CN107574425A - 用于基板热处理的基座与预热环 - Google Patents

用于基板热处理的基座与预热环 Download PDF

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CN107574425A
CN107574425A CN201710619908.4A CN201710619908A CN107574425A CN 107574425 A CN107574425 A CN 107574425A CN 201710619908 A CN201710619908 A CN 201710619908A CN 107574425 A CN107574425 A CN 107574425A
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outer periphery
pedestal
periphery edge
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刘树坤
穆罕默德·图格鲁利·萨米尔
阿伦·米勒
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Applied Materials Inc
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Abstract

本公开内容的实施方式提供用于基板处理腔室的改良基座。在一个实施方式中，基座包括：外侧周边边缘，围绕凹处，其中凹处具有凹形表面，凹形表面从外侧周边边缘凹陷；及成角度的支撑表面，设置于外侧周边边缘和凹处之间，其中成角度的支撑表面相关于外侧周边边缘的水平表面而倾斜。

Description

用于基板热处理的基座与预热环
本申请是申请日为2015年8月14日、申请号为201580047554.X、发明名称为“用于基板热处理的基座与预热环”的发明专利申请的分案申请。
技术领域
本公开内容的实施方式一般地涉及用于在热沉积腔室中使用的基座，诸如在半导体制造工艺中使用的外延沉积腔室。
背景技术
用于制造半导体器件的现代工艺需要精确调整许多的工艺参数，以达到高水平的器件性能、产量及产品品质。对于包含在基板上以外延薄膜生长而形成半导体层的工艺而言，许多的工艺参数必须被仔细地控制，包含基板温度、前驱物材料的压力和流率、形成时间及在环绕基板的加热元件之间的功率分配，和除此之外的工艺参数。
对于增加器件产量、和器件数目/基板的需求持续存在。使用具有用于器件形成的大表面积(surface area)的基板增加了器件数目/基板。然而，基板的表面积的增加产生了各种工艺参数的问题。举例来说，已发现仅按比例增加腔室组件以容纳较大的基板尺寸并不足以达到所期望的结果。
因此，存在对于在具有较大可用表面积的基板上提供均匀沉积半导体层的改良EPI工艺腔室和组件的需求。
发明内容
在一个实施方式中，提供一种用于在处理腔室中使用的基座。基座包括：外侧周边(peripheral)边缘，围绕凹处(pocket)，其中凹处具有凹形表面，凹形表面从外侧周边边缘凹陷；及成角度的(angled)支撑表面，设置于外侧周边边缘和凹处之间，其中成角度的支撑表面相关于外侧周边边缘的水平表面而倾斜。
在另一实施方式中，提供一种用于在处理腔室中使用的预热环。预热环包括：圆形主体，包括外侧周边边缘，外侧周边边缘围绕开口，其中外侧周边边缘包括顶表面和底表面，该底表面平行于顶表面；及凹部，形成于外侧周边边缘的底表面中，其中顶表面从圆形主体的边缘向内地延伸第一径向宽度至开口，底表面从圆形主体的边缘向内地延伸第二径向宽度至凹部，且第一径向宽度大于第二径向宽度，其中圆形主体包括第一厚度和第二厚度，且第二厚度为第一厚度的约75％至约86％。
在又一实施方式中，提供一种处理基板的处理腔室。处理腔室包括：可旋转基座，设置于处理腔室内，基座包括：第一外侧周边边缘，第一外侧周边边缘围绕凹处，其中凹处具有凹形表面，凹形表面从第一外侧周边边缘凹陷；及成角度的支撑表面，设置于第一外侧周边边缘和凹处之间，其中成角度的支撑表面相关于第一外侧周边边缘的水平表面而倾斜；及下圆底，相对地设置于基座的下方；上圆顶，相对地设置于基座的上方，上圆顶与下圆底相对，且上圆顶和下圆底大体界定处理腔室的内部容积；及预热环，设置于处理腔室的内侧周缘(periphery)内并绕基座的周边。
附图说明
以上简要概述的本公开内容的上述特征可以被详细理解的方式、以及本公开内容的更特定描述，可以通过参照实施方式获得，实施方式的一些实施方式绘示于附图中。然而，应当注意，附图仅绘示本公开内容的典型实施方式，因而不应被视为对本公开内容的范围的限制，因为本公开内容可允许其它等同有效的实施方式。
图1为依据本公开内容的一个实施方式的基座的示意性等距图。
图2为图1的基座的截面图。
图3为图2的基座的放大截面图。
图4为依据本公开内容的一个实施方式的预热环的示意性等距图。
图5为图4的预热环的截面图。
图6为图5的预热环的放大截面图。
图7为可用以实施本公开内容的实施方式的处理腔室的示意性截面图。
具体实施方式
图1为依据于此所述的实施方式的基座100的示意性等距图。基座100包含外侧周边边缘105，外侧周边边缘105围绕凹陷凹处110，于凹陷凹处110处可支撑基板(未图示)。基座100可被置于半导体处理腔室中，诸如化学气相沉积腔室或外延沉积腔室。可用以实施本公开内容的实施方式的一个示例的腔室图示于图7中。凹陷凹处110经调整尺寸以接收基板的大部分。凹陷凹处110可包含表面200，表面200从外侧周边边缘105而凹陷。凹处110因此避免基板于处理期间滑出。基座100可为由陶瓷材料或石墨材料所制成的环形板，石墨材料诸如可为以碳化硅涂布的石墨。升降销孔103示出于凹处110中。
图2为图1的基座100的侧截面图。基座100包含从基座100的外径测量的第一尺寸D1。基座100的外径小于半导体处理腔室(例如图7的处理腔室)的内侧周缘。第一尺寸D1大于凹处110的第二尺寸D2，凹处110的第二尺寸D2从外侧周边边缘105的内径测量。基座100可包含突出部分300(见图3)，突出部分300设置在表面200的外径和外侧周边边缘105的内径之间。凹处110也包含从突出部分300的内径测量的第三尺寸D3。第三尺寸D3小于第二尺寸D2。尺寸D1、D2及D3的每一者可为基座100的直径。在一个实施方式中，第三尺寸D3为第二尺寸D2的约90％至约97％。第二尺寸D2为第一尺寸D1的约75％至约90％。对于450mm的基板而言，第一尺寸D1可为约500mm至约560mm，例如520mm至约540mm，举例来说约535mm。在一个实施方式中，凹处110(即，尺寸D2和/或尺寸D3)可经调整尺寸以接收450mm的基板。
表面200的深度D4从外侧周边边缘105的顶表面107可为约1mm至约2mm。在一些实施方式中，表面200稍微成凹形，以防止在处理期间下垂的基板的下侧部分接触基座。表面200可包含约34,000mm至约35,000mm的凹处表面半径(球半径)，例如约34,200mm至约34,300mm。凹处表面半径可用以防止于处理期间，即使当基板弯曲时，基板表面和表面200的一部分之间的接触。凹陷凹处110的高度和/或凹处表面半径基于由基座100所支撑的基板的厚度是可变化的。
图3为示出图2的基座的一部分的放大截面图。外侧周边边缘105从基座的上表面突出。在一些实施方式中，成角度的支撑表面302，作为用于基板的支撑表面的一部分，设置于凹处110和外侧周边边缘105之间。特别地，成角度的支撑表面302介于外侧周边边缘105(即，尺寸D2)和突出部分300的内径(即，尺寸D3)之间。当基板的边缘由成角度的支撑表面302支撑时，成角度的支撑表面302可减少基板和基座100之间的接触表面积。在一个实施方式中，外侧周边边缘105的顶表面107以尺寸D5高于成角度的支撑表面302，尺寸D5可小于约3mm，例如约0.6mm至约1.2mm，举例来说约0.8mm。
在一个实施方式中，圆角半径“R1”形成于外侧周边边缘105和成角度的支撑表面302相会的界面处。圆角半径R1可为连续弯曲的凹形。在各个实施方式中，圆角半径“R1”的范围在约0.1英寸与约0.5英寸之间，例如在约0.15英寸与约0.2英寸之间。
成角度的支撑表面302可相关于水平表面(例如，外侧周边边缘105的顶表面107)而倾斜。成角度的支撑表面302可倾斜约1度至约10度之间，例如约2度至约6度之间。改变成角度的支撑表面302的坡度或尺寸可控制在基板的底部和凹处110的表面200之间的间隙的尺寸，或基板的底部相对于凹处110的高度。在图3中所示的实施方式中，截面图示出成角度的支撑表面302以一高度从圆角半径R1朝表面200径向向内延伸，该高度作为尺寸D6示出，尺寸D6可低于约1mm。成角度的支撑表面302终止于表面200的外径处。表面200可从突出部分300的底部凹陷以所示为尺寸D7的高度。尺寸D7可大于尺寸D6。在一个实施方式中，尺寸D6为尺寸D7的约65％至约85％，举例来说约尺寸D7的77％。在其它实施方式中，尺寸D7比尺寸D6增加约30％。在一个实例中，尺寸D6为约0.05mm至约0.15mm，举例来说约0.1mm。在一些实施方式中，底表面107可被粗糙化成约5Ra至约7Ra。
具有于此所述的特征(例如，成角度的支撑表面和凹处表面半径)的基座100已被测试，且结果显示在基板和表面200之间的无接触下基板和表面200之间的良好热传递。突出部分300的使用提供以基板和成角度的支撑表面302之间的最小接触的热传递。
图4为依据于此所述的实施方式的预热环400的示意性等距图。预热环400可置于半导体处理腔室中，诸如化学气相沉积腔室或外延沉积腔室中。特别地，当基座位于处理位置时，预热环400经构造以绕基座(例如，图1-3的基座100)的周边而设置。可用以实施本公开内容的实施方式的一个示例的处理腔室图示于图7中。预热环400包含外侧周边边缘405，外侧周边边缘405围绕开口410，基座(例如图1-3的基座100)可被安置于开口410处。预热环400包含由陶瓷材料或碳材料所制成的圆形主体，碳材料诸如以碳化硅涂布的石墨。
图5为图4的预热环400的侧截面图。预热环400包含从外侧周边边缘405的外径测量的第一尺寸D1，及从外侧周边边缘405的内径测量的第二尺寸D2。外侧周边边缘的外径具有周缘，该周缘小于半导体处理腔室(例如图7的处理腔室)的周缘。第二尺寸D2可实质等于开口410的直径。第一尺寸D1小于半导体处理腔室(例如图7的处理腔室)的内侧周缘。预热环400也包含形成在外侧周边边缘405的底表面(例如，底表面409)中的凹部415。凹部415包含从凹部145的外径测量的第三尺寸D3。第三尺寸D3小于第一尺寸D1，但大于第二尺寸D2。尺寸D1、D2及D3的每一者可为预热环400的直径。凹部415可被用以接触使用中的基座(未图示)，且第三尺寸D3可实质等于或稍大于基座的外径(例如图2的尺寸D1)。
在一个实施方式中，尺寸D3为第一尺寸D1的约90％至约98％，举例来说第一尺寸D1的约94％至约96％，且第二尺寸D2为第一尺寸D1的约80％至约90％，举例来说第一尺寸D1的约84％至约87％。对于450mm的基板而言，第一尺寸D1可为约605mm至约630mm，例如约615mm至约625mm，举例来说620mm。在一个实施方式中，预热环400可经调整尺寸以被利用于450mm基板的处理中。
图6为图5的预热环400的放大截面图。预热环400，为圆形主体，可包含所示为尺寸D4的第一厚度(即，外侧厚度)及所示为尺寸D5的第二厚度(即，内侧厚度)。尺寸D4大于尺寸D5。在一个实施方式中，尺寸D5为尺寸D4的约75％至约86％，举例来说尺寸D4的81％。预热环400的外侧周边边缘405包含实质平行(即，低于约1.0mm的平行度)的顶表面407及底表面409。顶表面407从预热环400的边缘向内地延伸第一径向宽度至开口410，而底表面409从预热环400的边缘向内地延伸第二径向宽度至凹部415。第一径向宽度大于第二径向宽度。在一个实施方式中，第一径向宽度为约5mm至约20mm，例如约8mm至约16mm，举例来说约10mm。在一些实施方式中，至少底表面409包含低于约1.0mm的平坦度。圆角半径“R”形成于凹部415的转角处。倒角“R’”也可形成在预热环400的转角上，例如开口410的外侧边缘和外侧周边边缘405的内侧边缘相会的界面处。在一个实施方式中，R和R’的一者或两者可为低于约0.5mm。在一个实施方式中，尺寸D5为约6.00mm。
外侧周边边缘405的径向宽度用以吸收能量源(例如示出于图7中的灯735)的热量。前驱物气体通常经构造以实质平行顶表面407的方式流动越过外侧周边边缘405，且气体在抵达置于在处理腔室中的基座(例如第1-3图的基座100)上的基板前被预热。预热环400已被测试且结果显示前驱物气体的流动可在预热环400的顶表面407上且遍布预热环400的顶表面407建立层流边界层。特别地，边界层，改善从预热环至前驱物气体的热传导，在前驱物气体抵达基板之前经完全地发展。因此，前驱物气体在进入处理腔室之前，获得足够的热量，此转而增加了基板的产出和沉积的均匀性。
图7为可用以实施本公开内容的实施方式的示例的处理腔室700的示意性截面图。处理腔室700经构造以处理300mm的基板或更大者，举例来说450mm的基板。虽然处理腔室700被描述于下以用以实施于此所述的各种实施方式，来自不同制造商的其它半导体处理腔室也可用以实施于此公开内容中所述的实施方式。处理腔室700可被调适成用以执行化学气相沉积，诸如外延沉积工艺。
处理腔室700示例地包含腔室主体702、支援系统704及控制器706。腔室主体702具有界定内部处理区域712的上圆顶726、侧壁708和底壁710。用以支撑基板的基座714(例如图1至图3中所示的基座100)可设置于内部处理区域712中。基座714被旋转且被支撑柱716支撑，支撑柱716与支撑臂718连接，支撑臂718从轴720延伸。于操作期间，设置在基座714上的基板可由基板举升臂722通过升降销724而被抬升。
上圆顶726设置于基座714的上方，且下圆底728设置于基座714的下方。沉积工艺一般发生于基板的上表面上，该基板设置在内部处理区域712内的基座714上。
上衬垫730设置于上圆顶726的下方且经调适以防止非所欲的沉积于腔室组件上，例如绕中央视窗部分733的周缘与上圆顶726的中央视窗部分733耦接的基底环729或周边凸缘731上。上衬垫730邻近预热环732而设置。当基座714位于处理位置中时，预热环732经构造以绕基座714的周边而设置。预热环732的径向宽度延伸成在基座714和环支撑件734之间的一角度，以防止或最小化来自灯735的热干扰或光干扰噪音至基板的器件侧，同时提供用于工艺气体在预热区上流动的预热区。预热环732可移除地设置于环支撑件734上，环支撑件734支撑并定位预热环732，使得工艺气体以层流方式(例如，以如流动路径770所指的大体径向向内方向)跨基座714的上表面而流进内部处理区域712。环支撑件734可为设置在处理腔室内的衬垫。
基底环729可具有经调整尺寸以适配于处理腔室700的内周缘的环主体。环主体可具有大体的圆形形状。基底环729的内侧周缘经构造以接收环支撑件734。在一个实例中，环支撑件734经调整尺寸以嵌套于基底环729的内侧周缘内或由基底环729的内侧周缘所环绕。
处理腔室700包含经调适以提供热能给设置于处理腔室700内的组件的多个加热源，例如灯735。举例来说，灯735可经调适以提供热能给基板和预热环732，导致工艺气体热分解于基板上，以在基板上形成一或多层。在一些实施方式中，辐射加热灯735的阵列可被替代地或额外地设置于上圆顶726的上方。下圆底728可由诸如石英之类的光学透明的材料所形成，以帮助热辐射从下圆底728通过。于操作期间预热环732的温度可为约100摄氏度至约800摄氏度。于处理期间，基座714可被加热至1000摄氏度且预热环732可被加热至约650-750摄氏度。当工艺气体通过工艺气体入口740而流进处理腔室700中时，经加热的预热环732活化工艺气体，工艺气体入口740通过基底环729而形成。工艺气体通过工艺气体出口742而离开处理腔室700，工艺气体出口742相对于工艺气体入口740设置。因为在处理期间，工艺气体入口740、基座714和工艺气体出口742处于约相同的高度，工艺气体沿着流动路径770跨基板(未图示)的上表面，以大体平坦、层流的方式流至工艺气体出口742。进一步的径向均匀性可由通过基座714旋转基板而提供。
虽然示出一个工艺气体入口740，工艺气体入口740可包含两或更多个气体入口，用以传送两或更多个独立的气体流。工艺气体入口740可经构造以提供具有不同参数(诸如速度、密度或成分)的独立的气体流。在调适有多个工艺气体入口的一个实施方式中，工艺气体入口740可沿着基底环729的一部分以实质线性布置的方式分布，以提供足够宽的气体流，以实质地覆盖基板的直径。举例来说，工艺气体入口740可以至少一个线性群组的方式经布置成可能提供大体对应基板的直径的气体流的程度。
处理腔室700可包含通过基底环729而形成的净化气体入口750。净化气体入口750可以一高度设置于工艺气体入口740的下方。在一个实例中，预热环732设置于工艺气体入口740和净化气体入口750之间。净化气体入口250可以大于在处理腔室700的上面部分(即，基座714上方的处理区域)中的压力气体的压力，提供诸如氢的惰性净化气体从净化气体源752流至处理腔室700的下面部分754(即，基座714下方的处理区域)。在一个实施方式中，净化气体入口750经构造而以大体径向向内的方向引导净化气体。在薄膜沉积工艺期间，基座714可位于使得净化气体以层流方式沿流动路径772向下并环绕地流动越过基座714的背侧的位置。净化气体的流动被认为可防止或实质避免工艺气体流进下面部分754，或可减少进入下面部分754的工艺气体的扩散。净化气体离开下面部分754并通过工艺气体出口742而被排出处理腔室700，工艺气体出口742位于相对净化气体入口750的侧处。
支援系统704可包含用以执行和监控预定工艺的组件，预定工艺例如在处理腔室700中的薄膜的生成。控制器706耦接至支援系统704且经调适以控制处理腔室700和支援系统704。
本公开内容的优点包含具有改良的预热环，预热环具有围绕开口的外侧周边边缘。外侧周边边缘具有径向宽度，径向宽度允许在前驱物气体抵达基板之前，前驱物气体的流动在预热环的顶表面上完全地发展成层流边界层。边界层改善从预热环至前驱物气体的热传递。因此，前驱物气体在进入处理腔室前获得足够的热量，此转而增加基板产出和沉积均匀性。预热环的开口也允许改良的基座被设置于开口中。基座具有由成角度的支撑表面所环绕的凹陷凹处，此减少在基板和基座之间的接触表面积。凹陷凹处具有轻微凹形的表面，以防止即便当基板弯曲时，基板和凹陷凹处之间的接触。
虽然前述针对本公开内容的实施方式，但在不脱离本公开内容的基本范围的条件下可设计本公开内容的其它的或进一步的实施方式。

Claims (15)

1.一种用于基板处理腔室的基座，包括：
外侧周边边缘，所述外侧周边边缘围绕凹处，其中所述凹形表面从所述外侧周边边缘的顶表面凹陷，所述凹处具有凹形表面；以及
基板支撑表面，所述基板支撑表面设置于所述外侧周边边缘和所述凹处之间，其中所述基板支撑表面相关于所述外侧周边边缘的所述顶表面而倾斜。
2.如权利要求1所述的基座，其中所述外侧周边边缘的所述顶表面高于所述基板支撑表面约0.6mm至约1.2mm的尺寸。
3.如权利要求1所述的基座，进一步包括：
突出部分，所述突出部分设置于所述凹形表面的外径和所述外侧周边边缘的内径之间。
4.如权利要求3所述的基座，其中所述突出部分的内径为所述外侧周边边缘的所述内径的90％至97％。
5.如权利要求4所述的基座，所述外侧周边边缘的所述内径为所述外侧周边边缘的外径的75％至90％。
6.如权利要求1所述的基座，所述外侧周边边缘的顶表面高于所述基板支撑表面少于约3mm的尺寸。
7.如权利要求1所述的基座，进一步包括：
圆角半径，所述圆角半径形成在所述外侧周边边缘和所述基板支撑表面之间的界面处。
8.如权利要求7所述的基座，其中所述基板支撑表面相关于所述外侧周边边缘的所述顶表面倾斜约1度至约10度。
9.如权利要求7所述的基座，其中所述基板支撑表面从所述圆角半径朝所述凹形表面径向向内地延伸。
10.如权利要求9所述的基座，其中所述基板支撑表面终止于所述凹形表面的外径处。
11.一种用于处理基板的基板处理腔室，包括：
可旋转的基座，所述可旋转的基座设置于所述基板腔室内，其中所述基座包括：
第一外侧周边边缘，所述第一外侧周边边缘围绕凹处，其中所述凹处具有凹形表面，所述凹形表面从所述第一外侧周边边缘的顶表面凹陷；和
基板支撑表面，所述基板支撑表面设置于所述第一外侧周边边缘和所述凹处之间，其中所述基板支撑表面相关于所述第一外侧周边边缘的所述顶表面而倾斜约1度至约10度；
下圆底，所述下圆底设置于所述基座的下方；
上圆顶，所述上圆顶设置于所述基座的上方，所述上圆顶与所述下圆底相对，并且所述上圆顶和所述下圆底大体界定所述处理腔室的内部容积；以及
预热环，所述预热环设置于所述处理腔室的内侧周缘内并绕所述基座的周边。
12.如权利要求11所述的基板处理腔室，其中所述预热环包括：
主体，所述主体包括第二外侧周边边缘，所述第二外侧周边边缘围绕开口，其中所述第二外侧周边边缘包括顶表面和底表面，所述底表面平行于所述顶表面；和凹部，所述凹部形成于所述第二外侧周边边缘的所述底表面中，其中所述顶表面从所述主体的边缘延伸第一径向距离至所述开口，所述底表面从所述圆形主体的所述边缘延伸第二径向距离至所述凹部，且所述第一径向距离大于所述第二径向距离。
13.如权利要求11所述的基板处理腔室，其中所述第一外侧周边边缘的内径为所述第一外侧周边边缘的外径的约75％至约90％。
14.如权利要求11所述的基板处理腔室，其中所述第一外侧周边边缘具有第一厚度的第一部分和第二厚度的第二部分，所述第二部分在所述第一部分内部，所述第二厚度为所述第一厚度的约75％至约86％。
15.如权利要求11所述的基板处理腔室，其中所述预热环的第二外侧周边边缘的内径为所述第二外侧周边边缘的外径的约80％至约90％。
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