JP2022503631A - 改良型研磨パッドのための配合物 - Google Patents
改良型研磨パッドのための配合物 Download PDFInfo
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- JP2022503631A JP2022503631A JP2021512234A JP2021512234A JP2022503631A JP 2022503631 A JP2022503631 A JP 2022503631A JP 2021512234 A JP2021512234 A JP 2021512234A JP 2021512234 A JP2021512234 A JP 2021512234A JP 2022503631 A JP2022503631 A JP 2022503631A
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- polishing
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- acrylate
- droplets
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Abstract
【選択図】図6
Description
ここに記載される実装態様は、概して、研磨プロセスにおいて使用される研磨用物品及び研磨用物品を製造するための方法に関する。具体的には、ここに記載される実装態様は、調節可能な性能を含む、改善された研磨パッドの特性及び性能を生むプロセスによって生産される研磨パッドに関する。
化学機械研磨(CMP)は、多数の異なる産業において使用され、基板の表面を平坦化する従来のプロセスである。半導体産業においては、デバイスの特徴部のサイズが低減し続けるにつれて、研磨及び平坦化の均一性がますます重要になっている。CMPプロセスの間に、シリコンウエハなどの基板は、回転する研磨パッドに接するように配置されるデバイス表面を有するキャリアヘッドに取り付けられる。キャリアヘッドは、基板に制御可能な荷重を提供し、デバイス表面を研磨パッドに対して押し付ける。研磨粒子を有するスラリーなどの研磨液は、一般に、動いている研磨パッドの表面と研磨ヘッドとに供給される。研磨パッドと研磨ヘッドが基板に機械的エネルギーを加える間に、パッドは、研磨プロセスの間に基板と相互作用するスラリーの輸送を制御するために役立つ。
ここに開示される改良型研磨パッド設計は、多くの異なるタイプの研磨装置において研磨プロセスを実施するために使用することができる。ここに提供される開示の範囲を制限することを意図しない一実施例では、改良型研磨パッドは、半導体基板を研磨するために使用される研磨ステーションに使用されうる。図1は、ここに記載される実装態様により形成された改良型研磨パッド106を有する研磨ステーション100の概略断面図である。研磨ステーション100は、複数の研磨ステーション100を含む、より大きな化学機械研磨(CMP)システム内に位置決めされうる。研磨ステーション100はプラテン102を含む。プラテン102は、中心軸104を中心にして回転しうる。改良型研磨パッド106は、プラテン102上に置くことができる。ここに提供される開示を限定することを意図しないが、一般に改良型研磨パッド106は、研磨ステーション100で処理される基板110のサイズ(例えば、基板直径)の少なくとも1から2倍の大きさのプラテン102の上表面103を覆う。一実施例では、改良型研磨パッド106及びプラテン102は、直径で約6インチ(150mm)と40インチ(1,016mm)の間である。改良型研磨パッド106は、1つ又は複数の基板110に接触して同基板を処理するよう構成にされた研磨面112を含む。プラテン102は、研磨中に、改良型研磨パッド106を支持し、改良型研磨パッド106を回転させる。キャリアヘッド108は、改良型研磨パッド106の研磨面112に接するように、処理中の基板110を保持することができる。研磨界面130は、研磨面112と基板110との間に形成される。キャリアヘッド108は、一般に、基板110を改良型研磨パッド106に接触させるために使用されるフレキシブルダイヤフラム111と、研磨プロセス中に基板の表面全体に見られる本質的に不均一な圧力分布を補正するために使用されるキャリアリング109とを含む。キャリアヘッド108は、中心軸114を中心にして回転することができる、及び/又は基板110と改良型研磨パッド106との間に相対運動を発生させるスイープ運動で動くことができる。
研磨装置に使用することのできる改良型研磨パッドの種々の構造的実装態様の実施例を、図2A-2Kと関連させて説明する。図2A-2Kに示される改良型研磨パッドは、例えば、図1に示される研磨ステーション100において使用することができる。別途指定のない限り、第1の研磨要素(複数可)204及び第2の研磨要素(複数可)206という用語は、改良型研磨パッド200の研磨体内部の部分、領域、及び/又は特徴部を広義に表す。いくつかの実装態様では、改良型研磨パッド200は、スラリーに曝露されるとパッドの表面にボイドを形成するポア又は材料を含む。図2A~図2Kに示される異なる改良型研磨パッドの具体的な実施例は、他の同様の実装態様がここに記載される1つ又は複数の付加製造プロセスの使用により形成されうるため、ここに提供される開示の範囲に関して限定的であることを意図していない。
ここに記載される改良型研磨パッドは、ここに記載される少なくとも1つの樹脂前駆体組成物から形成することができる。樹脂前駆体組成物は、少なくとも1つのプレポリマー組成物を含みうる。プレポリマー組成物は、インクジェット印刷可能なプレポリマー組成物であってよい。樹脂前駆体組成物は、以下の少なくとも1つを含むか、以下の少なくとも1つから本質的になるか、又は以下の少なくとも1つからなる:(1)1つ又は複数のオリゴマー成分;(2)1つ又は複数のモノマー成分;(3)1つ又は複数の光開始剤成分;(4)1つ又は複数の乳化剤/界面活性剤;(5)無機粒子、有機粒子又はそれらの両方;(6)1つ又は複数の多孔性形成剤;及び(7)追加の添加物。
(式中、AC=C及びAC=Oは、FT-IR分光法を使用して見られる、910cm-1におけるC=Cピーク及び1700cm-1におけるC=Oピークの値である)。重合中、アクリレート中のC=C結合はC-C結合に変換されるが、アクリレート中のC=Oに変換は生じない。したがって、C=CのC=Oに対する強度はアクリレート変換率を示す。AC=C/AC=O比は、硬化された液滴中のC=C結合のC=O結合に対する相対比を指し、したがって(AC=C/AC=O)0は、液滴中のAC=CのAC=Oに対する初期比を意味し、一方(AC=C/AC=O)xは、液滴が硬化された後の基板表面におけるAC=CのAC=Oに対する比を意味する。いくつかの実装態様では、一の層が最初に硬化される量は、分配された液滴のうちの約70%以上であってよい。いくつかの実装態様では、分配された液滴を約70%から約80%のレベルの硬化エネルギーに最初に曝露している間に、分配された液滴中の材料を部分的に硬化させ、それによって分配された液滴のターゲット接触角を達成し得ることが有用でありうる。上面上の未硬化の又は部分的アクリレート材料は、後続の液滴と共重合され、それにより層間の粘着が生み出されると考えられている。
以下の記載においてモノマーのTgは、モノマーのホモポリマーのガラス転移温度を指す。
Claims (15)
- UV硬化性樹脂前駆体組成物であって:
前駆体配合物を含み、前駆体配合物が:
準結晶性の脂肪族ポリエステルウレタンアクリレート、準結晶性の脂肪族ポリカーボネートウレタンアクリレート、準結晶性の脂肪族ポリエーテルウレタンアクリレート、又はこれらの組み合わせから選択される準結晶性の放射線硬化性オリゴマー材料を含む第1の樹脂前駆体成分;
単官能性又は多官能性アクリレートモノマーを含む第2の樹脂前駆体成分;及び
光開始剤
を含み、
前駆体配合物が、前駆体配合物を分配して付加製造プロセスにより研磨用物品の一部分を形成することを可能にする粘度を有する、UV硬化性樹脂前駆体組成物。 - 粘度が70℃で約5cPから約100cPの範囲内である、請求項1に記載の組成物。
- 粘度が70℃で約5cPから約50cPの範囲内である、請求項2に記載の組成物。
- 粘度が70℃で約10cPから約20cPの範囲内である、請求項2に記載の組成物。
- 準結晶性の脂肪族ポリエステルウレタンアクリレートが、2以上の官能基を有する、請求項1に記載の組成物。
- アクリレートモノマーが、イソボルニルアクリレート、ジシクロペンタニルアクリレート、ジシクロペンタニルメタクリレート、テトラヒドロフルフリルアクリレート、3、3、5-トリメチルシクロヘキシルアクリレート、1,3-ブタンジオールジアクリレート、1,4-ブタンジオールジアクリレート、又はこれらの組み合わせから選択される、請求項1に記載の組成物。
- 前駆体配合物が、約20から約30重量%の準結晶性の放射線硬化性オリゴマー材料を含む、請求項1に記載の組成物。
- 前駆体配合物が、約50から約80重量%の単官能性又は多官能性アクリレートモノマーを含む、請求項7に記載の組成物。
- 前駆体配合物が、約0.5%から約2.5重量%の光開始剤を含む、請求項8に記載の組成物。
- 研磨用物品を形成する方法であって、
ターゲット厚に到達するように、3Dプリンタを用いて複数の複合層を堆積させることを含み、複数の複合層を堆積させることが:
硬化性樹脂前駆体組成物の1つ又は複数の液滴を支持体の上に分配することを含み、硬化性樹脂前駆体組成物が:
準結晶性の脂肪族ポリエステルウレタンアクリレート、準結晶性の脂肪族ポリカーボネートウレタンアクリレート、準結晶性の脂肪族ポリエーテルウレタンアクリレート、又はこれらの組み合わせから選択される準結晶性の放射線硬化性オリゴマー材料を含む第1の樹脂前駆体成分;
単官能性又は多官能性アクリレートモノマーを含む第2の樹脂前駆体成分;及び
光開始剤
を含み、
硬化性樹脂前駆体組成物が、硬化性樹脂前駆体組成物を分配して付加製造プロセスにより研磨用物品の一部分を形成することを可能にする粘度を有する、研磨用物品を形成する方法。 - 準結晶性の脂肪族ポリエステルウレタンアクリレートが、2以上の官能基を有する、請求項10に記載の方法。
- アクリレートモノマーが、イソボルニルアクリレート、ジシクロペンタニルアクリレート、ジシクロペンタニルメタクリレート、テトラヒドロフルフリルアクリレート、3、3、5-トリメチルシクロヘキシルアクリレート、1,3-ブタンジオールジアクリレート、1,4-ブタンジオールジアクリレート、又はこれらの組み合わせから選択される、請求項10に記載の方法。
- 多孔性形成組成物の1つ又は複数の液滴を支持体の上に分配することを更に含み、多孔性形成組成物の少なくとも1つの成分が、研磨用物品にポアを形成するために除去可能である、請求項10に記載の方法。
- 多孔性形成組成物が、グリコール、グリコール-エーテル、アミン、又はこれらの組み合わせから選択される多孔性形成剤を含む、請求項13に記載の方法。
- 分配された硬化性樹脂前駆体組成物の1つ又は複数の液滴と、分配された多孔性形成組成物の1つ又は複数の液滴とを部分的に硬化させた後で、分配された硬化性樹脂前駆体組成物の1つ又は複数の液滴と、分配された多孔性形成組成物の1つ又は複数の液滴とを、アニーリング処理、すすぎプロセス、又はこれらの両方のうちの少なくとも1つに曝露することを更に含む、請求項14に記載の方法。
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Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
CN107078048B (zh) | 2014-10-17 | 2021-08-13 | 应用材料公司 | 使用加成制造工艺的具复合材料特性的cmp衬垫建构 |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
CN113103145B (zh) | 2015-10-30 | 2023-04-11 | 应用材料公司 | 形成具有期望ζ电位的抛光制品的设备与方法 |
US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
KR20210042171A (ko) | 2018-09-04 | 2021-04-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 진보한 폴리싱 패드들을 위한 제형들 |
US11738517B2 (en) | 2020-06-18 | 2023-08-29 | Applied Materials, Inc. | Multi dispense head alignment using image processing |
EP4196352A1 (en) * | 2020-08-11 | 2023-06-21 | William Marsh Rice University | 3d printed silica with nanoscale resolution |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
US11951590B2 (en) | 2021-06-14 | 2024-04-09 | Applied Materials, Inc. | Polishing pads with interconnected pores |
US11911870B2 (en) * | 2021-09-10 | 2024-02-27 | Applied Materials, Inc. | Polishing pads for high temperature processing |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170203408A1 (en) * | 2016-01-19 | 2017-07-20 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
US20170203406A1 (en) * | 2016-01-19 | 2017-07-20 | Applied Materials, Inc. | Porous chemical mechanical polishing pads |
JP2017533585A (ja) * | 2014-10-17 | 2017-11-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 付加製造プロセスにより製作される研磨パッド |
US20180100074A1 (en) * | 2016-10-11 | 2018-04-12 | Xerox Corporation | Ink composition for use in 3d printing |
JP2018533487A (ja) * | 2015-10-16 | 2018-11-15 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 付加製造プロセスを用いて高機能研磨パッドを形成する方法及び装置 |
Family Cites Families (634)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2001911A (en) | 1932-04-21 | 1935-05-21 | Carborundum Co | Abrasive articles |
US3357598A (en) | 1965-09-21 | 1967-12-12 | Dole Valve Co | Adjustable liquid dispenser |
US3741116A (en) | 1970-06-25 | 1973-06-26 | American Screen Process Equip | Vacuum belt |
US4459779A (en) | 1982-09-16 | 1984-07-17 | International Business Machines Corporation | Fixed abrasive grinding media |
US4575330A (en) | 1984-08-08 | 1986-03-11 | Uvp, Inc. | Apparatus for production of three-dimensional objects by stereolithography |
US4836832A (en) | 1986-08-11 | 1989-06-06 | Minnesota Mining And Manufacturing Company | Method of preparing coated abrasive having radiation curable binder |
US4841680A (en) | 1987-08-25 | 1989-06-27 | Rodel, Inc. | Inverted cell pad material for grinding, lapping, shaping and polishing |
US4942001A (en) | 1988-03-02 | 1990-07-17 | Inc. DeSoto | Method of forming a three-dimensional object by stereolithography and composition therefore |
DE3808951A1 (de) | 1988-03-17 | 1989-10-05 | Basf Ag | Photopolymerisierbare, zur herstellung von druckformen geeignete druckplatte |
US4844144A (en) | 1988-08-08 | 1989-07-04 | Desoto, Inc. | Investment casting utilizing patterns produced by stereolithography |
JPH07102724B2 (ja) | 1988-08-31 | 1995-11-08 | ジューキ株式会社 | 印字装置 |
US5121329A (en) | 1989-10-30 | 1992-06-09 | Stratasys, Inc. | Apparatus and method for creating three-dimensional objects |
US5387380A (en) | 1989-12-08 | 1995-02-07 | Massachusetts Institute Of Technology | Three-dimensional printing techniques |
DE3942859A1 (de) | 1989-12-23 | 1991-07-04 | Basf Ag | Verfahren zur herstellung von bauteilen |
US5626919A (en) | 1990-03-01 | 1997-05-06 | E. I. Du Pont De Nemours And Company | Solid imaging apparatus and method with coating station |
US5096530A (en) | 1990-06-28 | 1992-03-17 | 3D Systems, Inc. | Resin film recoating method and apparatus |
JP2929779B2 (ja) | 1991-02-15 | 1999-08-03 | トヨタ自動車株式会社 | 炭素被膜付撥水ガラス |
JPH05188528A (ja) | 1991-06-25 | 1993-07-30 | Eastman Kodak Co | 圧力吸収保護層含有写真要素 |
US5212910A (en) | 1991-07-09 | 1993-05-25 | Intel Corporation | Composite polishing pad for semiconductor process |
US5193316A (en) | 1991-10-29 | 1993-03-16 | Texas Instruments Incorporated | Semiconductor wafer polishing using a hydrostatic medium |
US5287663A (en) | 1992-01-21 | 1994-02-22 | National Semiconductor Corporation | Polishing pad and method for polishing semiconductor wafers |
US5178646A (en) | 1992-01-22 | 1993-01-12 | Minnesota Mining And Manufacturing Company | Coatable thermally curable binder presursor solutions modified with a reactive diluent, abrasive articles incorporating same, and methods of making said abrasive articles |
MY114512A (en) | 1992-08-19 | 2002-11-30 | Rodel Inc | Polymeric substrate with polymeric microelements |
US6022264A (en) | 1997-02-10 | 2000-02-08 | Rodel Inc. | Polishing pad and methods relating thereto |
US6099394A (en) | 1998-02-10 | 2000-08-08 | Rodel Holdings, Inc. | Polishing system having a multi-phase polishing substrate and methods relating thereto |
US6746225B1 (en) | 1992-11-30 | 2004-06-08 | Bechtel Bwtx Idaho, Llc | Rapid solidification processing system for producing molds, dies and related tooling |
JP3649442B2 (ja) | 1992-12-17 | 2005-05-18 | ミネソタ・マイニング・アンド・マニュファクチュアリング・カンパニー | 低減粘度スラリー、それから作製される研磨用品、および該用品の製造方法 |
JPH07297195A (ja) | 1994-04-27 | 1995-11-10 | Speedfam Co Ltd | 半導体装置の平坦化方法及び平坦化装置 |
US5906863A (en) | 1994-08-08 | 1999-05-25 | Lombardi; John | Methods for the preparation of reinforced three-dimensional bodies |
JPH08132342A (ja) | 1994-11-08 | 1996-05-28 | Hitachi Ltd | 半導体集積回路装置の製造装置 |
KR100258802B1 (ko) | 1995-02-15 | 2000-06-15 | 전주범 | 평탄화 장치 및 그를 이용한 평탄화 방법 |
US6719818B1 (en) | 1995-03-28 | 2004-04-13 | Applied Materials, Inc. | Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations |
US5533923A (en) | 1995-04-10 | 1996-07-09 | Applied Materials, Inc. | Chemical-mechanical polishing pad providing polishing unformity |
US5645471A (en) | 1995-08-11 | 1997-07-08 | Minnesota Mining And Manufacturing Company | Method of texturing a substrate using an abrasive article having multiple abrasive natures |
US5605760A (en) | 1995-08-21 | 1997-02-25 | Rodel, Inc. | Polishing pads |
JP3324643B2 (ja) | 1995-10-25 | 2002-09-17 | 日本電気株式会社 | 研磨パッド |
US5738574A (en) | 1995-10-27 | 1998-04-14 | Applied Materials, Inc. | Continuous processing system for chemical mechanical polishing |
US5905099A (en) | 1995-11-06 | 1999-05-18 | Minnesota Mining And Manufacturing Company | Heat-activatable adhesive composition |
US5609517A (en) | 1995-11-20 | 1997-03-11 | International Business Machines Corporation | Composite polishing pad |
JP3566430B2 (ja) | 1995-12-20 | 2004-09-15 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
US5624303A (en) | 1996-01-22 | 1997-04-29 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
US6095084A (en) | 1996-02-02 | 2000-08-01 | Applied Materials, Inc. | High density plasma process chamber |
US5778481A (en) | 1996-02-15 | 1998-07-14 | International Business Machines Corporation | Silicon wafer cleaning and polishing pads |
US5690540A (en) | 1996-02-23 | 1997-11-25 | Micron Technology, Inc. | Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers |
US6090475A (en) | 1996-05-24 | 2000-07-18 | Micron Technology Inc. | Polishing pad, methods of manufacturing and use |
JP3498881B2 (ja) | 1996-05-27 | 2004-02-23 | セントラル硝子株式会社 | 撥水性ガラスの製法 |
US5976000A (en) | 1996-05-28 | 1999-11-02 | Micron Technology, Inc. | Polishing pad with incompressible, highly soluble particles for chemical-mechanical planarization of semiconductor wafers |
US5748434A (en) | 1996-06-14 | 1998-05-05 | Applied Materials, Inc. | Shield for an electrostatic chuck |
GB2316414B (en) | 1996-07-31 | 2000-10-11 | Tosoh Corp | Abrasive shaped article, abrasive disc and polishing method |
US5795218A (en) | 1996-09-30 | 1998-08-18 | Micron Technology, Inc. | Polishing pad with elongated microcolumns |
US6244575B1 (en) | 1996-10-02 | 2001-06-12 | Micron Technology, Inc. | Method and apparatus for vaporizing liquid precursors and system for using same |
US5876490A (en) | 1996-12-09 | 1999-03-02 | International Business Machines Corporatin | Polish process and slurry for planarization |
KR100210840B1 (ko) | 1996-12-24 | 1999-07-15 | 구본준 | 기계 화학적 연마 방법 및 그 장치 |
US5876268A (en) | 1997-01-03 | 1999-03-02 | Minnesota Mining And Manufacturing Company | Method and article for the production of optical quality surfaces on glass |
EP0984846B1 (en) | 1997-01-13 | 2004-11-24 | Rodel, Inc. | Method of manufacturing a polymeric polishing pad having photolithographically induced surface pattern |
US5965460A (en) | 1997-01-29 | 1999-10-12 | Mac Dermid, Incorporated | Polyurethane composition with (meth)acrylate end groups useful in the manufacture of polishing pads |
US6231629B1 (en) | 1997-03-07 | 2001-05-15 | 3M Innovative Properties Company | Abrasive article for providing a clear surface finish on glass |
WO1998039142A1 (en) * | 1997-03-07 | 1998-09-11 | Minnesota Mining And Manufacturing Company | Abrasive article for providing a clear surface finish on glass |
US5910471A (en) | 1997-03-07 | 1999-06-08 | Minnesota Mining And Manufacturing Company | Abrasive article for providing a clear surface finish on glass |
US5944583A (en) | 1997-03-17 | 1999-08-31 | International Business Machines Corporation | Composite polish pad for CMP |
US6062958A (en) | 1997-04-04 | 2000-05-16 | Micron Technology, Inc. | Variable abrasive polishing pad for mechanical and chemical-mechanical planarization |
US6682402B1 (en) | 1997-04-04 | 2004-01-27 | Rodel Holdings, Inc. | Polishing pads and methods relating thereto |
US6648733B2 (en) | 1997-04-04 | 2003-11-18 | Rodel Holdings, Inc. | Polishing pads and methods relating thereto |
US5940674A (en) | 1997-04-09 | 1999-08-17 | Massachusetts Institute Of Technology | Three-dimensional product manufacture using masks |
KR20010006518A (ko) | 1997-04-18 | 2001-01-26 | 매튜 네빌 | 반도체 기판용 연마 패드 |
US6126532A (en) | 1997-04-18 | 2000-10-03 | Cabot Corporation | Polishing pads for a semiconductor substrate |
US8092707B2 (en) | 1997-04-30 | 2012-01-10 | 3M Innovative Properties Company | Compositions and methods for modifying a surface suited for semiconductor fabrication |
US5945058A (en) | 1997-05-13 | 1999-08-31 | 3D Systems, Inc. | Method and apparatus for identifying surface features associated with selected lamina of a three-dimensional object being stereolithographically formed |
US6273806B1 (en) | 1997-05-15 | 2001-08-14 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus |
US5921855A (en) | 1997-05-15 | 1999-07-13 | Applied Materials, Inc. | Polishing pad having a grooved pattern for use in a chemical mechanical polishing system |
US6692338B1 (en) | 1997-07-23 | 2004-02-17 | Lsi Logic Corporation | Through-pad drainage of slurry during chemical mechanical polishing |
US6736714B2 (en) | 1997-07-30 | 2004-05-18 | Praxair S.T. Technology, Inc. | Polishing silicon wafers |
US5919082A (en) | 1997-08-22 | 1999-07-06 | Micron Technology, Inc. | Fixed abrasive polishing pad |
US6121143A (en) | 1997-09-19 | 2000-09-19 | 3M Innovative Properties Company | Abrasive articles comprising a fluorochemical agent for wafer surface modification |
US5888121A (en) | 1997-09-23 | 1999-03-30 | Lsi Logic Corporation | Controlling groove dimensions for enhanced slurry flow |
US5932040A (en) | 1997-10-01 | 1999-08-03 | Bibielle S.P.A. | Method for producing a ring of abrasive elements from which to form a rotary brush |
US6950193B1 (en) | 1997-10-28 | 2005-09-27 | Rockwell Automation Technologies, Inc. | System for monitoring substrate conditions |
US6039836A (en) | 1997-12-19 | 2000-03-21 | Lam Research Corporation | Focus rings |
US6231942B1 (en) | 1998-01-21 | 2001-05-15 | Trexel, Inc. | Method and apparatus for microcellular polypropylene extrusion, and polypropylene articles produced thereby |
JPH11254542A (ja) | 1998-03-11 | 1999-09-21 | Sanyo Electric Co Ltd | 光造形装置のモニタリングシステム |
US6228133B1 (en) | 1998-05-01 | 2001-05-08 | 3M Innovative Properties Company | Abrasive articles having abrasive layer bond system derived from solid, dry-coated binder precursor particles having a fusible, radiation curable component |
JPH11347761A (ja) | 1998-06-12 | 1999-12-21 | Mitsubishi Heavy Ind Ltd | レーザによる3次元造形装置 |
US6122564A (en) | 1998-06-30 | 2000-09-19 | Koch; Justin | Apparatus and methods for monitoring and controlling multi-layer laser cladding |
US6117000A (en) | 1998-07-10 | 2000-09-12 | Cabot Corporation | Polishing pad for a semiconductor substrate |
US6322728B1 (en) | 1998-07-10 | 2001-11-27 | Jeneric/Pentron, Inc. | Mass production of dental restorations by solid free-form fabrication methods |
DE19834559A1 (de) | 1998-07-31 | 2000-02-03 | Friedrich Schiller Uni Jena Bu | Verfahren zur Herstellung von Werkzeugen für die Bearbeitung von Oberflächen |
JP2000061817A (ja) | 1998-08-24 | 2000-02-29 | Nikon Corp | 研磨パッド |
US6095902A (en) | 1998-09-23 | 2000-08-01 | Rodel Holdings, Inc. | Polyether-polyester polyurethane polishing pads and related methods |
US6602380B1 (en) | 1998-10-28 | 2003-08-05 | Micron Technology, Inc. | Method and apparatus for releasably attaching a polishing pad to a chemical-mechanical planarization machine |
US6325706B1 (en) | 1998-10-29 | 2001-12-04 | Lam Research Corporation | Use of zeta potential during chemical mechanical polishing for end point detection |
US6176992B1 (en) | 1998-11-03 | 2001-01-23 | Nutool, Inc. | Method and apparatus for electro-chemical mechanical deposition |
US6390890B1 (en) | 1999-02-06 | 2002-05-21 | Charles J Molnar | Finishing semiconductor wafers with a fixed abrasive finishing element |
JP3641956B2 (ja) | 1998-11-30 | 2005-04-27 | 三菱住友シリコン株式会社 | 研磨スラリーの再生システム |
US6206759B1 (en) | 1998-11-30 | 2001-03-27 | Micron Technology, Inc. | Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines |
US7425250B2 (en) | 1998-12-01 | 2008-09-16 | Novellus Systems, Inc. | Electrochemical mechanical processing apparatus |
KR100585480B1 (ko) | 1999-01-21 | 2006-06-02 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 | 개선된 연마 패드 및 기판의 연마 방법 |
US6994607B2 (en) | 2001-12-28 | 2006-02-07 | Applied Materials, Inc. | Polishing pad with window |
US6179709B1 (en) | 1999-02-04 | 2001-01-30 | Applied Materials, Inc. | In-situ monitoring of linear substrate polishing operations |
US6641463B1 (en) | 1999-02-06 | 2003-11-04 | Beaver Creek Concepts Inc | Finishing components and elements |
CN1345264A (zh) | 1999-03-30 | 2002-04-17 | 株式会社尼康 | 抛光盘、抛光机、抛光方法及制造半导体器件的方法 |
US6217426B1 (en) | 1999-04-06 | 2001-04-17 | Applied Materials, Inc. | CMP polishing pad |
JP2000301450A (ja) | 1999-04-19 | 2000-10-31 | Rohm Co Ltd | Cmp研磨パッドおよびそれを用いたcmp処理装置 |
US6213845B1 (en) | 1999-04-26 | 2001-04-10 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same |
US6338901B1 (en) | 1999-05-03 | 2002-01-15 | Guardian Industries Corporation | Hydrophobic coating including DLC on substrate |
US6328634B1 (en) | 1999-05-11 | 2001-12-11 | Rodel Holdings Inc. | Method of polishing |
US6196899B1 (en) | 1999-06-21 | 2001-03-06 | Micron Technology, Inc. | Polishing apparatus |
JP2001018163A (ja) | 1999-07-06 | 2001-01-23 | Speedfam Co Ltd | 研磨用パッド |
US6319108B1 (en) | 1999-07-09 | 2001-11-20 | 3M Innovative Properties Company | Metal bond abrasive article comprising porous ceramic abrasive composites and method of using same to abrade a workpiece |
JP2001105329A (ja) | 1999-08-02 | 2001-04-17 | Ebara Corp | 研磨用砥石 |
US6232236B1 (en) | 1999-08-03 | 2001-05-15 | Applied Materials, Inc. | Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system |
US6328632B1 (en) | 1999-08-31 | 2001-12-11 | Micron Technology, Inc. | Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies |
US6201208B1 (en) | 1999-11-04 | 2001-03-13 | Wisconsin Alumni Research Foundation | Method and apparatus for plasma processing with control of ion energy distribution at the substrates |
US6257973B1 (en) | 1999-11-04 | 2001-07-10 | Norton Company | Coated abrasive discs |
US6399501B2 (en) | 1999-12-13 | 2002-06-04 | Applied Materials, Inc. | Method and apparatus for detecting polishing endpoint with optical monitoring |
WO2001043920A1 (en) | 1999-12-14 | 2001-06-21 | Rodel Holdings, Inc. | Method of manufacturing a polymer or polymer composite polishing pad |
US6368184B1 (en) | 2000-01-06 | 2002-04-09 | Advanced Micro Devices, Inc. | Apparatus for determining metal CMP endpoint using integrated polishing pad electrodes |
US6241596B1 (en) | 2000-01-14 | 2001-06-05 | Applied Materials, Inc. | Method and apparatus for chemical mechanical polishing using a patterned pad |
US6506097B1 (en) | 2000-01-18 | 2003-01-14 | Applied Materials, Inc. | Optical monitoring in a two-step chemical mechanical polishing process |
US20010041511A1 (en) | 2000-01-19 | 2001-11-15 | Lack Craig D. | Printing of polishing pads |
US7071041B2 (en) | 2000-01-20 | 2006-07-04 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device |
US6746311B1 (en) | 2000-01-24 | 2004-06-08 | 3M Innovative Properties Company | Polishing pad with release layer |
US6309276B1 (en) | 2000-02-01 | 2001-10-30 | Applied Materials, Inc. | Endpoint monitoring with polishing rate change |
US6991528B2 (en) | 2000-02-17 | 2006-01-31 | Applied Materials, Inc. | Conductive polishing article for electrochemical mechanical polishing |
WO2001064396A1 (en) | 2000-02-28 | 2001-09-07 | Rodel Holdings, Inc. | Polishing pad surface texture formed by solid phase droplets |
KR100502268B1 (ko) | 2000-03-01 | 2005-07-22 | 가부시끼가이샤 히다치 세이사꾸쇼 | 플라즈마처리장치 및 방법 |
US6797623B2 (en) | 2000-03-09 | 2004-09-28 | Sony Corporation | Methods of producing and polishing semiconductor device and polishing apparatus |
US7300619B2 (en) | 2000-03-13 | 2007-11-27 | Objet Geometries Ltd. | Compositions and methods for use in three dimensional model printing |
US8481241B2 (en) | 2000-03-13 | 2013-07-09 | Stratasys Ltd. | Compositions and methods for use in three dimensional model printing |
US6569373B2 (en) | 2000-03-13 | 2003-05-27 | Object Geometries Ltd. | Compositions and methods for use in three dimensional model printing |
US20030207959A1 (en) | 2000-03-13 | 2003-11-06 | Eduardo Napadensky | Compositions and methods for use in three dimensional model printing |
KR100789663B1 (ko) | 2000-03-15 | 2007-12-31 | 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 | 연마층에 투명 윈도우 부분을 갖는 연마 패드 |
ATE278535T1 (de) | 2000-03-24 | 2004-10-15 | Generis Gmbh | Verfahren und vorrichtung zur herstellung eines strukturbauteils mittels einer mehrschicht- auftragstechnik, und form oder kern herstellbar durch dieses verfahren |
KR20010093677A (ko) | 2000-03-29 | 2001-10-29 | 추후기재 | 향상된 슬러리 분배를 위하여 특수 설계된 연마 패드 |
US6313038B1 (en) | 2000-04-26 | 2001-11-06 | Micron Technology, Inc. | Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates |
US20020058468A1 (en) | 2000-05-03 | 2002-05-16 | Eppert Stanley E. | Semiconductor polishing pad |
US6387289B1 (en) | 2000-05-04 | 2002-05-14 | Micron Technology, Inc. | Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6267641B1 (en) | 2000-05-19 | 2001-07-31 | Motorola, Inc. | Method of manufacturing a semiconductor component and chemical-mechanical polishing system therefor |
US8485862B2 (en) | 2000-05-19 | 2013-07-16 | Applied Materials, Inc. | Polishing pad for endpoint detection and related methods |
US6736709B1 (en) | 2000-05-27 | 2004-05-18 | Rodel Holdings, Inc. | Grooved polishing pads for chemical mechanical planarization |
US6749485B1 (en) | 2000-05-27 | 2004-06-15 | Rodel Holdings, Inc. | Hydrolytically stable grooved polishing pads for chemical mechanical planarization |
US6454634B1 (en) | 2000-05-27 | 2002-09-24 | Rodel Holdings Inc. | Polishing pads for chemical mechanical planarization |
US6860802B1 (en) | 2000-05-27 | 2005-03-01 | Rohm And Haas Electric Materials Cmp Holdings, Inc. | Polishing pads for chemical mechanical planarization |
EP1295682B1 (en) | 2000-05-31 | 2007-10-24 | JSR Corporation | Abrasive material |
JP3925041B2 (ja) | 2000-05-31 | 2007-06-06 | Jsr株式会社 | 研磨パッド用組成物及びこれを用いた研磨パッド |
US6478914B1 (en) | 2000-06-09 | 2002-11-12 | Micron Technology, Inc. | Method for attaching web-based polishing materials together on a polishing tool |
US6656019B1 (en) | 2000-06-29 | 2003-12-02 | International Business Machines Corporation | Grooved polishing pads and methods of use |
JP2002028849A (ja) | 2000-07-17 | 2002-01-29 | Jsr Corp | 研磨パッド |
US20020016139A1 (en) | 2000-07-25 | 2002-02-07 | Kazuto Hirokawa | Polishing tool and manufacturing method therefor |
US6520834B1 (en) | 2000-08-09 | 2003-02-18 | Micron Technology, Inc. | Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates |
US6776699B2 (en) | 2000-08-14 | 2004-08-17 | 3M Innovative Properties Company | Abrasive pad for CMP |
US6736869B1 (en) | 2000-08-28 | 2004-05-18 | Micron Technology, Inc. | Method for forming a planarizing pad for planarization of microelectronic substrates |
US6592443B1 (en) | 2000-08-30 | 2003-07-15 | Micron Technology, Inc. | Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6638831B1 (en) | 2000-08-31 | 2003-10-28 | Micron Technology, Inc. | Use of a reference fiducial on a semiconductor package to monitor and control a singulation method |
JP3886712B2 (ja) | 2000-09-08 | 2007-02-28 | シャープ株式会社 | 半導体装置の製造方法 |
US6477926B1 (en) | 2000-09-15 | 2002-11-12 | Ppg Industries Ohio, Inc. | Polishing pad |
US6641471B1 (en) | 2000-09-19 | 2003-11-04 | Rodel Holdings, Inc | Polishing pad having an advantageous micro-texture and methods relating thereto |
EP1324859B1 (en) | 2000-09-29 | 2011-01-26 | Strasbaugh, Inc. | Polishing pad with built-in optical sensor |
WO2002038688A2 (en) | 2000-11-09 | 2002-05-16 | 3M Innovative Properties Company | Weather resistant, ink jettable, radiation curable, fluid compositions particularly suitable for outdoor applications |
JP2002151447A (ja) | 2000-11-13 | 2002-05-24 | Asahi Kasei Corp | 研磨パッド |
US6684704B1 (en) | 2002-09-12 | 2004-02-03 | Psiloquest, Inc. | Measuring the surface properties of polishing pads using ultrasonic reflectance |
US7192340B2 (en) | 2000-12-01 | 2007-03-20 | Toyo Tire & Rubber Co., Ltd. | Polishing pad, method of producing the same, and cushion layer for polishing pad |
JP2002200555A (ja) | 2000-12-28 | 2002-07-16 | Ebara Corp | 研磨工具および該研磨工具を具備したポリッシング装置 |
US6407669B1 (en) | 2001-02-02 | 2002-06-18 | 3M Innovative Properties Company | RFID tag device and method of manufacturing |
GB0103754D0 (en) | 2001-02-15 | 2001-04-04 | Vantico Ltd | Three-dimensional structured printing |
US20020112632A1 (en) | 2001-02-21 | 2002-08-22 | Creo Ltd | Method for supporting sensitive workpieces during processing |
WO2002070200A1 (en) | 2001-03-01 | 2002-09-12 | Cabot Microelectronics Corporation | Method for manufacturing a polishing pad having a compressed translucent region |
US6811680B2 (en) | 2001-03-14 | 2004-11-02 | Applied Materials Inc. | Planarization of substrates using electrochemical mechanical polishing |
US7955693B2 (en) | 2001-04-20 | 2011-06-07 | Tolland Development Company, Llc | Foam composition roller brush with embedded mandrel |
US6847014B1 (en) | 2001-04-30 | 2005-01-25 | Lam Research Corporation | Method and apparatus for controlling the spatial temperature distribution across the surface of a workpiece support |
US6811937B2 (en) | 2001-06-21 | 2004-11-02 | Dsm Desotech, Inc. | Radiation-curable resin composition and rapid prototyping process using the same |
US6544373B2 (en) | 2001-07-26 | 2003-04-08 | United Microelectronics Corp. | Polishing pad for a chemical mechanical polishing process |
US6586494B2 (en) | 2001-08-08 | 2003-07-01 | Spectra Group Limited, Inc. | Radiation curable inkjet composition |
KR100646702B1 (ko) | 2001-08-16 | 2006-11-17 | 에스케이씨 주식회사 | 홀 및/또는 그루브로 형성된 화학적 기계적 연마패드 |
KR20030020658A (ko) | 2001-09-04 | 2003-03-10 | 삼성전자주식회사 | 화학적물리적 연마장치의 연마패드 콘디셔닝 디스크 |
US6866807B2 (en) | 2001-09-21 | 2005-03-15 | Stratasys, Inc. | High-precision modeling filament |
JP4077192B2 (ja) | 2001-11-30 | 2008-04-16 | 株式会社東芝 | 化学機械研磨方法および半導体装置の製造方法 |
US6599765B1 (en) | 2001-12-12 | 2003-07-29 | Lam Research Corporation | Apparatus and method for providing a signal port in a polishing pad for optical endpoint detection |
US6838149B2 (en) | 2001-12-13 | 2005-01-04 | 3M Innovative Properties Company | Abrasive article for the deposition and polishing of a conductive material |
JP2003188124A (ja) | 2001-12-14 | 2003-07-04 | Rodel Nitta Co | 研磨布 |
EP1326273B1 (en) | 2001-12-28 | 2012-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US20030134581A1 (en) | 2002-01-11 | 2003-07-17 | Wang Hsing Maw | Device for chemical mechanical polishing |
JP2003303793A (ja) | 2002-04-12 | 2003-10-24 | Hitachi Ltd | 研磨装置および半導体装置の製造方法 |
US6773474B2 (en) | 2002-04-19 | 2004-08-10 | 3M Innovative Properties Company | Coated abrasive article |
JP4693024B2 (ja) | 2002-04-26 | 2011-06-01 | 東洋ゴム工業株式会社 | 研磨材 |
US6815570B1 (en) | 2002-05-07 | 2004-11-09 | Uop Llc | Shaped catalysts for transalkylation of aromatics for enhanced xylenes production |
US20050194681A1 (en) | 2002-05-07 | 2005-09-08 | Yongqi Hu | Conductive pad with high abrasion |
US20050276967A1 (en) | 2002-05-23 | 2005-12-15 | Cabot Microelectronics Corporation | Surface textured microporous polishing pads |
US6913517B2 (en) | 2002-05-23 | 2005-07-05 | Cabot Microelectronics Corporation | Microporous polishing pads |
KR100669301B1 (ko) | 2002-06-03 | 2007-01-16 | 제이에스알 가부시끼가이샤 | 연마 패드 및 복층형 연마 패드 |
DE10224981B4 (de) | 2002-06-05 | 2004-08-19 | Generis Gmbh | Verfahren zum schichtweisen Aufbau von Modellen |
JP3801100B2 (ja) | 2002-06-07 | 2006-07-26 | Jsr株式会社 | 光硬化造形装置、光硬化造形方法及び光硬化造形システム |
WO2003103959A1 (en) | 2002-06-07 | 2003-12-18 | Praxair S.T. Technology, Inc. | Controlled penetration subpad |
US8602851B2 (en) | 2003-06-09 | 2013-12-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Controlled penetration subpad |
EP1375617A1 (en) | 2002-06-19 | 2004-01-02 | 3M Innovative Properties Company | Radiation-curable, solvent-free and printable precursor of a pressure-sensitive adhesive |
US7169014B2 (en) | 2002-07-18 | 2007-01-30 | Micron Technology, Inc. | Apparatuses for controlling the temperature of polishing pads used in planarizing micro-device workpieces |
KR101016081B1 (ko) | 2002-07-26 | 2011-02-17 | 닛토덴코 가부시키가이샤 | 점착 시트와 그의 제조방법, 상기 점착 시트의 사용방법,및 상기 점착 시트에 사용되는 다층 시트와 그의 제조방법 |
TWI228768B (en) | 2002-08-08 | 2005-03-01 | Jsr Corp | Processing method of polishing pad for semiconductor wafer and polishing pad for semiconductor wafer |
KR100465649B1 (ko) | 2002-09-17 | 2005-01-13 | 한국포리올 주식회사 | 일체형 연마 패드 및 그 제조 방법 |
US7579071B2 (en) | 2002-09-17 | 2009-08-25 | Korea Polyol Co., Ltd. | Polishing pad containing embedded liquid microelements and method of manufacturing the same |
US6896765B2 (en) | 2002-09-18 | 2005-05-24 | Lam Research Corporation | Method and apparatus for the compensation of edge ring wear in a plasma processing chamber |
US20040058623A1 (en) | 2002-09-20 | 2004-03-25 | Lam Research Corporation | Polishing media for chemical mechanical planarization (CMP) |
US7435165B2 (en) | 2002-10-28 | 2008-10-14 | Cabot Microelectronics Corporation | Transparent microporous materials for CMP |
US7267607B2 (en) | 2002-10-28 | 2007-09-11 | Cabot Microelectronics Corporation | Transparent microporous materials for CMP |
US7311862B2 (en) | 2002-10-28 | 2007-12-25 | Cabot Microelectronics Corporation | Method for manufacturing microporous CMP materials having controlled pore size |
AU2003278047A1 (en) | 2002-10-31 | 2004-05-25 | Stephen F. Corbin | System and method for closed-loop control of laser cladding by powder injection |
JP2004153193A (ja) | 2002-11-01 | 2004-05-27 | Disco Abrasive Syst Ltd | 半導体ウエーハの処理方法 |
DE10253445A1 (de) | 2002-11-16 | 2004-06-03 | Adam Opel Ag | Verfahren und Vorrichtung zum Abdichten und Aufpumpen von Reifen bei Pannen sowie Dichtmittelbehälter als auch Adapter hierfür |
WO2004049417A1 (ja) | 2002-11-27 | 2004-06-10 | Toyo Tire & Rubber Co., Ltd. | 研磨パッド及び半導体デバイスの製造方法 |
JP2004235446A (ja) | 2003-01-30 | 2004-08-19 | Toyobo Co Ltd | 研磨パッド |
JP4659338B2 (ja) | 2003-02-12 | 2011-03-30 | Hoya株式会社 | 情報記録媒体用ガラス基板の製造方法並びにそれに使用する研磨パッド |
US7498394B2 (en) | 2003-02-24 | 2009-03-03 | The Regents Of The University Of Colorado | (Meth)acrylic and (meth)acrylamide monomers, polymerizable compositions, and polymers obtained |
US7104773B2 (en) | 2003-03-07 | 2006-09-12 | Ricoh Printing Systems, Ltd. | Three-dimensional laminating molding device |
DE10310385B4 (de) | 2003-03-07 | 2006-09-21 | Daimlerchrysler Ag | Verfahren zur Herstellung von dreidimensionalen Körpern mittels pulverbasierter schichtaufbauender Verfahren |
JP2004281685A (ja) | 2003-03-14 | 2004-10-07 | Mitsubishi Electric Corp | 半導体基板の研磨用パッドおよび半導体基板の研磨方法 |
US20060189269A1 (en) | 2005-02-18 | 2006-08-24 | Roy Pradip K | Customized polishing pads for CMP and methods of fabrication and use thereof |
US7377840B2 (en) | 2004-07-21 | 2008-05-27 | Neopad Technologies Corporation | Methods for producing in-situ grooves in chemical mechanical planarization (CMP) pads, and novel CMP pad designs |
US7704125B2 (en) | 2003-03-24 | 2010-04-27 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
AU2004225931A1 (en) | 2003-03-25 | 2004-10-14 | Neopad Technologies Corporation | Chip customized polish pads for chemical mechanical planarization (CMP) |
US9278424B2 (en) | 2003-03-25 | 2016-03-08 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US8864859B2 (en) | 2003-03-25 | 2014-10-21 | Nexplanar Corporation | Customized polishing pads for CMP and methods of fabrication and use thereof |
US7044836B2 (en) | 2003-04-21 | 2006-05-16 | Cabot Microelectronics Corporation | Coated metal oxide particles for CMP |
DE602004001268T2 (de) | 2003-04-25 | 2007-06-06 | Jsr Corp. | Polierkissen und chemisch-mechanisches Polierverfahren |
US6783436B1 (en) | 2003-04-29 | 2004-08-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with optimized grooves and method of forming same |
JPWO2004100242A1 (ja) | 2003-05-09 | 2006-07-13 | 三洋化成工業株式会社 | Cmpプロセス用研磨液及び研磨方法 |
KR101148770B1 (ko) | 2003-05-21 | 2012-05-24 | 3디 시스템즈 인코오퍼레이티드 | 3d 인쇄 시스템으로부터의 외관 모형용 열가소성 분말 물질 시스템 |
IL156094A0 (en) | 2003-05-25 | 2003-12-23 | J G Systems Inc | Fixed abrasive cmp pad with built-in additives |
US7435161B2 (en) | 2003-06-17 | 2008-10-14 | Cabot Microelectronics Corporation | Multi-layer polishing pad material for CMP |
US6998166B2 (en) | 2003-06-17 | 2006-02-14 | Cabot Microelectronics Corporation | Polishing pad with oriented pore structure |
JP4130614B2 (ja) | 2003-06-18 | 2008-08-06 | 株式会社東芝 | 半導体装置の製造方法 |
US7018560B2 (en) | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
US20050032464A1 (en) | 2003-08-07 | 2005-02-10 | Swisher Robert G. | Polishing pad having edge surface treatment |
WO2005016599A1 (en) | 2003-08-08 | 2005-02-24 | Mykrolys Corporation | Methods and materials for making a monolithic porous pad cast onto a rotatable base |
US7120512B2 (en) | 2003-08-25 | 2006-10-10 | Hewlett-Packard Development Company, L.P. | Method and a system for solid freeform fabricating using non-reactive powder |
EP1661690A4 (en) | 2003-08-27 | 2009-08-12 | Fujifilm Corp | METHOD FOR PRODUCING A THREE-DIMENSIONAL MODEL |
KR100590202B1 (ko) | 2003-08-29 | 2006-06-15 | 삼성전자주식회사 | 연마 패드 및 그 형성방법 |
JP2005074614A (ja) | 2003-09-03 | 2005-03-24 | Nitta Haas Inc | 研磨パッドの製造方法および研磨パッド |
JP2005085917A (ja) | 2003-09-08 | 2005-03-31 | Sharp Corp | プラズマプロセス装置 |
JP2005093785A (ja) | 2003-09-18 | 2005-04-07 | Toshiba Corp | Cmp用スラリー、研磨方法、および半導体装置の製造方法 |
KR100640998B1 (ko) | 2003-09-19 | 2006-11-02 | 엘지.필립스 엘시디 주식회사 | 액정표시장치용 브라켓 구조 |
GB0323462D0 (en) | 2003-10-07 | 2003-11-05 | Fujifilm Electronic Imaging | Providing a surface layer or structure on a substrate |
US6855588B1 (en) | 2003-10-07 | 2005-02-15 | United Microelectronics Corp. | Method of fabricating a double gate MOSFET device |
US20050109371A1 (en) | 2003-10-27 | 2005-05-26 | Applied Materials, Inc. | Post CMP scrubbing of substrates |
JP2005131732A (ja) | 2003-10-30 | 2005-05-26 | Ebara Corp | 研磨装置 |
KR101152747B1 (ko) | 2003-10-31 | 2012-06-18 | 어플라이드 머티어리얼스, 인코포레이티드 | 마찰 센서를 이용한 폴리싱 종료점 탐지 시스템 및 방법 |
US7264641B2 (en) | 2003-11-10 | 2007-09-04 | Cabot Microelectronics Corporation | Polishing pad comprising biodegradable polymer |
US20050101228A1 (en) | 2003-11-10 | 2005-05-12 | Cabot Microelectronics Corporation | Polishing pad comprising biodegradable polymer |
JP2005150235A (ja) | 2003-11-12 | 2005-06-09 | Three M Innovative Properties Co | 半導体表面保護シート及び方法 |
US7125318B2 (en) | 2003-11-13 | 2006-10-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad having a groove arrangement for reducing slurry consumption |
US6984163B2 (en) | 2003-11-25 | 2006-01-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with high optical transmission window |
JP4555559B2 (ja) | 2003-11-25 | 2010-10-06 | 富士紡ホールディングス株式会社 | 研磨布及び研磨布の製造方法 |
US7186164B2 (en) | 2003-12-03 | 2007-03-06 | Applied Materials, Inc. | Processing pad assembly with zone control |
US6843711B1 (en) | 2003-12-11 | 2005-01-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Chemical mechanical polishing pad having a process-dependent groove configuration |
US20050153634A1 (en) | 2004-01-09 | 2005-07-14 | Cabot Microelectronics Corporation | Negative poisson's ratio material-containing CMP polishing pad |
US20050171224A1 (en) | 2004-02-03 | 2005-08-04 | Kulp Mary J. | Polyurethane polishing pad |
US7132033B2 (en) | 2004-02-27 | 2006-11-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of forming a layered polishing pad |
WO2005088690A1 (ja) | 2004-03-11 | 2005-09-22 | Toyo Tire & Rubber Co., Ltd. | 研磨パッドおよび半導体デバイスの製造方法 |
US20050208234A1 (en) | 2004-03-19 | 2005-09-22 | Agfa-Gevaert | Ink-jet recording material |
US7195544B2 (en) | 2004-03-23 | 2007-03-27 | Cabot Microelectronics Corporation | CMP porous pad with component-filled pores |
US7204742B2 (en) | 2004-03-25 | 2007-04-17 | Cabot Microelectronics Corporation | Polishing pad comprising hydrophobic region and endpoint detection port |
US6955588B1 (en) | 2004-03-31 | 2005-10-18 | Lam Research Corporation | Method of and platen for controlling removal rate characteristics in chemical mechanical planarization |
JP2005294661A (ja) | 2004-04-02 | 2005-10-20 | Hitachi Chem Co Ltd | 研磨パッド及びそれを用いる研磨方法 |
JP2004243518A (ja) | 2004-04-08 | 2004-09-02 | Toshiba Corp | 研摩装置 |
US20050227590A1 (en) | 2004-04-09 | 2005-10-13 | Chien-Min Sung | Fixed abrasive tools and associated methods |
TWI293266B (en) | 2004-05-05 | 2008-02-11 | Iv Technologies Co Ltd | A single-layer polishing pad and a method of producing the same |
EP1763703A4 (en) | 2004-05-12 | 2010-12-08 | Massachusetts Inst Technology | MANUFACTURING METHOD, SUCH AS A THREE DIMENSIONAL PRINTING, INCLUDING FORMATION OF FILMS USING SOLVENT VAPOR AND THE LIKE |
US20050260939A1 (en) | 2004-05-18 | 2005-11-24 | Saint-Gobain Abrasives, Inc. | Brazed diamond dressing tool |
EP1747878A4 (en) | 2004-05-20 | 2010-10-13 | Bridgestone Corp | SHUTTERING DEVICE OF SEALING AGENT, METHOD FOR POURING A SEALING AGENT AND APPARATUS FOR PUMPING SEALING AGENT |
US20050261150A1 (en) | 2004-05-21 | 2005-11-24 | Battelle Memorial Institute, A Part Interest | Reactive fluid systems for removing deposition materials and methods for using same |
US7252871B2 (en) | 2004-06-16 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad having a pressure relief channel |
US7582127B2 (en) | 2004-06-16 | 2009-09-01 | Cabot Microelectronics Corporation | Polishing composition for a tungsten-containing substrate |
KR101078007B1 (ko) | 2004-06-21 | 2011-10-28 | 가부시키가이샤 에바라 세이사꾸쇼 | 폴리싱장치 및 폴리싱방법 |
JP4133945B2 (ja) | 2004-06-28 | 2008-08-13 | 住友ゴム工業株式会社 | タイヤのパンクシーリング剤送給、抜取り装置 |
WO2006003697A1 (ja) | 2004-06-30 | 2006-01-12 | Toho Engineering Kabushiki Kaisha | 研磨パッドおよびその製造方法 |
US20060014475A1 (en) | 2004-07-15 | 2006-01-19 | Disco Corporation | Grindstone tool |
US7709053B2 (en) | 2004-07-29 | 2010-05-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of manufacturing of polymer-coated particles for chemical mechanical polishing |
WO2006020685A2 (en) | 2004-08-11 | 2006-02-23 | Cornell Research Foundation, Inc. | Modular fabrication systems and methods |
US7153191B2 (en) | 2004-08-20 | 2006-12-26 | Micron Technology, Inc. | Polishing liquids for activating and/or conditioning fixed abrasive polishing pads, and associated systems and methods |
US8075372B2 (en) | 2004-09-01 | 2011-12-13 | Cabot Microelectronics Corporation | Polishing pad with microporous regions |
DE102004042911A1 (de) | 2004-09-02 | 2006-03-09 | Michael Stehle | Vorrichtung zum Ausbringen von Luft- und/oder Reifendichtmittel |
US20060079159A1 (en) | 2004-10-08 | 2006-04-13 | Markus Naujok | Chemical mechanical polish with multi-zone abrasive-containing matrix |
US20060096179A1 (en) | 2004-11-05 | 2006-05-11 | Cabot Microelectronics Corporation | CMP composition containing surface-modified abrasive particles |
WO2006057713A2 (en) | 2004-11-29 | 2006-06-01 | Rajeev Bajaj | Electro-method and apparatus for improved chemical mechanical planarization pad with uniform polish performance |
US7530880B2 (en) | 2004-11-29 | 2009-05-12 | Semiquest Inc. | Method and apparatus for improved chemical mechanical planarization pad with pressure control and process monitor |
US7815778B2 (en) | 2005-11-23 | 2010-10-19 | Semiquest Inc. | Electro-chemical mechanical planarization pad with uniform polish performance |
US7846008B2 (en) | 2004-11-29 | 2010-12-07 | Semiquest Inc. | Method and apparatus for improved chemical mechanical planarization and CMP pad |
KR101181786B1 (ko) | 2004-12-10 | 2012-09-11 | 도요 고무 고교 가부시키가이샤 | 연마 패드 및 연마 패드의 제조 방법 |
US7059950B1 (en) | 2004-12-14 | 2006-06-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | CMP polishing pad having grooves arranged to improve polishing medium utilization |
US7059949B1 (en) | 2004-12-14 | 2006-06-13 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | CMP pad having an overlapping stepped groove arrangement |
US7182677B2 (en) | 2005-01-14 | 2007-02-27 | Applied Materials, Inc. | Chemical mechanical polishing pad for controlling polishing slurry distribution |
TWI385050B (zh) | 2005-02-18 | 2013-02-11 | Nexplanar Corp | 用於cmp之特製拋光墊及其製造方法及其用途 |
US7524345B2 (en) | 2005-02-22 | 2009-04-28 | Saint-Gobain Abrasives, Inc. | Rapid tooling system and methods for manufacturing abrasive articles |
US7875091B2 (en) | 2005-02-22 | 2011-01-25 | Saint-Gobain Abrasives, Inc. | Rapid tooling system and methods for manufacturing abrasive articles |
JP2006231464A (ja) | 2005-02-24 | 2006-09-07 | Nitta Haas Inc | 研磨パッド |
US7829000B2 (en) | 2005-02-25 | 2010-11-09 | Hewlett-Packard Development Company, L.P. | Core-shell solid freeform fabrication |
TWI410314B (zh) | 2005-04-06 | 2013-10-01 | 羅門哈斯電子材料Cmp控股公司 | 藉由反應-射出成形製造多孔化學機械研磨墊之裝置 |
EP1710324B1 (en) | 2005-04-08 | 2008-12-03 | STMicroelectronics S.r.l. | PVD process and chamber for the pulsed deposition of a chalcogenide material layer of a phase change memory device |
US7427340B2 (en) | 2005-04-08 | 2008-09-23 | Applied Materials, Inc. | Conductive pad |
US7435364B2 (en) | 2005-04-11 | 2008-10-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for forming a porous polishing pad |
JP2006305650A (ja) | 2005-04-26 | 2006-11-09 | Inoac Corp | 研磨用吸着パッド及びその製造方法 |
US8393934B2 (en) | 2006-11-16 | 2013-03-12 | Chien-Min Sung | CMP pad dressers with hybridized abrasive surface and related methods |
US8398466B2 (en) | 2006-11-16 | 2013-03-19 | Chien-Min Sung | CMP pad conditioners with mosaic abrasive segments and associated methods |
KR100949560B1 (ko) | 2005-05-17 | 2010-03-25 | 도요 고무 고교 가부시키가이샤 | 연마 패드 |
KR100721196B1 (ko) | 2005-05-24 | 2007-05-23 | 주식회사 하이닉스반도체 | 연마패드 및 이를 이용한 화학적기계적연마장치 |
JP2007005612A (ja) | 2005-06-24 | 2007-01-11 | Hitachi Chem Co Ltd | 研磨パッド及びその製造方法及び基板の研磨方法 |
CN1897226A (zh) | 2005-07-11 | 2007-01-17 | 上海华虹Nec电子有限公司 | 一种化学机械抛光机 |
JP4512529B2 (ja) | 2005-07-15 | 2010-07-28 | 住友精密工業株式会社 | エッチング方法及びエッチング装置 |
US8557351B2 (en) | 2005-07-22 | 2013-10-15 | Molecular Imprints, Inc. | Method for adhering materials together |
KR100727485B1 (ko) | 2005-08-09 | 2007-06-13 | 삼성전자주식회사 | 연마 패드 및 이를 제조하는 방법, 그리고 화학적 기계적 연마 장치 및 방법 |
US20070117393A1 (en) | 2005-11-21 | 2007-05-24 | Alexander Tregub | Hardened porous polymer chemical mechanical polishing (CMP) pad |
JP4868840B2 (ja) | 2005-11-30 | 2012-02-01 | Jsr株式会社 | 半導体装置の製造方法 |
CN1851896A (zh) | 2005-12-05 | 2006-10-25 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 一种静电卡盘 |
US20070128991A1 (en) | 2005-12-07 | 2007-06-07 | Yoon Il-Young | Fixed abrasive polishing pad, method of preparing the same, and chemical mechanical polishing apparatus including the same |
KR20070070094A (ko) | 2005-12-28 | 2007-07-03 | 제이에스알 가부시끼가이샤 | 화학 기계 연마 패드 및 화학 기계 연마 방법 |
US20070149094A1 (en) | 2005-12-28 | 2007-06-28 | Choi Jae Y | Monitoring Device of Chemical Mechanical Polishing Apparatus |
EP1975985A4 (en) | 2006-01-25 | 2011-08-10 | Jsr Corp | CHEMICAL-MECHANICAL POLISHING ELEMENT AND METHOD OF MANUFACTURING THEREOF |
US7935276B2 (en) | 2006-02-09 | 2011-05-03 | Headwaters Technology Innovation Llc | Polymeric materials incorporating carbon nanostructures |
EP1994194A1 (en) | 2006-02-23 | 2008-11-26 | Picodeon Ltd OY | Coating on a fiber substrate and a coated fiber product |
JP2007235001A (ja) | 2006-03-03 | 2007-09-13 | Mitsui Chemicals Inc | 研磨用スラリー |
US20070204420A1 (en) | 2006-03-06 | 2007-09-06 | Hornby David M | Polishing pad and method of making |
US7517488B2 (en) | 2006-03-08 | 2009-04-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of forming a chemical mechanical polishing pad utilizing laser sintering |
US20070212979A1 (en) | 2006-03-09 | 2007-09-13 | Rimpad Tech Ltd. | Composite polishing pad |
WO2007111996A2 (en) | 2006-03-24 | 2007-10-04 | Clemson University | Conducting polymer ink |
US20070235133A1 (en) | 2006-03-29 | 2007-10-11 | Strasbaugh | Devices and methods for measuring wafer characteristics during semiconductor wafer polishing |
US20070235904A1 (en) | 2006-04-06 | 2007-10-11 | Saikin Alan H | Method of forming a chemical mechanical polishing pad utilizing laser sintering |
FR2900411B1 (fr) | 2006-04-27 | 2008-08-29 | Coatex Sas | Procede de traitement de matieres minerales par des polymeres amphoteres,matieres minerales obtenues,leur utilisation comme agent reducteur de la quantite de colloides dans la fabrication de papier. |
US7445847B2 (en) | 2006-05-25 | 2008-11-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
US7169030B1 (en) | 2006-05-25 | 2007-01-30 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
EP2032345B1 (en) | 2006-06-20 | 2010-05-05 | Katholieke Universiteit Leuven | Procedure and apparatus for in-situ monitoring and feedback control of selective laser powder processing |
US7840305B2 (en) | 2006-06-28 | 2010-11-23 | 3M Innovative Properties Company | Abrasive articles, CMP monitoring system and method |
US20080220702A1 (en) | 2006-07-03 | 2008-09-11 | Sang Fang Chemical Industry Co., Ltd. | Polishing pad having surface texture |
JP5186738B2 (ja) | 2006-07-10 | 2013-04-24 | 富士通セミコンダクター株式会社 | 研磨パッドの製造方法及び被研磨体の研磨方法 |
TWI409136B (zh) | 2006-07-19 | 2013-09-21 | Innopad Inc | 表面具微溝槽之化學機械平坦化墊 |
KR100804275B1 (ko) | 2006-07-24 | 2008-02-18 | 에스케이씨 주식회사 | 고분자 쉘로 둘러싸인 액상 유기물 코어를 포함하는 cmp연마패드 및 그 제조방법 |
US7267610B1 (en) | 2006-08-30 | 2007-09-11 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | CMP pad having unevenly spaced grooves |
US7300340B1 (en) | 2006-08-30 | 2007-11-27 | Rohm and Haas Electronics Materials CMP Holdings, Inc. | CMP pad having overlaid constant area spiral grooves |
JP4326587B2 (ja) | 2006-09-06 | 2009-09-09 | ニッタ・ハース株式会社 | 研磨パッド |
JP2008084504A (ja) | 2006-09-29 | 2008-04-10 | Hitachi Ltd | 光ディスク装置および光ディスクの再生方法 |
US7382959B1 (en) | 2006-10-13 | 2008-06-03 | Hrl Laboratories, Llc | Optically oriented three-dimensional polymer microstructures |
US7234224B1 (en) | 2006-11-03 | 2007-06-26 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Curved grooving of polishing pads |
US7648645B2 (en) | 2006-11-08 | 2010-01-19 | 3M Innovative Properties Company | Pre-polymer formulations for liquid crystal displays |
WO2008077850A2 (en) | 2006-12-21 | 2008-07-03 | Agfa Graphics Nv | 3d-inkjet printing methods |
US7438636B2 (en) | 2006-12-21 | 2008-10-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad |
US7371160B1 (en) | 2006-12-21 | 2008-05-13 | Rohm And Haas Electronic Materials Cmp Holdings Inc. | Elastomer-modified chemical mechanical polishing pad |
US7497885B2 (en) | 2006-12-22 | 2009-03-03 | 3M Innovative Properties Company | Abrasive articles with nanoparticulate fillers and method for making and using them |
US8083820B2 (en) | 2006-12-22 | 2011-12-27 | 3M Innovative Properties Company | Structured fixed abrasive articles including surface treated nano-ceria filler, and method for making and using the same |
US7520798B2 (en) | 2007-01-31 | 2009-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with grooves to reduce slurry consumption |
US7311590B1 (en) | 2007-01-31 | 2007-12-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with grooves to retain slurry on the pad texture |
TWI432285B (zh) | 2007-02-01 | 2014-04-01 | Kuraray Co | 研磨墊及研磨墊之製法 |
EP2654089A3 (en) | 2007-02-16 | 2015-08-12 | Nanogram Corporation | Solar cell structures, photovoltaic modules and corresponding processes |
CN101678527B (zh) | 2007-03-20 | 2011-08-03 | 可乐丽股份有限公司 | 用于抛光垫的衬垫和使用该衬垫的抛光垫 |
JP4798713B2 (ja) | 2007-03-26 | 2011-10-19 | ローム アンド ハース エレクトロニック マテリアルズ シーエムピー ホウルディングス インコーポレイテッド | 研磨パッドの製造方法 |
JP4954762B2 (ja) | 2007-03-27 | 2012-06-20 | 東洋ゴム工業株式会社 | ポリウレタン発泡体の製造方法 |
US9536711B2 (en) | 2007-03-30 | 2017-01-03 | Lam Research Corporation | Method and apparatus for DC voltage control on RF-powered electrode |
US8784723B2 (en) | 2007-04-01 | 2014-07-22 | Stratasys Ltd. | Method and system for three-dimensional fabrication |
US20090011679A1 (en) | 2007-04-06 | 2009-01-08 | Rajeev Bajaj | Method of removal profile modulation in cmp pads |
FR2915016B1 (fr) | 2007-04-10 | 2009-06-05 | Siemens Vdo Automotive Sas | Systeme de creation automatisee d'une interface logicielle |
US8067814B2 (en) | 2007-06-01 | 2011-11-29 | Panasonic Corporation | Semiconductor device and method of manufacturing the same |
JP5363470B2 (ja) | 2007-06-08 | 2013-12-11 | アプライド マテリアルズ インコーポレイテッド | 窓付きの薄い研磨パッド及び成形プロセス |
US7455571B1 (en) | 2007-06-20 | 2008-11-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Window polishing pad |
US20080314878A1 (en) | 2007-06-22 | 2008-12-25 | General Electric Company | Apparatus and method for controlling a machining system |
US8563619B2 (en) | 2007-06-28 | 2013-10-22 | Lam Research Corporation | Methods and arrangements for plasma processing system with tunable capacitance |
US7758764B2 (en) | 2007-06-28 | 2010-07-20 | Lam Research Corporation | Methods and apparatus for substrate processing |
US7862320B2 (en) | 2007-07-17 | 2011-01-04 | Seiko Epson Corporation | Three-dimensional object forming apparatus and method for forming three dimensional object |
US8047899B2 (en) | 2007-07-26 | 2011-11-01 | Macronix International Co., Ltd. | Pad and method for chemical mechanical polishing |
US7635290B2 (en) | 2007-08-15 | 2009-12-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Interpenetrating network for chemical mechanical polishing |
US7828634B2 (en) | 2007-08-16 | 2010-11-09 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Interconnected-multi-element-lattice polishing pad |
US7517277B2 (en) | 2007-08-16 | 2009-04-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Layered-filament lattice for chemical mechanical polishing |
CN101376234B (zh) | 2007-08-28 | 2013-05-29 | 侯家祥 | 一种研磨工具磨料颗粒有序排列的方法 |
WO2009032768A2 (en) | 2007-09-03 | 2009-03-12 | Semiquest, Inc. | Polishing pad |
EP2042649B1 (en) | 2007-09-27 | 2012-05-30 | Toyoda Gosei Co., Ltd. | Coated base fabric for airbags |
JP5078527B2 (ja) | 2007-09-28 | 2012-11-21 | 富士紡ホールディングス株式会社 | 研磨布 |
FR2921667B1 (fr) | 2007-10-01 | 2012-11-09 | Saint Gobain Abrasives Inc | Composition resinique liquide pour articles abrasifs |
JP5143528B2 (ja) | 2007-10-25 | 2013-02-13 | 株式会社クラレ | 研磨パッド |
US8491360B2 (en) | 2007-10-26 | 2013-07-23 | Innopad, Inc. | Three-dimensional network in CMP pad |
TW200941582A (en) | 2007-10-29 | 2009-10-01 | Ekc Technology Inc | Methods of post chemical mechanical polishing and wafer cleaning using amidoxime compositions |
US8388410B2 (en) | 2007-11-05 | 2013-03-05 | P.R. Hoffman Machine Products, Inc. | RFID-containing carriers used for silicon wafer quality |
JP2009129970A (ja) | 2007-11-20 | 2009-06-11 | Ebara Corp | 研磨装置及び研磨方法 |
DE102007056984A1 (de) | 2007-11-27 | 2009-05-28 | Eos Gmbh Electro Optical Systems | Verfahren zum Herstellen eines dreidimensionalen Objekts mittels Lasersintern |
JP5881948B2 (ja) | 2007-11-27 | 2016-03-09 | スリーディー システムズ インコーポレーテッド | 高透明性を有する三次元物品を製造するための光硬化型樹脂組成物 |
EP2242615A4 (en) | 2007-12-31 | 2013-10-30 | Innopad Inc | CHIMIOMECHANICAL FLOOD BUFFER |
JP5248152B2 (ja) | 2008-03-12 | 2013-07-31 | 東洋ゴム工業株式会社 | 研磨パッド |
US9180570B2 (en) | 2008-03-14 | 2015-11-10 | Nexplanar Corporation | Grooved CMP pad |
CN101977755A (zh) | 2008-03-25 | 2011-02-16 | 住友橡胶工业株式会社 | 轮胎穿孔修补装置 |
JP5226359B2 (ja) | 2008-04-02 | 2013-07-03 | 株式会社クラレ | 研磨パッド用クッションおよびそれを用いた研磨パッド |
US8292592B2 (en) | 2008-04-02 | 2012-10-23 | United Technologies Corporation | Nosecone bolt access and aerodynamic leakage baffle |
JP2011517111A (ja) | 2008-04-11 | 2011-05-26 | イノパッド,インコーポレイテッド | ボイドネットワークを有する化学機械的平坦化パッド |
US8177603B2 (en) | 2008-04-29 | 2012-05-15 | Semiquest, Inc. | Polishing pad composition |
WO2009145069A1 (ja) | 2008-05-26 | 2009-12-03 | ソニー株式会社 | 造形装置および造形方法 |
TW201005825A (en) | 2008-05-30 | 2010-02-01 | Panasonic Corp | Plasma processing apparatus and method |
US20090308739A1 (en) | 2008-06-17 | 2009-12-17 | Applied Materials, Inc. | Wafer processing deposition shielding components |
TWM347669U (en) | 2008-06-19 | 2008-12-21 | Bestac Advanced Material Co Ltd | Polishing pad and polishing device |
CN101612722A (zh) | 2008-06-25 | 2009-12-30 | 三芳化学工业股份有限公司 | 抛光垫及其制造方法 |
KR20110019442A (ko) | 2008-06-26 | 2011-02-25 | 쓰리엠 이노베이티브 프로퍼티즈 캄파니 | 다공성 요소를 구비한 연마 패드 및 이 연마 패드의 제작 방법 및 이용 방법 |
US8282866B2 (en) | 2008-06-30 | 2012-10-09 | Seiko Epson Corporation | Method and device for forming three-dimensional model, sheet material processing method, and sheet material processing device |
US20100011672A1 (en) | 2008-07-16 | 2010-01-21 | Kincaid Don H | Coated abrasive article and method of making and using the same |
JP5450622B2 (ja) | 2008-07-18 | 2014-03-26 | スリーエム イノベイティブ プロパティズ カンパニー | 浮遊要素を備えた研磨パッド、その製造方法及び使用方法 |
US20140069584A1 (en) | 2008-07-23 | 2014-03-13 | Applied Materials, Inc. | Differential counter electrode tuning in a plasma reactor with an rf-driven ceiling electrode |
US20100018648A1 (en) | 2008-07-23 | 2010-01-28 | Applied Marterials, Inc. | Workpiece support for a plasma reactor with controlled apportionment of rf power to a process kit ring |
US8734664B2 (en) | 2008-07-23 | 2014-05-27 | Applied Materials, Inc. | Method of differential counter electrode tuning in an RF plasma reactor |
US20140034239A1 (en) | 2008-07-23 | 2014-02-06 | Applied Materials, Inc. | Differential counter electrode tuning in a plasma reactor with an rf-driven workpiece support electrode |
CN101642898B (zh) | 2008-08-06 | 2011-09-14 | 财团法人工业技术研究院 | 抛光垫及其形成方法以及抛光方法 |
KR101410116B1 (ko) | 2008-08-08 | 2014-06-25 | 가부시키가이샤 구라레 | 연마 패드 및 연마 패드의 제조 방법 |
KR20100028294A (ko) | 2008-09-04 | 2010-03-12 | 주식회사 코오롱 | 연마패드 및 그의 제조방법 |
CN102165564B (zh) | 2008-09-26 | 2014-10-01 | 罗地亚管理公司 | 用于化学机械抛光的磨料组合物及其使用方法 |
US8118641B2 (en) | 2009-03-04 | 2012-02-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad having window with integral identification feature |
US20100112919A1 (en) | 2008-11-03 | 2010-05-06 | Applied Materials, Inc. | Monolithic linear polishing sheet |
US8292692B2 (en) | 2008-11-26 | 2012-10-23 | Semiquest, Inc. | Polishing pad with endpoint window and systems and method using the same |
DE102008060046A1 (de) | 2008-12-02 | 2010-06-10 | Eos Gmbh Electro Optical Systems | Verfahren zum Bereitstellen einer identifizierbaren Pulvermenge und Verfahren zur Herstellung eines Objekts |
US20100140850A1 (en) | 2008-12-04 | 2010-06-10 | Objet Geometries Ltd. | Compositions for 3D printing |
DE102008061311A1 (de) | 2008-12-11 | 2010-06-24 | Doukas Ag | Vorrichtung zum Fördern eines Gases |
CN101428404A (zh) | 2008-12-22 | 2009-05-13 | 南京航空航天大学 | 固结磨料研磨抛光垫及其制备方法 |
US8062103B2 (en) | 2008-12-23 | 2011-11-22 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate groove pattern |
US8057282B2 (en) | 2008-12-23 | 2011-11-15 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | High-rate polishing method |
JP5543494B2 (ja) | 2009-01-27 | 2014-07-09 | イノパッド,インコーポレイテッド | パターン化された構造ドメインを含む化学機械平坦化パッド |
US8053487B2 (en) | 2009-01-30 | 2011-11-08 | The United States Of America As Represented By The Secretary Of The Navy | Multifunctional acrylates used as cross-linkers in dental and biomedical self-etching bonding adhesives |
US9951054B2 (en) | 2009-04-23 | 2018-04-24 | Cabot Microelectronics Corporation | CMP porous pad with particles in a polymeric matrix |
CN201483382U (zh) | 2009-05-14 | 2010-05-26 | 贝达先进材料股份有限公司 | 研磨垫以及研磨装置 |
US9056382B2 (en) | 2009-05-27 | 2015-06-16 | Rogers Corporation | Polishing pad, composition for the manufacture thereof, and method of making and using |
JP5357639B2 (ja) | 2009-06-24 | 2013-12-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置およびプラズマ処理方法 |
WO2011001755A1 (ja) | 2009-06-29 | 2011-01-06 | Dic株式会社 | 研磨パッド用2液型ウレタン樹脂組成物、ポリウレタン研磨パッド、及びポリウレタン研磨パッドの製造方法 |
SG10201404152UA (en) | 2009-07-16 | 2014-09-26 | Cabot Microelectronics Corp | Grooved cmp polishing pad |
TWI535527B (zh) | 2009-07-20 | 2016-06-01 | 智勝科技股份有限公司 | 研磨方法、研磨墊與研磨系統 |
US8676537B2 (en) | 2009-08-07 | 2014-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Portable wireless sensor |
US8712571B2 (en) | 2009-08-07 | 2014-04-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for wireless transmission of diagnostic information |
US8889232B2 (en) | 2009-08-20 | 2014-11-18 | Electronics For Imaging, Inc. | Radiation curable ink compositions |
TWI410299B (zh) | 2009-08-24 | 2013-10-01 | Bestac Advanced Material Co Ltd | 研磨墊與其應用及其製造方法 |
AU2010295585B2 (en) | 2009-09-17 | 2015-10-08 | Sciaky, Inc. | Electron beam layer manufacturing |
EP2489699B1 (en) | 2009-10-16 | 2014-07-16 | Posco | Radiation curable resin composition, and fingerprint-resistant resin composition containing same |
US8598523B2 (en) | 2009-11-13 | 2013-12-03 | Sciaky, Inc. | Electron beam layer manufacturing using scanning electron monitored closed loop control |
JP5496630B2 (ja) | 2009-12-10 | 2014-05-21 | 東京エレクトロン株式会社 | 静電チャック装置 |
WO2011087737A2 (en) | 2009-12-22 | 2011-07-21 | 3M Innovative Properties Company | Polishing pad and method of making the same |
WO2011081109A1 (ja) | 2009-12-28 | 2011-07-07 | 日立化成工業株式会社 | Cmp用研磨液及びこれを用いた研磨方法 |
KR20120125612A (ko) | 2009-12-30 | 2012-11-16 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 상-분리 중합체 블렌드를 포함하는 폴리싱 패드 및 이의 제조 및 사용 방법 |
KR20120112662A (ko) | 2009-12-30 | 2012-10-11 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 유기 미립자 로딩된 폴리싱 패드 및 이를 제조 및 사용하는 방법 |
US9017140B2 (en) | 2010-01-13 | 2015-04-28 | Nexplanar Corporation | CMP pad with local area transparency |
US9089943B2 (en) | 2010-01-29 | 2015-07-28 | Ronald Lipson | Composite pads for buffing and polishing painted vehicle body surfaces and other applications |
DE102010007401A1 (de) | 2010-02-03 | 2011-08-04 | Kärcher Futuretech GmbH, 71364 | Vorrichtung und Verfahren zum automatisierten Formen und Abfüllen von Behältern |
SG183419A1 (en) | 2010-02-22 | 2012-09-27 | Entegris Inc | Post-cmp cleaning brush |
KR20110100080A (ko) | 2010-03-03 | 2011-09-09 | 삼성전자주식회사 | 화학적 기계적 연마 공정용 연마 패드 및 이를 포함하는 화학적 기계적 연마 설비 |
DE102010011059A1 (de) | 2010-03-11 | 2011-09-15 | Global Beam Technologies Ag | Verfahren und Vorrichtung zur Herstellung eines Bauteils |
JP5551479B2 (ja) | 2010-03-19 | 2014-07-16 | ニッタ・ハース株式会社 | 研磨装置、研磨パッドおよび研磨情報管理システム |
JP5620141B2 (ja) | 2010-04-15 | 2014-11-05 | 東洋ゴム工業株式会社 | 研磨パッド |
JP5697889B2 (ja) | 2010-04-19 | 2015-04-08 | 帝人コードレ株式会社 | 平滑加工用シート |
US20130059506A1 (en) | 2010-05-11 | 2013-03-07 | 3M Innovative Properties Company | Fixed abrasive pad with surfactant for chemical mechanical planarization |
US20120000887A1 (en) | 2010-06-30 | 2012-01-05 | Kabushiki Kaisha Toshiba | Plasma treatment apparatus and plasma treatment method |
EP2588275B1 (en) | 2010-07-02 | 2017-12-27 | 3M Innovative Properties Company | Coated abrasive articles |
US9156124B2 (en) | 2010-07-08 | 2015-10-13 | Nexplanar Corporation | Soft polishing pad for polishing a semiconductor substrate |
JP5635957B2 (ja) | 2010-09-09 | 2014-12-03 | 日本碍子株式会社 | 被研磨物の研磨方法、及び研磨パッド |
US20130172509A1 (en) | 2010-09-22 | 2013-07-04 | Interfacial Solutions Ip, Llc | Methods of Producing Microfabricated Particles for Composite Materials |
US8257545B2 (en) | 2010-09-29 | 2012-09-04 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with light stable polymeric endpoint detection window and method of polishing therewith |
US8702479B2 (en) | 2010-10-15 | 2014-04-22 | Nexplanar Corporation | Polishing pad with multi-modal distribution of pore diameters |
US9211628B2 (en) | 2011-01-26 | 2015-12-15 | Nexplanar Corporation | Polishing pad with concentric or approximately concentric polygon groove pattern |
WO2012100297A1 (en) | 2011-01-26 | 2012-08-02 | Zydex Pty Ltd | A device for making an object |
JP5893479B2 (ja) | 2011-04-21 | 2016-03-23 | 東洋ゴム工業株式会社 | 積層研磨パッド |
EP2702112B1 (en) | 2011-04-27 | 2020-05-13 | Henkel IP & Holding GmbH | Curable elastomer compositions with low temperature sealing capability |
US8968058B2 (en) | 2011-05-05 | 2015-03-03 | Nexplanar Corporation | Polishing pad with alignment feature |
US20120302148A1 (en) | 2011-05-23 | 2012-11-29 | Rajeev Bajaj | Polishing pad with homogeneous body having discrete protrusions thereon |
JP5851124B2 (ja) | 2011-06-13 | 2016-02-03 | スリーエム イノベイティブ プロパティズ カンパニー | 研磨用構造体 |
ES2441170T3 (es) | 2011-06-21 | 2014-02-03 | Agfa Graphics N.V. | Líquido eyectable curable para fabricar una matriz de impresión flexográfica |
JP2013018056A (ja) | 2011-07-07 | 2013-01-31 | Toray Ind Inc | 研磨パッド |
US10388493B2 (en) | 2011-09-16 | 2019-08-20 | Lam Research Corporation | Component of a substrate support assembly producing localized magnetic fields |
US8801949B2 (en) | 2011-09-22 | 2014-08-12 | Dow Global Technologies Llc | Method of forming open-network polishing pads |
US9108291B2 (en) | 2011-09-22 | 2015-08-18 | Dow Global Technologies Llc | Method of forming structured-open-network polishing pads |
US8894799B2 (en) | 2011-09-22 | 2014-11-25 | Dow Global Technologies Llc | Method of forming layered-open-network polishing pads |
JP2014534615A (ja) | 2011-09-26 | 2014-12-18 | インテグリス・インコーポレーテッド | Cmp後クリーニング装置および方法 |
US20130107415A1 (en) | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Electrostatic chuck |
TWI462797B (zh) | 2011-11-24 | 2014-12-01 | Univ Nat Taiwan Science Tech | Electric field assisted chemical mechanical polishing system and its method |
US9067297B2 (en) | 2011-11-29 | 2015-06-30 | Nexplanar Corporation | Polishing pad with foundation layer and polishing surface layer |
US9067298B2 (en) | 2011-11-29 | 2015-06-30 | Nexplanar Corporation | Polishing pad with grooved foundation layer and polishing surface layer |
KR102058340B1 (ko) | 2011-11-30 | 2019-12-23 | 메르크 파텐트 게엠베하 | 전기영동 디스플레이용 입자 |
US8988848B2 (en) | 2011-12-15 | 2015-03-24 | Applied Materials, Inc. | Extended and independent RF powered cathode substrate for extreme edge tunability |
KR20130084932A (ko) | 2012-01-18 | 2013-07-26 | 삼성전자주식회사 | 반도체 소자의 제조 방법 |
US8721833B2 (en) | 2012-02-05 | 2014-05-13 | Tokyo Electron Limited | Variable capacitance chamber component incorporating ferroelectric materials and methods of manufacturing and using thereof |
US8486798B1 (en) | 2012-02-05 | 2013-07-16 | Tokyo Electron Limited | Variable capacitance chamber component incorporating a semiconductor junction and methods of manufacturing and using thereof |
KR20130095430A (ko) | 2012-02-20 | 2013-08-28 | 케이피엑스케미칼 주식회사 | 연마패드 및 그 제조방법 |
EP2819822B1 (en) | 2012-03-01 | 2016-09-28 | Stratasys Ltd. | Cationic polymerizable compositions and methods of use thereof |
DE102012203639A1 (de) | 2012-03-08 | 2013-09-12 | Evonik Industries Ag | Additiv zur Einstellung der Glasübergangstemperatur von viskoelastischen Polyurethanweichschaumstoffen |
US8986585B2 (en) | 2012-03-22 | 2015-03-24 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of manufacturing chemical mechanical polishing layers having a window |
US8709114B2 (en) | 2012-03-22 | 2014-04-29 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of manufacturing chemical mechanical polishing layers |
DE102012007791A1 (de) | 2012-04-20 | 2013-10-24 | Universität Duisburg-Essen | Verfahren und Vorrichtung zur Herstellung von Bauteilen in einer Strahlschmelzanlage |
US9067299B2 (en) | 2012-04-25 | 2015-06-30 | Applied Materials, Inc. | Printed chemical mechanical polishing pad |
US9412579B2 (en) | 2012-04-26 | 2016-08-09 | Applied Materials, Inc. | Methods and apparatus for controlling substrate uniformity |
US9993873B2 (en) | 2012-05-22 | 2018-06-12 | General Electric Company | System and method for three-dimensional printing |
US9481134B2 (en) | 2012-06-08 | 2016-11-01 | Makerbot Industries, Llc | Build platform leveling with tactile feedback |
CN108977173A (zh) | 2012-06-11 | 2018-12-11 | 嘉柏微电子材料股份公司 | 用于抛光钼的组合物和方法 |
JP5994183B2 (ja) | 2012-06-29 | 2016-09-21 | 富士紡ホールディングス株式会社 | 研磨パッド及びその製造方法 |
US8778211B2 (en) | 2012-07-17 | 2014-07-15 | Cabot Microelectronics Corporation | GST CMP slurries |
US9174388B2 (en) | 2012-08-16 | 2015-11-03 | Stratasys, Inc. | Draw control for extrusion-based additive manufacturing systems |
AU2013313053B2 (en) | 2012-09-05 | 2015-04-30 | Aprecia Pharmaceuticals LLC | Three-dimensional printing system and equipment assembly |
US8888480B2 (en) | 2012-09-05 | 2014-11-18 | Aprecia Pharmaceuticals Company | Three-dimensional printing system and equipment assembly |
JP6196858B2 (ja) | 2012-09-24 | 2017-09-13 | 株式会社荏原製作所 | 研磨方法および研磨装置 |
WO2014051702A1 (en) | 2012-09-25 | 2014-04-03 | 3M Innovative Properties Company | Radiation curable ink composition |
EP2906194B1 (en) | 2012-10-11 | 2018-06-06 | Dow Corning Corporation | Aqueous silicone polyether microemulsions |
CN202825512U (zh) | 2012-10-11 | 2013-03-27 | 中芯国际集成电路制造(北京)有限公司 | 研磨垫及化学机械研磨机台 |
US20140120196A1 (en) | 2012-10-29 | 2014-05-01 | Makerbot Industries, Llc | Quick-release extruder |
JP6342912B2 (ja) | 2012-11-08 | 2018-06-13 | ディーディーエム システムズ, インコーポレイテッド | 金属構成要素の加法的製造および修復 |
CN104853901B (zh) | 2012-12-17 | 2018-06-05 | 阿卡姆股份公司 | 添加材料制造方法和设备 |
US10357435B2 (en) | 2012-12-18 | 2019-07-23 | Dentca, Inc. | Photo-curable resin compositions and method of using the same in three-dimensional printing for manufacturing artificial teeth and denture base |
US11673155B2 (en) | 2012-12-27 | 2023-06-13 | Kateeva, Inc. | Techniques for arrayed printing of a permanent layer with improved speed and accuracy |
CA2936015C (en) | 2013-01-17 | 2021-05-25 | Ehsan Toyserkani | Systems and methods for additive manufacturing of heterogeneous porous structures and structures made therefrom |
US9649742B2 (en) | 2013-01-22 | 2017-05-16 | Nexplanar Corporation | Polishing pad having polishing surface with continuous protrusions |
JP2016513146A (ja) | 2013-02-06 | 2016-05-12 | サン・ケミカル・コーポレーション | デジタル印刷インク |
BR112015017976A2 (pt) | 2013-02-12 | 2017-07-11 | Carbon3D Inc | impressão de interfase líquida contínua |
WO2014141276A2 (en) | 2013-03-14 | 2014-09-18 | Stratasys Ltd. | Polymer based molds and methods of manufacturing there of |
US9152340B2 (en) | 2013-05-28 | 2015-10-06 | Netapp, Inc. | System and method for managing and producing a dataset image across multiple storage systems |
JP5955275B2 (ja) | 2013-06-12 | 2016-07-20 | 富士フイルム株式会社 | 画像形成方法、加飾シートの製造方法、成形加工方法、加飾シート成形物の製造方法、インモールド成形品の製造方法 |
US20140370788A1 (en) | 2013-06-13 | 2014-12-18 | Cabot Microelectronics Corporation | Low surface roughness polishing pad |
US10183329B2 (en) | 2013-07-19 | 2019-01-22 | The Boeing Company | Quality control of additive manufactured parts |
US20150038066A1 (en) | 2013-07-31 | 2015-02-05 | Nexplanar Corporation | Low density polishing pad |
GB201313841D0 (en) | 2013-08-02 | 2013-09-18 | Rolls Royce Plc | Method of Manufacturing a Component |
KR101905158B1 (ko) | 2013-08-06 | 2018-10-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 국부적으로 가열되는 다-구역 기판 지지부 |
US9855698B2 (en) | 2013-08-07 | 2018-01-02 | Massachusetts Institute Of Technology | Automatic process control of additive manufacturing device |
JP5992375B2 (ja) | 2013-08-08 | 2016-09-14 | 株式会社東芝 | 静電チャック、載置プレート支持台及び静電チャックの製造方法 |
CN105453232B (zh) | 2013-08-10 | 2019-04-05 | 应用材料公司 | 具有促进受控的调节的材料组成的cmp垫 |
US20150056895A1 (en) | 2013-08-22 | 2015-02-26 | Cabot Microelectronics Corporation | Ultra high void volume polishing pad with closed pore structure |
EP3036759A4 (en) | 2013-08-22 | 2017-05-31 | Cabot Microelectronics Corporation | Polishing pad with porous interface and solid core, and related apparatus and methods |
DE102013217422A1 (de) | 2013-09-02 | 2015-03-05 | Carl Zeiss Industrielle Messtechnik Gmbh | Koordinatenmessgerät und Verfahren zur Vermessung und mindestens teilweisen Erzeugung eines Werkstücks |
CN103465155B (zh) | 2013-09-06 | 2016-05-11 | 蓝思科技股份有限公司 | 一种环氧树脂型金刚石研磨垫及其制备方法 |
US9425121B2 (en) | 2013-09-11 | 2016-08-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated fan-out structure with guiding trenches in buffer layer |
US9308620B2 (en) | 2013-09-18 | 2016-04-12 | Texas Instruments Incorporated | Permeated grooving in CMP polishing pads |
US9053908B2 (en) | 2013-09-19 | 2015-06-09 | Lam Research Corporation | Method and apparatus for controlling substrate DC-bias and ion energy and angular distribution during substrate etching |
GB201316815D0 (en) | 2013-09-23 | 2013-11-06 | Renishaw Plc | Additive manufacturing apparatus and method |
WO2015048011A1 (en) | 2013-09-25 | 2015-04-02 | 3M Innovative Properties Company | Multi-layered polishing pads |
AU2014324453B2 (en) | 2013-09-30 | 2017-08-03 | Saint-Gobain Ceramics & Plastics, Inc. | Shaped abrasive particles and methods of forming same |
WO2015055550A1 (en) | 2013-10-17 | 2015-04-23 | Luxexcel Holding B.V. | Device for printing a three-dimensional structure |
CN203542340U (zh) | 2013-10-21 | 2014-04-16 | 中芯国际集成电路制造(北京)有限公司 | 一种化学机械研磨垫 |
US8980749B1 (en) | 2013-10-24 | 2015-03-17 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method for chemical mechanical polishing silicon wafers |
US9831074B2 (en) | 2013-10-24 | 2017-11-28 | Applied Materials, Inc. | Bipolar collimator utilized in a physical vapor deposition chamber |
US10012904B2 (en) | 2013-10-30 | 2018-07-03 | Mark'Andy Inc. | Lithographic printing plate precursors and coating |
US9421666B2 (en) | 2013-11-04 | 2016-08-23 | Applied Materials, Inc. | Printed chemical mechanical polishing pad having abrasives therein |
US9481069B2 (en) | 2013-11-06 | 2016-11-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing apparatus and polishing method using the same |
US9352443B2 (en) | 2013-11-13 | 2016-05-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | Platen assembly, chemical-mechanical polisher, and method for polishing substrate |
US9850402B2 (en) | 2013-12-09 | 2017-12-26 | Cabot Microelectronics Corporation | CMP compositions and methods for selective removal of silicon nitride |
US9993907B2 (en) | 2013-12-20 | 2018-06-12 | Applied Materials, Inc. | Printed chemical mechanical polishing pad having printed window |
CN104742007B (zh) | 2013-12-30 | 2017-08-25 | 中芯国际集成电路制造(北京)有限公司 | 化学机械研磨装置和化学机械研磨方法 |
RU2016134047A (ru) | 2014-01-23 | 2018-03-05 | Рикох Компани, Лтд. | Трехмерный объект и способ для его формирования |
WO2015118552A1 (en) | 2014-02-10 | 2015-08-13 | Stratasys Ltd. | Composition and method for additive manufacturing of an object |
US20160346997A1 (en) | 2014-02-10 | 2016-12-01 | President And Fellows Of Harvard College | Three-dimensional (3d) printed composite structure and 3d printable composite ink formulation |
WO2015120430A1 (en) | 2014-02-10 | 2015-08-13 | President And Fellows Of Harvard College | 3d-printed polishing pad for chemical-mechanical planarization (cmp) |
US9472410B2 (en) | 2014-03-05 | 2016-10-18 | Applied Materials, Inc. | Pixelated capacitance controlled ESC |
JP2015174272A (ja) | 2014-03-14 | 2015-10-05 | セイコーエプソン株式会社 | 三次元造形物の製造方法、三次元造形物製造装置および三次元造形物 |
US9259820B2 (en) | 2014-03-28 | 2016-02-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with polishing layer and window |
WO2015153601A1 (en) | 2014-04-03 | 2015-10-08 | 3M Innovative Properties Company | Polishing pads and systems and methods of making and using the same |
WO2015161210A1 (en) | 2014-04-17 | 2015-10-22 | Cabot Microelectronics Corporation | Cmp polishing pad with columnar structure and methods related thereto |
US9314897B2 (en) | 2014-04-29 | 2016-04-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with endpoint detection window |
US9333620B2 (en) | 2014-04-29 | 2016-05-10 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing pad with clear endpoint detection window |
US9259821B2 (en) | 2014-06-25 | 2016-02-16 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing layer formulation with conditioning tolerance |
US20150375361A1 (en) | 2014-06-25 | 2015-12-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
JP2016023209A (ja) | 2014-07-17 | 2016-02-08 | 日立化成株式会社 | 研磨剤、研磨剤セット及び基体の研磨方法 |
US9731398B2 (en) | 2014-08-22 | 2017-08-15 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Polyurethane polishing pad |
US9826630B2 (en) | 2014-09-04 | 2017-11-21 | Nxp Usa, Inc. | Fan-out wafer level packages having preformed embedded ground plane connections and methods for the fabrication thereof |
CN107574425A (zh) | 2014-09-05 | 2018-01-12 | 应用材料公司 | 用于基板热处理的基座与预热环 |
CN106716604A (zh) | 2014-10-09 | 2017-05-24 | 应用材料公司 | 具有内部通道的化学机械研磨垫 |
US9776361B2 (en) | 2014-10-17 | 2017-10-03 | Applied Materials, Inc. | Polishing articles and integrated system and methods for manufacturing chemical mechanical polishing articles |
US10399201B2 (en) | 2014-10-17 | 2019-09-03 | Applied Materials, Inc. | Advanced polishing pads having compositional gradients by use of an additive manufacturing process |
CN107078048B (zh) | 2014-10-17 | 2021-08-13 | 应用材料公司 | 使用加成制造工艺的具复合材料特性的cmp衬垫建构 |
TWI689406B (zh) | 2014-10-17 | 2020-04-01 | 美商應用材料股份有限公司 | 研磨墊及製造其之方法 |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
US10875145B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Polishing pads produced by an additive manufacturing process |
US10821573B2 (en) | 2014-10-17 | 2020-11-03 | Applied Materials, Inc. | Polishing pads produced by an additive manufacturing process |
JP6422325B2 (ja) | 2014-12-15 | 2018-11-14 | 花王株式会社 | 半導体基板用研磨液組成物 |
US10086500B2 (en) | 2014-12-18 | 2018-10-02 | Applied Materials, Inc. | Method of manufacturing a UV curable CMP polishing pad |
JP6452449B2 (ja) | 2015-01-06 | 2019-01-16 | 東京エレクトロン株式会社 | 載置台及び基板処理装置 |
US20170263478A1 (en) | 2015-01-16 | 2017-09-14 | Lam Research Corporation | Detection System for Tunable/Replaceable Edge Coupling Ring |
US10946495B2 (en) | 2015-01-30 | 2021-03-16 | Cmc Materials, Inc. | Low density polishing pad |
US9505952B2 (en) | 2015-03-05 | 2016-11-29 | Cabot Microelectronics Corporation | Polishing composition containing ceria abrasive |
US9475168B2 (en) | 2015-03-26 | 2016-10-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad window |
WO2016173668A1 (en) | 2015-04-30 | 2016-11-03 | Hewlett-Packard Development Company, L.P. | Misalignment detection for a 3d printing device |
US10017857B2 (en) | 2015-05-02 | 2018-07-10 | Applied Materials, Inc. | Method and apparatus for controlling plasma near the edge of a substrate |
CN106206409B (zh) | 2015-05-08 | 2019-05-07 | 华邦电子股份有限公司 | 堆叠电子装置及其制造方法 |
CN205703794U (zh) | 2015-06-29 | 2016-11-23 | 智胜科技股份有限公司 | 研磨垫的研磨层 |
US10163610B2 (en) | 2015-07-13 | 2018-12-25 | Lam Research Corporation | Extreme edge sheath and wafer profile tuning through edge-localized ion trajectory control and plasma operation |
US9761459B2 (en) | 2015-08-05 | 2017-09-12 | Lam Research Corporation | Systems and methods for reverse pulsing |
US9620376B2 (en) | 2015-08-19 | 2017-04-11 | Lam Research Corporation | Self limiting lateral atomic layer etch |
WO2017035007A1 (en) | 2015-08-21 | 2017-03-02 | Voxel8, Inc. | Calibration and alignment of additive manufacturing deposition heads |
US9984858B2 (en) | 2015-09-04 | 2018-05-29 | Lam Research Corporation | ALE smoothness: in and outside semiconductor industry |
CN108025496A (zh) | 2015-09-16 | 2018-05-11 | 应用材料公司 | 用于增材制造的可选择性打开的支撑工作台 |
JP6584895B2 (ja) | 2015-09-30 | 2019-10-02 | 富士紡ホールディングス株式会社 | 研磨パッド |
US10192751B2 (en) | 2015-10-15 | 2019-01-29 | Lam Research Corporation | Systems and methods for ultrahigh selective nitride etch |
US10124492B2 (en) | 2015-10-22 | 2018-11-13 | Lam Research Corporation | Automated replacement of consumable parts using end effectors interfacing with plasma processing system |
US9881820B2 (en) | 2015-10-22 | 2018-01-30 | Lam Research Corporation | Front opening ring pod |
US10062599B2 (en) | 2015-10-22 | 2018-08-28 | Lam Research Corporation | Automated replacement of consumable parts using interfacing chambers |
US20170115657A1 (en) | 2015-10-22 | 2017-04-27 | Lam Research Corporation | Systems for Removing and Replacing Consumable Parts from a Semiconductor Process Module in Situ |
EP3369791A1 (en) | 2015-10-30 | 2018-09-05 | Konica Minolta, Inc. | Active light ray-curable inkjet ink composition and inkjet recording method |
CN113103145B (zh) | 2015-10-30 | 2023-04-11 | 应用材料公司 | 形成具有期望ζ电位的抛光制品的设备与方法 |
GB201519187D0 (en) | 2015-10-30 | 2015-12-16 | Knauf Insulation Ltd | Improved binder compositions and uses thereof |
US10593574B2 (en) | 2015-11-06 | 2020-03-17 | Applied Materials, Inc. | Techniques for combining CMP process tracking data with 3D printed CMP consumables |
US10229769B2 (en) | 2015-11-20 | 2019-03-12 | Xerox Corporation | Three phase immiscible polymer-metal blends for high conductivty composites |
US10189143B2 (en) | 2015-11-30 | 2019-01-29 | Taiwan Semiconductor Manufacturing Company Limited | Polishing pad, method for manufacturing polishing pad, and polishing method |
US9601319B1 (en) | 2016-01-07 | 2017-03-21 | Lam Research Corporation | Systems and methods for eliminating flourine residue in a substrate processing chamber using a plasma-based process |
US10685862B2 (en) | 2016-01-22 | 2020-06-16 | Applied Materials, Inc. | Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device |
US9956314B2 (en) | 2016-01-26 | 2018-05-01 | Modern Ideas LLC | Adhesive for use with bone and bone-like structures |
US10699878B2 (en) | 2016-02-12 | 2020-06-30 | Lam Research Corporation | Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring |
US10651015B2 (en) | 2016-02-12 | 2020-05-12 | Lam Research Corporation | Variable depth edge ring for etch uniformity control |
US10438833B2 (en) | 2016-02-16 | 2019-10-08 | Lam Research Corporation | Wafer lift ring system for wafer transfer |
US9966231B2 (en) | 2016-02-29 | 2018-05-08 | Lam Research Corporation | Direct current pulsing plasma systems |
CN109075057B (zh) | 2016-03-09 | 2023-10-20 | 应用材料公司 | 垫结构及制造方法 |
SG11201806820UA (en) | 2016-03-09 | 2018-09-27 | Applied Materials Inc | Correction of fabricated shapes in additive manufacturing |
WO2017165216A1 (en) | 2016-03-24 | 2017-09-28 | Applied Materials, Inc. | Textured small pad for chemical mechanical polishing |
US10269566B2 (en) | 2016-04-29 | 2019-04-23 | Lam Research Corporation | Etching substrates using ale and selective deposition |
KR20170127724A (ko) | 2016-05-12 | 2017-11-22 | 삼성전자주식회사 | 플라즈마 처리 장치 |
US10340171B2 (en) | 2016-05-18 | 2019-07-02 | Lam Research Corporation | Permanent secondary erosion containment for electrostatic chuck bonds |
US9852889B1 (en) | 2016-06-22 | 2017-12-26 | Lam Research Corporation | Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring |
US10283330B2 (en) | 2016-07-25 | 2019-05-07 | Lam Research Corporation | Systems and methods for achieving a pre-determined factor associated with an edge region within a plasma chamber by synchronizing main and edge RF generators |
JP6791680B2 (ja) | 2016-08-09 | 2020-11-25 | 株式会社フジミインコーポレーテッド | 表面処理組成物およびこれを用いた洗浄方法 |
US20180100073A1 (en) * | 2016-10-11 | 2018-04-12 | Xerox Corporation | Ink composition for use in 3d printing |
US10259956B2 (en) * | 2016-10-11 | 2019-04-16 | Xerox Corporation | Curable ink composition |
US10930535B2 (en) | 2016-12-02 | 2021-02-23 | Applied Materials, Inc. | RFID part authentication and tracking of processing components |
KR102683416B1 (ko) | 2017-02-15 | 2024-07-23 | 삼성전자주식회사 | 화학 기계적 연마 장치 |
US20180323042A1 (en) | 2017-05-02 | 2018-11-08 | Applied Materials, Inc. | Method to modulate the wafer edge sheath in a plasma processing chamber |
US10967482B2 (en) | 2017-05-25 | 2021-04-06 | Applied Materials, Inc. | Fabrication of polishing pad by additive manufacturing onto mold |
US11084143B2 (en) | 2017-05-25 | 2021-08-10 | Applied Materials, Inc. | Correction of fabricated shapes in additive manufacturing using modified edge |
CA3064314A1 (en) * | 2017-06-02 | 2018-12-06 | Arkema France | Curable compositions and uses thereof |
JP6826955B2 (ja) | 2017-06-14 | 2021-02-10 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP6894015B2 (ja) | 2017-06-21 | 2021-06-23 | カーボン,インコーポレイテッド | 積層造形の方法 |
US10763081B2 (en) | 2017-07-10 | 2020-09-01 | Applied Materials, Inc. | Apparatus and methods for manipulating radio frequency power at an edge ring in plasma process device |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
US11072050B2 (en) | 2017-08-04 | 2021-07-27 | Applied Materials, Inc. | Polishing pad with window and manufacturing methods thereof |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
JP7033907B2 (ja) | 2017-12-21 | 2022-03-11 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマエッチング方法 |
WO2019143473A1 (en) | 2018-01-22 | 2019-07-25 | Applied Materials, Inc. | Processing with powered edge ring |
WO2019152222A1 (en) | 2018-02-05 | 2019-08-08 | Applied Materials, Inc. | Piezo-electric end-pointing for 3d printed cmp pads |
WO2019190676A1 (en) | 2018-03-30 | 2019-10-03 | Applied Materials, Inc. | Integrating 3d printing into multi-process fabrication schemes |
KR20200140931A (ko) | 2018-05-07 | 2020-12-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 친수성 및 제타 전위 조정가능한 화학적 기계적 연마 패드들 |
US10790123B2 (en) | 2018-05-28 | 2020-09-29 | Applied Materials, Inc. | Process kit with adjustable tuning ring for edge uniformity control |
US10347500B1 (en) | 2018-06-04 | 2019-07-09 | Applied Materials, Inc. | Device fabrication via pulsed plasma |
US10847347B2 (en) | 2018-08-23 | 2020-11-24 | Applied Materials, Inc. | Edge ring assembly for a substrate support in a plasma processing chamber |
KR20210042171A (ko) | 2018-09-04 | 2021-04-16 | 어플라이드 머티어리얼스, 인코포레이티드 | 진보한 폴리싱 패드들을 위한 제형들 |
CN112913140B (zh) | 2018-11-09 | 2024-09-03 | 应用材料公司 | 用于处理腔室的射频滤波器系统 |
US11289310B2 (en) | 2018-11-21 | 2022-03-29 | Applied Materials, Inc. | Circuits for edge ring control in shaped DC pulsed plasma process device |
WO2020154310A1 (en) | 2019-01-22 | 2020-07-30 | Applied Materials, Inc. | Feedback loop for controlling a pulsed voltage waveform |
US20200230781A1 (en) | 2019-01-23 | 2020-07-23 | Applied Materials, Inc. | Polishing pads formed using an additive manufacturing process and methods related thereto |
KR102655348B1 (ko) | 2019-03-19 | 2024-04-04 | 어플라이드 머티어리얼스, 인코포레이티드 | 소수성 및 아이스포빅 코팅 |
US11851570B2 (en) | 2019-04-12 | 2023-12-26 | Applied Materials, Inc. | Anionic polishing pads formed by printing processes |
-
2019
- 2019-08-01 KR KR1020217009763A patent/KR20210042171A/ko not_active Application Discontinuation
- 2019-08-01 CN CN201980058001.2A patent/CN112654655A/zh active Pending
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- 2019-08-16 TW TW108129222A patent/TWI827650B/zh active
-
2023
- 2023-05-25 US US18/202,013 patent/US20230294239A1/en active Pending
- 2023-06-16 JP JP2023099005A patent/JP2023138951A/ja active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017533585A (ja) * | 2014-10-17 | 2017-11-09 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 付加製造プロセスにより製作される研磨パッド |
JP2018533487A (ja) * | 2015-10-16 | 2018-11-15 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 付加製造プロセスを用いて高機能研磨パッドを形成する方法及び装置 |
US20170203408A1 (en) * | 2016-01-19 | 2017-07-20 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
US20170203406A1 (en) * | 2016-01-19 | 2017-07-20 | Applied Materials, Inc. | Porous chemical mechanical polishing pads |
US20180100074A1 (en) * | 2016-10-11 | 2018-04-12 | Xerox Corporation | Ink composition for use in 3d printing |
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