O3 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229920006015 heat resistant resin Polymers 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T279/00—Chucks or sockets
- Y10T279/23—Chucks or sockets with magnetic or electrostatic means
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001393918A JP3626933B2 (ja) | 2001-02-08 | 2001-12-26 | 基板載置台の製造方法 |
| TW091102269A TW548691B (en) | 2001-02-08 | 2002-02-07 | Substrate supporting table, method for manufacturing the same and processing apparatus |
| US10/067,506 US20020134511A1 (en) | 2001-02-08 | 2002-02-07 | Substrate supporting table,method for producing same, and processing system |
| KR1020020007113A KR20020066198A (ko) | 2001-02-08 | 2002-02-07 | 기판지지대 및 그 제조방법과 처리장치 |
| US11/032,138 US20050120962A1 (en) | 2001-02-08 | 2005-01-11 | Substrate supporting table, method for producing same, and processing system |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-32712 | 2001-02-08 | ||
| JP2001032712 | 2001-02-08 | ||
| JP2001393918A JP3626933B2 (ja) | 2001-02-08 | 2001-12-26 | 基板載置台の製造方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004121463A Division JP4126286B2 (ja) | 2001-02-08 | 2004-04-16 | 処理装置 |
| JP2004287124A Division JP2005033221A (ja) | 2001-02-08 | 2004-09-30 | 基板載置台および処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2002313898A JP2002313898A (ja) | 2002-10-25 |
| JP2002313898A5 JP2002313898A5 (enExample) | 2004-10-28 |
| JP3626933B2 true JP3626933B2 (ja) | 2005-03-09 |
Family
ID=26609147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001393918A Expired - Lifetime JP3626933B2 (ja) | 2001-02-08 | 2001-12-26 | 基板載置台の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US20020134511A1 (enExample) |
| JP (1) | JP3626933B2 (enExample) |
| KR (1) | KR20020066198A (enExample) |
| TW (1) | TW548691B (enExample) |
Families Citing this family (419)
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|---|---|---|---|---|
| JP4472372B2 (ja) * | 2003-02-03 | 2010-06-02 | 株式会社オクテック | プラズマ処理装置及びプラズマ処理装置用の電極板 |
| JP4128469B2 (ja) * | 2003-02-25 | 2008-07-30 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US7198276B2 (en) * | 2003-10-24 | 2007-04-03 | International Business Machines Corporation | Adaptive electrostatic pin chuck |
| US7663860B2 (en) | 2003-12-05 | 2010-02-16 | Tokyo Electron Limited | Electrostatic chuck |
| US7050147B2 (en) * | 2004-07-08 | 2006-05-23 | Asml Netherlands B.V. | Method of adjusting a height of protrusions on a support surface of a support table, a lithographic projection apparatus, and a support table for supporting an article in a lithographic apparatus |
| US7244311B2 (en) * | 2004-10-13 | 2007-07-17 | Lam Research Corporation | Heat transfer system for improved semiconductor processing uniformity |
| KR100707861B1 (ko) * | 2004-12-28 | 2007-04-18 | 효창산업 주식회사 | 엘씨디 글라스용 카세트의 유리 거치대 |
| JP4657824B2 (ja) * | 2005-06-17 | 2011-03-23 | 東京エレクトロン株式会社 | 基板載置台、基板処理装置および基板載置台の製造方法 |
| JP5059450B2 (ja) * | 2007-03-06 | 2012-10-24 | 東京エレクトロン株式会社 | 基板載置台及び基板処理装置 |
| WO2008114753A1 (ja) * | 2007-03-22 | 2008-09-25 | Tokyo Electron Limited | 基板載置台,基板処理装置,基板載置台の表面加工方法 |
| JP2008297615A (ja) * | 2007-06-01 | 2008-12-11 | Tokyo Electron Ltd | 基板載置機構及び該基板載置機構を備えた基板処理装置 |
| KR101016582B1 (ko) * | 2007-08-21 | 2011-02-22 | 주식회사 코미코 | 용사 돌기 형성용 마스크, 상기 마스크를 이용한 용사 돌기형성 방법 및 상기 마스크를 이용한 기판 지지대 제조방법 |
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| JP3983387B2 (ja) * | 1998-09-29 | 2007-09-26 | 日本碍子株式会社 | 静電チャック |
| US6320736B1 (en) * | 1999-05-17 | 2001-11-20 | Applied Materials, Inc. | Chuck having pressurized zones of heat transfer gas |
-
2001
- 2001-12-26 JP JP2001393918A patent/JP3626933B2/ja not_active Expired - Lifetime
-
2002
- 2002-02-07 KR KR1020020007113A patent/KR20020066198A/ko not_active Ceased
- 2002-02-07 TW TW091102269A patent/TW548691B/zh not_active IP Right Cessation
- 2002-02-07 US US10/067,506 patent/US20020134511A1/en not_active Abandoned
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2005
- 2005-01-11 US US11/032,138 patent/US20050120962A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| TW548691B (en) | 2003-08-21 |
| US20020134511A1 (en) | 2002-09-26 |
| KR20020066198A (ko) | 2002-08-14 |
| US20050120962A1 (en) | 2005-06-09 |
| JP2002313898A (ja) | 2002-10-25 |
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