JP2018524303A - ヒドリドシラピロール、ヒドリドシラアザピロール、チアシラシクロペンタン、これらを調製する方法、及びこれらからの反応生成物 - Google Patents
ヒドリドシラピロール、ヒドリドシラアザピロール、チアシラシクロペンタン、これらを調製する方法、及びこれらからの反応生成物 Download PDFInfo
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- JP2018524303A JP2018524303A JP2017564620A JP2017564620A JP2018524303A JP 2018524303 A JP2018524303 A JP 2018524303A JP 2017564620 A JP2017564620 A JP 2017564620A JP 2017564620 A JP2017564620 A JP 2017564620A JP 2018524303 A JP2018524303 A JP 2018524303A
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- hydridosilapyrrole
- hydridosilaazapyrrole
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- silicon
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- GXNIVBNTIVOURQ-UHFFFAOYSA-N 1H-azasilole Chemical compound N1[SiH]=CC=C1 GXNIVBNTIVOURQ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- HRJMZGNFLKTZPQ-UHFFFAOYSA-N 1H-1,3,2-diazasilole Chemical compound N1C=CN=[SiH]1 HRJMZGNFLKTZPQ-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 239000007795 chemical reaction product Substances 0.000 title claims description 4
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 150000001875 compounds Chemical class 0.000 claims abstract description 16
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 14
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 11
- 125000000962 organic group Chemical group 0.000 claims abstract description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 125000004122 cyclic group Chemical group 0.000 claims description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- SMDVDXOWTRMZKF-UHFFFAOYSA-N C1C[SiH2]SC1 Chemical group C1C[SiH2]SC1 SMDVDXOWTRMZKF-UHFFFAOYSA-N 0.000 claims description 5
- 150000004703 alkoxides Chemical group 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- OQSYLKFTEGTGRY-UHFFFAOYSA-N 1-butylazasilole Chemical group C(CCC)N1[SiH]=CC=C1 OQSYLKFTEGTGRY-UHFFFAOYSA-N 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 125000003118 aryl group Chemical group 0.000 claims description 2
- 239000003638 chemical reducing agent Substances 0.000 claims description 2
- 125000004185 ester group Chemical group 0.000 claims description 2
- 150000003512 tertiary amines Chemical group 0.000 claims description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 2
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- KHCHZPGCGMXNAB-UHFFFAOYSA-N 3-(azasilol-1-yl)-N,N-dimethylpropan-1-amine Chemical group CN(CCCN1[SiH]=CC=C1)C KHCHZPGCGMXNAB-UHFFFAOYSA-N 0.000 claims 1
- NQOWMUPBSKYHOX-UHFFFAOYSA-N C[Si](N1[Si](=CC=C1)C)(C)C Chemical compound C[Si](N1[Si](=CC=C1)C)(C)C NQOWMUPBSKYHOX-UHFFFAOYSA-N 0.000 claims 1
- BHHGXPLMPWCGHP-UHFFFAOYSA-N Phenethylamine Chemical group NCCC1=CC=CC=C1 BHHGXPLMPWCGHP-UHFFFAOYSA-N 0.000 claims 1
- 239000000178 monomer Substances 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 abstract description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 abstract description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 2
- 150000002391 heterocyclic compounds Chemical class 0.000 abstract 1
- 238000007142 ring opening reaction Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 12
- 238000004821 distillation Methods 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 6
- -1 dimethylaminoethyl Chemical group 0.000 description 6
- 239000002243 precursor Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000006467 substitution reaction Methods 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 4
- 239000012300 argon atmosphere Substances 0.000 description 4
- 235000011089 carbon dioxide Nutrition 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 239000012043 crude product Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- JWUJQDFVADABEY-UHFFFAOYSA-N 2-methyltetrahydrofuran Chemical compound CC1CCCO1 JWUJQDFVADABEY-UHFFFAOYSA-N 0.000 description 3
- 229910021529 ammonia Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000002480 mineral oil Substances 0.000 description 3
- 235000010446 mineral oil Nutrition 0.000 description 3
- 0 CC1C[S-](*)SC1 Chemical compound CC1C[S-](*)SC1 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical class C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- FIRQYUPQXNPTKO-UHFFFAOYSA-N ctk0i2755 Chemical compound N[SiH2]N FIRQYUPQXNPTKO-UHFFFAOYSA-N 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 239000012280 lithium aluminium hydride Substances 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 125000000168 pyrrolyl group Chemical group 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZQFDFCGUUDWKTB-UHFFFAOYSA-N 1-methylazasilole Chemical compound CN1[SiH]=CC=C1 ZQFDFCGUUDWKTB-UHFFFAOYSA-N 0.000 description 1
- LVTKZSMLKHTKTB-UHFFFAOYSA-N 2,2-dimethoxythiasilolane Chemical compound CO[Si]1(OC)CCCS1 LVTKZSMLKHTKTB-UHFFFAOYSA-N 0.000 description 1
- RELABEVEISKHGW-UHFFFAOYSA-N C(CCC)[SiH]1NCCC1.C(CCC)N1[SiH]=CC=C1 Chemical compound C(CCC)[SiH]1NCCC1.C(CCC)N1[SiH]=CC=C1 RELABEVEISKHGW-UHFFFAOYSA-N 0.000 description 1
- MFQCGXYRYYCRBR-UHFFFAOYSA-N CN(C)CCCN(CCC1)[Si]1(C)OC Chemical compound CN(C)CCCN(CCC1)[Si]1(C)OC MFQCGXYRYYCRBR-UHFFFAOYSA-N 0.000 description 1
- RSCBAYFIRUVJDK-UHFFFAOYSA-N CN(C)CCCN1[SiH+](C)CCC1 Chemical compound CN(C)CCCN1[SiH+](C)CCC1 RSCBAYFIRUVJDK-UHFFFAOYSA-N 0.000 description 1
- IQWTVAZCBGJQMO-UHFFFAOYSA-N CN(CCCN1[Si](=CC=C1)C)C Chemical compound CN(CCCN1[Si](=CC=C1)C)C IQWTVAZCBGJQMO-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- LSDPWZHWYPCBBB-UHFFFAOYSA-N Methanethiol Chemical group SC LSDPWZHWYPCBBB-UHFFFAOYSA-N 0.000 description 1
- 241001074085 Scophthalmus aquosus Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- VOSJXMPCFODQAR-UHFFFAOYSA-N ac1l3fa4 Chemical compound [SiH3]N([SiH3])[SiH3] VOSJXMPCFODQAR-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- ZZMAXCGTRRJCBX-UHFFFAOYSA-N azasilol-1-yl(trimethyl)silane Chemical compound C[Si](N1[SiH]=CC=C1)(C)C ZZMAXCGTRRJCBX-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- KCSCELQJHVLSSF-UHFFFAOYSA-N diazasilolidine Chemical compound [SiH2]1NNCC1 KCSCELQJHVLSSF-UHFFFAOYSA-N 0.000 description 1
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 238000006459 hydrosilylation reaction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- VYIRVGYSUZPNLF-UHFFFAOYSA-N n-(tert-butylamino)silyl-2-methylpropan-2-amine Chemical compound CC(C)(C)N[SiH2]NC(C)(C)C VYIRVGYSUZPNLF-UHFFFAOYSA-N 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000004819 silanols Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- CFTHARXEQHJSEH-UHFFFAOYSA-N silicon tetraiodide Chemical compound I[Si](I)(I)I CFTHARXEQHJSEH-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 description 1
- WVMSIBFANXCZKT-UHFFFAOYSA-N triethyl(hydroxy)silane Chemical compound CC[Si](O)(CC)CC WVMSIBFANXCZKT-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
- C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B21/00—Nitrogen; Compounds thereof
- C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
- C01B21/0828—Carbonitrides or oxycarbonitrides of metals, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0898—Compounds with a Si-S linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1804—Compounds having Si-O-C linkages
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/18—Compounds having one or more C—Si linkages as well as one or more C—O—Si linkages
- C07F7/1804—Compounds having Si-O-C linkages
- C07F7/1872—Preparation; Treatments not provided for in C07F7/20
- C07F7/188—Preparation; Treatments not provided for in C07F7/20 by reactions involving the formation of Si-O linkages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07B—GENERAL METHODS OF ORGANIC CHEMISTRY; APPARATUS THEREFOR
- C07B2200/00—Indexing scheme relating to specific properties of organic compounds
- C07B2200/07—Optical isomers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
[0002]本出願は、2015年6月16日に出願した、米国特許仮出願第62/180,351号の優先権を主張するものであり、この開示を参照により本明細書に援用する。
[0003]現在、半導体及び微小電気機械システム(MEMS)を含めた、ナノを特色とするデバイスのための分子層堆積に多大の関心が存在する。最低限の副生成物を有する迅速で好ましくは定量的な単分子層の堆積が望ましい。炭窒化ケイ素膜は、種々の誘電体、不活性化及びエッチング停止の応用に特に注目されている。
[0008]本発明の実施形態によるヒドリドシラピロール又はヒドリドシラアザピロールは、式(I)
[式中、Rは、ピロール環の窒素に結合された炭素又はケイ素原子を有する、置換されている又は非置換の有機基であり、R’はアルキル基である]
で表されるヒドリドシラピロール又はヒドリドシラアザピロールを製造する方法であって、ケイ素上にアルコキシド基を有する環式アザシランを還元するステップを含む方法。
[0011]本発明は、ヒドリドシラピロール(又は環式アザシリルヒドリド)及びヒドリドアザピロールとして知られている新規なクラスの環式アザシランを対象とする。ケイ素原子上にアルキル又はアルコキシ置換基を含む、知られている環式アザシランとは異なり、本発明の材料は、ケイ素原子上の置換からの炭素及び酸素の寄与を低下させる又は除去することができるヒドリドシランのクラスである。
に示されるように、ケイ素原子上にアルコキシド置換を有する対応する環式アザシランを還元することを含む。したがって、本発明の方法により製造され得るヒドリドシラピロールに関する唯一の制約は、アルコキシ含有前駆体を合成する能力である。
で表される新規なクラスのチアシラシクロペンタン化合物に関する。式(II)において、R”及びR’’’は独立に、水素又は約1〜約20個の炭素原子を含むアルキル基であり、水素又はメチルが最も好ましい。このクラスの好ましい化合物は、以下に示された1−チア−2−シラシクロペンタンであり、このクラスの好ましい及び例示的な化合物も以下に示す。
これらの構造において、R”及びR’’’は、水素又はメチルが好ましい。
から調製される。
[0027]アルゴン雰囲気下、冷却浴、機械的撹拌機、ポット温度計、添加用漏斗、及びドライアイス蒸留ヘッドを装備した2リットル4口フラスコに、2−メチルテトラヒドロフラン300mlを充填し、続いてリチウムアルミニウムヒドリド9.5g(0.25mol)を少しずつ充填した。混合物を−10℃まで冷却し、N−n−ジメチルアミノプロピル−アザ−メチルメトキシシラシクロペンタン162.3g(0.75mol)を、添加用漏斗を介して−5〜0℃の間で2時間にわたって添加した。添加の完了後、ポット混合物を0℃において約2時間維持した。鉱油260gをポットに添加した。ポット混合物を0.5mmHgにおいて80℃のポット温度でストリッピングした。粗生成物の減圧下における再蒸留により、表題化合物が得られた。b.p.:52〜4/0.5mmHg、20℃における密度:0.857、FTIR:vS−H:2111(vs)。
[0028]アルゴン雰囲気下、冷却浴、機械的撹拌機、ポット温度計、添加用漏斗、及びドライアイス蒸留ヘッドを装備した2リットル4口フラスコに、2−メチルテトラヒドロフラン400mlを充填し、続いてリチウムアルミニウムヒドリド25.3g(0.67mol)を少しずつ充填した。混合物を−10℃まで冷却し、N−トリメチルシリル−アザ−ジメトキシシラシクロペンタン203.4g(1.0mol)を、添加用漏斗を介して−5〜0℃の間で2時間にわたって添加した。添加の完了後、ポット混合物を0℃において約2時間維持した。鉱油345gをポットに添加した。ポット混合物を0.5mmHgにおいて80℃のポット温度でストリッピングした。粗生成物の減圧下における再蒸留により、表題化合物が得られた。b.p.:48〜50/10mmHg、20℃における密度:0.846、FTIR:vS−H:2120(vs)。
[0029]アルゴン雰囲気下、冷却浴、機械的撹拌機、ポット温度計、添加用漏斗、及びドライアイス蒸留ヘッドを装備した2リットル4口フラスコに、ジグリム490mlを充填し、続いてリチウムアルミニウムヒドリド27.8g(0.73mol)を少しずつ充填した。混合物を−10℃まで冷却し、2,2−ジメトキシ−1−チア−2−シラシクロペンタン200.4g(1.22mol)を、添加用漏斗を介して−5〜0℃の間で2時間にわたって添加した。添加の完了後、ポット混合物を0℃において約2時間維持した。ポット混合物を0.5mmHgにおいて80℃のポット温度でストリッピングした。粗生成物の減圧下における再蒸留により、約50%のジグリムを含む表題化合物が得られた。b.p.:55/1.2mmHg、20℃における密度:0.827、FTIR:vS−H:2140(vs)。
Claims (14)
- Rが、アルキル基、アリール基、エステル基、キラルフェネチルアミン基、トリメチルシリル基又は第三級アミン基である、請求項1に記載のヒドリドシラピロール又はヒドリドシラアザピロール。
- 前記ヒドリドシラピロールが、N−ブチル−2−シラピロールである、請求項1に記載のヒドリドシラピロール又はヒドリドシラアザピロール。
- 前記ヒドリドシラピロールが、N−(3−ジメチルアミノプロピル)−2−シラピロールである、請求項1に記載のヒドリドシラピロール又はヒドリドシラアザピロール。
- 前記ヒドリドシラピロールが、(N−トリメチルシリル−2−メチル−シラピロール)である、請求項1に記載のヒドリドシラピロール又はヒドリドシラアザピロール。
- 請求項1に記載のヒドリドシラピロール又はヒドリドシラアザピロールとシラノール、アミン及びメルカプト基との反応生成物。
- 請求項1に記載のヒドリドシラピロール又はヒドリドシラアザピロールとヒドロキシル基を有するモノマー又はポリマー化合物との反応生成物。
- 請求項1に記載のヒドリドシラピロール又はヒドリドシラアザピロールから製造された、窒化ケイ素又は炭窒化ケイ素膜。
- 請求項1に記載のヒドリドシラピロール又はヒドリドシラアザピロールを含む、レジオ選択的還元剤。
- N−t−ブトキシカルボキシ−2−シラ−5−アザ−ピロール。
- 前記チアシラシクロペンタンが、1−チア−2−シラシクロペンタンである、請求項12に記載のチアシラシクロペンタン。
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