JP2011142314A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2011142314A
JP2011142314A JP2010274248A JP2010274248A JP2011142314A JP 2011142314 A JP2011142314 A JP 2011142314A JP 2010274248 A JP2010274248 A JP 2010274248A JP 2010274248 A JP2010274248 A JP 2010274248A JP 2011142314 A JP2011142314 A JP 2011142314A
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Japan
Prior art keywords
oxide semiconductor
semiconductor layer
insulating layer
layer
electrode
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Withdrawn
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JP2010274248A
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English (en)
Japanese (ja)
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JP2011142314A5 (enExample
Inventor
Shunpei Yamazaki
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2010274248A priority Critical patent/JP2011142314A/ja
Publication of JP2011142314A publication Critical patent/JP2011142314A/ja
Publication of JP2011142314A5 publication Critical patent/JP2011142314A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP2010274248A 2009-12-11 2010-12-09 半導体装置 Withdrawn JP2011142314A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010274248A JP2011142314A (ja) 2009-12-11 2010-12-09 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009281949 2009-12-11
JP2009281949 2009-12-11
JP2010274248A JP2011142314A (ja) 2009-12-11 2010-12-09 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2012182200A Division JP5461633B2 (ja) 2009-12-11 2012-08-21 半導体装置
JP2015016956A Division JP5948448B2 (ja) 2009-12-11 2015-01-30 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2011142314A true JP2011142314A (ja) 2011-07-21
JP2011142314A5 JP2011142314A5 (enExample) 2013-12-19

Family

ID=44141911

Family Applications (12)

Application Number Title Priority Date Filing Date
JP2010274248A Withdrawn JP2011142314A (ja) 2009-12-11 2010-12-09 半導体装置
JP2012182200A Expired - Fee Related JP5461633B2 (ja) 2009-12-11 2012-08-21 半導体装置
JP2015016956A Expired - Fee Related JP5948448B2 (ja) 2009-12-11 2015-01-30 半導体装置の作製方法
JP2016041021A Active JP6096345B2 (ja) 2009-12-11 2016-03-03 半導体装置の作製方法
JP2017025689A Withdrawn JP2017085185A (ja) 2009-12-11 2017-02-15 半導体装置及び電子機器
JP2018201456A Active JP6625190B2 (ja) 2009-12-11 2018-10-26 半導体装置
JP2019212943A Active JP6824368B2 (ja) 2009-12-11 2019-11-26 半導体装置
JP2021002767A Withdrawn JP2021068915A (ja) 2009-12-11 2021-01-12 トランジスタ
JP2022003578A Withdrawn JP2022040264A (ja) 2009-12-11 2022-01-13 半導体装置
JP2023175830A Withdrawn JP2023184544A (ja) 2009-12-11 2023-10-11 半導体装置
JP2024098558A Active JP7531743B1 (ja) 2009-12-11 2024-06-19 半導体装置
JP2024123305A Active JP7776590B2 (ja) 2009-12-11 2024-07-30 半導体装置

Family Applications After (11)

Application Number Title Priority Date Filing Date
JP2012182200A Expired - Fee Related JP5461633B2 (ja) 2009-12-11 2012-08-21 半導体装置
JP2015016956A Expired - Fee Related JP5948448B2 (ja) 2009-12-11 2015-01-30 半導体装置の作製方法
JP2016041021A Active JP6096345B2 (ja) 2009-12-11 2016-03-03 半導体装置の作製方法
JP2017025689A Withdrawn JP2017085185A (ja) 2009-12-11 2017-02-15 半導体装置及び電子機器
JP2018201456A Active JP6625190B2 (ja) 2009-12-11 2018-10-26 半導体装置
JP2019212943A Active JP6824368B2 (ja) 2009-12-11 2019-11-26 半導体装置
JP2021002767A Withdrawn JP2021068915A (ja) 2009-12-11 2021-01-12 トランジスタ
JP2022003578A Withdrawn JP2022040264A (ja) 2009-12-11 2022-01-13 半導体装置
JP2023175830A Withdrawn JP2023184544A (ja) 2009-12-11 2023-10-11 半導体装置
JP2024098558A Active JP7531743B1 (ja) 2009-12-11 2024-06-19 半導体装置
JP2024123305A Active JP7776590B2 (ja) 2009-12-11 2024-07-30 半導体装置

Country Status (6)

Country Link
US (5) US8809850B2 (enExample)
JP (12) JP2011142314A (enExample)
KR (3) KR101770976B1 (enExample)
CN (2) CN102656683B (enExample)
TW (4) TWI622130B (enExample)
WO (1) WO2011070928A1 (enExample)

Cited By (26)

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CN103178826A (zh) * 2011-12-23 2013-06-26 株式会社半导体能源研究所 电平移位电路及半导体集成电路
KR20130075671A (ko) * 2011-12-27 2013-07-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP2013145876A (ja) * 2011-12-15 2013-07-25 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2013145878A (ja) * 2011-12-14 2013-07-25 Semiconductor Energy Lab Co Ltd 半導体装置、及び当該半導体装置を用いた表示装置
JP2013182998A (ja) * 2012-03-01 2013-09-12 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013236068A (ja) * 2012-04-12 2013-11-21 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
JP2013243351A (ja) * 2012-04-27 2013-12-05 Semiconductor Energy Lab Co Ltd スタンダードセル、及び半導体集積回路
JP2013251893A (ja) * 2012-05-01 2013-12-12 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
WO2013190863A1 (ja) * 2012-06-19 2013-12-27 独立行政法人産業技術総合研究所 積層型半導体装置及びその製造方法
JP2014002827A (ja) * 2012-05-25 2014-01-09 Semiconductor Energy Lab Co Ltd 記憶素子の駆動方法
JP2014057053A (ja) * 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置
JP2014057298A (ja) * 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
JP2014057296A (ja) * 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
JP2014150481A (ja) * 2013-02-04 2014-08-21 Sharp Corp 半導体装置
JP2015046592A (ja) * 2013-07-31 2015-03-12 株式会社半導体エネルギー研究所 半導体装置
US9209307B2 (en) 2013-05-20 2015-12-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2016036052A (ja) * 2012-04-25 2016-03-17 株式会社半導体エネルギー研究所 半導体装置
JP2016116230A (ja) * 2010-01-20 2016-06-23 株式会社半導体エネルギー研究所 信号処理回路
JP2016208039A (ja) * 2011-05-20 2016-12-08 株式会社半導体エネルギー研究所 半導体装置
JP2018011086A (ja) * 2012-07-27 2018-01-18 株式会社半導体エネルギー研究所 半導体装置
JP2019169737A (ja) * 2014-03-07 2019-10-03 株式会社半導体エネルギー研究所 半導体装置
JP2021101477A (ja) * 2015-04-15 2021-07-08 株式会社半導体エネルギー研究所 半導体装置
JP2022169759A (ja) * 2016-06-27 2022-11-09 株式会社半導体エネルギー研究所 トランジスタ及び半導体装置
US11923372B2 (en) 2012-02-29 2024-03-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2025017417A1 (ja) * 2023-07-14 2025-01-23 株式会社半導体エネルギー研究所 半導体装置
JP2025041780A (ja) * 2014-05-30 2025-03-26 株式会社半導体エネルギー研究所 半導体装置

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KR101813460B1 (ko) 2009-12-18 2017-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102804360B (zh) 2009-12-25 2014-12-17 株式会社半导体能源研究所 半导体装置
TWI562285B (en) * 2010-08-06 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
KR101899880B1 (ko) 2011-02-17 2018-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 ｌｓｉ
JP6109489B2 (ja) * 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 Ｅｌ表示装置
JP2021101485A (ja) * 2011-06-17 2021-07-08 株式会社半導体エネルギー研究所 液晶表示装置
US9117916B2 (en) * 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
SG10201605470SA (en) 2012-01-23 2016-08-30 Semiconductor Energy Lab Co Ltd Semiconductor device
US9104395B2 (en) 2012-05-02 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Processor and driving method thereof
JP5960000B2 (ja) * 2012-09-05 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2014239201A (ja) * 2013-05-08 2014-12-18 ソニー株式会社 半導体装置、アンテナスイッチ回路、および無線通信装置
TWI566328B (zh) * 2013-07-29 2017-01-11 高效電源轉換公司 具有用於產生附加構件之多晶矽層的氮化鎵電晶體
KR102244460B1 (ko) * 2013-10-22 2021-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
EP2884542A3 (en) * 2013-12-10 2015-09-02 IMEC vzw Integrated circuit device with power gating switch in back end of line
US9515661B2 (en) * 2014-05-09 2016-12-06 Semiconductor Energy Laboratory Co., Ltd. Circuit, semiconductor device, and clock tree
WO2015182000A1 (en) * 2014-05-30 2015-12-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and electronic device
US10930603B2 (en) 2016-03-22 2021-02-23 Taiwan Semiconductor Manufacturing Co., Ltd. Coaxial through via with novel high isolation cross coupling method for 3D integrated circuits
US9934826B2 (en) 2016-04-14 2018-04-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10504204B2 (en) 2016-07-13 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Electronic device
KR102458660B1 (ko) 2016-08-03 2022-10-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
JP7073090B2 (ja) 2016-12-28 2022-05-23 株式会社半導体エネルギー研究所 ニューラルネットワークを利用したデータ処理装置、電子部品、および電子機器
WO2018179121A1 (ja) * 2017-03-29 2018-10-04 シャープ株式会社 半導体装置および半導体装置の製造方法
US11133412B2 (en) * 2018-11-05 2021-09-28 Samsung Electronics Co., Ltd. Integrated circuit devices including vertical field-effect transistors (VFETs)
US11411081B2 (en) * 2020-04-22 2022-08-09 Globalfoundries U.S. Inc. Field effect transistor (FET) stack and methods to form same
DE112021004465T5 (de) 2020-08-27 2023-06-07 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Anzeigevorrichtung und elektronische Vorrichtung
KR102710108B1 (ko) 2021-09-24 2024-09-25 한국전자통신연구원 산화물 반도체를 포함하는 sram 소자
KR102767182B1 (ko) 2021-09-24 2025-02-14 한국전자통신연구원 산화물 반도체를 포함하는 cmos 로직 소자

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