JP5208500B2 - 組込方法及びこの方法により製造されたアセンブリ - Google Patents
組込方法及びこの方法により製造されたアセンブリ Download PDFInfo
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- JP5208500B2 JP5208500B2 JP2007512626A JP2007512626A JP5208500B2 JP 5208500 B2 JP5208500 B2 JP 5208500B2 JP 2007512626 A JP2007512626 A JP 2007512626A JP 2007512626 A JP2007512626 A JP 2007512626A JP 5208500 B2 JP5208500 B2 JP 5208500B2
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- 238000000034 method Methods 0.000 title claims description 44
- 238000001465 metallisation Methods 0.000 claims description 64
- 229910000679 solder Inorganic materials 0.000 claims description 63
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 31
- 239000010949 copper Substances 0.000 claims description 30
- 229910045601 alloy Inorganic materials 0.000 claims description 27
- 239000000956 alloy Substances 0.000 claims description 27
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 239000010931 gold Substances 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 17
- 229910000765 intermetallic Inorganic materials 0.000 claims description 14
- 229910052759 nickel Inorganic materials 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 229910052718 tin Inorganic materials 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 9
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 239000012530 fluid Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- QUQFTIVBFKLPCL-UHFFFAOYSA-L copper;2-amino-3-[(2-amino-2-carboxylatoethyl)disulfanyl]propanoate Chemical compound [Cu+2].[O-]C(=O)C(N)CSSCC(N)C([O-])=O QUQFTIVBFKLPCL-UHFFFAOYSA-L 0.000 claims 1
- 239000010410 layer Substances 0.000 description 27
- 239000011241 protective layer Substances 0.000 description 10
- 239000011133 lead Substances 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 230000008901 benefit Effects 0.000 description 7
- 238000007747 plating Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000012790 adhesive layer Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000007598 dipping method Methods 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910005887 NiSn Inorganic materials 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910008433 SnCU Inorganic materials 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910016347 CuSn Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910007116 SnPb Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229910001258 titanium gold Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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Description
前記第1のチップ(20)の表面に、錫(Sn)を含むはんだ合金(24)を有する複数の接合パッドを設けるステップであって、前記接合パッドは銅(Cu)またはアルミニウム(Al)層を有し、ニッケル(Ni)あるいは銅を含むアンダーバンプメタライゼーションを備えるものである、ステップと、
金、銅およびニッケルからなる群から選ばれた元素を有するメタライゼーションが存在する複数の接合パッドを表面に備える前記第2のチップ(30)を設けるステップと、
前記第1のチップ(20)の接合パッドの少なくとも一部とそれに対応する前記第2のチップ(30)の接合パッドが互いに対向するように前記第1及び前記第2のチップ(20,30)を組み合わせるステップと、
加熱により前記第1及び第2のチップの接合パッド間に電気的相互接続部を形成するステップと、を備え、
前記はんだ合金(24)は前記アンダーバンプメタライゼーションに流体層として与えられ、5〜20μmの高さを有し、これによりアンダーバンプメタライゼーションについて90°未満の接触角をなし、前記第2のチップのメタライゼーション及び前記はんだ合金の錫成分に基づいて金属間化合物が形成される、ことを特徴とする。
本発明の方法はアンダーバンプメタライゼーションと第2のチップのメタライゼーションとの間に挟まれた極めて薄いはんだ層を用いる。安定した相互接続を与えるため、はんだ合金及び第2のチップのメタライゼーションは、金属間化合物が両者の接合部に形成されるように選ばれる。これは最終製品と製造途中の両方に良好な信頼性をもたらす。より大きい金バンプを用いると2つの隣接するバンプが拡がり、ついには合流するという問題が起こる。はんだが少量であるという本発明の方法における長所により、このリスクは大幅に低減される。
Claims (8)
- 第1のチップ(20)を第2のチップ(30)へ組み込む方法であって、
前記第1のチップ(20)の表面に、錫(Sn)を含むはんだ合金(24)を有する複数の接合パッドを設けるステップであって、前記接合パッドは銅(Cu)またはアルミニウム(Al)層を有し、ニッケル(Ni)あるいは銅を含むアンダーバンプメタライゼーションを備えるものである、ステップと、
金、銅およびニッケルからなる群から選ばれた元素を有するメタライゼーションが存在する複数の接合パッドを表面に備える前記第2のチップ(30)を設けるステップと、
前記第1のチップ(20)の接合パッドの少なくとも一部とそれに対応する前記第2のチップ(30)の接合パッドが互いに対向するように前記第1及び前記第2のチップ(20,30)を組み合わせるステップと、
加熱により前記第1及び第2のチップの接合パッド間に電気的相互接続部を形成するステップと、を備え、
前記はんだ合金(24)は前記アンダーバンプメタライゼーションに流体層として与えられ、5〜20μmの高さを有し、これによりアンダーバンプメタライゼーションについて90°未満の接触角をなし、前記第2のチップのメタライゼーション及び前記はんだ合金の錫成分に基づいて金属間化合物が形成されることを特徴とする方法。 - 前記第2のチップ(30)のメタライゼーションは平らな表面を有することを特徴とする請求項1に記載の方法。
- 前記第1のチップ(20)は前記はんだ合金の上部に高さの大きいバンプをさらに備え、前記第1のチップは前記第2のチップを越えて側方に延びることを特徴とする請求項1に記載の方法。
- 前記第1のチップの接合パッドのアンダーバンプメタライゼーションはニッケルを有し、前記バンプは前記第1のチップを低融点Sn合金浴に浸漬することで与えられることを特徴とする請求項1に記載の方法。
- 前記第1のチップの接合パッドのアンダーバンプメタライゼーションは銅を有することを特徴とする請求項1に記載の方法。
- 前記加熱ステップは熱接着ステップであり、前記第1のチップは60℃と125℃の間の温度まで加熱され、前記第2のチップは金属間化合物の形成に適した温度まで加熱されることを特徴とする請求項1に記載の方法。
- 第1のチップ(20)を第2のチップ(30)へ組み込んだアセンブリであって、
前記第1のチップ(20)は、その表面に錫(Sn)を含むはんだ合金(24)を有する複数の接合パッドを有し、前記接合パッドは銅(Cu)またはアルミニウム(Al)層を有するとともに、ニッケル(Ni)あるいは銅を含むアンダーバンプメタライゼーションを備え、
前記第2のチップ(30)は、その表面に銅(Cu)またはアルミニウム(Al)を有する複数の接合パッドを有し、その上に金、銅およびニッケルからなる群から選ばれた元素を有するメタライゼーションを備え、
前記第1および第2のチップは、前記第1のチップ(20)の接合パッドの少なくとも一部とそれに対応する前記第2のチップ(30)の接合パッドが互いに対向するように組み込まれており、
前記はんだ合金(24)は前記アンダーバンプメタライゼーションに流体層として与えられ、5〜20μmの高さを有し、これによりアンダーバンプメタライゼーションについて90°未満の接触角をなし、
前記第1及び第2のチップの接合パッド間に形成された電気的相互接続部であって、前記電気的接続部は前記第2のチップのメタライゼーション及び前記はんだ合金の錫成分に基づいて金属間化合物が形成されている、ことを特徴とするアセンブリ。 - 前記第1のチップは前記第2のチップを越えて側方に延び、前記はんだ相互接続層の上にあるバンプを備えることを特徴とする請求項7に記載のアセンブリ。
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PCT/IB2005/051397 WO2005109503A2 (en) | 2004-05-06 | 2005-04-28 | A method of assembly and assembly thus made |
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JP2008211125A (ja) | 2007-02-28 | 2008-09-11 | Spansion Llc | 半導体装置およびその製造方法 |
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JP2012169440A (ja) * | 2011-02-14 | 2012-09-06 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
TWI575685B (zh) * | 2013-08-09 | 2017-03-21 | 矽品精密工業股份有限公司 | 半導體裝置及其製法 |
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CN104651898B (zh) * | 2015-02-09 | 2018-01-16 | 大连理工大学 | 一种金属间化合物薄膜的制备方法 |
FR3033272B1 (fr) * | 2015-03-04 | 2017-03-24 | Labinal Power Systems | Procede de brasage pour assembler deux elements via un compose intermetallique |
TWI582916B (zh) * | 2015-04-27 | 2017-05-11 | 南茂科技股份有限公司 | 多晶片封裝結構、晶圓級晶片封裝結構及其製程 |
US9842818B2 (en) | 2016-03-28 | 2017-12-12 | Intel Corporation | Variable ball height on ball grid array packages by solder paste transfer |
US10304799B2 (en) | 2016-12-28 | 2019-05-28 | Intel Corporation | Land grid array package extension |
CN108323009A (zh) * | 2018-01-11 | 2018-07-24 | 南昌黑鲨科技有限公司 | 器件结构及器件布局 |
CN108808440A (zh) * | 2018-06-11 | 2018-11-13 | 湖北航星光电科技股份有限公司 | 一种eml器件封装中芯片与基板电互连的结构及制法 |
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JPH025455A (ja) | 1988-06-24 | 1990-01-10 | Hitachi Ltd | チップオンチップの半導体装置 |
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