JP2003192492A5 - - Google Patents

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Publication number
JP2003192492A5
JP2003192492A5 JP2002303232A JP2002303232A JP2003192492A5 JP 2003192492 A5 JP2003192492 A5 JP 2003192492A5 JP 2002303232 A JP2002303232 A JP 2002303232A JP 2002303232 A JP2002303232 A JP 2002303232A JP 2003192492 A5 JP2003192492 A5 JP 2003192492A5
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JP
Japan
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JP2002303232A
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Japanese (ja)
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JP2003192492A (ja
JP4299523B2 (ja
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Publication of JP2003192492A5 publication Critical patent/JP2003192492A5/ja
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JP2002303232A 1997-04-09 2002-10-17 低欠陥密度の空孔優勢シリコン Expired - Fee Related JP4299523B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US4184597P 1997-04-09 1997-04-09
US60/041,845 1997-04-09

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP54318198A Division JP3544676B2 (ja) 1997-04-09 1998-04-09 単結晶シリコンインゴットの製造方法

Publications (3)

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JP2003192492A JP2003192492A (ja) 2003-07-09
JP2003192492A5 true JP2003192492A5 (enExample) 2005-06-23
JP4299523B2 JP4299523B2 (ja) 2009-07-22

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ID=21918645

Family Applications (9)

Application Number Title Priority Date Filing Date
JP54318998A Expired - Lifetime JP3449731B2 (ja) 1997-04-09 1998-04-09 単結晶シリコンインゴットを製造する方法
JP54318198A Expired - Fee Related JP3544676B2 (ja) 1997-04-09 1998-04-09 単結晶シリコンインゴットの製造方法
JP54318298A Expired - Fee Related JP3449730B2 (ja) 1997-04-09 1998-04-09 単結晶シリコンインゴットを製造する方法
JP2002303285A Expired - Lifetime JP4291559B2 (ja) 1997-04-09 2002-10-17 低欠陥密度シリコン
JP2002303232A Expired - Fee Related JP4299523B2 (ja) 1997-04-09 2002-10-17 低欠陥密度の空孔優勢シリコン
JP2002303272A Expired - Fee Related JP3782387B2 (ja) 1997-04-09 2002-10-17 低欠陥密度の自己格子間物優勢シリコンを製造する方法
JP2004054483A Expired - Fee Related JP4274973B2 (ja) 1997-04-09 2004-02-27 低欠陥密度の空孔優勢シリコンウエハおよびインゴット
JP2005309456A Expired - Lifetime JP4313356B2 (ja) 1997-04-09 2005-10-25 低欠陥密度シリコン
JP2005318604A Expired - Fee Related JP4477569B2 (ja) 1997-04-09 2005-11-01 低欠陥密度の空孔優勢シリコンウエハおよびインゴット

Family Applications Before (4)

Application Number Title Priority Date Filing Date
JP54318998A Expired - Lifetime JP3449731B2 (ja) 1997-04-09 1998-04-09 単結晶シリコンインゴットを製造する方法
JP54318198A Expired - Fee Related JP3544676B2 (ja) 1997-04-09 1998-04-09 単結晶シリコンインゴットの製造方法
JP54318298A Expired - Fee Related JP3449730B2 (ja) 1997-04-09 1998-04-09 単結晶シリコンインゴットを製造する方法
JP2002303285A Expired - Lifetime JP4291559B2 (ja) 1997-04-09 2002-10-17 低欠陥密度シリコン

Family Applications After (4)

Application Number Title Priority Date Filing Date
JP2002303272A Expired - Fee Related JP3782387B2 (ja) 1997-04-09 2002-10-17 低欠陥密度の自己格子間物優勢シリコンを製造する方法
JP2004054483A Expired - Fee Related JP4274973B2 (ja) 1997-04-09 2004-02-27 低欠陥密度の空孔優勢シリコンウエハおよびインゴット
JP2005309456A Expired - Lifetime JP4313356B2 (ja) 1997-04-09 2005-10-25 低欠陥密度シリコン
JP2005318604A Expired - Fee Related JP4477569B2 (ja) 1997-04-09 2005-11-01 低欠陥密度の空孔優勢シリコンウエハおよびインゴット

Country Status (10)

Country Link
US (11) US6287380B1 (enExample)
EP (7) EP1209258B1 (enExample)
JP (9) JP3449731B2 (enExample)
KR (6) KR20010006227A (enExample)
CN (7) CN1280455C (enExample)
DE (7) DE69813041T2 (enExample)
MY (6) MY120036A (enExample)
SG (3) SG105509A1 (enExample)
TW (3) TW494146B (enExample)
WO (3) WO1998045510A1 (enExample)

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* Cited by examiner, † Cited by third party
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