US10460929B2 - Organoaminosilane precursors and methods for depositing films comprising same - Google Patents
Organoaminosilane precursors and methods for depositing films comprising same Download PDFInfo
- Publication number
- US10460929B2 US10460929B2 US15/479,893 US201715479893A US10460929B2 US 10460929 B2 US10460929 B2 US 10460929B2 US 201715479893 A US201715479893 A US 201715479893A US 10460929 B2 US10460929 B2 US 10460929B2
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- branched
- linear
- disilabutane
- silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic System
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic System
- C07F9/66—Arsenic compounds
- C07F9/70—Organo-arsenic compounds
- C07F9/74—Aromatic compounds
- C07F9/78—Aromatic compounds containing amino groups
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
- C09D5/24—Electrically-conducting paints
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
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Definitions
- Precursors, particularly organoaminosilane, and compositions thereof that can be used for the deposition of silicon-containing films including but not limited to, amorphous silicon, crystalline silicon, silicon nitride, silicon oxide, carbon doped silicon oxide, silicon carbo-nitride, and silicon oxynitride films are described herein.
- amorphous silicon, crystalline silicon, silicon nitride, silicon oxide, carbon doped silicon oxide, silicon carbo-nitride, and silicon oxynitride films are described herein.
- described herein is the use of the precursors for depositing silicon-containing films in the fabrication of integrated circuit devices.
- the organoaminosilane precursors may be used for a variety of deposition processes, including but not limited to, atomic layer deposition (“ALD”), chemical vapor deposition (“CVD”), plasma enhanced chemical vapor deposition (“PECVD”), low pressure chemical vapor deposition (“LPCVD”), and atmospheric pressure chemical vapor deposition.
- ALD atomic layer deposition
- CVD chemical vapor deposition
- PECVD plasma enhanced chemical vapor deposition
- LPCVD low pressure chemical vapor deposition
- atmospheric pressure chemical vapor deposition atmospheric pressure chemical vapor deposition
- silicon-containing films such as, but not limited to, silicon oxide, carbon doped silicon oxide or silicon nitride films.
- these compounds suitable for use as precursors include silanes, chlorosilanes, polysilazanes, aminosilanes, and azidosilanes.
- Inert carrier gas or diluents such as, but not limited, helium, hydrogen, nitrogen, etc., are also used to deliver the precursors to the reaction chamber.
- Low pressure chemical vapor deposition (LPCVD) processes are one of the more widely accepted methods used by semiconductor industry for the deposition of silicon-containing films.
- Low pressure chemical vapor deposition (LPCVD) using ammonia may require deposition temperatures of greater than 750° C. to obtain reasonable growth rates and uniformities. Higher deposition temperatures are typically employed to provide improved film properties.
- One of the more common industry methods to grow silicon nitride or other silicon-containing films is through low pressure chemical vapor deposition in a hot wall reactor at temperatures >750° C. using the precursors silane, dichlorosilane, and/or ammonia.
- silane pyrophoric. This may present problems in handling and usage.
- films deposited from silane and dichlorosilane may contain certain impurities.
- films deposited using dichlorosilane may contain certain impurities, such as chlorine and ammonium chloride, which are formed as byproducts during the deposition process.
- films deposited using silane may contain hydrogen.
- Precursors that are used in depositing silicon nitride films such as BTBAS and chlorosilanes generally deposit the films at temperatures greater than 550° C.
- the trend of miniaturization of semiconductor devices and low thermal budget requires a lower process temperature and a higher deposition rate.
- the temperature, at which the silicon films are deposited, should decrease in order to prevent ion diffusion in the lattice, particularly for those substrates comprising metallization layers and on many Group III-V and II-VI devices.
- silicon-containing films such as silicon oxide, carbon doped silicon oxide, silicon oxynitride, or silicon nitride films that are sufficiently chemically reactive to allow deposition via CVD, ALD or other processes at temperatures of 550° C. or below or even at room temperature.
- US Publ. No. 2013/224964 describes a method of forming a dielectric film having Si—C bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: (i) adsorbing a precursor on a surface of a substrate; (ii) reacting the adsorbed precursor and a reactant gas on the surface; and (iii) repeating steps (i) and (ii) to form a dielectric film having at least Si—C bonds on the substrate.
- the precursor has a Si—C—Si bond in its molecule, and the reactant gas is oxygen-free and halogen-free and is constituted by at least a rare gas.
- the insulator films may be formed on substrates by CVD.
- U.S. Pat. No. 7,125,582 describes a method and system that involves combining a Si source precursor and a nitrogen (N) source precursor at a temperature up to 550° C. and forming a Si nitride film.
- 1,2-Bis(bromosilyl)ethane reacts with ammonia to give 1,4-bis(1-aza-2,5-disilacyclopentane-1-yl)-1,4-disilabutane, traces of 1,6-diaza-2,5,7,10,11,14-hexasilabicyclo[4.4.4]tetradecane and nonvolatile products.
- organoaminosilane precursors such as, but not limited to, amorphous silicon, crystalline silicon, silicon oxide, carbon doped silicon oxide, silicon nitride, silicon oxynitride, silicon carbide, silicon carbonitride, and combinations thereof onto at least a portion of a substrate.
- the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of silicon oxide or carbon doped silicon oxide films.
- compositions comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
- the composition may further comprise a solvent.
- methods to form films comprising silicon or coatings on an object to be processed such as, for example, a semiconductor wafer.
- a film comprising silicon and oxygen is deposited onto a substrate using an organoaminosilane precursor and an oxygen-containing source in a deposition chamber under conditions for generating a silicon oxide, carbon doped silicon oxide film on the substrate.
- a film comprising silicon and nitrogen is deposited onto a substrate using an organoaminosilane precursor and a nitrogen containing precursor in a deposition chamber under conditions for generating a silicon nitride film on the substrate.
- the organoaminosilane precursors described herein can also be used a dopant for metal containing films, such as but not limited to, metal oxide films or metal nitride films.
- an organoaminosilane having the formula described herein is employed as at least one of the silicon containing precursors.
- the organoaminosilane precursor described herein comprises a compound represented by one of following Formulae A through E below:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- composition comprising: (a) at least one organoaminosilane precursor a compound represented by one of following Formulae A through E below:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- exemplary solvents can include, without limitation, ether, tertiary amine, alkyl hydrocarbon, aromatic hydrocarbon, tertiary aminoether, and combinations thereof.
- the difference between the boiling point of the organoaminosilane and the boiling point of the solvent is 40° C. or less.
- a method for forming a silicon-containing film on at least one surface of a substrate comprising:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- R 1 and R 2 are the same. In other embodiments, R 1 and R 2 are different. In the foregoing or other embodiments, R 1 and R 2 can be linked together to form a ring. In further embodiments, R 1 and R 2 are not linked together to form a ring.
- a method of forming a silicon oxide, carbon doped silicon oxide film via an atomic layer deposition process or ALD-like process comprising the steps of:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- steps b through e are repeated until a desired thickness of the film is obtained.
- a method of forming a film selected from a silicon oxide film and a carbon doped silicon oxide film onto at least a surface of a substrate using a CVD process comprising:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- R 1 and R 2 are the same. In other embodiments, R 1 and R 2 are different. In the foregoing or other embodiments, R 1 and R 2 can be linked together to form a ring. In the yet further embodiments, R 1 and R 2 are not linked together to form a ring.
- a method of forming a silicon nitride or silicon carbonitride film via an atomic layer deposition process comprising the steps of:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- R 1 and R 2 in Formulae A through E are the same. In other embodiments, R 1 and R 2 are different. In the foregoing or other embodiments, R 1 and R 2 can be linked together to form a ring. In a further embodiment, R 1 and R 2 are not linked together to form a ring.
- a method of forming a silicon nitride or carbonitride film onto at least a surface of a substrate using a CVD process comprising:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- R 1 and R 2 are the same. In other embodiments, R 1 and R 2 are different. In the foregoing or other embodiments, R 1 and R 2 can be linked together to form a ring. In the yet further embodiments, R 1 and R 2 are not linked together to form a ring.
- the process is depositing an amorphous or a crystalline silicon film.
- the method comprises:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- the reactor is maintained at a pressure ranging from 10 mTorr to 760 Torr during the introducing step.
- the above steps define one cycle for the method described herein, and the cycle of steps can be repeated until the desired thickness of a film is obtained.
- R 1 and R 2 are the same. In other embodiments, R 1 and R 2 are different. In the foregoing or other embodiments, R 1 and R 2 can be linked together to form a ring. In the yet further embodiments, R 1 and R 2 are not linked together to form a ring.
- a method of depositing an amorphous or a crystalline silicon film via an atomic layer deposition or cyclic chemical vapor deposition process comprising the steps of:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- a vessel for depositing a silicon-containing film comprising one or more organoaminosilane precursor having any one of Formulae A, B, C, or D or E a combination thereof of one or more precursors represented by Formulae A, B, C, D or E is described herein.
- the vessel comprises at least one pressurizable vessel (preferably of stainless steel) fitted with the proper valves and fittings to allow the delivery of one or more precursors to the reactor for a CVD or an ALD process.
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- R 1 in the amine is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 in the amine is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group with a silicon source comprising at least one compound selected from the:
- R 3 and R 4 in the silicon source are independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic alkylene group, a C 3 to C 10 hetero-cyclic alkylene group, a C 5 to C 10 arylene group, and a C 5 to C 10 hetero-arylene group in the presence of a catalyst under reaction conditions sufficient for at least a portion of the silicon source and at least a portion of the amine to react and provide the organoaminosilane.
- FIG. 1 shows the relative deposition rates of the organoaminosilane described herein, 1-di-iso-propylamino-1,4-disilabutane, compared to deposition rates of other organoaminosilanes provided in reference articles such as bis(diethylamino)silane (BDEAS), bis(tert-butylamino)silane (BTBAS), bis(ethylmethylamino)silane (BEMAS), tris(dimethylamino)silane(TRDMAS), and di-sec-butylaminosilane (DSBAS).
- BDEAS bis(diethylamino)silane
- BBAS bis(tert-butylamino)silane
- BEMAS bis(ethylmethylamino)silane
- TRDMAS tris(dimethylamino)silane
- DSBAS di-sec-butylaminosilane
- the organoaminosilanes described herein are used as precursors to form stoichiometric and non-stoichiometric silicon containing films such as, but not limited to, amorphous silicon, silicon-rich carbonitride, crystalline silicon, silicon oxide, silicon oxycarbide, silicon nitride, silicon oxynitride, and silicon oxycarbonitride. These precursors can also be used, for example, as dopants for metal containing films.
- the organoaminosilane precursors used in semi-conductor processes are typically high purity volatile liquid precursor chemical that are vaporized and delivered to a deposition chamber or reactor as a gas to deposit a silicon containing film via CVD or ALD processes for semiconductor devices.
- precursor materials for deposition depends upon the desired resultant silicon-containing material or film.
- a precursor material may be chosen for its content of chemical elements, its stoichiometric ratios of the chemical elements, and/or the resultant silicon containing film or coating that are formed under CVD.
- the precursor material may also be chosen for various other characteristics such as cost, relatively low toxicity, handling characteristics, ability to maintain liquid phase at room temperature, volatility, molecular weight, and/or other considerations.
- the precursors described herein can be delivered to the reactor system by any number of means, preferably using a pressurizable stainless steel vessel fitted with the proper valves and fittings, to allow the delivery of liquid phase precursor to the deposition chamber or reactor.
- the organoaminosilane precursors described herein exhibit a balance of reactivity and stability that makes them ideally suitable as CVD or ALD precursors in microelectronic device manufacturing processes.
- reactivity certain precursors may have boiling points that are too high to be vaporized and delivered to the reactor to be deposited as a film on a substrate.
- Precursors having higher relative boiling points require that the delivery container and lines need to be heated at or above the boiling point of the precursor under a given vacuum to prevent condensation or particles from forming in the container, lines, or both.
- other precursors may form silane (SiH 4 ) or disilane (Si 2 H 6 ) as they degrade.
- the organoaminosilane precursors having Formulae A through E described herein comprise 2% or less by weight, or 1% or less by weight, or 0.5% or less by weight of by-product after being stored for a time period of 6 months or greater, or one year or greater which is indicative of being shelf stable.
- the organoaminosilane precursor described herein may be able to deposit high density materials at relatively low deposition temperatures, e.g., 500° C. or less, or 400° C. or less, 300° C. or less, 200° C. or less, 100° C. or less, or 50° C. or less.
- the organoaminosilane precursor can be used to deposit a silicon-containing film via ALD or PEALD at a temperature as low as 50° C. or less or at ambient or room temperature (e.g., 25° C.).
- composition described herein is a composition for forming a silicon-containing film comprising: an organoaminosilane having any one of Formulae A through E described herein and a solvent(s).
- composition described herein may provide one or more advantages compared to pure organoaminosilane. These advantages include: better usage of the organoaminosilane in semiconductor processes, better stability over long term storage, cleaner evaporation by flash vaporization, and/or overall more stable direct liquid injection (DLI) chemical vapor deposition process.
- DLI direct liquid injection
- the weight percentage of the organoaminosilane in the composition can range from 1 to 99% with the balance being solvent(s) wherein the solvent(s) does not react with the organoaminosilane and has a boiling point similar to the organoaminosilane. With regard to the latter, the difference between the boiling points of the organoaminosilane and solvent(s) in the composition is 40° C. or less, more preferably 20° C. or less, or 10° C. or less.
- Exemplary solvents include, but not limited to, hexanes, octane, toluene, ethylcyclohexane, decane, dodecane, bis(2-dimethylaminoethyl) ether.
- At least one organoaminosilane precursor a compound represented by one of following Formulae A through E below:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- alkyl denotes a linear, or branched functional group having from 1 to 10 or 1 to 6 carbon atoms.
- exemplary alkyl groups include, but are not limited to, methyl (Me), ethyl (Et), propyl (Pr n ), isopropyl (Pr i ), butyl (Bu n ), isobutyl (Bu i ), sec-butyl (Bu s ), tert-butyl (Bu t ), pentyl, iso-pentyl, tert-pentyl (Am t ), hexyl, iso-hexyl, and neo-hexyl.
- the alkyl group may have one or more functional groups such as, but not limited to, an alkoxy group, a dialkylamino group or combinations thereof, attached thereto. In other embodiments, the alkyl group does not have one or more functional groups attached thereto.
- exemplary organoaminosilanes having Formula A and having alkyl groups as R 1 and R 2 (if present) and an alkylene group such as methylene —CH 2 — or ethylene —CH 2 CH 2 — as R 3 include, but are not limited to:
- cyclic alkyl denotes a cyclic functional group having from 3 to 10 or from 4 to 10 carbon atoms or from 5 to 10 carbon atoms.
- exemplary cyclic alkyl groups include, but are not limited to, cyclobutyl, cyclopentyl, cyclohexyl, and cyclooctyl groups.
- Exemplary organoaminosilanes having Formula A and having cyclic alkyl groups as R 1 and R 2 (if present) and an alkylene group such as methylene —CH 2 — or ethylene —CH 2 CH 2 — as R 3 include, but are not limited to:
- aryl denotes an aromatic cyclic functional group having from 5 to 12 carbon atoms or from 6 to 10 carbon atoms.
- Exemplary aryl groups include, but are not limited to, phenyl (Ph), benzyl, chlorobenzyl, tolyl, and o-xylyl.
- Exemplary organoaminosilanes having Formula A and having aryl groups as R 1 and R 2 (if present) and an alkylene group methylene —CH 2 — or ethylene —CH 2 CH 2 — as R 3 include:
- one or more of the alkyl group, alkenyl group, alkynyl group, and/or aryl group in Formulae A through E may be substituted or have one or more atoms or group of atoms substituted in place of, for example, a hydrogen atom.
- substituents include, but are not limited to, oxygen, sulfur, halogen atoms (e.g., F, Cl, I, or Br), nitrogen, and phosphorous.
- one or more of the alkyl group, alkenyl group, alkynyl group, and/or aryl group in Formulae A through E may be unsubstituted.
- the cyclic alkyl is substituted or is a hetero-cyclic alkyl group.
- hetero-cyclic alkyl denotes a cyclic functional group having from 3 to 10 or from 4 to 10 carbon atoms or from 5 to 10 carbon atoms as well as at least one oxygen atom or nitrogen atom or both.
- Exemplary organoaminosilanes having Formula A and having hetero-cyclic alkyl groups as R 1 and R 2 (if present) and an alkylene group methylene —CH 2 — as R 3 include, but are not limited to:
- the aryl is substituted or is a hetero-aryl group.
- hetero aryl denotes aryl functional group having from 3 to 10 or from 4 to 10 carbon atoms or from 5 to 10 carbon atoms as well as at least one oxygen atom or nitrogen atom or both.
- alkenyl group denotes a group which has one or more carbon-carbon double bonds and has from 3 to 10 or from 3 to 6 or from 3 to 4 carbon atoms.
- alkynyl group denotes a group which has one or more carbon-carbon triple bonds and has from 3 to 10 or from 3 to 6 or from 3 to 4 carbon atoms.
- alkylene denotes a hydrocarbon group having from 1 to 10 or from 4 to 10 carbon atoms or from 5 to 10 carbon atoms and are connected to two silicon atoms.
- exemplary alkylene groups include, but are not limited to, methylene (—CH 2 —), ethylene (—CH 2 CH 2 —), propylene (—CH 2 CH 2 CH 2 —), and iso-propylene (—CH(Me)CH 2 —).
- arylene denotes an aromatic cyclic functional group having from 5 to 12 carbon atoms or from 6 to 10 carbon atoms, preferably the two Si atoms are bonded to 1,2-positions or 1,4-positions of the arylene groups.
- hetero-arylene denotes an aromatic cyclic functional group having from 5 to 12 carbon atoms or from 6 to 10 carbon atoms, preferably the two Si atoms are bonded to 1,2-positions of the hetero-arylene groups.
- R 3 can be linked in the Formula D to form a ring structure.
- exemplary organoaminosilanes include, but are not limited to:
- R 3 and R 4 are each methylene —CH 2 — or, alternatively, each ethylene —CH 2 CH 2 — in Formula E.
- exemplary organoaminosilanes include, but are not limited to:
- the method used to form the silicon-containing films or coatings are deposition processes.
- suitable deposition processes for the method disclosed herein include, but are not limited to, cyclic CVD (CCVD), MOCVD (Metal Organic CVD), thermal chemical vapor deposition, plasma enhanced chemical vapor deposition (“PECVD”), high density PECVD, photon assisted CVD, plasma-photon assisted (“PPECVD”), cryogenic chemical vapor deposition, chemical assisted vapor deposition, hot-filament chemical vapor deposition, CVD of a liquid polymer precursor, deposition from supercritical fluids, and low energy CVD (LECVD).
- CCVD cyclic CVD
- MOCVD Metal Organic CVD
- PECVD plasma enhanced chemical vapor deposition
- PECVD plasma enhanced chemical vapor deposition
- PECVD plasma-photon assisted
- cryogenic chemical vapor deposition chemical assisted vapor deposition
- hot-filament chemical vapor deposition hot-filament chemical vapor deposition
- the metal containing films are deposited via atomic layer deposition (ALD), plasma enhanced ALD (PEALD) or plasma enhanced cyclic CVD (PECCVD) process.
- ALD atomic layer deposition
- PEALD plasma enhanced ALD
- PECCVD plasma enhanced cyclic CVD
- chemical vapor deposition processes refers to any process wherein a substrate is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposition.
- atomic layer deposition process refers to a self-limiting (e.g., the amount of film material deposited in each reaction cycle is constant), sequential surface chemistry that deposits films of materials onto substrates of varying compositions.
- the precursors, reagents and sources used herein may be sometimes described as “gaseous”, it is understood that the precursors can be either liquid or solid which are transported with or without an inert gas into the reactor via direct vaporization, bubbling or sublimation.
- the vaporized precursors can pass through a plasma generator.
- the silicon-containing film is deposited using an ALD process.
- the silicon-containing film is deposited using a CCVD process.
- the silicon-containing film is deposited using a thermal CVD process.
- reactor as used herein, includes without limitation, reaction chamber or deposition chamber.
- the method disclosed herein avoids pre-reaction of the precursors by using ALD or CCVD methods that separate the precursors prior to and/or during the introduction to the reactor.
- deposition techniques such as ALD or CCVD processes are used to deposit the silicon-containing film.
- the film is deposited via an ALD process by exposing the substrate surface alternatively to the one or more the silicon-containing precursor, oxygen-containing source, nitrogen-containing source, or other precursor or reagent. Film growth proceeds by self-limiting control of surface reaction, the pulse length of each precursor or reagent, and the deposition temperature. However, once the surface of the substrate is saturated, the film growth ceases.
- the method described herein further comprises one or more additional silicon-containing precursors other than the organoaminosilane precursor having the above Formulae A through E.
- additional silicon-containing precursors include, but are not limited to, monoaminosilane (e.g., di-iso-propylaminosilane, di-sec-butylaminosilane, phenylmethylaminosilane); organo-silicon compounds such as trisilylamine (TSA); siloxanes (e.g., hexamethyl disiloxane (HMDSO) and dimethyl siloxane (DMSO)); organosilanes (e.g., methylsilane, dimethylsilane, diethylsilane, vinyl trimethylsilane, trimethylsilane, tetramethylsilane, ethylsilane, disilylmethane, 2,4-disilapentane, 1,4-disilabutane, 2,5-disila
- the one or more silicon-containing precursors may be introduced into the reactor at a predetermined molar volume, or from about 0.1 to about 1000 micromoles.
- the silicon-containing and/or organoaminosilane precursor may be introduced into the reactor for a predetermined time period. In certain embodiments, the time period ranges from about 0.001 to about 500 seconds.
- the silicon-containing films deposited using the methods described herein are formed in the presence of oxygen using an oxygen-containing source, reagent or precursor comprising oxygen.
- An oxygen-containing source may be introduced into the reactor in the form of at least one oxygen-containing source and/or may be present incidentally in the other precursors used in the deposition process.
- Suitable oxygen-containing source gases may include, for example, water (H 2 O) (e.g., deionized water, purifier water, and/or distilled water), oxygen (O 2 ), oxygen plasma, ozone (C 3 ), NO, N 2 O, NO 2 , carbon monoxide (CO), carbon dioxide (CO 2 ), carbon dioxide plasma, and combinations thereof.
- the oxygen-containing source comprises an oxygen-containing source gas that is introduced into the reactor at a flow rate ranging from about 1 to about 2000 standard cubic centimeters (sccm) or from about 1 to about 1000 sccm.
- the oxygen-containing source can be introduced for a time that ranges from about 0.1 to about 100 seconds.
- the oxygen-containing source comprises water having a temperature of 10° C. or greater.
- the precursor pulse can have a pulse duration that is greater than 0.01 seconds, and the oxygen-containing source can have a pulse duration that is less than 0.01 seconds, while the water pulse duration can have a pulse duration that is less than 0.01 seconds.
- the purge duration between the pulses that can be as low as 0 seconds or is continuously pulsed without a purge in-between.
- the oxygen-containing source or reagent is provided in a molecular amount less than a 1:1 ratio to the silicon precursor, so that at least some carbon is retained in the as deposited silicon-containing film.
- the silicon-containing films comprise silicon and nitrogen.
- the silicon-containing films deposited using the methods described herein are formed in the presence of nitrogen-containing source.
- a nitrogen-containing source may be introduced into the reactor in the form of at least one nitrogen-containing source and/or may be present incidentally in the other precursors used in the deposition process.
- Suitable nitrogen-containing source gases may include, for example, ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/argon plasma, nitrogen/helium plasma, nitrogen/hydrogen plasma, and mixture thereof.
- the nitrogen-containing source comprises an ammonia plasma or hydrogen/nitrogen plasma or nitrogen/argon plasma or nitrogen/helium plasma source gas that is introduced into the reactor at a flow rate ranging from about 1 to about 2000 standard cubic centimeters (sccm) or from about 1 to about 1000 sccm.
- the nitrogen-containing source can be introduced for a time that ranges from about 0.01 to about 100 seconds.
- the precursor pulse can have a pulse duration that is greater than 0.01 seconds
- the nitrogen-containing source can have a pulse duration that is less than 0.01 seconds
- the water pulse duration can have a pulse duration that is less than 0.01 seconds.
- the purge duration between the pulses that can be as low as 0 seconds or is continuously pulsed without a purge in-between.
- the deposition methods disclosed herein may involve one or more purge gases.
- the purge gas which is used to purge away unconsumed reactants and/or reaction byproducts, is an inert gas that does not react with the precursors.
- Exemplary purge gases include, but are not limited to, argon (Ar), krypton (Kr), xenon (Xe), nitrogen (N 2 ), helium (He), neon, hydrogen (H 2 ), and mixtures thereof.
- a purge gas such as Ar is supplied into the reactor at a flow rate ranging from about 10 to about 2000 sccm for about 0.1 to 1000 seconds, thereby purging the unreacted material and any byproduct that may remain in the reactor.
- the respective step of supplying the precursors, oxygen-containing source, the nitrogen-containing source, and/or other precursors, source gases, and/or reagents may be performed by changing the time for supplying them to change the stoichiometric composition of the resulting silicon-containing film.
- Energy is applied to the at least one of the precursor, nitrogen-containing source, reducing agent, other precursors or combination thereof to induce reaction and to form the silicon-containing film or coating on the substrate.
- Such energy can be provided by, but not limited to, thermal, plasma, pulsed plasma, helicon plasma, high density plasma, inductively coupled plasma, X-ray, e-beam, photon, remote plasma methods, and combinations thereof.
- a secondary RF frequency source can be used to modify the plasma characteristics at the substrate surface.
- the plasma-generated process may comprise a direct plasma-generated process in which plasma is directly generated in the reactor, or alternatively a remote plasma-generated process in which plasma is generated outside of the reactor and supplied into the reactor.
- the organoaminosilane precursors and/or other silicon-containing precursors may be delivered to the reaction chamber such as a CVD or ALD reactor in a variety of ways.
- a liquid delivery system may be utilized.
- a combined liquid delivery and flash vaporization process unit may be employed, such as, for example, the turbo vaporizer manufactured by MSP Corporation of Shoreview, Minn., to enable low volatility materials to be volumetrically delivered, which leads to reproducible transport and deposition without thermal decomposition of the precursor.
- the precursors described herein may be delivered in neat liquid form, or alternatively, may be employed in solvent formulations or compositions comprising same.
- the precursor formulations may include solvent component(s) of suitable character as may be desirable and advantageous in a given end use application to form a film on a substrate.
- the solvent or mixture thereof selected does not react with the organoaminosilane.
- the amount of solvent by weight percentage in the composition ranges from 0.5% by weight to 99.5% or from 10% by weight to 75%.
- the solvent has a boiling point (b.p.) similar to the b.p. of the organoaminosilane of Formulae A through E or the difference between the b.p. of the solvent and the b.p. of the organoaminosilane of Formulae A through E is 40° C. or less, 30° C. or less, or 20° C.
- the difference between the boiling points ranges from any one or more of the following end-points: 0, 10, 20, 30, or 40° C.
- suitable ranges of b.p. difference include without limitation, 0 to 40° C., 20° to 30° C., or 10° to 30° C.
- suitable solvents in the compositions include, but are not limited to, an ether (such as 1,4-dioxane, dibutyl ether), a tertiary amine (such as pyridine, 1-methylpiperidine, 1-ethylpiperidine, N,N′-Dimethylpiperazine, N,N,N′,N′-Tetramethylethylenediamine), a nitrile (such as benzonitrile), an alkyl hydrocarbon (such as octane, nonane, dodecane, ethylcyclohexane), an aromatic hydrocarbon (such as toluene, mesitylene), a tertiary aminoether (such as bis(2-dimethylaminoethyl) ether), or mixtures thereof.
- an ether such as 1,4-dioxane, dibutyl ether
- a tertiary amine such as pyridine, 1-methylpiperidine, 1-ethy
- a vessel for depositing a silicon-containing film comprising one or more organoaminosilane precursor having Formulae A through E is described herein.
- the vessel comprises at least one pressurizable vessel (preferably of stainless steel) fitted with the proper valves and fittings to allow the delivery of one or more precursors to the reactor for a CVD or an ALD process.
- the organoaminosilane precursor having Formulae A through E is provided in a pressurizable vessel comprised of stainless steel and the purity of the precursor is 98% by weight or greater or 99.5% or greater which is suitable for the majority of semiconductor applications.
- such vessels can also have means for mixing the precursors with one or more additional precursor if desired.
- the contents of the vessel(s) can be premixed with an additional precursor.
- the organoaminosilane precursor and/or other precursor can be maintained in separate vessels or in a single vessel having separation means for maintaining the organoaminosilane precursor and other precursor separate during storage.
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group and a silicon source which is at least one selected from compounds having the following structures:
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic alkylene group, a C 3 to C 10 hetero-cyclic alkylene group, a C 5 to C 10 arylene group, and a C 5 to C 10 hetero-arylene group in the presence of a catalyst under reaction conditions sufficient for the silicon source and amine to react with or without an organic solvent and provide an organoaminosilane precursor comprising a compound represented by one of following Formulae A through E below:
- n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q equal 1 or 2 in Formula E and optionally wherein R 3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom.
- Exemplary catalysts include, but not limited to, tris(pentafluorophenyl)borane, BR 3 (wherein R is selected from a linear, branched, or cyclic C 1 to C 10 alkyl group, a C 5 to C 10 aryl group, or a C 1 to C 10 alkoxy group), 1,3-diisopropyl-4,5-dimethylimidazol-2-ylidene, 2,2′-bipyridyl, phenanthroline, Mg[N(SiMe 3 ) 2 ] 2 , [tris(4,4-dimethyl-2-oxazolinyl)phenylborate]MgMe, [tris(4,4-dimethyl-2-oxazolinyl)phenylborate]MgH, trimethylaluminium, triethylaluminum, aluminum chloride, Ca[N(SiMe 3 ) 2 ] 2 , dibenzylcalcium,
- a cyclic deposition process such as CCVD, ALD, or PEALD may be employed, wherein at least one silicon-containing precursor selected from an organoaminosilane precursor having the formula described herein and optionally a nitrogen-containing source such as, for example, ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/argon plasma, nitrogen/helium plasma, nitrogen/hydrogen plasma, organic amines (e.g. methylamine, ethylamine, iso-propylamine, tert-butylamine), and/or a plasma derived from an organic amine are employed.
- a nitrogen-containing source such as, for example, ammonia, hydrazine, monoalkylhydrazine, dialkylhydrazine, nitrogen, nitrogen/hydrogen, ammonia plasma, nitrogen plasma, nitrogen/argon plasma, nitrogen/helium plasma, nitrogen/hydrogen plasma, organic
- the gas lines connecting from the precursor canisters to the reaction chamber are heated to one or more temperatures depending upon the process requirements and the container of the organoaminosilane precursor having the formulae A through E described herein is kept at one or more temperatures for bubbling.
- a solution comprising the at least one silicon-containing precursor having the formula described herein is injected into a vaporizer kept at one or more temperatures for direct liquid injection.
- a flow of argon and/or other gas may be employed as a carrier gas to help deliver the vapor of the at least one organoaminosilane precursor to the reaction chamber during the precursor pulsing.
- the reaction chamber process pressure is about 10 torr or less, preferably about 1 torr.
- a substrate such as, without limitation, a silicon oxide, carbon doped silicon oxide, flexible substrate, or metal nitride substrate is heated on a heater stage in a reaction chamber that is exposed to the silicon-containing precursor initially to allow the organoaminosilane to chemically adsorb onto the surface of the substrate.
- a purge gas such as nitrogen, argon, or other inert gas purges away unabsorbed excess organoaminosilane from the process chamber.
- an oxygen-containing source may be introduced into reaction chamber to react with the absorbed surface followed by another gas purge to remove reaction by-products from the chamber. The process cycle can be repeated to achieve the desired film thickness.
- pumping under vacuum can be used to remove unabsorbed excess organoaminosilane from the process chamber, after sufficient evacuation under pumping, an oxygen-containing source may be introduced into reaction chamber to react with the absorbed surface followed by another pumping down purge to remove reaction by-products from the chamber.
- an oxygen-containing source may be introduced into reaction chamber to react with the absorbed surface followed by another pumping down purge to remove reaction by-products from the chamber.
- the organoaminosilane and the oxygen-containing source can be co-flowed into reaction chamber to react on the substrate surface to deposit silicon oxide, carbon doped silicon oxide.
- the purge step is not used.
- the steps of the methods described herein may be performed in a variety of orders, may be performed sequentially or concurrently (e.g., during at least a portion of another step), and any combination thereof.
- the respective step of supplying the precursors and the nitrogen-containing source gases may be performed by varying the duration of the time for supplying them to change the stoichiometric composition of the resulting silicon-containing film.
- the films containing both silicon and nitrogen are formed using an ALD, PEALD, CCVD or PECCVD deposition method that comprises the steps of:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- a method of forming a film selected from a silicon oxide and a carbon doped silicon oxide film via a PEALD or a PECCVD deposition process comprising the steps of:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- steps b through e are repeated until a desired thickness of the film is obtained.
- the silicon-containing films is formed using a ALD deposition method that comprises the steps of:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- a method of forming a silicon nitride or silicon carbonitride film via PEALD or PECCVD process comprising the steps of:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- steps b through e are repeated until a desired thickness of the film is obtained.
- the above steps define one cycle for the method described herein; and the cycle can be repeated until the desired thickness of a silicon-containing film is obtained.
- the steps of the methods described herein may be performed in a variety of orders, may be performed sequentially or concurrently (e.g., during at least a portion of another step), and any combination thereof.
- the respective step of supplying the precursors and oxygen-containing source may be performed by varying the duration of the time for supplying them to change the stoichiometric composition of the resulting silicon-containing film, although always using oxygen in less than a stoichiometric amount relative to the available silicon.
- silicon-containing precursors such as silicon-containing precursors, nitrogen-containing precursors, reducing agents, or other reagents can be alternately introduced into the reactor chamber.
- the silicon-containing film is deposited using a thermal CVD process.
- the method comprises:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- the reactor is maintained at a pressure ranging from 10 mTorr to 760 Torr during the introducing step.
- the above steps define one cycle for the method described herein; and the cycle can be repeated until the desired thickness of a silicon-containing film is obtained.
- the steps of the methods described herein may be performed in a variety of orders, may be performed sequentially or concurrently (e.g., during at least a portion of another step), and any combination thereof.
- the respective step of supplying the precursors and oxygen-containing source may be performed by varying the duration of the time for supplying them to change the stoichiometric composition of the resulting silicon-containing film, although always using oxygen in less than a stoichiometric amount relative to the available silicon.
- an amorphous or crystalline silicon film is deposited using the Formulae A through E precursor described herein.
- the method comprises:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- the reactor is maintained at a pressure ranging from 10 mTorr to 760 Torr during the introducing step. The above steps define one cycle for the method described herein; and the cycle can be repeated until the desired thickness of a film is obtained.
- silicon-containing precursors such as silicon-containing precursors, nitrogen-containing precursors, oxygen-containing sources, reducing agents, and/or other reagents can be alternately introduced into the reactor chamber.
- the silicon-containing film is deposited using a thermal CVD process.
- the method comprises:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- the reactor is maintained at a pressure ranging from 10 mTorr to 760 Torr during the introducing step.
- the organoaminosilane precursors are used for depositing a silicon containing film which is an amorphous film, a crystalline silicon film, or a mixture thereof.
- the silicon containing films is formed using a deposition method selected from ALD or cyclic CVD that comprises the steps of:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- the above steps define one cycle for the method described herein; and the cycle can be repeated until the desired thickness of a silicon containing film is obtained.
- the desired thickness of the film can range from 1 ⁇ to 10,000 ⁇ .
- a method of forming a silicon-containing film onto at least a surface of a substrate using a deposition process selected from a plasma enhanced atomic layer (PEALD) process and a plasma enhanced cyclic chemical vapor deposition (PECCVD) process the method comprising:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- the plasma source is selected from the group consisting of hydrogen plasma, argon plasma, helium plasma, neon plasma, xenon plasma, and mixtures thereof.
- the silicon-containing film is selected from the group consisting of silicon carbonitride, silicon carbide, silicon nitride, silicon carbonitride, and silicon carboxynitride.
- a method of depositing amorphous or crystalline silicon film via an atomic layer deposition or cyclic chemical vapor deposition process or chemical vapor deposition at temperature lower than conventional silicon precursors comprising the steps of:
- R 1 is selected from a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group;
- R 2 is selected from hydrogen, a linear or branched C 1 to C 10 alkyl group, a linear or branched C 3 to C 10 alkenyl group, a linear or branched C 3 to C 10 alkynyl group, a C 3 to C 10 cyclic alkyl group, and a C 5 to C 10 aryl group
- R 3 and R 4 are each independently selected from a linear or branched C 1 to C 10 alkylene group, a linear or branched C 3 to C 6 alkenylene group, a linear or branched C 3 to C 6 alkynylene group, a C 3 to C 10 cyclic al
- steps b through c are repeated until a desired thickness of the silicon film is obtained.
- Formulae A through E precursors can generate H 2 Si: di-radicals or H 3 Si. radical upon heating which can promote formation oligomers containing Si—Si bonds or anchor on the surface of a substrate. Those oligomers or anchored SiH 2 or SiH 3 can further form amorphous silicon films. In this or other embodiments, those oligomers function as a seed layer for subsequent deposition of silicon or silicon oxide films.
- the organoaminosilane precursors having Formulae A through E described herein can also be used as a dopant for metal containing films, such as but not limited to, metal oxide films or metal nitride films.
- the metal containing film is deposited using an ALD or CVD process such as those processes described herein using metal alkoxide, metal amide, or volatile organometallic precursors.
- suitable metal alkoxide precursors that may be used with the method disclosed herein include, but are not limited to, group 3 to 6 metal alkoxide, group 3 to 6 metal complexes having both alkoxy and alkyl substituted cyclopentadienyl ligands, group 3 to 6 metal complexes having both alkoxy and alkyl substituted pyrrolyl ligands, group 3 to 6 metal complexes having both alkoxy and diketonate ligands; group 3 to 6 metal complexes having both alkoxy and ketoester ligands;
- suitable metal amide precursors that may be used with the method disclosed herein include, but are not limited to, tetrakis(dimethylamino)zirconium (TDMAZ), tetrakis(diethylamino)zirconium (TDEAZ), tetrakis(ethylmethylamino)zirconium (TEMAZ), tetrakis(dimethylamino)
- organometallic precursors that may be used with the method disclosed herein include, but are not limited to, group 3 metal cyclopentadienyls or alkyl cyclopentadienyls.
- exemplary Group 3 to 6 metal herein include, but not limited to, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Er, Yb, Lu, Ti, Hf, Zr, V, Nb, Ta, Cr, Mo, and W.
- the resultant silicon-containing films or coatings can be exposed to a post-deposition treatment such as, but not limited to, a plasma treatment, chemical treatment, ultraviolet light exposure, electron beam exposure, and/or other treatments to affect one or more properties of the film.
- a post-deposition treatment such as, but not limited to, a plasma treatment, chemical treatment, ultraviolet light exposure, electron beam exposure, and/or other treatments to affect one or more properties of the film.
- the silicon-containing films described herein have a dielectric constant of 6 or less.
- the films can have a dielectric constant of about 5 or below, or about 4 or below, or about 3.5 or below.
- films having other dielectric constants e.g., higher or lower can be formed depending upon the desired end-use of the film.
- the method described herein may be used to deposit a silicon-containing film on at least a portion of a substrate.
- suitable substrates include but are not limited to, silicon, SiO 2 , Si 3 N 4 , OSG, FSG, silicon carbide, hydrogenated silicon carbide, silicon nitride, hydrogenated silicon nitride, silicon carbonitride, hydrogenated silicon carbonitride, boronitride, antireflective coatings, photoresists, a flexible substrate, organic polymers, porous organic and inorganic materials, metals such as copper and aluminum, and diffusion barrier layers such as but not limited to TiN, Ti(C)N, TaN, Ta(C)N, Ta, W, or WN.
- the films are compatible with a variety of subsequent processing steps such as, for example, chemical mechanical planarization (CMP) and anisotropic etching processes.
- CMP chemical mechanical planarization
- the deposited films have applications, which include, but are not limited to, computer chips, optical devices, magnetic information storages, coatings on a supporting material or substrate, microelectromechanical systems (MEMS), nanoelectromechanical systems, thin film transistor (TFT), light emitting diodes (LED), organic light emitting diodes (OLED), IGZO, and liquid crystal displays (LCD).
- MEMS microelectromechanical systems
- TFT thin film transistor
- LED light emitting diodes
- OLED organic light emitting diodes
- IGZO liquid crystal displays
- GC-MS showed the following peaks: (a) 1-diethylamino-1,4-disilabutane: 161 (M+), 146 (M ⁇ 15), 130, 116, 102, 89, 72; (b) 1,4-bis(diethylamino)-1,4-disilabutane: 232 (M+), 217 (M ⁇ 15), 203, 187, 173, 160, 146, 130, 116.
- organoaminosilane precursors of Formula A to E were made via similar fashion as Examples 1 to 4 and were characterized by mass spectroscopy (MS).
- MS mass spectroscopy
- Example 5 Atomic Layer Deposition of Silicon-containing Film using 1-di-iso-propylamino-1-4-disilabutane and Ozone
- the following depositions were performed on a laboratory scale ALD processing tool at two temperature conditions: 55° C. and 100° C.
- the silicon precursor was delivered to the chamber by vapor draw. All gases (e.g., purge and reactant gas or precursor and oxygen source) were preheated accordingly prior to entering the deposition zone. Gases and precursor flow rates were controlled with ALD diaphragm valves with high speed actuation.
- the substrates used in the deposition were 12-inch long silicon strips.
- a thermocouple attached on the sample holder to confirm substrate temperature during deposition.
- Depositions were performed using ozone (6-19% wt) as oxygen source gas.
- a typical ALD cycle comprises the following steps:
- FIG. 1 provides growth rate per cycle vs. temperature for the 1-di-isopropylamino-1,4,-disilabutane films (average value from Ex. Film 1, 3, 5 at 100° C.) and Ex. Film 4 as well as films deposited via a thermal ALD process using the following organoaminosilanes: bis(diethylamino)silane (BDEAS: I. Suzuki, K. Yanagita, and C. Dussarrat, ECS Trans. 3 (15), 119 (2007) and M. W. O'Neill, H. R. Bowen, A. Derecskei-Kovacs, K. S. Cuthill, B. Han and M.
- BDEAS bis(diethylamino)silane
- the silicon-containing films deposited using the organoaminosilanes described herein exhibited higher growth rates relative to the other, referenced organoaminosilane precursors.
- the deposition temperature can be extended to one or more temperatures below 100° C., such as Ex. Film 4 which was deposited at a temperature of 55° C.
- Carbon concentration in the film range from 0.3 wt % to 9.6 wt % depending on the ozone concentration, suggesting it is possible to adjust the physical properties of the resultant silicon-containing films.
- Example 6 Plasma Enhanced Atomic Layer Deposition of Silicon-containing Film using 1-di-iso-propylamino-1-4-disilabutane and Nitrogen/Argon Plasma
- a deposition of silicon containing film was performed using 1-di-iso-propylamino-1,4-disilabutane and a nitrogen/argon plasma.
- the silicon wafer was heated to 100° C. or 300° C., respectively.
- Deposition process was performed using 300 mm production tool, ASM Stellar 3000, repeated 1000 times, using the following process conditions:
- Deposition rate, refractive index, density as well as wet etch rate in dilute HF of the resultant films are listed below in Table 4. Referring to the data in Table 4, the oxygen is believed to come from post-deposition air exposure when samples were sending for XPS analysis.
- Example 7 Plasma Enhanced Atomic Layer Deposition of Silicon-containing Film using 1-di-iso-propylamino-1-4-disilabutane and Argon Plasma
- a deposition of silicon containing film was performed using 1-di-iso-propylamino-1,4-disilabutane and argon plasma.
- the silicon wafer was heated to 100° C. or 300° C., respectively.
- Deposition process was performed using 300 mm production tool, ASM Stellar 3000, repeated 1000 times, using the following process conditions:
- Deposition rate, refractive index, film composition, density as well as wet etch rate of the resultant films in dilute HF are listed below in Table 5. Referring to the data in Table 5, the oxygen is believed to come from post-deposition air exposure when samples were sending for XPS analysis.
Abstract
In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.
Description
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3 and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom; and p and q in Formula E equal 1 or 2.
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom; and (b) a solvent. In certain embodiments of the composition described herein, exemplary solvents can include, without limitation, ether, tertiary amine, alkyl hydrocarbon, aromatic hydrocarbon, tertiary aminoether, and combinations thereof. In certain embodiments, the difference between the boiling point of the organoaminosilane and the boiling point of the solvent is 40° C. or less.
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom. In certain embodiments, R1 and R2 are the same. In other embodiments, R1 and R2 are different. In the foregoing or other embodiments, R1 and R2 can be linked together to form a ring. In further embodiments, R1 and R2 are not linked together to form a ring.
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom;
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom; and
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q equal 1 or 2 in Formula E and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom;
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom;
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom; and
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom wherein step b is repeated until a desired thickness of the film is obtained. In certain embodiments, the thickness of the film can be 1 Å or greater, or 1 to 10,000 Å, or 1 to 1000 Å, or 1 to 100 Å.
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; wherein n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q equal 1 or 2 in Formula E and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom, the method comprising the steps of:
wherein R3 and R4 in the silicon source are independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group in the presence of a catalyst under reaction conditions sufficient for at least a portion of the silicon source and at least a portion of the amine to react and provide the organoaminosilane.
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom.
wherein R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group in the presence of a catalyst under reaction conditions sufficient for the silicon source and amine to react with or without an organic solvent and provide an organoaminosilane precursor comprising a compound represented by one of following Formulae A through E below:
wherein n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q equal 1 or 2 in Formula E and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom. Exemplary catalysts include, but not limited to, tris(pentafluorophenyl)borane, BR3 (wherein R is selected from a linear, branched, or cyclic C1 to C10 alkyl group, a C5 to C10 aryl group, or a C1 to C10 alkoxy group), 1,3-diisopropyl-4,5-dimethylimidazol-2-ylidene, 2,2′-bipyridyl, phenanthroline, Mg[N(SiMe3)2]2, [tris(4,4-dimethyl-2-oxazolinyl)phenylborate]MgMe, [tris(4,4-dimethyl-2-oxazolinyl)phenylborate]MgH, trimethylaluminium,
triethylaluminum, aluminum chloride, Ca[N(SiMe3)2]2, dibenzylcalcium, {CH—[CMeNC6H3-2,6-iPr2]2}CaH, triruthenium dodecacarbonyl, {CH—[CMeNC6H3-2,6-iPr2]2}Ca[N(SiMe3)2], bis(cyclopentadienyl)dialkylltitanium(IV), bis(cylopentadienyl)titanium(IV)difluoride, bis(cylopentadienyl)titanium(IV)dichloride bis(cylopentadienyl)titanium(IV)dihydride, TiMe2(dmpe)2 [dmpe=1,2-bis(dimethylphosphino) ethane], (C5H5)2Ti(OAr)2 [Ar=(2,6-(iPr)2C6H3)], (C5H5)2Ti(SiHRR′)PMe3 [wherein R, R′ are each independently selected from a hydrogen atom (H), a methyl group (Me), and a phenyl (Ph) group], bis(benzene)chromium(0), chromium hexacarbonyl, dimanganese decacarbonyl, [Mn(CO)4Br]2, iron pentacarbonyl, (C5H5)Fe(CO)2Me, dicobalt octacarbonyl, nickel(II) acetate, nickel(II) chloride, [(dippe)Ni(μ-H)]2 [dippe=1,2-bis(diisopropylphosphino) ethane], (R-indenyl)Ni(PR′3)Me [wherein R is selected from 1-i-Pr, 1-SiMe3, and 1,3-(SiMe3)2; wherein R′ is selected from a methyl (Me) group and a phenyl (Ph) group], [{Ni(η-CH2; CHSiMe2)2O}2{μ-(η-CH2:CHSiMe2)2O}], nickel(II) acetylacetonate, ni(cyclooctadiene)2, copper(II) fluoride, copper(I) chloride, copper(II) chloride, copper(I) bromide, copper(II) bromide, copper(I) iodide, copper(I) acetate, Cu(PPh3)3Cl, zinc chloride, [tris(4,4-dimethyl-2-oxazolinyl)phenylborate]ZnH, Sr[N(SiMe3)2]2, Bis(cyclopentadienyl)dialkyllzirconium(IV), Bis(cylopentadienyl)zirconium(IV)difluoride, Bis(cylopentadienyl)zirconium(IV)dichloride, bis(cylopentadienyl)zirconium(IV)dihydride, [(Et3P)Ru(2,6-dimesitylthiophenolate)][B[3,5-(CF3)2C6H3]4], (C5Me5)Ru(R3P)x(NCMe)3−x]+ (wherein R is selected from a linear, branched, or cyclic C1 to C10 alkyl group and a C5 to C10 aryl group; x=0, 1, 2, 3), tris(triphenylphosphine) rhodium(I)carbonyl hydride, di-p-chloro-tetracarbonyldirhodium(I), tris(triphenylphosphine) rhodium(I) chloride (Wilkinson's Catalyst), hexarhodium hexadecacarbonyl, tris(triphenylphosphine)rhodium(I) carbonyl hydride, bis(triphenylphosphine)rhodium(I) carbonyl chloride, [RhCl(cyclooctadiene)]2, tris(dibenzylideneacetone)dipalladium(0), tetrakis(triphenylphosphine)palladium(0), palladium(II) acetate, palladium(II) chloride, palladium(II) iodide, cesium carbonate, (C5H5)2SmH, (C5Me5)2SmH, (NHC)Yb(N(SiMe3)2)2 [NHC=1,3-bis(2,4,6-trimethylphenyl)imidazol-2-ylidene)], tungsten hexacarbonyl, dirhenium decacarbonyl, triosmium dodecacarbonyl, tetrairidium dodecacarbonyl, (acetylacetonato) dicarbonyliridium(I), (POCOP)IrHCl [(POCOP)=2,6-(R2PO)2C6H3, (R is selected from isopropyl (iPr), normal butyl (nBu), and methyl (Me)], Ir(Me)2(C5Me5)L [wherein L is selected from PMe3 and PPh3], [Ir(cyclooctadiene)OMe]2, platinum(0)-1,3-divinyl-1,1,3,3-tetramethyldisiloxane (Karstedt's Catalyst), H2PtCl6.nH2O (chloroplatinic acid), bis(tri-tert-butylphosphine)platinum(0), PtO2, and Pt(cyclooctadiene)2.
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom;
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom;
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; 1 and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom;
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom;
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom; and
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom; and
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom; and
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom;
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom;
wherein R1 is selected from a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group; wherein R2 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C3 to C10 cyclic alkyl group, and a C5 to C10 aryl group, R3 and R4 are each independently selected from a linear or branched C1 to C10 alkylene group, a linear or branched C3 to C6 alkenylene group, a linear or branched C3 to C6 alkynylene group, a C3 to C10 cyclic alkylene group, a C3 to C10 hetero-cyclic alkylene group, a C5 to C10 arylene group, and a C5 to C10 hetero-arylene group; n in Formula A equals 1 or 2; m in Formula A equals 0, 1, 2, or 3; p and q in Formula E equal 1 or 2; and optionally wherein R3 in Formula D forms a ring selected from a four-membered, five-membered or six-membered ring with the two silicon atoms and at least one nitrogen atom;
TABLE 1 |
Organoaminosilanes Having Formula A, B, C, D, and E. |
No. | Precursor Name | MW | Structure | MS Peaks |
1 | 1-dimethylamino-1,4- disilabutane | 133.34 |
|
133, 116, 105, 86, 74, 58, 44 |
2 | 1,4-bis(dimethylamino)- 1,4-disilabutane | 176.41 |
|
176, 161, 145, 132, 116, 100, 89, 74 |
3 | 1-diethylamino-1,4- disilabutane | 161.41 |
|
161, 146, 130, 116, 102, 89, 72 |
4 | 1,4-bis(diethylamino)-1,4- disilabutane | 232.52 |
|
232, 217, 203, 187, 173, 160, 146, 130, 116 |
5 | 1-dipropylamino-1,4- disilabutane | 189.45 |
|
189, 174, 161, 144, 131, 116, 100, 89 |
6 | 1,4-bis(dipropylamino)- 1,4-disilabutane | 288.63 |
|
288, 273, 260, 230, 189, 174, 161, 145, 128 |
7 | 1-di-iso-propylamino-1,4- disilabutane | 189.45 |
|
189, 188. 174, 159, 144, 130, 102 |
8 | 1,4-bis(di-iso- propylamino)-1,4- disilabutane | 288.63 |
|
288, 287, 243, 229, 207, 188, 144, 130 |
9 | 1-(propyl-iso- propylamino)-1,4- disilabutane | 189.45 |
|
189, 174, 160, 144, 130, 116, 102, 86 |
10 | 1,4-bis(propyl-iso- propylamino)-1,4- disilabutane | 288.63 |
|
288, 274, 260, 244, 230, 216, 201, 188, 173, 160, 144, 128 |
11 | 1-dibutylamino-1,4- disilabutane | 217.50 |
|
217, 202, 189, 175, 159, 145, 132, 116, 102, 89 |
12 | 1,4-bis(dibutylamino)-1,4- disilabutane | 344.73 |
|
345, 330, 314, 302, 286, 217, 202, 175, 159, 116, 102 |
13 | 1-di-iso-butylamino-1,4- disilabutane | 217.50 |
|
217, 202, 175, 159, 143, 116 |
14 | 1,4-bis(di-iso-butylamino)- 1,4-disilabutane | 344.73 |
|
344, 329, 302, 286, 217, 202, 187, 175 |
15 | 1-di-sec-butylamino-1,4- disilabutane | 217.50 |
|
217, 202, 189, 172, 158, 144, 132, 114, 102 |
16 | 1-(sec-butyl-iso- propylamino)-1,4- disilabutane | 203.48 |
|
203, 188, 174, 158, 144, 130, 119, 102 |
17 | 1,4-bis(sec-butyl-iso- propylamino)-1,4- disilabutane | 316.68 |
|
316, 301, 281, 257, 243, 229, 215, 202, 186, 172, 158 |
18 | 1-(dicyclohexylamino)-1,4- disilabutane | 269.58 |
|
269, 254, 239, 227, 211, 199, 187, 129, 116 |
19 | 1-(cyclohexyl-iso- propylamino)-1,4- disilabutane | 229.51 |
|
229, 214, 199, 187, 171, 159, 145, 131, 116, 102 |
20 | 1,4-bis(cyclohexyl-iso- propylamino)-1,4- disilabutane | 368.76 |
|
368, 353, 340, 327, 229, 185, 171, 159, 145, 130, 116 |
21 | 1-(2-pyridyl-methylamino)- 1,4-disilabutane | 196.40 |
|
196, 181, 165, 151, 137, 121, 108 |
22 | 1,4-bis(2-pyridyl- methylamino)-1,4- disilabutane | 302.53 |
|
302, 287, 274, 258, 244, 223, 210, 196, 180, 166 |
23 | 1-pyrrolyl-1,4-disilabutane | 155.35 |
|
155, 140, 124, 112, 96, 86 |
24 | 1-(2,5-dimethylpyrrolyl)- 1,4-disilabutane | 183.40 |
|
183, 168, 154, 136, 124, 110 |
25 | 1-(phenylmethylamino)- 1,4-disilabutane | 195.41 |
|
195, 180, 165, 149, 137, 119, 107, 193 |
26 | 1,4- bis(phenylmethylamino)- 1,4-disilabutane | 300.55 |
|
300, 285, 271, 255, 242, 226, 208, 193, 180, 165 |
27 | 1-(2-methylpiperidino)- 1,4-disilabutane | 187.43 |
|
187, 172, 156, 141, 128, 113, 100, 84 |
28 | 1,4-bis(2- methylpiperidino)-1,4- disilabutane | 284.59 |
|
284, 269, 254, 240, 226, 208, 185, 173, 157, 143 |
29 | 1-(2,6-dimethylpiperidino)- 1,4-disilabutane | 201.46 |
|
201, 186, 171, 155, 143, 130, 116, 102 |
30 | 1,4-dimethyl-1,4-diaza- 5,8-disilacyclooctane | 174.39 |
|
174, 160, 143, 130, 115, 100, 86, 72 |
31 | 1-(2,6- dimethylmorpholino)-1,4- disilabutane | 203.43 |
|
203, 188, 173, 161, 145, 130, 116, 102 |
32 | 1,4-bis(2,6- dimethylmorpholino)-1,4- disilabutane | 316.59 |
|
316, 301, 286, 274, 258, 244, 232, 216, 203, 188 |
33 | 1-(2-methylindolino)-1,4- disilabutane | 221.45 |
|
221, 206, 191, 176, 161, 146, 132, 117, 105 |
34 | 1,4-bis(2-methylindolino)- 1,4-disilabutane | 352.63 |
|
352, 337, 324, 308, 394, 280, 264, 250, 235, 221, 207, 191 |
35 | 1-iso-propylamino-1,4- disilabutane | 147.37 |
|
147, 132, 116, 100, 88, 72 |
36 | 1,4-bis(iso-propylamino)- 1,4-disilabutane | 204.46 |
|
204, 189, 172, 160, 144, 130, 117, 102 |
37 | 1-iso-propyl-1-aza-2,5- disilacyclopentane | 145.35 |
|
145, 130, 114, 100, 86 |
38 | 5-iso-propyl-5-aza- 1,4,6,9-tetrasilanonane | 235.62 |
|
235, 220, 205, 191, 177, 159, 147, 130, 116, 102 |
39 | 1,6-di-iso-propyl-1,6- diaza-2,5,7,10- tetrasilacyclodecane | 290.70 |
|
290, 275, 260, 246, 232, 218, 202, 190, 174, 159 |
40 | 1-tert-butyl-1-aza-2,5- disilacyclopentane | 159.38 |
|
159, 158, 144, 128, 114, 100 |
41 | 5-tert-butyl-5-aza-1,4,6,9- tetrasilanonane | 249.65 |
|
249, 234, 228, 215, 192, 176, 158, 144, 132, 117 |
42 | 1,6-di-tert-butyl-1,6-diaza- 2,5,7,10- tetrasilacyclodecane | 318.76 |
|
318, 303, 287, 271, 261, 247, 229, 213, 203, 187 |
-
- a. providing a substrate in an ALD reactor;
- b. providing in the ALD reactor at least one organoaminosilane precursor for 6 seconds
- c. purging the ALD reactor with an inert gas for 6 seconds;
- d. providing ozone in the ALD reactor for 4 seconds;
- e. purging the ALD reactor with an inert gas for 6 seconds;
Steps b through e are repeated until a desired thickness of the film is obtained. Thickness and refractive indices of the films were measured using a FilmTek 2000SE ellipsometer by fitting the reflection data from the film to a pre-set physical model (e.g., the Lorentz Oscillator model). Wet etch rate was performed using 1% solution of 49% hydrofluoric (HF) acid in deionized water. Thermal oxide wafers were used as reference for each batch to confirm solution concentration. Typical thermal oxide wafer wet etch rate for 1% HF in H2O solution is 0.5 Å/s. Film thickness before and after etch was used to calculate wet etch rate. The thickness non-uniformity was calculated from 6-point measurements using the following equation: % non-uniformity=((max−min)/(2*mean)). Film elemental composition and density are characterized by X-Ray Photoelectron Spectroscopy (XPS). The growth rate (GPC) is determined by the thickness of the resultant film divided by total number of cycles.
TABLE 2 |
Process parameters, growth per cycle (GPC) and refractive |
index for silicon-containing film using 1-di-iso-propylamino- |
1-4-disilabutane and ozone |
Deposition | Ozone | Growth Per | ||
Temperature | concentration | Cycle | Refractive | |
Sample ID | (° C.) | (% wt) | (Å/cycle) | Index |
Ex. Film 1 | 100 | 14 | 2.7 | 1.480 |
Ex. Film 2 | 100 | 6 | 2.4 | 1.467 |
Ex. Film 3 | 100 | 19 | 2.8 | 1.466 |
Ex. Film 4 | 55 | 14 | 2.6 | 1.486 |
Ex. Film 5a | 100 | 14 | 2.7 | 1.465 |
aEx. Film 5 used a 60 second (s) evacuation time after the organoaminosilane precursor dose. |
TABLE 3 |
Film composition measured by XPS for silicon-containing film |
using 1-di-iso-propylamino-1-4-disilabutane and ozone |
dHF WER | ||||||
Sample ID | % O | % C | % Si | (Å/s) | ||
Ex. Film 1 | 67.6 | 0.8 | 32.1 | 3.3 | ||
Ex. Film 2 | 62.2 | 5.0 | 32.7 | 1.9 | ||
Ex. Film 3 | 66.8 | 1.0 | 32.2 | 4.1 | ||
Ex. Film 4 | 55.0 | 9.6 | 33.3 | 1.6 | ||
Ex. Film 5 | 66.5 | 0.9 | 32.6 | N/A | ||
-
- a. providing a substrate in an ALD reactor
- b. introducing organoaminosilane precursor: 1-di-iso-propylamino-1,4-disilabutane
- delivery conditions:
Ar carrier gas 200 sccm, precursor container was kept at room temperature - chamber pressure: 2 Torr
- precursor pulse: 1 second
- delivery conditions:
- c. inert gas purge
- argon flow: 300 sccm
- chamber pressure: 2 Torr
- purge time: 5 seconds
- d. nitrogen/argon plasma
- argon flow: 500 sccm
- nitrogen flow: 200 sccm
- chamber pressure: 2 Torr
- plasma power: 500 W
- plasma time: 5 seconds
- e. purge plasma
- argon flow: 300 sccm
- chamber pressure: 2 Torr
- purge time: 0.5 seconds
TABLE 4 |
Deposition rate, refractive index of deposited films |
and film properties using 1-di- |
iso-propylamino-1-4-disilabutane and nitrogen/argon plasma |
Deposition | O | WER | ||||
Wafer temp | Rate | Refractive | C | content | Density | in dHF |
(° C.) | (Å/cycle) | index | (%) | (%) | (g/cc) | (Å/s) |
100 | 0.41 | 1.73 | 9.6 | 16.3 | 2.0 | >33 |
300 | 0.15 | 2.02 | 4.9 | 2.4 | 2.9 | 0.8 |
-
- a. providing a substrate in an ALD reactor
- b. introducing organoaminosilane precursor: 1-di-iso-propylamino-1,4-disilabutane
- delivery conditions:
Ar carrier gas 200 sccm, precursor container was kept at room temperature - chamber pressure: 2 Torr
- precursor pulse: 1 second
- delivery conditions:
- c. inert gas purge
- argon flow: 300 sccm
- chamber pressure: 2 Torr
- purge time: 2 seconds
- d. argon plasma
- argon flow: 500 sccm
- chamber pressure: 2 Torr
- plasma power: 500 W
- plasma time: 5 seconds
- e. purge plasma
- argon flow: 300 sccm
- chamber pressure: 2 Torr
- purge time: 2 seconds
TABLE 5 |
Deposition rate, refractive index of deposited |
films and film properties 1-di-iso- |
propylamino-1-4-disilabutane and argon plasma |
WER | ||||||||
Wafer | Deposition | in | ||||||
temp | Rate | Refractive | C | O | N | Si | Density | dHF |
(° C.) | (Å/cycle) | index | (%) | (%) | (%) | (%) | (g/cc) | (Å/s) |
100 | 0.18 | 1.96 | 50.4 | 9.4 | 19.8 | 20.5 | 1.88 | <0.05 |
300 | 0.21 | 2.01 | 61.9 | 8.0 | 12.7 | 17.4 | 1.92 | <0.05 |
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Families Citing this family (243)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
KR20150036114A (en) | 2012-07-20 | 2015-04-07 | 레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | Organosilane precursors for ald/cvd silicon-containing film applications |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
TW201509799A (en) | 2013-07-19 | 2015-03-16 | Air Liquide | Hexacoordinate silicon-containing precursors for ALD/CVD silicon-containing film applications |
US9382268B1 (en) | 2013-07-19 | 2016-07-05 | American Air Liquide, Inc. | Sulfur containing organosilane precursors for ALD/CVD silicon-containing film applications |
US10453675B2 (en) * | 2013-09-20 | 2019-10-22 | Versum Materials Us, Llc | Organoaminosilane precursors and methods for depositing films comprising same |
US9233990B2 (en) | 2014-02-28 | 2016-01-12 | Air Products And Chemicals, Inc. | Organoaminosilanes and methods for making same |
WO2016007708A1 (en) * | 2014-07-10 | 2016-01-14 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Alkylamino-substituted carbosilane precursors |
JP6578353B2 (en) * | 2014-09-23 | 2019-09-18 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Carbosilane-substituted amine precursor for SI-containing film deposition and method thereof |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
WO2016094711A2 (en) | 2014-12-13 | 2016-06-16 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Organosilane precursors for ald/cvd silicon-containing film applications and methods of using the same |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US10566187B2 (en) | 2015-03-20 | 2020-02-18 | Lam Research Corporation | Ultrathin atomic layer deposition film accuracy thickness control |
JP6484478B2 (en) * | 2015-03-25 | 2019-03-13 | 株式会社Kokusai Electric | Semiconductor device manufacturing method, substrate processing apparatus, and program |
TWI706957B (en) * | 2015-03-30 | 2020-10-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | Catalyst dehydrogenative coupling of carbosilanes with ammonia, amnines and amidines |
US10763103B2 (en) * | 2015-03-31 | 2020-09-01 | Versum Materials Us, Llc | Boron-containing compounds, compositions, and methods for the deposition of a boron containing films |
US11268190B2 (en) * | 2015-06-16 | 2022-03-08 | Versum Materials Us, Llc | Processes for depositing silicon-containing films using halidosilane compounds |
US9815858B2 (en) * | 2015-06-16 | 2017-11-14 | Gelest Technologies, Inc. | Hydridosilapyrroles, hydridosilaazapyrroles, thiasilacyclopentanes, method for preparation thereof, and reaction products therefrom |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US9786492B2 (en) * | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
US9786491B2 (en) | 2015-11-12 | 2017-10-10 | Asm Ip Holding B.V. | Formation of SiOCN thin films |
KR101786230B1 (en) * | 2015-12-01 | 2017-10-18 | 주식회사 포스코 | Metal thin plate with excellent corrosion resistance and etching ability and method for manufacturing the same |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
TWI753794B (en) * | 2016-03-23 | 2022-01-21 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | Si-containing film forming compositions and methods of making and using the same |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
KR102378021B1 (en) | 2016-05-06 | 2022-03-23 | 에이에스엠 아이피 홀딩 비.브이. | Formation of SiOC thin films |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US20180033614A1 (en) * | 2016-07-27 | 2018-02-01 | Versum Materials Us, Llc | Compositions and Methods Using Same for Carbon Doped Silicon Containing Films |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
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US10822458B2 (en) * | 2017-02-08 | 2020-11-03 | Versum Materials Us, Llc | Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films |
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US10176984B2 (en) | 2017-02-14 | 2019-01-08 | Lam Research Corporation | Selective deposition of silicon oxide |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10242866B2 (en) | 2017-03-08 | 2019-03-26 | Lam Research Corporation | Selective deposition of silicon nitride on silicon oxide using catalytic control |
KR102338066B1 (en) * | 2017-03-17 | 2021-12-10 | 버슘머트리얼즈 유에스, 엘엘씨 | Selective Deposition on Silicon-Containing Surfaces |
US10847529B2 (en) | 2017-04-13 | 2020-11-24 | Asm Ip Holding B.V. | Substrate processing method and device manufactured by the same |
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JP7249952B2 (en) | 2017-05-05 | 2023-03-31 | エーエスエム アイピー ホールディング ビー.ブイ. | Plasma-enhanced deposition process for controlled formation of oxygen-containing thin films |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
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TWI784022B (en) * | 2017-07-31 | 2022-11-21 | 中國大陸商南大光電半導體材料有限公司 | 1,1,1-tris(dimethylamino)disilane and method of preparing same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
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KR102491945B1 (en) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11049714B2 (en) * | 2017-09-19 | 2021-06-29 | Versum Materials Us, Llc | Silyl substituted organoamines as precursors for high growth rate silicon-containing films |
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US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
US10460930B2 (en) | 2017-11-22 | 2019-10-29 | Lam Research Corporation | Selective growth of SiO2 on dielectric surfaces in the presence of copper |
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US11639811B2 (en) | 2017-11-27 | 2023-05-02 | Asm Ip Holding B.V. | Apparatus including a clean mini environment |
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US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
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US11098069B2 (en) | 2018-01-30 | 2021-08-24 | Versum Materials Us, Llc | Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
CN116732497A (en) | 2018-02-14 | 2023-09-12 | Asm Ip私人控股有限公司 | Method for depositing ruthenium-containing films on substrates by cyclical deposition processes |
KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11404275B2 (en) | 2018-03-02 | 2022-08-02 | Lam Research Corporation | Selective deposition using hydrolysis |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
SG10201903201XA (en) | 2018-04-11 | 2019-11-28 | Versum Materials Us Llc | Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films |
TWI811348B (en) | 2018-05-08 | 2023-08-11 | 荷蘭商Asm 智慧財產控股公司 | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
TW202013553A (en) | 2018-06-04 | 2020-04-01 | 荷蘭商Asm 智慧財產控股公司 | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR20210027265A (en) | 2018-06-27 | 2021-03-10 | 에이에스엠 아이피 홀딩 비.브이. | Periodic deposition method for forming metal-containing material and film and structure comprising metal-containing material |
WO2020002995A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
US10985010B2 (en) * | 2018-08-29 | 2021-04-20 | Versum Materials Us, Llc | Methods for making silicon and nitrogen containing films |
KR20200030162A (en) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
CN110970344A (en) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | Substrate holding apparatus, system including the same, and method of using the same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
US10943791B2 (en) * | 2018-10-31 | 2021-03-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Pattern formation method and method for manufacturing a semiconductor device |
KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
TW202037745A (en) | 2018-12-14 | 2020-10-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming device structure, structure formed by the method and system for performing the method |
TWI819180B (en) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
KR20200091543A (en) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for topologically selective film formation of silicon oxide |
KR20210114546A (en) * | 2019-02-05 | 2021-09-23 | 버슘머트리얼즈 유에스, 엘엘씨 | Deposition of carbon-doped silicon oxide |
TW202104632A (en) | 2019-02-20 | 2021-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
KR102638425B1 (en) | 2019-02-20 | 2024-02-21 | 에이에스엠 아이피 홀딩 비.브이. | Method and apparatus for filling a recess formed within a substrate surface |
KR20200102357A (en) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for plug fill deposition in 3-d nand applications |
KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
TW202100794A (en) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
KR20200108243A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200116033A (en) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
US20210017198A1 (en) | 2019-04-05 | 2021-01-21 | Versum Materials Us, Llc | Organoamino-Functionalized Cyclic Oligosiloxanes For Deposition Of Silicon-Containing Films |
KR20200123380A (en) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
JP2022530419A (en) * | 2019-04-25 | 2022-06-29 | バーサム マテリアルズ ユーエス,リミティド ライアビリティ カンパニー | Organic amino disilazanes for high temperature atomic layer deposition of silicon oxide thin films |
KR20200130118A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
KR20200141002A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Method of using a gas-phase reactor system including analyzing exhausted gas |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
JP2021015791A (en) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | Plasma device and substrate processing method using coaxial waveguide |
CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
KR20210010820A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
TW202121506A (en) | 2019-07-19 | 2021-06-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming topology-controlled amorphous carbon polymer film |
CN112309843A (en) | 2019-07-29 | 2021-02-02 | Asm Ip私人控股有限公司 | Selective deposition method for achieving high dopant doping |
CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
KR20210018759A (en) | 2019-08-05 | 2021-02-18 | 에이에스엠 아이피 홀딩 비.브이. | Liquid level sensor for a chemical source vessel |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210024420A (en) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
KR20210029090A (en) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process |
TW202129060A (en) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | Substrate processing device, and substrate processing method |
TW202115273A (en) | 2019-10-10 | 2021-04-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming a photoresist underlayer and structure including same |
KR20210045930A (en) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | Method of Topology-Selective Film Formation of Silicon Oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885693A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
JP2021090042A (en) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | Substrate processing apparatus and substrate processing method |
KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
TW202125596A (en) | 2019-12-17 | 2021-07-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
US11527403B2 (en) | 2019-12-19 | 2022-12-13 | Asm Ip Holding B.V. | Methods for filling a gap feature on a substrate surface and related semiconductor structures |
US11499014B2 (en) | 2019-12-31 | 2022-11-15 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Cureable formulations for forming low-k dielectric silicon-containing films using polycarbosilazane |
KR20210095050A (en) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
TW202130846A (en) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming structures including a vanadium or indium layer |
TW202146882A (en) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (en) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for growing phosphorous-doped silicon layer and system of the same |
US20210265158A1 (en) * | 2020-02-25 | 2021-08-26 | Asm Ip Holding B.V. | Method of forming low-k material layer, structure including the layer, and system for forming same |
KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
US11876356B2 (en) | 2020-03-11 | 2024-01-16 | Asm Ip Holding B.V. | Lockout tagout assembly and system and method of using same |
KR20220163999A (en) | 2020-04-02 | 2022-12-12 | 버슘머트리얼즈 유에스, 엘엘씨 | Organoamino-functionalized cyclic oligosiloxanes for deposition of silicon-containing films |
KR20210124042A (en) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
TW202146689A (en) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | Method for forming barrier layer and method for manufacturing semiconductor device |
TW202145344A (en) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
KR20210132605A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Vertical batch furnace assembly comprising a cooling gas supply |
KR20210132576A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming vanadium nitride-containing layer and structure comprising the same |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
KR20210141379A (en) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
KR20210143653A (en) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210145078A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
TW202201602A (en) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
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WO2023027816A1 (en) * | 2021-08-25 | 2023-03-02 | Entegris, Inc. | Silicon precursors |
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Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5622784A (en) | 1986-01-21 | 1997-04-22 | Seiko Epson Corporation | Synthetic resin ophthalmic lens having an inorganic coating |
JP2002158223A (en) | 2000-11-17 | 2002-05-31 | Tri Chemical Laboratory Inc | Material and method for forming film and element |
JP2003151972A (en) | 2001-11-15 | 2003-05-23 | Tri Chemical Laboratory Inc | Oxide film, forming method of the oxide film, semiconductor element |
US7125582B2 (en) | 2003-07-30 | 2006-10-24 | Intel Corporation | Low-temperature silicon nitride deposition |
EP1724373A1 (en) | 2005-05-16 | 2006-11-22 | Air Products and Chemicals, Inc. | Precursors for cvd silicon carbo-nitride films |
WO2009058732A1 (en) | 2007-10-29 | 2009-05-07 | Integrated Surface Technologies, Inc. | Surface coating |
US7875312B2 (en) * | 2006-05-23 | 2011-01-25 | Air Products And Chemicals, Inc. | Process for producing silicon oxide films for organoaminosilane precursors |
CN102247821A (en) | 2010-05-21 | 2011-11-23 | 月旭材料科技(上海)有限公司 | High pH tolerance chromatographic filler and preparation method thereof |
US20120003500A1 (en) | 2009-02-16 | 2012-01-05 | Mitsubishi Plastics, Inc. | Process for producing multilayered gas-barrier film |
JP2012025773A (en) | 2011-10-14 | 2012-02-09 | Maruzen Pharmaceut Co Ltd | Lipase inhibitor |
US20120128897A1 (en) | 2010-06-02 | 2012-05-24 | Air Products And Chemicals, Inc. | Organoaminosilane Precursors and Methods for Depositing Films Comprising Same |
KR20130034001A (en) | 2011-09-27 | 2013-04-04 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | Halogenated organoaminosilane precursors and methods for depositing films comprising same |
US20130224964A1 (en) | 2012-02-28 | 2013-08-29 | Asm Ip Holding B.V. | Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond |
WO2014201033A1 (en) | 2013-06-11 | 2014-12-18 | Waters Technologies Corporation | Chromatographic columns and separation devices comprising a superficially porous material; and use thereof for supercritical fluid chromatography and other chromatography |
US20150147871A1 (en) | 2013-06-26 | 2015-05-28 | Air Products And Chemicals, Inc. | Aza-polysilane precursors and methods for depositing films comprising same |
WO2016007708A1 (en) | 2014-07-10 | 2016-01-14 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Alkylamino-substituted carbosilane precursors |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1154633C (en) * | 1997-03-31 | 2004-06-23 | 大金工业株式会社 | Process for producing perfluorovinyl ethersulfonic acid derivatives and copolymer of same |
IT1301973B1 (en) * | 1998-07-31 | 2000-07-20 | Ausimont Spa | HYDRO-FLUOROALKYLVINYLETERS AND PROCEDURE FOR THEIR OBTAINING |
JP2004018454A (en) * | 2002-06-14 | 2004-01-22 | Daikin Ind Ltd | Method for producing fluorine-containing fluorosulfonylalkyl vinyl ether |
US8771807B2 (en) * | 2011-05-24 | 2014-07-08 | Air Products And Chemicals, Inc. | Organoaminosilane precursors and methods for making and using same |
JP5969253B2 (en) * | 2012-02-10 | 2016-08-17 | 東京応化工業株式会社 | Surface treatment agent and surface treatment method |
US10453675B2 (en) * | 2013-09-20 | 2019-10-22 | Versum Materials Us, Llc | Organoaminosilane precursors and methods for depositing films comprising same |
US9233990B2 (en) * | 2014-02-28 | 2016-01-12 | Air Products And Chemicals, Inc. | Organoaminosilanes and methods for making same |
JP6578353B2 (en) * | 2014-09-23 | 2019-09-18 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Carbosilane-substituted amine precursor for SI-containing film deposition and method thereof |
-
2014
- 2014-09-11 US US14/483,751 patent/US10453675B2/en active Active
- 2014-09-18 JP JP2014190075A patent/JP2015096489A/en not_active Withdrawn
- 2014-09-19 KR KR1020140125031A patent/KR101749705B1/en not_active Application Discontinuation
- 2014-09-19 TW TW104142370A patent/TWI636988B/en active
- 2014-09-19 TW TW103132507A patent/TWI535729B/en active
- 2014-09-19 TW TW105112666A patent/TWI582100B/en active
- 2014-09-19 TW TW106108209A patent/TWI652278B/en active
- 2014-09-22 CN CN201410486674.7A patent/CN104672265B/en active Active
- 2014-09-22 EP EP19194650.8A patent/EP3594219B1/en active Active
- 2014-09-22 EP EP14185776.3A patent/EP2860182B1/en active Active
- 2014-09-22 EP EP18155154.0A patent/EP3339312B1/en active Active
- 2014-09-22 EP EP16174045.1A patent/EP3095788B1/en active Active
-
2016
- 2016-06-24 KR KR1020160079301A patent/KR20160080099A/en not_active Application Discontinuation
-
2017
- 2017-01-27 JP JP2017013290A patent/JP6588480B2/en active Active
- 2017-04-05 US US15/479,893 patent/US10460929B2/en active Active
- 2017-06-15 KR KR1020170075954A patent/KR20170073562A/en active Search and Examination
-
2018
- 2018-04-20 JP JP2018081224A patent/JP6777680B2/en active Active
-
2019
- 2019-06-28 JP JP2019120928A patent/JP6928035B2/en active Active
- 2019-09-24 US US16/580,782 patent/US11139162B2/en active Active
-
2021
- 2021-08-05 JP JP2021129199A patent/JP2021185150A/en active Pending
- 2021-09-08 US US17/469,211 patent/US20210407793A1/en active Pending
-
2023
- 2023-07-14 JP JP2023115894A patent/JP2023145538A/en active Pending
Patent Citations (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5622784A (en) | 1986-01-21 | 1997-04-22 | Seiko Epson Corporation | Synthetic resin ophthalmic lens having an inorganic coating |
JP2002158223A (en) | 2000-11-17 | 2002-05-31 | Tri Chemical Laboratory Inc | Material and method for forming film and element |
JP4196246B2 (en) | 2000-11-17 | 2008-12-17 | 株式会社トリケミカル研究所 | Film forming material, film forming method, and element |
JP2003151972A (en) | 2001-11-15 | 2003-05-23 | Tri Chemical Laboratory Inc | Oxide film, forming method of the oxide film, semiconductor element |
US7125582B2 (en) | 2003-07-30 | 2006-10-24 | Intel Corporation | Low-temperature silicon nitride deposition |
EP1724373A1 (en) | 2005-05-16 | 2006-11-22 | Air Products and Chemicals, Inc. | Precursors for cvd silicon carbo-nitride films |
TW201114941A (en) | 2006-05-23 | 2011-05-01 | Air Prod & Chem | Process for producing silicon oxide films from organoaminosilane precursors |
US7875312B2 (en) * | 2006-05-23 | 2011-01-25 | Air Products And Chemicals, Inc. | Process for producing silicon oxide films for organoaminosilane precursors |
WO2009058732A1 (en) | 2007-10-29 | 2009-05-07 | Integrated Surface Technologies, Inc. | Surface coating |
US20120003500A1 (en) | 2009-02-16 | 2012-01-05 | Mitsubishi Plastics, Inc. | Process for producing multilayered gas-barrier film |
CN102247821A (en) | 2010-05-21 | 2011-11-23 | 月旭材料科技(上海)有限公司 | High pH tolerance chromatographic filler and preparation method thereof |
US20120128897A1 (en) | 2010-06-02 | 2012-05-24 | Air Products And Chemicals, Inc. | Organoaminosilane Precursors and Methods for Depositing Films Comprising Same |
KR20130034001A (en) | 2011-09-27 | 2013-04-04 | 에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 | Halogenated organoaminosilane precursors and methods for depositing films comprising same |
TW201319077A (en) | 2011-09-27 | 2013-05-16 | Air Prod & Chem | Halogenated organoaminosilane precursors and methods for depositing films comprising same |
JP2012025773A (en) | 2011-10-14 | 2012-02-09 | Maruzen Pharmaceut Co Ltd | Lipase inhibitor |
US20130224964A1 (en) | 2012-02-28 | 2013-08-29 | Asm Ip Holding B.V. | Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bond |
WO2014201033A1 (en) | 2013-06-11 | 2014-12-18 | Waters Technologies Corporation | Chromatographic columns and separation devices comprising a superficially porous material; and use thereof for supercritical fluid chromatography and other chromatography |
US20150147871A1 (en) | 2013-06-26 | 2015-05-28 | Air Products And Chemicals, Inc. | Aza-polysilane precursors and methods for depositing films comprising same |
WO2016007708A1 (en) | 2014-07-10 | 2016-01-14 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Alkylamino-substituted carbosilane precursors |
Non-Patent Citations (27)
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