JP2009503815A5 - - Google Patents

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Publication number
JP2009503815A5
JP2009503815A5 JP2008522820A JP2008522820A JP2009503815A5 JP 2009503815 A5 JP2009503815 A5 JP 2009503815A5 JP 2008522820 A JP2008522820 A JP 2008522820A JP 2008522820 A JP2008522820 A JP 2008522820A JP 2009503815 A5 JP2009503815 A5 JP 2009503815A5
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Japan
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layer
etch stop
stop layer
gate
nitride base
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JP2008522820A
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Japanese (ja)
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JP2009503815A (ja
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Priority claimed from US11/185,398 external-priority patent/US20070018199A1/en
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JP2008522820A 2005-07-20 2006-07-12 窒化物ベースのトランジスタおよびエッチストップ層を用いた製造方法 Pending JP2009503815A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/185,398 US20070018199A1 (en) 2005-07-20 2005-07-20 Nitride-based transistors and fabrication methods with an etch stop layer
PCT/US2006/026952 WO2007018918A2 (en) 2005-07-20 2006-07-12 Nitride-based transistors and fabrication methods with an etch stop layer

Related Child Applications (1)

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JP2013147350A Division JP2014003301A (ja) 2005-07-20 2013-07-16 窒化物ベースのトランジスタおよびエッチストップ層を用いた製造方法

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JP2009503815A JP2009503815A (ja) 2009-01-29
JP2009503815A5 true JP2009503815A5 (enExample) 2012-02-16

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JP2008522820A Pending JP2009503815A (ja) 2005-07-20 2006-07-12 窒化物ベースのトランジスタおよびエッチストップ層を用いた製造方法
JP2013147350A Pending JP2014003301A (ja) 2005-07-20 2013-07-16 窒化物ベースのトランジスタおよびエッチストップ層を用いた製造方法

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US (2) US20070018199A1 (enExample)
EP (2) EP1905097B1 (enExample)
JP (2) JP2009503815A (enExample)
WO (1) WO2007018918A2 (enExample)

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