CN103187451B - 薄膜晶体管 - Google Patents
薄膜晶体管 Download PDFInfo
- Publication number
- CN103187451B CN103187451B CN201210000096.2A CN201210000096A CN103187451B CN 103187451 B CN103187451 B CN 103187451B CN 201210000096 A CN201210000096 A CN 201210000096A CN 103187451 B CN103187451 B CN 103187451B
- Authority
- CN
- China
- Prior art keywords
- etch stop
- stop layer
- layer
- source electrode
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010409 thin film Substances 0.000 title claims abstract description 28
- 238000009413 insulation Methods 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910004205 SiNX Inorganic materials 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910017107 AlOx Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 230000027756 respiratory electron transport chain Effects 0.000 abstract description 7
- 238000009792 diffusion process Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
Abstract
Description
薄膜晶体管 | 100、200 |
基板 | 110 |
栅极 | 120 |
栅绝缘层 | 130 |
沟道层 | 140 |
源极 | 141 |
漏极 | 142 |
源极电极 | 150 |
漏极电极 | 160 |
本体部 | 151、161 |
第一延伸部 | 152、162 |
第二延伸部 | 153、163 |
第一蚀刻阻挡层 | 170 |
第二蚀刻阻挡层 | 180 |
凹槽 | 181 |
第一区域 | 182 |
第二区域 | 183 |
第一透明导电层 | 191 |
第二透明导电层 | 192 |
第一开孔 | 210 |
第二开孔 | 220 |
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210000096.2A CN103187451B (zh) | 2012-01-03 | 2012-01-03 | 薄膜晶体管 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210000096.2A CN103187451B (zh) | 2012-01-03 | 2012-01-03 | 薄膜晶体管 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103187451A CN103187451A (zh) | 2013-07-03 |
CN103187451B true CN103187451B (zh) | 2017-04-05 |
Family
ID=48678537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210000096.2A Active CN103187451B (zh) | 2012-01-03 | 2012-01-03 | 薄膜晶体管 |
Country Status (1)
Country | Link |
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CN (1) | CN103187451B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106298950B (zh) * | 2015-04-14 | 2019-06-18 | 鸿富锦精密工业(深圳)有限公司 | 薄膜晶体管及其制造方法 |
CN104952932A (zh) * | 2015-05-29 | 2015-09-30 | 合肥鑫晟光电科技有限公司 | 薄膜晶体管、阵列基板及其制作方法、显示装置 |
CN106024641B (zh) * | 2016-07-29 | 2019-12-27 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板、其制作方法及显示装置 |
CN114709251A (zh) * | 2022-03-17 | 2022-07-05 | Tcl华星光电技术有限公司 | 一种薄膜晶体管及其制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1909248A (zh) * | 2005-08-02 | 2007-02-07 | 中华映管股份有限公司 | 薄膜晶体管及其制造方法 |
CN101281913A (zh) * | 2005-02-17 | 2008-10-08 | 株式会社神户制钢所 | 显示器和用于制备该显示器的溅射靶 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3746924B2 (ja) * | 1999-08-26 | 2006-02-22 | 鹿児島日本電気株式会社 | 液晶表示装置のアクティブパネルの製造方法 |
TW595005B (en) * | 2003-08-04 | 2004-06-21 | Au Optronics Corp | Thin film transistor and pixel structure with the same |
US20070018199A1 (en) * | 2005-07-20 | 2007-01-25 | Cree, Inc. | Nitride-based transistors and fabrication methods with an etch stop layer |
CN101582447B (zh) * | 2008-05-14 | 2010-09-29 | 清华大学 | 薄膜晶体管 |
KR101516415B1 (ko) * | 2008-09-04 | 2015-05-04 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판, 이의 제조 방법, 및 이를 갖는 표시장치 |
US8759917B2 (en) * | 2010-01-04 | 2014-06-24 | Samsung Electronics Co., Ltd. | Thin-film transistor having etch stop multi-layer and method of manufacturing the same |
-
2012
- 2012-01-03 CN CN201210000096.2A patent/CN103187451B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101281913A (zh) * | 2005-02-17 | 2008-10-08 | 株式会社神户制钢所 | 显示器和用于制备该显示器的溅射靶 |
CN1909248A (zh) * | 2005-08-02 | 2007-02-07 | 中华映管股份有限公司 | 薄膜晶体管及其制造方法 |
Also Published As
Publication number | Publication date |
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CN103187451A (zh) | 2013-07-03 |
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Effective date of registration: 20160829 Address after: 100086 Beijing city Haidian District North Sanhuan Road 43, Tsing Wun contemporary building 12A11 Applicant after: BEIJING ZHITAO SCIENCE & TECHNOLOGY CO., LTD. Address before: 518109 Guangdong city of Shenzhen province Baoan District Longhua Town Industrial Zone tabulaeformis tenth East Ring Road No. 2 two Applicant before: Hongfujin Precise Industry (Shenzhen) Co., Ltd. Applicant before: Hon Hai Precision Industry Co., Ltd. |
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Inventor after: Guan Wei Inventor before: Zeng Jianxin |
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Effective date of registration: 20161222 Address after: 321105 Zhejiang city in Lanxi Province town of Zhuge Village Village No. 35 tube tube Applicant after: Guan Wei Address before: 100086 Beijing city Haidian District North Sanhuan Road 43, Tsing Wun contemporary building 12A11 Applicant before: BEIJING ZHITAO SCIENCE & TECHNOLOGY CO., LTD. |
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Effective date of registration: 20180720 Address after: 510000 4 building, A building, Chong Zheng Industrial Zone 166, four yuan, Nan Yuan Hang four, Baiyun District, Guangdong. Patentee after: Guangzhou pine ran Electronic Technology Co., Ltd. Address before: 321105 village 35, Guan Cun Cun Guan, Zhuge Town, Lanxi, Zhejiang Patentee before: Guan Wei |
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Effective date of registration: 20191216 Address after: Room 207, main office building, No.118 Longxing Road, Haining Economic Development Zone, Haining City, Jiaxing City, Zhejiang Province Patentee after: Haining Economic Development Industrial Park Development and Construction Co., Ltd Address before: 510000 4 building, A building, Chong Zheng Industrial Zone 166, four yuan, Nan Yuan Hang four, Baiyun District, Guangdong. Patentee before: Guangzhou pine ran Electronic Technology Co., Ltd. |
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