TWI622130B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI622130B
TWI622130B TW106100876A TW106100876A TWI622130B TW I622130 B TWI622130 B TW I622130B TW 106100876 A TW106100876 A TW 106100876A TW 106100876 A TW106100876 A TW 106100876A TW I622130 B TWI622130 B TW I622130B
Authority
TW
Taiwan
Prior art keywords
oxide semiconductor
layer
semiconductor layer
transistor
insulating layer
Prior art date
Application number
TW106100876A
Other languages
English (en)
Chinese (zh)
Other versions
TW201717320A (zh
Inventor
山崎舜平
Shunpei Yamazaki
Original Assignee
半導體能源研究所股份有限公司
Semiconductor Energy Laboratory Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司, Semiconductor Energy Laboratory Co., Ltd. filed Critical 半導體能源研究所股份有限公司
Publication of TW201717320A publication Critical patent/TW201717320A/zh
Application granted granted Critical
Publication of TWI622130B publication Critical patent/TWI622130B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Layout of the interconnection structure
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/01—Details
    • H03K3/012—Modifications of generator to improve response time or to decrease power consumption
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Recrystallisation Techniques (AREA)
TW106100876A 2009-12-11 2010-12-01 半導體裝置 TWI622130B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-281949 2009-12-11
JP2009281949 2009-12-11

Publications (2)

Publication Number Publication Date
TW201717320A TW201717320A (zh) 2017-05-16
TWI622130B true TWI622130B (zh) 2018-04-21

Family

ID=44141911

Family Applications (4)

Application Number Title Priority Date Filing Date
TW106100876A TWI622130B (zh) 2009-12-11 2010-12-01 半導體裝置
TW099141729A TWI529856B (zh) 2009-12-11 2010-12-01 半導體裝置
TW105105298A TWI578444B (zh) 2009-12-11 2010-12-01 半導體裝置
TW102143759A TWI534954B (zh) 2009-12-11 2010-12-01 半導體裝置

Family Applications After (3)

Application Number Title Priority Date Filing Date
TW099141729A TWI529856B (zh) 2009-12-11 2010-12-01 半導體裝置
TW105105298A TWI578444B (zh) 2009-12-11 2010-12-01 半導體裝置
TW102143759A TWI534954B (zh) 2009-12-11 2010-12-01 半導體裝置

Country Status (6)

Country Link
US (5) US8809850B2 (enExample)
JP (12) JP2011142314A (enExample)
KR (3) KR101770976B1 (enExample)
CN (2) CN102656683B (enExample)
TW (4) TWI622130B (enExample)
WO (1) WO2011070928A1 (enExample)

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KR101813460B1 (ko) 2009-12-18 2017-12-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102804360B (zh) 2009-12-25 2014-12-17 株式会社半导体能源研究所 半导体装置
CN102804603B (zh) * 2010-01-20 2015-07-15 株式会社半导体能源研究所 信号处理电路及其驱动方法
TWI562285B (en) * 2010-08-06 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing the same
KR101899880B1 (ko) 2011-02-17 2018-09-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 프로그래머블 ｌｓｉ
JP6109489B2 (ja) * 2011-05-13 2017-04-05 株式会社半導体エネルギー研究所 Ｅｌ表示装置
KR101922397B1 (ko) * 2011-05-20 2018-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2021101485A (ja) * 2011-06-17 2021-07-08 株式会社半導体エネルギー研究所 液晶表示装置
US9117916B2 (en) * 2011-10-13 2015-08-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor film
US10002968B2 (en) 2011-12-14 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device including the same
WO2013089115A1 (en) * 2011-12-15 2013-06-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI580189B (zh) * 2011-12-23 2017-04-21 半導體能源研究所股份有限公司 位準位移電路及半導體積體電路
TWI584383B (zh) * 2011-12-27 2017-05-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
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JP2013182998A (ja) * 2012-03-01 2013-09-12 Semiconductor Energy Lab Co Ltd 半導体装置
US9276121B2 (en) * 2012-04-12 2016-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US9236408B2 (en) 2012-04-25 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor device including photodiode
US20130285049A1 (en) * 2012-04-27 2013-10-31 Semiconductor Energy Laboratory Co., Ltd. Standard cell and semiconductor integrated circuit
US9007090B2 (en) * 2012-05-01 2015-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of driving semiconductor device
US9104395B2 (en) 2012-05-02 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Processor and driving method thereof
KR102164990B1 (ko) * 2012-05-25 2020-10-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 소자의 구동 방법
JP5826716B2 (ja) 2012-06-19 2015-12-02 株式会社東芝 半導体装置及びその製造方法
JP6224931B2 (ja) * 2012-07-27 2017-11-01 株式会社半導体エネルギー研究所 半導体装置
JP2014057298A (ja) * 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
TWI581404B (zh) * 2012-08-10 2017-05-01 半導體能源研究所股份有限公司 半導體裝置以及該半導體裝置的驅動方法
JP2014057296A (ja) * 2012-08-10 2014-03-27 Semiconductor Energy Lab Co Ltd 半導体装置の駆動方法
JP5960000B2 (ja) * 2012-09-05 2016-08-02 ルネサスエレクトロニクス株式会社 半導体装置及び半導体装置の製造方法
JP2014150481A (ja) * 2013-02-04 2014-08-21 Sharp Corp 半導体装置
JP2014239201A (ja) * 2013-05-08 2014-12-18 ソニー株式会社 半導体装置、アンテナスイッチ回路、および無線通信装置
KR102098795B1 (ko) 2013-05-20 2020-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI566328B (zh) * 2013-07-29 2017-01-11 高效電源轉換公司 具有用於產生附加構件之多晶矽層的氮化鎵電晶體
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JP6545976B2 (ja) * 2014-03-07 2019-07-17 株式会社半導体エネルギー研究所 半導体装置
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JP7073090B2 (ja) 2016-12-28 2022-05-23 株式会社半導体エネルギー研究所 ニューラルネットワークを利用したデータ処理装置、電子部品、および電子機器
WO2018179121A1 (ja) * 2017-03-29 2018-10-04 シャープ株式会社 半導体装置および半導体装置の製造方法
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KR102710108B1 (ko) 2021-09-24 2024-09-25 한국전자통신연구원 산화물 반도체를 포함하는 sram 소자
KR102767182B1 (ko) 2021-09-24 2025-02-14 한국전자통신연구원 산화물 반도체를 포함하는 cmos 로직 소자
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JP2016139816A (ja) 2016-08-04
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