JP2015096489A - 有機アミノシラン前駆体およびこれを含む膜の堆積方法 - Google Patents
有機アミノシラン前駆体およびこれを含む膜の堆積方法 Download PDFInfo
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- JP2015096489A JP2015096489A JP2014190075A JP2014190075A JP2015096489A JP 2015096489 A JP2015096489 A JP 2015096489A JP 2014190075 A JP2014190075 A JP 2014190075A JP 2014190075 A JP2014190075 A JP 2014190075A JP 2015096489 A JP2015096489 A JP 2015096489A
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- disilabutane
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- H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
- H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
- H10P14/6687—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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- C07F7/02—Silicon compounds
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- Inorganic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Electrodes Of Semiconductors (AREA)
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Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361880261P | 2013-09-20 | 2013-09-20 | |
| US61/880,261 | 2013-09-20 | ||
| US14/483,751 US10453675B2 (en) | 2013-09-20 | 2014-09-11 | Organoaminosilane precursors and methods for depositing films comprising same |
| US14/483,751 | 2014-09-11 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017013290A Division JP6588480B2 (ja) | 2013-09-20 | 2017-01-27 | 有機アミノシラン前駆体およびこれを含む膜の堆積方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2015096489A true JP2015096489A (ja) | 2015-05-21 |
Family
ID=51660307
Family Applications (6)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014190075A Withdrawn JP2015096489A (ja) | 2013-09-20 | 2014-09-18 | 有機アミノシラン前駆体およびこれを含む膜の堆積方法 |
| JP2017013290A Active JP6588480B2 (ja) | 2013-09-20 | 2017-01-27 | 有機アミノシラン前駆体およびこれを含む膜の堆積方法 |
| JP2018081224A Active JP6777680B2 (ja) | 2013-09-20 | 2018-04-20 | 有機アミノシラン前駆体およびこれを含む膜の堆積方法 |
| JP2019120928A Active JP6928035B2 (ja) | 2013-09-20 | 2019-06-28 | 有機アミノシラン前駆体およびこれを含む膜の堆積方法 |
| JP2021129199A Pending JP2021185150A (ja) | 2013-09-20 | 2021-08-05 | 有機アミノシラン前駆体およびこれを含む膜の堆積方法 |
| JP2023115894A Active JP7609935B2 (ja) | 2013-09-20 | 2023-07-14 | 有機アミノシラン前駆体およびこれを含む膜の堆積方法 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017013290A Active JP6588480B2 (ja) | 2013-09-20 | 2017-01-27 | 有機アミノシラン前駆体およびこれを含む膜の堆積方法 |
| JP2018081224A Active JP6777680B2 (ja) | 2013-09-20 | 2018-04-20 | 有機アミノシラン前駆体およびこれを含む膜の堆積方法 |
| JP2019120928A Active JP6928035B2 (ja) | 2013-09-20 | 2019-06-28 | 有機アミノシラン前駆体およびこれを含む膜の堆積方法 |
| JP2021129199A Pending JP2021185150A (ja) | 2013-09-20 | 2021-08-05 | 有機アミノシラン前駆体およびこれを含む膜の堆積方法 |
| JP2023115894A Active JP7609935B2 (ja) | 2013-09-20 | 2023-07-14 | 有機アミノシラン前駆体およびこれを含む膜の堆積方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (5) | US10453675B2 (enExample) |
| EP (4) | EP3095788B1 (enExample) |
| JP (6) | JP2015096489A (enExample) |
| KR (3) | KR101749705B1 (enExample) |
| CN (1) | CN104672265B (enExample) |
| TW (4) | TWI535729B (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9758534B2 (en) | 2014-02-28 | 2017-09-12 | Versum Materials Us, Llc | Organoaminosilanes and methods for making same |
| JP2017529361A (ja) * | 2014-09-23 | 2017-10-05 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Si含有膜堆積用カルボシラン置換アミン前駆体及びその方法 |
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