JP2011029636A - 銅柱バンプ上の金属間化合物の接合のための方法と構造 - Google Patents

銅柱バンプ上の金属間化合物の接合のための方法と構造 Download PDF

Info

Publication number
JP2011029636A
JP2011029636A JP2010151626A JP2010151626A JP2011029636A JP 2011029636 A JP2011029636 A JP 2011029636A JP 2010151626 A JP2010151626 A JP 2010151626A JP 2010151626 A JP2010151626 A JP 2010151626A JP 2011029636 A JP2011029636 A JP 2011029636A
Authority
JP
Japan
Prior art keywords
copper
layer
diffusion barrier
barrier layer
intermetallic compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010151626A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011029636A5 (https=
Inventor
Toshinari Hayashi
俊成 林
Chen-Hua Yu
振華 余
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Original Assignee
Taiwan Semiconductor Manufacturing Co TSMC Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Manufacturing Co TSMC Ltd filed Critical Taiwan Semiconductor Manufacturing Co TSMC Ltd
Publication of JP2011029636A publication Critical patent/JP2011029636A/ja
Publication of JP2011029636A5 publication Critical patent/JP2011029636A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H10W72/223—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core characterised by the structure of the outermost layers, e.g. multilayered coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/255—Materials of outermost layers of multilayered bumps, e.g. material of a coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/24612—Composite web or sheet

Landscapes

  • Wire Bonding (AREA)
JP2010151626A 2009-07-02 2010-07-02 銅柱バンプ上の金属間化合物の接合のための方法と構造 Pending JP2011029636A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22286009P 2009-07-02 2009-07-02
US12/825,822 US8592995B2 (en) 2009-07-02 2010-06-29 Method and structure for adhesion of intermetallic compound (IMC) on Cu pillar bump

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013076744A Division JP5756140B2 (ja) 2009-07-02 2013-04-02 銅柱バンプ上の金属間化合物の接合のための方法

Publications (2)

Publication Number Publication Date
JP2011029636A true JP2011029636A (ja) 2011-02-10
JP2011029636A5 JP2011029636A5 (https=) 2012-07-05

Family

ID=43412194

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2010151626A Pending JP2011029636A (ja) 2009-07-02 2010-07-02 銅柱バンプ上の金属間化合物の接合のための方法と構造
JP2013076744A Active JP5756140B2 (ja) 2009-07-02 2013-04-02 銅柱バンプ上の金属間化合物の接合のための方法
JP2015031242A Active JP6352205B2 (ja) 2009-07-02 2015-02-20 銅柱バンプ上の金属間化合物の接合のための構造

Family Applications After (2)

Application Number Title Priority Date Filing Date
JP2013076744A Active JP5756140B2 (ja) 2009-07-02 2013-04-02 銅柱バンプ上の金属間化合物の接合のための方法
JP2015031242A Active JP6352205B2 (ja) 2009-07-02 2015-02-20 銅柱バンプ上の金属間化合物の接合のための構造

Country Status (5)

Country Link
US (1) US8592995B2 (https=)
JP (3) JP2011029636A (https=)
KR (1) KR101344553B1 (https=)
CN (1) CN101944496B (https=)
TW (1) TWI498981B (https=)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012222191A (ja) * 2011-04-11 2012-11-12 Okuno Chem Ind Co Ltd Ｌｅｄ照明ユニット
JP2013135014A (ja) * 2011-12-26 2013-07-08 Fujitsu Ltd 電子部品及び電子機器
JP2013211511A (ja) * 2012-02-29 2013-10-10 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
JP2014090001A (ja) * 2012-10-29 2014-05-15 Fujitsu Ltd 電子部品、電子部品の製造方法及び電子装置の製造方法
JP2014116367A (ja) * 2012-12-06 2014-06-26 Fujitsu Ltd 電子部品、電子装置の製造方法及び電子装置
JP2015213103A (ja) * 2014-05-01 2015-11-26 三菱電機株式会社 半導体装置およびその実装構造
JP2016032090A (ja) * 2014-07-25 2016-03-07 ▲き▼邦科技股▲分▼有限公司 基板及びその製造方法
KR20170033393A (ko) 2014-08-29 2017-03-24 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 반도체 접속의 Cu 필러용 원기둥상 형성물
JP2018166224A (ja) * 2016-12-23 2018-10-25 ルーメンス カンパニー リミテッド マイクロｌｅｄモジュール及びその製造方法
KR20210023811A (ko) 2018-06-27 2021-03-04 디아이씨 가부시끼가이샤 필러 형성용 도전 페이스트
KR20210035187A (ko) 2018-07-26 2021-03-31 디아이씨 가부시끼가이샤 도전성 페이스트를 이용한 도전성 필러의 제조 방법
KR20210047885A (ko) 2018-08-24 2021-04-30 제이에스알 가부시끼가이샤 감광 수지 조성물, 레지스트 패턴의 형성 방법, 도금 조형물의 제조 방법 및 반도체 장치
CN114367730A (zh) * 2021-12-16 2022-04-19 武汉大学 基于金刚石间接拉伸结构的金刚石/块铜衬底扩散键合工艺及结构
JP2023551456A (ja) * 2020-11-24 2023-12-08 インターナショナル・ビジネス・マシーンズ・コーポレーション はんだ接合用アンダーバンプ冶金の保護表面層
WO2024195667A1 (ja) * 2023-03-17 2024-09-26 Tdk株式会社 接合層、及び接合構造
US12449731B2 (en) 2018-12-12 2025-10-21 Isr Corporation Photosensitive resin composition, method for producing resist pattern film, and method for producing plated formed product

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI245402B (en) * 2002-01-07 2005-12-11 Megic Corp Rod soldering structure and manufacturing process thereof
TWI584434B (zh) * 2010-04-20 2017-05-21 瑞鼎科技股份有限公司 晶粒結構及晶粒接合方法
US9142533B2 (en) 2010-05-20 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate interconnections having different sizes
US8581420B2 (en) * 2010-10-18 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Under-bump metallization (UBM) structure and method of forming the same
US20120313234A1 (en) * 2011-06-10 2012-12-13 Geng-Shin Shen Qfn package and manufacturing process thereof
US10833033B2 (en) 2011-07-27 2020-11-10 Taiwan Semiconductor Manufacturing Co., Ltd. Bump structure having a side recess and semiconductor structure including the same
US8643196B2 (en) * 2011-07-27 2014-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for bump to landing trace ratio
EP2738290A1 (en) 2011-08-30 2014-06-04 Rohm and Haas Electronic Materials LLC Adhesion promotion of cyanide-free white bronze
US9219016B2 (en) * 2011-09-28 2015-12-22 Taiwan Semiconductor Manufacturing Company, Ltd. Structure design for 3DIC testing
KR101301795B1 (ko) * 2011-10-04 2013-08-29 앰코 테크놀로지 코리아 주식회사 반도체 패키지
US9786622B2 (en) * 2011-10-20 2017-10-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package
KR101359733B1 (ko) * 2011-12-16 2014-02-11 성균관대학교산학협력단 반도체 3차원 적층공정에서의 이중 확산방지층을 포함하는 범프 및 그 제조방법
CN102496584A (zh) * 2011-12-19 2012-06-13 南通富士通微电子股份有限公司 一种焊料凸点的形成方法
CN102496585A (zh) * 2011-12-19 2012-06-13 南通富士通微电子股份有限公司 一种新型圆片级封装方法
CN102496605B (zh) * 2011-12-19 2014-11-12 南通富士通微电子股份有限公司 一种圆片级封装结构
CN102496606B (zh) * 2011-12-19 2014-11-12 南通富士通微电子股份有限公司 一种高可靠圆片级柱状凸点封装结构
CN102437135A (zh) * 2011-12-19 2012-05-02 南通富士通微电子股份有限公司 圆片级柱状凸点封装结构
TWI467718B (zh) * 2011-12-30 2015-01-01 財團法人工業技術研究院 凸塊結構以及電子封裝接點結構及其製造方法
JP5966874B2 (ja) * 2012-01-27 2016-08-10 Tdk株式会社 構造体、及びそれを含む電子部品、プリント配線板
US8685790B2 (en) * 2012-02-15 2014-04-01 Freescale Semiconductor, Inc. Semiconductor device package having backside contact and method for manufacturing
US9418947B2 (en) * 2012-02-27 2016-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming connectors with a molding compound for package on package
US9425136B2 (en) 2012-04-17 2016-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Conical-shaped or tier-shaped pillar connections
US9646923B2 (en) 2012-04-17 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and packaged semiconductor devices
US9299674B2 (en) 2012-04-18 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Bump-on-trace interconnect
US9349689B2 (en) * 2012-04-20 2016-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices including conductive features with capping layers and methods of forming the same
KR101932727B1 (ko) 2012-05-07 2018-12-27 삼성전자주식회사 범프 구조물, 이를 갖는 반도체 패키지 및 이의 제조 방법
US9111817B2 (en) 2012-09-18 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structure and method of forming same
US9053990B2 (en) * 2012-10-25 2015-06-09 Taiwan Semiconductor Manufacturing Co., Ltd. Bump interconnection techniques
US8802556B2 (en) * 2012-11-14 2014-08-12 Qualcomm Incorporated Barrier layer on bump and non-wettable coating on trace
CN104903998A (zh) * 2013-01-09 2015-09-09 株式会社日立制作所 半导体装置及其制造方法
US9299680B2 (en) * 2013-03-14 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit structure having dies with connectors
US9425160B1 (en) * 2013-03-14 2016-08-23 Maxim Integrated Products, Inc. Wafer-level package device with solder bump reinforcement
JP6282454B2 (ja) * 2013-12-10 2018-02-21 新光電気工業株式会社 半導体パッケージの製造方法
JP6187226B2 (ja) * 2013-12-16 2017-08-30 富士通株式会社 電子装置の製造方法
US9735129B2 (en) 2014-03-21 2017-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor packages and methods of forming the same
US9318452B2 (en) 2014-03-21 2016-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor packages and methods of forming the same
TWI612632B (zh) * 2014-05-09 2018-01-21 矽品精密工業股份有限公司 封裝結構、晶片結構及其製法
US9520370B2 (en) 2014-05-20 2016-12-13 Micron Technology, Inc. Methods of forming semiconductor device assemblies and interconnect structures, and related semiconductor device assemblies and interconnect structures
US9875980B2 (en) 2014-05-23 2018-01-23 Amkor Technology, Inc. Copper pillar sidewall protection
US9299686B1 (en) * 2015-01-16 2016-03-29 International Business Machines Corporation Implementing integrated circuit chip attach in three dimensional stack using vapor deposited solder Cu pillars
US9443813B1 (en) 2015-03-05 2016-09-13 Advanced Semiconductor Engineering, Inc. Semiconductor device and method for manufacturing the same
US9932684B2 (en) 2015-08-06 2018-04-03 Rohm And Haas Electronic Materials Llc Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of alpha amino acids and bisepoxides
US10006136B2 (en) 2015-08-06 2018-06-26 Dow Global Technologies Llc Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of imidazole compounds, bisepoxides and halobenzyl compounds
US10100421B2 (en) 2015-08-06 2018-10-16 Dow Global Technologies Llc Method of electroplating photoresist defined features from copper electroplating baths containing reaction products of imidazole and bisepoxide compounds
TWI608132B (zh) 2015-08-06 2017-12-11 羅門哈斯電子材料有限公司 自含有吡啶基烷基胺及雙環氧化物之反應產物的銅電鍍覆浴液電鍍覆光阻劑限定之特徵的方法
KR102430984B1 (ko) * 2015-09-22 2022-08-09 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US20170162536A1 (en) * 2015-12-03 2017-06-08 International Business Machines Corporation Nanowires for pillar interconnects
KR102534735B1 (ko) 2016-09-29 2023-05-19 삼성전자 주식회사 필름형 반도체 패키지 및 그 제조 방법
US10580713B2 (en) * 2017-02-08 2020-03-03 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
US10923447B2 (en) * 2017-05-23 2021-02-16 Micron Technology, Inc. Semiconductor device assembly with die support structures
US10950568B2 (en) 2017-05-23 2021-03-16 Micron Technology, Inc. Semiconductor device assembly with surface-mount die support structures
KR102420586B1 (ko) 2017-07-24 2022-07-13 삼성전자주식회사 반도체 장치, 반도체 패키지 및 반도체 패키지의 제조 방법
US10424552B2 (en) * 2017-09-20 2019-09-24 Texas Instruments Incorporated Alloy diffusion barrier layer
JP7083648B2 (ja) * 2018-01-16 2022-06-13 株式会社アルバック 半導体装置の製造方法
JP2019134007A (ja) * 2018-01-30 2019-08-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP7122593B2 (ja) * 2018-05-08 2022-08-22 パナソニックＩｐマネジメント株式会社 半導体装置の製造方法、半導体装置の製造装置、及び半導体装置
US10847492B2 (en) * 2018-06-25 2020-11-24 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor structure and manufacturing method for the same
US10763231B2 (en) 2018-07-27 2020-09-01 Texas Instruments Incorporated Bump bond structure for enhanced electromigration performance
US11101195B2 (en) * 2018-09-18 2021-08-24 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure and method for forming the same
US10867919B2 (en) 2018-09-19 2020-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Electronic device and manufacturing method thereof
EP3703129B1 (en) * 2019-02-28 2021-10-20 Detection Technology Oy Radiation sensor element and corresponding method
TWI880925B (zh) * 2019-05-08 2025-04-21 日商石原化學股份有限公司 具備銅鍍層或銅合金鍍層的結構體
KR20220128352A (ko) 2020-01-17 2022-09-20 디아이씨 가부시끼가이샤 도전성 필러 및 그 제조 방법 그리고 접합 구조의 제조 방법
KR102766378B1 (ko) * 2020-04-09 2025-02-14 삼성전자주식회사 반도체 소자
US11502056B2 (en) * 2020-07-08 2022-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Joint structure in semiconductor package and manufacturing method thereof
CN114975143A (zh) 2021-02-22 2022-08-30 联华电子股份有限公司 半导体结构及其制作方法
US20230238345A1 (en) * 2022-01-27 2023-07-27 nD-HI Technologies Lab, Inc. High-yielding and ultrafine pitch packages for large-scale ic or advanced ic
CN118308693A (zh) * 2024-04-07 2024-07-09 江苏集萃激光智能装备有限公司 一种光学器件金属化的方法及一种利于焊接的光学器件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216185A (ja) * 1999-01-27 2000-08-04 Shinko Electric Ind Co Ltd 柱状電極付き半導体ウエハ及びその製造方法並びに半導体装置及びその製造方法
JP2001345336A (ja) * 2000-06-02 2001-12-14 Dainippon Printing Co Ltd 半導体装置の作製方法と、それに用いられる配線部材
JP2002280417A (ja) * 2001-01-15 2002-09-27 Nec Corp 半導体装置及びその製造方法並びに半導体製造装置
WO2008105589A1 (en) * 2007-02-28 2008-09-04 Nepes Corporation Bump structure for semiconductor device
WO2009031522A1 (ja) * 2007-09-04 2009-03-12 Kyocera Corporation 半導体素子およびその製造方法、ならびにその半導体素子を実装する実装構造体

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06196349A (ja) * 1992-12-24 1994-07-15 Kobe Steel Ltd タンタルコンデンサ用銅系リードフレーム材及びその製造方法
US6083633A (en) * 1997-06-16 2000-07-04 Olin Corporation Multi-layer diffusion barrier for a tin coated electrical connector
US6130479A (en) 1999-08-02 2000-10-10 International Business Machines Corporation Nickel alloy films for reduced intermetallic formation in solder
JP3444245B2 (ja) * 1999-09-03 2003-09-08 日本電気株式会社 無電解ニッケル／金メッキへのはんだ付け方法、配線構造体、回路装置及びその製造方法
US6866741B2 (en) * 2001-01-08 2005-03-15 Fujitsu Limited Method for joining large substrates
US6504242B1 (en) * 2001-11-15 2003-01-07 Intel Corporation Electronic assembly having a wetting layer on a thermally conductive heat spreader
JP4034107B2 (ja) * 2002-04-17 2008-01-16 株式会社ルネサステクノロジ 半導体装置
TW558821B (en) * 2002-05-29 2003-10-21 Via Tech Inc Under bump buffer metallurgy structure
JP2004273591A (ja) * 2003-03-06 2004-09-30 Seiko Epson Corp 半導体装置及びその製造方法
US7276801B2 (en) 2003-09-22 2007-10-02 Intel Corporation Designs and methods for conductive bumps
JP3929966B2 (ja) * 2003-11-25 2007-06-13 新光電気工業株式会社 半導体装置及びその製造方法
CN1654703A (zh) 2004-02-11 2005-08-17 富士康(昆山)电脑接插件有限公司 表面处理方法
CN1998074A (zh) * 2004-06-17 2007-07-11 德克萨斯仪器股份有限公司 具有利用电镀接触焊盘的衬底的半导体组件
US20060068218A1 (en) * 2004-09-28 2006-03-30 Hooghan Kultaransingh N Whisker-free lead frames
US7233074B2 (en) * 2005-08-11 2007-06-19 Texas Instruments Incorporated Semiconductor device with improved contacts
KR100718169B1 (ko) * 2006-01-12 2007-05-15 한국과학기술원 니켈 표면 처리된 전자부품과 무전해 니켈 표면 처리된전자부품의 접합방법
JP2007258629A (ja) * 2006-03-27 2007-10-04 Yamaha Corp チップサイズパッケージの製造方法
JP4986523B2 (ja) * 2006-07-20 2012-07-25 三洋電機株式会社 半導体装置およびその製造方法
US7919859B2 (en) * 2007-03-23 2011-04-05 Intel Corporation Copper die bumps with electromigration cap and plated solder
JP5627835B2 (ja) * 2007-11-16 2014-11-19 ローム株式会社 半導体装置および半導体装置の製造方法
JP5222714B2 (ja) * 2008-12-25 2013-06-26 株式会社四国総合研究所 非破壊検査方法と非破壊検査装置
CN102484081A (zh) * 2009-07-02 2012-05-30 弗利普芯片国际有限公司 用于垂直柱互连的方法和结构

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216185A (ja) * 1999-01-27 2000-08-04 Shinko Electric Ind Co Ltd 柱状電極付き半導体ウエハ及びその製造方法並びに半導体装置及びその製造方法
JP2001345336A (ja) * 2000-06-02 2001-12-14 Dainippon Printing Co Ltd 半導体装置の作製方法と、それに用いられる配線部材
JP2002280417A (ja) * 2001-01-15 2002-09-27 Nec Corp 半導体装置及びその製造方法並びに半導体製造装置
WO2008105589A1 (en) * 2007-02-28 2008-09-04 Nepes Corporation Bump structure for semiconductor device
WO2009031522A1 (ja) * 2007-09-04 2009-03-12 Kyocera Corporation 半導体素子およびその製造方法、ならびにその半導体素子を実装する実装構造体

Cited By (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012222191A (ja) * 2011-04-11 2012-11-12 Okuno Chem Ind Co Ltd Ｌｅｄ照明ユニット
JP2013135014A (ja) * 2011-12-26 2013-07-08 Fujitsu Ltd 電子部品及び電子機器
JP2013211511A (ja) * 2012-02-29 2013-10-10 Renesas Electronics Corp 半導体装置及び半導体装置の製造方法
JP2014090001A (ja) * 2012-10-29 2014-05-15 Fujitsu Ltd 電子部品、電子部品の製造方法及び電子装置の製造方法
JP2014116367A (ja) * 2012-12-06 2014-06-26 Fujitsu Ltd 電子部品、電子装置の製造方法及び電子装置
JP2015213103A (ja) * 2014-05-01 2015-11-26 三菱電機株式会社 半導体装置およびその実装構造
JP2016032090A (ja) * 2014-07-25 2016-03-07 ▲き▼邦科技股▲分▼有限公司 基板及びその製造方法
KR20200121923A (ko) 2014-08-29 2020-10-26 닛데쓰마이크로메탈가부시키가이샤 반도체 접속의 Cu 필러용 원기둥상 형성물
US11101234B2 (en) 2014-08-29 2021-08-24 Nippon Micrometal Corporation Cu pillar cylindrical preform for semiconductor connection
KR20180130009A (ko) 2014-08-29 2018-12-05 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 반도체 접속의 Cu 필러용 원기둥상 형성물
KR20170033393A (ko) 2014-08-29 2017-03-24 닛데쓰스미킹 마이크로 메탈 가부시키가이샤 반도체 접속의 Cu 필러용 원기둥상 형성물
JP2018166224A (ja) * 2016-12-23 2018-10-25 ルーメンス カンパニー リミテッド マイクロｌｅｄモジュール及びその製造方法
KR20210023811A (ko) 2018-06-27 2021-03-04 디아이씨 가부시끼가이샤 필러 형성용 도전 페이스트
KR20210035187A (ko) 2018-07-26 2021-03-31 디아이씨 가부시끼가이샤 도전성 페이스트를 이용한 도전성 필러의 제조 방법
KR20210047885A (ko) 2018-08-24 2021-04-30 제이에스알 가부시끼가이샤 감광 수지 조성물, 레지스트 패턴의 형성 방법, 도금 조형물의 제조 방법 및 반도체 장치
US12158700B2 (en) 2018-08-24 2024-12-03 Jsr Corporation Photosensitive resin composition, method for forming resist pattern, method for manufacturing plated molded article, and semiconductor apparatus
US12449731B2 (en) 2018-12-12 2025-10-21 Isr Corporation Photosensitive resin composition, method for producing resist pattern film, and method for producing plated formed product
JP2023551456A (ja) * 2020-11-24 2023-12-08 インターナショナル・ビジネス・マシーンズ・コーポレーション はんだ接合用アンダーバンプ冶金の保護表面層
JP7684773B2 (ja) 2020-11-24 2025-05-28 インターナショナル・ビジネス・マシーンズ・コーポレーション はんだ接合用アンダーバンプ冶金の保護表面層
CN114367730A (zh) * 2021-12-16 2022-04-19 武汉大学 基于金刚石间接拉伸结构的金刚石/块铜衬底扩散键合工艺及结构
CN114367730B (zh) * 2021-12-16 2022-11-18 武汉大学 基于金刚石间接拉伸结构的金刚石/块铜衬底扩散键合工艺及结构
WO2024195667A1 (ja) * 2023-03-17 2024-09-26 Tdk株式会社 接合層、及び接合構造

Also Published As

Publication number Publication date
JP2015135974A (ja) 2015-07-27
KR101344553B1 (ko) 2013-12-26
JP6352205B2 (ja) 2018-07-04
US8592995B2 (en) 2013-11-26
JP5756140B2 (ja) 2015-07-29
CN101944496A (zh) 2011-01-12
US20110001250A1 (en) 2011-01-06
TW201123325A (en) 2011-07-01
TWI498981B (zh) 2015-09-01
CN101944496B (zh) 2014-10-15
KR20110002816A (ko) 2011-01-10
JP2013131782A (ja) 2013-07-04

Similar Documents

Publication Publication Date Title
JP5756140B2 (ja) 銅柱バンプ上の金属間化合物の接合のための方法
US5470787A (en) Semiconductor device solder bump having intrinsic potential for forming an extended eutectic region and method for making and using the same
TWI431701B (zh) 可熔ｉ／ｏ互連系統與涉及基板安裝之柱狀凸塊的覆晶封裝方法
TWI484608B (zh) 高溫應用所用之銲錫凸塊／凸塊下金屬層結構
JP4195886B2 (ja) 無鉛はんだを用い反応バリア層を有するフリップ・チップ用相互接続構造を形成するための方法
US20040087057A1 (en) Method for fabricating a flip chip package with pillar bump and no flow underfill
US20030189260A1 (en) Flip-chip bonding structure and method thereof
JP2011258921A5 (https=)
JP2003234367A (ja) 半導体素子およびその製造方法並びに半導体装置およびその製造方法
TWI230450B (en) Under bump metallurgy structure
JP2008500181A (ja) はんだの組成物、及びはんだ接続部を製造する方法
US20080083993A1 (en) Gold-Tin Solder Joints Having Reduced Embrittlement
JP5208500B2 (ja) 組込方法及びこの方法により製造されたアセンブリ
CN106887420A (zh) 凸块构造与其构成的内连结构
WO2007097508A1 (en) Semiconductor chip with solder bump suppressing growth of inter-metallic compound and method of frabricating the same
US20090020871A1 (en) Semiconductor chip with solder bump suppressing growth of inter-metallic compound and method of fabricating the same
US20040183195A1 (en) [under bump metallurgy layer]
US20050133571A1 (en) Flip-chip solder bump formation using a wirebonder apparatus
US9601374B2 (en) Semiconductor die assembly
JP4533724B2 (ja) 接続バンプの形成方法および半導体装置の製造方法
TWI242273B (en) Bump structure
TWI262567B (en) Bumped wafer structure

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120131

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120208

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120427

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120507

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20120518

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20121205

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130402

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20130527

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20130726

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20131203

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20131210