KR101770976B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR101770976B1
KR101770976B1 KR1020127017765A KR20127017765A KR101770976B1 KR 101770976 B1 KR101770976 B1 KR 101770976B1 KR 1020127017765 A KR1020127017765 A KR 1020127017765A KR 20127017765 A KR20127017765 A KR 20127017765A KR 101770976 B1 KR101770976 B1 KR 101770976B1
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South Korea
Prior art keywords
oxide semiconductor
transistor
insulating layer
semiconductor layer
terminal
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Expired - Fee Related
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KR1020127017765A
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English (en)
Korean (ko)
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KR20120120202A (ko
Inventor
순페이 야마자키
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Geometry (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
KR1020127017765A 2009-12-11 2010-11-19 반도체 장치 Expired - Fee Related KR101770976B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009281949 2009-12-11
JPJP-P-2009-281949 2009-12-11
PCT/JP2010/071191 WO2011070928A1 (en) 2009-12-11 2010-11-19 Semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020177022155A Division KR101894821B1 (ko) 2009-12-11 2010-11-19 반도체 장치

Publications (2)

Publication Number Publication Date
KR20120120202A KR20120120202A (ko) 2012-11-01
KR101770976B1 true KR101770976B1 (ko) 2017-08-24

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020127017765A Expired - Fee Related KR101770976B1 (ko) 2009-12-11 2010-11-19 반도체 장치
KR1020177022155A Expired - Fee Related KR101894821B1 (ko) 2009-12-11 2010-11-19 반도체 장치
KR1020187024867A Active KR102046308B1 (ko) 2009-12-11 2010-11-19 반도체 장치

Family Applications After (2)

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KR1020177022155A Expired - Fee Related KR101894821B1 (ko) 2009-12-11 2010-11-19 반도체 장치
KR1020187024867A Active KR102046308B1 (ko) 2009-12-11 2010-11-19 반도체 장치

Country Status (6)

Country Link
US (5) US8809850B2 (enExample)
JP (12) JP2011142314A (enExample)
KR (3) KR101770976B1 (enExample)
CN (2) CN102656683B (enExample)
TW (4) TWI622130B (enExample)
WO (1) WO2011070928A1 (enExample)

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WO2011074392A1 (en) 2009-12-18 2011-06-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN103985760B (zh) * 2009-12-25 2017-07-18 株式会社半导体能源研究所 半导体装置
CN102804603B (zh) * 2010-01-20 2015-07-15 株式会社半导体能源研究所 信号处理电路及其驱动方法
TWI562285B (en) * 2010-08-06 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
KR101899880B1 (ko) 2011-02-17 2018-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 ｌｓｉ
JP6109489B2 (ja) * 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 Ｅｌ表示装置
KR101922397B1 (ko) * 2011-05-20 2018-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2021101485A (ja) * 2011-06-17 2021-07-08 株式会社半導体エネルギー研究所 液晶表示装置
US9117916B2 (en) 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
KR102084274B1 (ko) * 2011-12-15 2020-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
TWI580189B (zh) * 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 位準位移電路及半導體積體電路
TWI584383B (zh) * 2011-12-27 2017-05-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
KR102433736B1 (ko) 2012-01-23 2022-08-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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JP2013182998A (ja) * 2012-03-01 2013-09-12 Semiconductor Energy Lab Co Ltd 半導体装置
JP2013236068A (ja) * 2012-04-12 2013-11-21 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法
US9236408B2 (en) * 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
JP6173007B2 (ja) * 2012-04-27 2017-08-02 株式会社半導体エネルギー研究所 半導体集積回路
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JP6100076B2 (ja) 2012-05-02 2017-03-22 株式会社半導体エネルギー研究所 プロセッサ
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JP5826716B2 (ja) 2012-06-19 2015-12-02 株式会社東芝 半導体装置及びその製造方法
JP6224931B2 (ja) * 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
JP2014057298A (ja) * 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
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KR102710108B1 (ko) 2021-09-24 2024-09-25 한국전자통신연구원 산화물 반도체를 포함하는 sram 소자
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KR20170094559A (ko) 2017-08-18
JP5461633B2 (ja) 2014-04-02
JP2017085185A (ja) 2017-05-18
JP2024138162A (ja) 2024-10-07
TW201138026A (en) 2011-11-01
JP6625190B2 (ja) 2019-12-25
KR20120120202A (ko) 2012-11-01
US9508742B2 (en) 2016-11-29
JP6824368B2 (ja) 2021-02-03
JP2020038994A (ja) 2020-03-12
JP2019021936A (ja) 2019-02-07
US8901559B2 (en) 2014-12-02
JP7531743B1 (ja) 2024-08-09
JP2012256929A (ja) 2012-12-27
TWI534954B (zh) 2016-05-21
US9209251B2 (en) 2015-12-08
JP6096345B2 (ja) 2017-03-15
KR20180099941A (ko) 2018-09-05
TW201620076A (zh) 2016-06-01
JP7776590B2 (ja) 2025-11-26
JP2021068915A (ja) 2021-04-30
JP2023184544A (ja) 2023-12-28
US8809850B2 (en) 2014-08-19
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CN104600105B (zh) 2018-05-08
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