HK1091272A1 - Environmental system including a transport region for an immersion lithography apparatus - Google Patents
Environmental system including a transport region for an immersion lithography apparatusInfo
- Publication number
- HK1091272A1 HK1091272A1 HK06111866.2A HK06111866A HK1091272A1 HK 1091272 A1 HK1091272 A1 HK 1091272A1 HK 06111866 A HK06111866 A HK 06111866A HK 1091272 A1 HK1091272 A1 HK 1091272A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- system including
- transport region
- lithography apparatus
- immersion lithography
- environmental system
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B27/00—Photographic printing apparatus
- G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
- G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
- G03B27/426—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original in enlargers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
- G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/703—Gap setting, e.g. in proximity printer
Landscapes
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Environmental & Geological Engineering (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46211203P | 2003-04-10 | 2003-04-10 | |
US48503303P | 2003-07-02 | 2003-07-02 | |
PCT/US2004/009994 WO2004092833A2 (en) | 2003-04-10 | 2004-04-01 | Environmental system including a transport region for an immersion lithography apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1091272A1 true HK1091272A1 (en) | 2007-01-12 |
Family
ID=33303064
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK06111866.2A HK1091272A1 (en) | 2003-04-10 | 2006-10-27 | Environmental system including a transport region for an immersion lithography apparatus |
HK18112453.5A HK1253211A1 (zh) | 2003-04-10 | 2018-09-27 | 包括用於沉浸式光刻裝置的傳送區的環境系統 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK18112453.5A HK1253211A1 (zh) | 2003-04-10 | 2018-09-27 | 包括用於沉浸式光刻裝置的傳送區的環境系統 |
Country Status (7)
Country | Link |
---|---|
US (11) | US7251017B2 (xx) |
EP (3) | EP3352015A1 (xx) |
JP (10) | JP4650413B2 (xx) |
KR (9) | KR20140139139A (xx) |
CN (1) | CN101813892B (xx) |
HK (2) | HK1091272A1 (xx) |
WO (1) | WO2004092833A2 (xx) |
Families Citing this family (183)
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---|---|---|---|---|
US9482966B2 (en) | 2002-11-12 | 2016-11-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP3953460B2 (ja) | 2002-11-12 | 2007-08-08 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影装置 |
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WO2005006417A1 (ja) * | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
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US7369217B2 (en) * | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
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US7411653B2 (en) | 2003-10-28 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus |
US7352433B2 (en) | 2003-10-28 | 2008-04-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4605014B2 (ja) | 2003-10-28 | 2011-01-05 | 株式会社ニコン | 露光装置、露光方法、デバイスの製造方法 |
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US7394521B2 (en) | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2005191394A (ja) * | 2003-12-26 | 2005-07-14 | Canon Inc | 露光方法及び装置 |
JP4843503B2 (ja) * | 2004-01-20 | 2011-12-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置および投影レンズのための測定装置 |
US7697110B2 (en) | 2004-01-26 | 2010-04-13 | Nikon Corporation | Exposure apparatus and device manufacturing method |
US7589822B2 (en) | 2004-02-02 | 2009-09-15 | Nikon Corporation | Stage drive method and stage unit, exposure apparatus, and device manufacturing method |
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US7898642B2 (en) * | 2004-04-14 | 2011-03-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8488099B2 (en) * | 2004-04-19 | 2013-07-16 | Nikon Corporation | Exposure apparatus and device manufacturing method |
EP1747499A2 (en) | 2004-05-04 | 2007-01-31 | Nikon Corporation | Apparatus and method for providing fluid for immersion lithography |
US7616383B2 (en) | 2004-05-18 | 2009-11-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20070103661A1 (en) * | 2004-06-04 | 2007-05-10 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US20070216889A1 (en) * | 2004-06-04 | 2007-09-20 | Yasufumi Nishii | Exposure Apparatus, Exposure Method, and Method for Producing Device |
US7796274B2 (en) | 2004-06-04 | 2010-09-14 | Carl Zeiss Smt Ag | System for measuring the image quality of an optical imaging system |
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CN101685269B (zh) | 2004-06-10 | 2011-09-14 | 尼康股份有限公司 | 曝光装置及元件制造方法 |
US8373843B2 (en) | 2004-06-10 | 2013-02-12 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
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US8717533B2 (en) | 2004-06-10 | 2014-05-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US7463330B2 (en) | 2004-07-07 | 2008-12-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8384874B2 (en) | 2004-07-12 | 2013-02-26 | Nikon Corporation | Immersion exposure apparatus and device manufacturing method to detect if liquid on base member |
JP4983257B2 (ja) | 2004-08-18 | 2012-07-25 | 株式会社ニコン | 露光装置、デバイス製造方法、計測部材、及び計測方法 |
US7701550B2 (en) | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
SG188914A1 (en) | 2004-09-17 | 2013-04-30 | Nikon Corp | Exposure apparatus, exposure method, and method for manufacturing device |
WO2006030908A1 (ja) * | 2004-09-17 | 2006-03-23 | Nikon Corporation | 基板保持装置、露光装置、及びデバイス製造方法 |
US7522261B2 (en) * | 2004-09-24 | 2009-04-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
TWI416265B (zh) * | 2004-11-01 | 2013-11-21 | 尼康股份有限公司 | A method of manufacturing an exposure apparatus and an element |
US7423720B2 (en) | 2004-11-12 | 2008-09-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7411657B2 (en) | 2004-11-17 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7446850B2 (en) * | 2004-12-03 | 2008-11-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7196770B2 (en) | 2004-12-07 | 2007-03-27 | Asml Netherlands B.V. | Prewetting of substrate before immersion exposure |
US7397533B2 (en) * | 2004-12-07 | 2008-07-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7365827B2 (en) | 2004-12-08 | 2008-04-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7352440B2 (en) | 2004-12-10 | 2008-04-01 | Asml Netherlands B.V. | Substrate placement in immersion lithography |
US7403261B2 (en) | 2004-12-15 | 2008-07-22 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7880860B2 (en) | 2004-12-20 | 2011-02-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7528931B2 (en) | 2004-12-20 | 2009-05-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7405805B2 (en) | 2004-12-28 | 2008-07-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7491661B2 (en) | 2004-12-28 | 2009-02-17 | Asml Netherlands B.V. | Device manufacturing method, top coat material and substrate |
SG124359A1 (en) | 2005-01-14 | 2006-08-30 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
KR101942138B1 (ko) * | 2005-01-31 | 2019-01-24 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US8692973B2 (en) | 2005-01-31 | 2014-04-08 | Nikon Corporation | Exposure apparatus and method for producing device |
KR101140755B1 (ko) | 2005-02-10 | 2012-05-03 | 에이에스엠엘 네델란즈 비.브이. | 침지 액체, 노광 장치, 및 노광 프로세스 |
US7378025B2 (en) | 2005-02-22 | 2008-05-27 | Asml Netherlands B.V. | Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method |
US7224431B2 (en) | 2005-02-22 | 2007-05-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8018573B2 (en) | 2005-02-22 | 2011-09-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7428038B2 (en) | 2005-02-28 | 2008-09-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid |
US7282701B2 (en) | 2005-02-28 | 2007-10-16 | Asml Netherlands B.V. | Sensor for use in a lithographic apparatus |
US7324185B2 (en) | 2005-03-04 | 2008-01-29 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7684010B2 (en) | 2005-03-09 | 2010-03-23 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing |
US7330238B2 (en) | 2005-03-28 | 2008-02-12 | Asml Netherlands, B.V. | Lithographic apparatus, immersion projection apparatus and device manufacturing method |
US7411654B2 (en) | 2005-04-05 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
USRE43576E1 (en) | 2005-04-08 | 2012-08-14 | Asml Netherlands B.V. | Dual stage lithographic apparatus and device manufacturing method |
US7291850B2 (en) | 2005-04-08 | 2007-11-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20060232753A1 (en) | 2005-04-19 | 2006-10-19 | Asml Holding N.V. | Liquid immersion lithography system with tilted liquid flow |
US8248577B2 (en) | 2005-05-03 | 2012-08-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN100445872C (zh) * | 2005-05-09 | 2008-12-24 | 浙江大学 | 浸没式光刻系统中的液体传送及气密封装置 |
US7652746B2 (en) | 2005-06-21 | 2010-01-26 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7834974B2 (en) | 2005-06-28 | 2010-11-16 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7474379B2 (en) | 2005-06-28 | 2009-01-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8054445B2 (en) | 2005-08-16 | 2011-11-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7751026B2 (en) * | 2005-08-25 | 2010-07-06 | Nikon Corporation | Apparatus and method for recovering fluid for immersion lithography |
WO2007026573A1 (ja) * | 2005-08-29 | 2007-03-08 | Mitsui Chemicals, Inc. | 液浸式露光用液体および液浸式露光方法 |
US20070058263A1 (en) * | 2005-09-13 | 2007-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and methods for immersion lithography |
US7411658B2 (en) | 2005-10-06 | 2008-08-12 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2007055373A1 (ja) | 2005-11-14 | 2007-05-18 | Nikon Corporation | 液体回収部材、露光装置、露光方法、及びデバイス製造方法 |
US7864292B2 (en) | 2005-11-16 | 2011-01-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7804577B2 (en) | 2005-11-16 | 2010-09-28 | Asml Netherlands B.V. | Lithographic apparatus |
US7633073B2 (en) | 2005-11-23 | 2009-12-15 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7773195B2 (en) | 2005-11-29 | 2010-08-10 | Asml Holding N.V. | System and method to increase surface tension and contact angle in immersion lithography |
US7420194B2 (en) | 2005-12-27 | 2008-09-02 | Asml Netherlands B.V. | Lithographic apparatus and substrate edge seal |
US7649611B2 (en) | 2005-12-30 | 2010-01-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8045134B2 (en) | 2006-03-13 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus, control system and device manufacturing method |
JP4889331B2 (ja) * | 2006-03-22 | 2012-03-07 | 大日本スクリーン製造株式会社 | 基板処理装置および基板処理方法 |
KR20080108341A (ko) | 2006-04-03 | 2008-12-12 | 가부시키가이샤 니콘 | 액침 액체에 대해 소용매성인 입사면 및 광학 윈도우 |
US9477158B2 (en) | 2006-04-14 | 2016-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN101438385B (zh) * | 2006-05-10 | 2011-02-16 | 尼康股份有限公司 | 曝光装置及元件制造方法 |
EP2991101B1 (en) | 2006-08-31 | 2017-04-12 | Nikon Corporation | Exposure method and apparatus, and device manufacturing method |
KR101638306B1 (ko) | 2006-08-31 | 2016-07-08 | 가부시키가이샤 니콘 | 이동체 구동 시스템 및 이동체 구동 방법, 패턴 형성 장치 및 방법, 노광 장치 및 방법, 디바이스 제조 방법, 그리고 결정 방법 |
SG10201507256WA (en) | 2006-08-31 | 2015-10-29 | Nikon Corp | Movable Body Drive Method And Movable Body Drive System, Pattern Formation Method And Apparatus, Exposure Method And Apparatus, And Device Manufacturing Method |
KR20180058861A (ko) | 2006-09-01 | 2018-06-01 | 가부시키가이샤 니콘 | 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법 |
KR101770082B1 (ko) | 2006-09-01 | 2017-08-21 | 가부시키가이샤 니콘 | 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 디바이스 제조 방법, 그리고 캘리브레이션 방법 |
US7826030B2 (en) * | 2006-09-07 | 2010-11-02 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP5029870B2 (ja) * | 2006-11-13 | 2012-09-19 | 株式会社ニコン | 露光方法及び装置、液浸部材、露光装置のメンテナンス方法、並びにデバイス製造方法 |
US8045135B2 (en) | 2006-11-22 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus with a fluid combining unit and related device manufacturing method |
US20080156356A1 (en) * | 2006-12-05 | 2008-07-03 | Nikon Corporation | Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method |
US9632425B2 (en) | 2006-12-07 | 2017-04-25 | Asml Holding N.V. | Lithographic apparatus, a dryer and a method of removing liquid from a surface |
US8634053B2 (en) | 2006-12-07 | 2014-01-21 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8004651B2 (en) | 2007-01-23 | 2011-08-23 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
US8237911B2 (en) | 2007-03-15 | 2012-08-07 | Nikon Corporation | Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine |
US20080225248A1 (en) * | 2007-03-15 | 2008-09-18 | Nikon Corporation | Apparatus, systems and methods for removing liquid from workpiece during workpiece processing |
US7763869B2 (en) * | 2007-03-23 | 2010-07-27 | Asm Japan K.K. | UV light irradiating apparatus with liquid filter |
US20080231823A1 (en) * | 2007-03-23 | 2008-09-25 | Nikon Corporation | Apparatus and methods for reducing the escape of immersion liquid from immersion lithography apparatus |
US8134685B2 (en) | 2007-03-23 | 2012-03-13 | Nikon Corporation | Liquid recovery system, immersion exposure apparatus, immersion exposing method, and device fabricating method |
US8068209B2 (en) * | 2007-03-23 | 2011-11-29 | Nikon Corporation | Nozzle to help reduce the escape of immersion liquid from an immersion lithography tool |
US7841352B2 (en) | 2007-05-04 | 2010-11-30 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US8947629B2 (en) | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US8300207B2 (en) * | 2007-05-17 | 2012-10-30 | Nikon Corporation | Exposure apparatus, immersion system, exposing method, and device fabricating method |
US20090122282A1 (en) * | 2007-05-21 | 2009-05-14 | Nikon Corporation | Exposure apparatus, liquid immersion system, exposing method, and device fabricating method |
US7576833B2 (en) | 2007-06-28 | 2009-08-18 | Nikon Corporation | Gas curtain type immersion lithography tool using porous material for fluid removal |
US7966743B2 (en) * | 2007-07-31 | 2011-06-28 | Eastman Kodak Company | Micro-structured drying for inkjet printers |
JP4533416B2 (ja) * | 2007-09-25 | 2010-09-01 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
SG151198A1 (en) | 2007-09-27 | 2009-04-30 | Asml Netherlands Bv | Methods relating to immersion lithography and an immersion lithographic apparatus |
US8289497B2 (en) * | 2008-03-18 | 2012-10-16 | Nikon Corporation | Apparatus and methods for recovering fluid in immersion lithography |
US8233139B2 (en) * | 2008-03-27 | 2012-07-31 | Nikon Corporation | Immersion system, exposure apparatus, exposing method, and device fabricating method |
JP5071894B2 (ja) * | 2008-04-30 | 2012-11-14 | 株式会社ニコン | ステージ装置、パターン形成装置、露光装置、ステージ駆動方法、露光方法、並びにデバイス製造方法 |
US9176393B2 (en) | 2008-05-28 | 2015-11-03 | Asml Netherlands B.V. | Lithographic apparatus and a method of operating the apparatus |
JP2010098172A (ja) * | 2008-10-17 | 2010-04-30 | Canon Inc | 液体回収装置、露光装置及びデバイス製造方法 |
US8477284B2 (en) * | 2008-10-22 | 2013-07-02 | Nikon Corporation | Apparatus and method to control vacuum at porous material using multiple porous materials |
US8634055B2 (en) * | 2008-10-22 | 2014-01-21 | Nikon Corporation | Apparatus and method to control vacuum at porous material using multiple porous materials |
NL2005207A (en) | 2009-09-28 | 2011-03-29 | Asml Netherlands Bv | Heat pipe, lithographic apparatus and device manufacturing method. |
US20110222031A1 (en) * | 2010-03-12 | 2011-09-15 | Nikon Corporation | Liquid immersion member, exposure apparatus, liquid recovering method, device fabricating method, program, and storage medium |
EP2381310B1 (en) | 2010-04-22 | 2015-05-06 | ASML Netherlands BV | Fluid handling structure and lithographic apparatus |
NL2008979A (en) * | 2011-07-11 | 2013-01-14 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
US9268231B2 (en) * | 2012-04-10 | 2016-02-23 | Nikon Corporation | Liquid immersion member, exposure apparatus, exposing method, method for manufacturing device, program, and recording medium |
JP6008783B2 (ja) * | 2013-04-03 | 2016-10-19 | 日本航空電子工業株式会社 | コネクタ |
US9405287B1 (en) * | 2015-07-22 | 2016-08-02 | Applied Materials, Inc. | Apparatus and method for optical calibration of wafer placement by a robot |
JP6534318B2 (ja) * | 2015-09-02 | 2019-06-26 | アズビル株式会社 | 蛍光粒子の計測方法 |
US10948830B1 (en) | 2019-12-23 | 2021-03-16 | Waymo Llc | Systems and methods for lithography |
Family Cites Families (230)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE221563C (xx) | ||||
DE224448C (xx) | ||||
US767963A (en) * | 1903-10-22 | 1904-08-16 | Herman F W Schleckser | Fob, charm, or locket. |
GB1242527A (en) | 1967-10-20 | 1971-08-11 | Kodak Ltd | Optical instruments |
US4346164A (en) * | 1980-10-06 | 1982-08-24 | Werner Tabarelli | Photolithographic method for the manufacture of integrated circuits |
US4509852A (en) | 1980-10-06 | 1985-04-09 | Werner Tabarelli | Apparatus for the photolithographic manufacture of integrated circuit elements |
JPS57153433A (en) | 1981-03-18 | 1982-09-22 | Hitachi Ltd | Manufacturing device for semiconductor |
JPS58202448A (ja) | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 露光装置 |
JPS5919912A (ja) | 1982-07-26 | 1984-02-01 | Hitachi Ltd | 液浸距離保持装置 |
US4441808A (en) | 1982-11-15 | 1984-04-10 | Tre Semiconductor Equipment Corp. | Focusing device for photo-exposure system |
DD221563A1 (de) | 1983-09-14 | 1985-04-24 | Mikroelektronik Zt Forsch Tech | Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur |
DD224448A1 (de) | 1984-03-01 | 1985-07-03 | Zeiss Jena Veb Carl | Einrichtung zur fotolithografischen strukturuebertragung |
JPS6265326A (ja) | 1985-09-18 | 1987-03-24 | Hitachi Ltd | 露光装置 |
JPS63157419A (ja) | 1986-12-22 | 1988-06-30 | Toshiba Corp | 微細パタ−ン転写装置 |
US4837443A (en) | 1987-10-15 | 1989-06-06 | The Perkin-Elmer Corporation | Guard ring for a differentially pumped seal apparatus |
JPH04305915A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH04305917A (ja) | 1991-04-02 | 1992-10-28 | Nikon Corp | 密着型露光装置 |
JPH0562877A (ja) | 1991-09-02 | 1993-03-12 | Yasuko Shinohara | 光によるlsi製造縮小投影露光装置の光学系 |
JP3374413B2 (ja) * | 1992-07-20 | 2003-02-04 | 株式会社ニコン | 投影露光装置、投影露光方法、並びに集積回路製造方法 |
JP3246615B2 (ja) | 1992-07-27 | 2002-01-15 | 株式会社ニコン | 照明光学装置、露光装置、及び露光方法 |
JPH06188169A (ja) | 1992-08-24 | 1994-07-08 | Canon Inc | 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法 |
JPH06124873A (ja) | 1992-10-09 | 1994-05-06 | Canon Inc | 液浸式投影露光装置 |
JP2753930B2 (ja) * | 1992-11-27 | 1998-05-20 | キヤノン株式会社 | 液浸式投影露光装置 |
JP3747958B2 (ja) | 1995-04-07 | 2006-02-22 | 株式会社ニコン | 反射屈折光学系 |
JP3212199B2 (ja) | 1993-10-04 | 2001-09-25 | 旭硝子株式会社 | 平板型陰極線管 |
JPH07220990A (ja) | 1994-01-28 | 1995-08-18 | Hitachi Ltd | パターン形成方法及びその露光装置 |
US5528118A (en) | 1994-04-01 | 1996-06-18 | Nikon Precision, Inc. | Guideless stage with isolated reaction stage |
US5874820A (en) | 1995-04-04 | 1999-02-23 | Nikon Corporation | Window frame-guided stage mechanism |
US5623853A (en) | 1994-10-19 | 1997-04-29 | Nikon Precision Inc. | Precision motion stage with single guide beam and follower stage |
JPH08136475A (ja) | 1994-11-14 | 1996-05-31 | Kawasaki Steel Corp | 板状材の表面観察装置 |
JPH08171054A (ja) | 1994-12-16 | 1996-07-02 | Nikon Corp | 反射屈折光学系 |
JPH08316125A (ja) | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
JPH08316124A (ja) * | 1995-05-19 | 1996-11-29 | Hitachi Ltd | 投影露光方法及び露光装置 |
US5707535A (en) * | 1996-01-11 | 1998-01-13 | Harris; Ronald B. | Vacuum loadable divided phase separator for liquid/solid separation |
JPH103039A (ja) | 1996-06-14 | 1998-01-06 | Nikon Corp | 反射屈折光学系 |
JPH1020195A (ja) | 1996-06-28 | 1998-01-23 | Nikon Corp | 反射屈折光学系 |
JP3227595B2 (ja) * | 1996-08-20 | 2001-11-12 | 東京エレクトロン株式会社 | 現像処理方法及び現像処理装置 |
US6104687A (en) * | 1996-08-26 | 2000-08-15 | Digital Papyrus Corporation | Method and apparatus for coupling an optical lens to a disk through a coupling medium having a relatively high index of refraction |
US5825043A (en) * | 1996-10-07 | 1998-10-20 | Nikon Precision Inc. | Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus |
JP4029183B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 投影露光装置及び投影露光方法 |
SG88824A1 (en) | 1996-11-28 | 2002-05-21 | Nikon Corp | Projection exposure method |
JP4029182B2 (ja) | 1996-11-28 | 2008-01-09 | 株式会社ニコン | 露光方法 |
JP3728613B2 (ja) * | 1996-12-06 | 2005-12-21 | 株式会社ニコン | 走査型露光装置の調整方法及び該方法を使用する走査型露光装置 |
DE69717975T2 (de) | 1996-12-24 | 2003-05-28 | Asml Netherlands Bv | In zwei richtungen ausgewogenes positioniergerät, sowie lithographisches gerät mit einem solchen positioniergerät |
USRE40043E1 (en) | 1997-03-10 | 2008-02-05 | Asml Netherlands B.V. | Positioning device having two object holders |
JPH10255319A (ja) | 1997-03-12 | 1998-09-25 | Hitachi Maxell Ltd | 原盤露光装置及び方法 |
JP3747566B2 (ja) * | 1997-04-23 | 2006-02-22 | 株式会社ニコン | 液浸型露光装置 |
JP3817836B2 (ja) | 1997-06-10 | 2006-09-06 | 株式会社ニコン | 露光装置及びその製造方法並びに露光方法及びデバイス製造方法 |
US20010003028A1 (en) | 1997-09-19 | 2001-06-07 | Nikon Corporation | Scanning Exposure Method |
JP4210871B2 (ja) | 1997-10-31 | 2009-01-21 | 株式会社ニコン | 露光装置 |
JPH11176727A (ja) | 1997-12-11 | 1999-07-02 | Nikon Corp | 投影露光装置 |
US6675173B1 (en) * | 1998-01-22 | 2004-01-06 | Ori Software Development Ltd. | Database apparatus |
JPH11260791A (ja) * | 1998-03-10 | 1999-09-24 | Toshiba Mach Co Ltd | 半導体ウエハの乾燥方法および乾燥装置 |
WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
US5997963A (en) * | 1998-05-05 | 1999-12-07 | Ultratech Stepper, Inc. | Microchamber |
US6430527B1 (en) * | 1998-05-06 | 2002-08-06 | Avici Systems | Prefix search circuitry and method |
JP2000058436A (ja) | 1998-08-11 | 2000-02-25 | Nikon Corp | 投影露光装置及び露光方法 |
JP2000076707A (ja) | 1998-08-31 | 2000-03-14 | Sony Corp | 光学記録媒体作製用原盤記録装置 |
EP1143492A4 (en) | 1998-09-03 | 2004-06-02 | Nikon Corp | EXPOSURE APPARATUS AND METHOD, DEVICE AND METHOD FOR PRODUCING SAID APPARATUS |
FI982095A (fi) * | 1998-09-29 | 2000-03-30 | Nokia Networks Oy | Menetelmä muistin toteuttamiseksi ja muistijärjestely |
EP1052552A3 (en) | 1999-04-19 | 2003-03-12 | ASML Netherlands B.V. | Gas bearings for use with vacuum chambers and their application in lithographic projection apparatus |
JP3653198B2 (ja) * | 1999-07-16 | 2005-05-25 | アルプス電気株式会社 | 乾燥用ノズルおよびこれを用いた乾燥装置ならびに洗浄装置 |
JP2001118773A (ja) | 1999-10-18 | 2001-04-27 | Nikon Corp | ステージ装置及び露光装置 |
WO2001035168A1 (en) | 1999-11-10 | 2001-05-17 | Massachusetts Institute Of Technology | Interference lithography utilizing phase-locked scanning beams |
TWI264617B (en) * | 1999-12-21 | 2006-10-21 | Asml Netherlands Bv | Balanced positioning system for use in lithographic apparatus |
US7187503B2 (en) * | 1999-12-29 | 2007-03-06 | Carl Zeiss Smt Ag | Refractive projection objective for immersion lithography |
US6995930B2 (en) * | 1999-12-29 | 2006-02-07 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
TW579664B (en) | 2000-01-11 | 2004-03-11 | Matsushita Electric Ind Co Ltd | Apparatus and method for manufacturing printed circuit board |
JP3630054B2 (ja) | 2000-01-11 | 2005-03-16 | 松下電器産業株式会社 | プリント配線板の製造装置およびそれを用いたプリント配線板の製造方法 |
US6697363B1 (en) * | 2000-06-28 | 2004-02-24 | Alcatel Canada Inc. | Method and apparatus for longest matching prefix determination in a communication network |
US6488040B1 (en) * | 2000-06-30 | 2002-12-03 | Lam Research Corporation | Capillary proximity heads for single wafer cleaning and drying |
US7000622B2 (en) | 2002-09-30 | 2006-02-21 | Lam Research Corporation | Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus |
TW591653B (en) * | 2000-08-08 | 2004-06-11 | Koninkl Philips Electronics Nv | Method of manufacturing an optically scannable information carrier |
JP2002134384A (ja) | 2000-10-20 | 2002-05-10 | Nikon Corp | 露光方法及び装置、並びにデバイス製造方法 |
KR100866818B1 (ko) * | 2000-12-11 | 2008-11-04 | 가부시키가이샤 니콘 | 투영광학계 및 이 투영광학계를 구비한 노광장치 |
US20020080339A1 (en) * | 2000-12-25 | 2002-06-27 | Nikon Corporation | Stage apparatus, vibration control method and exposure apparatus |
JP2002200453A (ja) * | 2000-12-28 | 2002-07-16 | Matsushita Electric Ind Co Ltd | 塗布装置および塗布方法 |
US6731372B2 (en) | 2001-03-27 | 2004-05-04 | Nikon Corporation | Multiple chamber fluid mount |
WO2002091078A1 (en) | 2001-05-07 | 2002-11-14 | Massachusetts Institute Of Technology | Methods and apparatus employing an index matching medium |
TW529172B (en) | 2001-07-24 | 2003-04-21 | Asml Netherlands Bv | Imaging apparatus |
US7032658B2 (en) | 2002-01-31 | 2006-04-25 | Smart Drilling And Completion, Inc. | High power umbilicals for electric flowline immersion heating of produced hydrocarbons |
JP2003124180A (ja) | 2001-10-16 | 2003-04-25 | Ebara Corp | 基板処理装置 |
US6811613B2 (en) | 2001-11-26 | 2004-11-02 | Tokyo Electron Limited | Coating film forming apparatus |
US6764386B2 (en) * | 2002-01-11 | 2004-07-20 | Applied Materials, Inc. | Air bearing-sealed micro-processing chamber |
US6907890B2 (en) * | 2002-02-06 | 2005-06-21 | Akrion Llc | Capillary drying of substrates |
DE10229818A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Smt Ag | Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem |
US7092069B2 (en) * | 2002-03-08 | 2006-08-15 | Carl Zeiss Smt Ag | Projection exposure method and projection exposure system |
DE10210899A1 (de) * | 2002-03-08 | 2003-09-18 | Zeiss Carl Smt Ag | Refraktives Projektionsobjektiv für Immersions-Lithographie |
US6694323B2 (en) * | 2002-04-25 | 2004-02-17 | Sybase, Inc. | System and methodology for providing compact B-Tree |
US7362508B2 (en) | 2002-08-23 | 2008-04-22 | Nikon Corporation | Projection optical system and method for photolithography and exposure apparatus and method using same |
US6934252B2 (en) * | 2002-09-16 | 2005-08-23 | North Carolina State University | Methods and systems for fast binary network address lookups using parent node information stored in routing table entries |
US6988327B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Methods and systems for processing a substrate using a dynamic liquid meniscus |
US6988326B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US7383843B2 (en) | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US7367345B1 (en) | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US7520285B2 (en) | 2002-09-30 | 2009-04-21 | Lam Research Corporation | Apparatus and method for processing a substrate |
US7198055B2 (en) * | 2002-09-30 | 2007-04-03 | Lam Research Corporation | Meniscus, vacuum, IPA vapor, drying manifold |
US6788477B2 (en) * | 2002-10-22 | 2004-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus for method for immersion lithography |
EP1420300B1 (en) * | 2002-11-12 | 2015-07-29 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP2495613B1 (en) * | 2002-11-12 | 2013-07-31 | ASML Netherlands B.V. | Lithographic apparatus |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
CN100470367C (zh) | 2002-11-12 | 2009-03-18 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
CN101382738B (zh) * | 2002-11-12 | 2011-01-12 | Asml荷兰有限公司 | 光刻投射装置 |
EP1420299B1 (en) | 2002-11-12 | 2011-01-05 | ASML Netherlands B.V. | Immersion lithographic apparatus and device manufacturing method |
US7110081B2 (en) * | 2002-11-12 | 2006-09-19 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP3953460B2 (ja) * | 2002-11-12 | 2007-08-08 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ投影装置 |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
DE10253679A1 (de) * | 2002-11-18 | 2004-06-03 | Infineon Technologies Ag | Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren |
SG131766A1 (en) * | 2002-11-18 | 2007-05-28 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE10258718A1 (de) * | 2002-12-09 | 2004-06-24 | Carl Zeiss Smt Ag | Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives |
EP1429190B1 (en) * | 2002-12-10 | 2012-05-09 | Canon Kabushiki Kaisha | Exposure apparatus and method |
WO2004053956A1 (ja) * | 2002-12-10 | 2004-06-24 | Nikon Corporation | 露光装置及び露光方法、デバイス製造方法 |
CN101872135B (zh) * | 2002-12-10 | 2013-07-31 | 株式会社尼康 | 曝光设备和器件制造法 |
KR20120127755A (ko) * | 2002-12-10 | 2012-11-23 | 가부시키가이샤 니콘 | 노광장치 및 디바이스 제조방법 |
EP1573730B1 (en) | 2002-12-13 | 2009-02-25 | Koninklijke Philips Electronics N.V. | Liquid removal in a method and device for irradiating spots on a layer |
GB0229345D0 (en) * | 2002-12-17 | 2003-01-22 | Safe T Ltd | Hollow needle applicators |
AU2003295177A1 (en) | 2002-12-19 | 2004-07-14 | Koninklijke Philips Electronics N.V. | Method and device for irradiating spots on a layer |
US7010958B2 (en) * | 2002-12-19 | 2006-03-14 | Asml Holding N.V. | High-resolution gas gauge proximity sensor |
KR100971441B1 (ko) | 2002-12-19 | 2010-07-21 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | 레이어 상의 스폿을 조사하기 위한 방법 및 장치 |
EP1431710A3 (en) * | 2002-12-19 | 2004-09-15 | ASML Holding N.V. | Liquid flow proximity sensor for use in immersion lithography |
US6781670B2 (en) * | 2002-12-30 | 2004-08-24 | Intel Corporation | Immersion lithography |
TWI247339B (en) * | 2003-02-21 | 2006-01-11 | Asml Holding Nv | Lithographic printing with polarized light |
JP4352930B2 (ja) | 2003-02-26 | 2009-10-28 | 株式会社ニコン | 露光装置、露光方法及びデバイス製造方法 |
EP2945016B1 (en) | 2003-02-26 | 2017-09-06 | Nikon Corporation | Exposure apparatus, exposure method, and method for producing device |
US6943941B2 (en) * | 2003-02-27 | 2005-09-13 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7206059B2 (en) * | 2003-02-27 | 2007-04-17 | Asml Netherlands B.V. | Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems |
US7029832B2 (en) | 2003-03-11 | 2006-04-18 | Samsung Electronics Co., Ltd. | Immersion lithography methods using carbon dioxide |
US20050164522A1 (en) | 2003-03-24 | 2005-07-28 | Kunz Roderick R. | Optical fluids, and systems and methods of making and using the same |
WO2004086470A1 (ja) | 2003-03-25 | 2004-10-07 | Nikon Corporation | 露光装置及びデバイス製造方法 |
ATE426914T1 (de) * | 2003-04-07 | 2009-04-15 | Nikon Corp | Belichtungsgerat und verfahren zur herstellung einer vorrichtung |
JP4488004B2 (ja) | 2003-04-09 | 2010-06-23 | 株式会社ニコン | 液浸リソグラフィ流体制御システム |
KR20140139139A (ko) | 2003-04-10 | 2014-12-04 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템 |
EP2921905B1 (en) | 2003-04-10 | 2017-12-27 | Nikon Corporation | Run-off path to collect liquid for an immersion lithography apparatus |
CN105700301B (zh) | 2003-04-10 | 2018-05-25 | 株式会社尼康 | 包括用于沉浸光刻装置的真空清除的环境系统 |
WO2004090633A2 (en) | 2003-04-10 | 2004-10-21 | Nikon Corporation | An electro-osmotic element for an immersion lithography apparatus |
JP4582089B2 (ja) | 2003-04-11 | 2010-11-17 | 株式会社ニコン | 液浸リソグラフィ用の液体噴射回収システム |
EP1614001B1 (en) | 2003-04-11 | 2009-11-25 | Nikon Corporation | Cleanup method for optics in immersion lithography |
CN101002140B (zh) | 2003-04-11 | 2010-12-08 | 株式会社尼康 | 保持平板印刷投射透镜下面的浸没流体的设备和方法 |
ATE542167T1 (de) | 2003-04-17 | 2012-02-15 | Nikon Corp | Lithographisches immersionsgerät |
JP4146755B2 (ja) * | 2003-05-09 | 2008-09-10 | 松下電器産業株式会社 | パターン形成方法 |
JP4025683B2 (ja) * | 2003-05-09 | 2007-12-26 | 松下電器産業株式会社 | パターン形成方法及び露光装置 |
EP2270599A1 (en) | 2003-05-13 | 2011-01-05 | ASML Netherlands BV | Lithographic apparatus |
TWI295414B (en) * | 2003-05-13 | 2008-04-01 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
TWI421906B (zh) | 2003-05-23 | 2014-01-01 | 尼康股份有限公司 | An exposure method, an exposure apparatus, and an element manufacturing method |
JP2004349645A (ja) * | 2003-05-26 | 2004-12-09 | Sony Corp | 液浸差動排液静圧浮上パッド、原盤露光装置および液侵差動排液による露光方法 |
DE10324477A1 (de) | 2003-05-30 | 2004-12-30 | Carl Zeiss Smt Ag | Mikrolithographische Projektionsbelichtungsanlage |
US7213963B2 (en) | 2003-06-09 | 2007-05-08 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4054285B2 (ja) * | 2003-06-12 | 2008-02-27 | 松下電器産業株式会社 | パターン形成方法 |
JP4084710B2 (ja) * | 2003-06-12 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
KR101419663B1 (ko) | 2003-06-19 | 2014-07-15 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조방법 |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
JP4029064B2 (ja) * | 2003-06-23 | 2008-01-09 | 松下電器産業株式会社 | パターン形成方法 |
JP4084712B2 (ja) * | 2003-06-23 | 2008-04-30 | 松下電器産業株式会社 | パターン形成方法 |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
EP1498778A1 (en) * | 2003-06-27 | 2005-01-19 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP3862678B2 (ja) * | 2003-06-27 | 2006-12-27 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
EP1639391A4 (en) | 2003-07-01 | 2009-04-29 | Nikon Corp | USE OF FLUIDS SPECIFIED ISOTOPICALLY AS OPTICAL ELEMENTS |
WO2005006417A1 (ja) | 2003-07-09 | 2005-01-20 | Nikon Corporation | 露光装置及びデバイス製造方法 |
US7384149B2 (en) | 2003-07-21 | 2008-06-10 | Asml Netherlands B.V. | Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system |
US7006209B2 (en) | 2003-07-25 | 2006-02-28 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7326522B2 (en) * | 2004-02-11 | 2008-02-05 | Asml Netherlands B.V. | Device manufacturing method and a substrate |
US7299235B2 (en) * | 2003-07-28 | 2007-11-20 | Rightorder, Incorporated | Method and apparatus for ternary PATRICIA trie blocks |
US7175968B2 (en) * | 2003-07-28 | 2007-02-13 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and a substrate |
US7061578B2 (en) | 2003-08-11 | 2006-06-13 | Advanced Micro Devices, Inc. | Method and apparatus for monitoring and controlling imaging in immersion lithography systems |
US7700267B2 (en) * | 2003-08-11 | 2010-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Immersion fluid for immersion lithography, and method of performing immersion lithography |
US7579135B2 (en) * | 2003-08-11 | 2009-08-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lithography apparatus for manufacture of integrated circuits |
US7085075B2 (en) | 2003-08-12 | 2006-08-01 | Carl Zeiss Smt Ag | Projection objectives including a plurality of mirrors with lenses ahead of mirror M3 |
US6844206B1 (en) | 2003-08-21 | 2005-01-18 | Advanced Micro Devices, Llp | Refractive index system monitor and control for immersion lithography |
US7070915B2 (en) | 2003-08-29 | 2006-07-04 | Tokyo Electron Limited | Method and system for drying a substrate |
US6954256B2 (en) * | 2003-08-29 | 2005-10-11 | Asml Netherlands B.V. | Gradient immersion lithography |
US7014966B2 (en) | 2003-09-02 | 2006-03-21 | Advanced Micro Devices, Inc. | Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems |
KR101238114B1 (ko) | 2003-09-03 | 2013-02-27 | 가부시키가이샤 니콘 | 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법 |
JP4378136B2 (ja) * | 2003-09-04 | 2009-12-02 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US6961186B2 (en) * | 2003-09-26 | 2005-11-01 | Takumi Technology Corp. | Contact printing using a magnified mask image |
EP1519230A1 (en) | 2003-09-29 | 2005-03-30 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4513299B2 (ja) | 2003-10-02 | 2010-07-28 | 株式会社ニコン | 露光装置、露光方法、及びデバイス製造方法 |
JP4515209B2 (ja) | 2003-10-02 | 2010-07-28 | 株式会社ニコン | 露光装置及び露光方法、並びにデバイス製造方法 |
US7369217B2 (en) | 2003-10-03 | 2008-05-06 | Micronic Laser Systems Ab | Method and device for immersion lithography |
US7678527B2 (en) * | 2003-10-16 | 2010-03-16 | Intel Corporation | Methods and compositions for providing photoresist with improved properties for contacting liquids |
JP2005159322A (ja) | 2003-10-31 | 2005-06-16 | Nikon Corp | 定盤、ステージ装置及び露光装置並びに露光方法 |
US20070105050A1 (en) | 2003-11-05 | 2007-05-10 | Dsm Ip Assets B.V. | Method and apparatus for producing microchips |
US7924397B2 (en) * | 2003-11-06 | 2011-04-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Anti-corrosion layer on objective lens for liquid immersion lithography applications |
US7545481B2 (en) | 2003-11-24 | 2009-06-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4747263B2 (ja) | 2003-11-24 | 2011-08-17 | カール・ツァイス・エスエムティー・ゲーエムベーハー | オブジェクティブにおける光学素子のための保持装置 |
JP2005166776A (ja) * | 2003-12-01 | 2005-06-23 | Canon Inc | 液浸露光装置 |
US7125652B2 (en) | 2003-12-03 | 2006-10-24 | Advanced Micro Devices, Inc. | Immersion lithographic process using a conforming immersion medium |
WO2005059654A1 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Objective as a microlithography projection objective with at least one liquid lens |
WO2005059617A2 (en) | 2003-12-15 | 2005-06-30 | Carl Zeiss Smt Ag | Projection objective having a high aperture and a planar end surface |
US7017334B2 (en) * | 2003-12-18 | 2006-03-28 | United Technologies Corporation | Compact fastening collar and stud for connecting walls of a nozzle liner and method associated therewith |
JP5102492B2 (ja) | 2003-12-19 | 2012-12-19 | カール・ツァイス・エスエムティー・ゲーエムベーハー | 結晶素子を有するマイクロリソグラフィー投影用対物レンズ |
US20050185269A1 (en) * | 2003-12-19 | 2005-08-25 | Carl Zeiss Smt Ag | Catadioptric projection objective with geometric beam splitting |
US7460206B2 (en) * | 2003-12-19 | 2008-12-02 | Carl Zeiss Smt Ag | Projection objective for immersion lithography |
JP2005183744A (ja) | 2003-12-22 | 2005-07-07 | Nikon Corp | 露光装置及びデバイス製造方法 |
US7394521B2 (en) * | 2003-12-23 | 2008-07-01 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7589818B2 (en) * | 2003-12-23 | 2009-09-15 | Asml Netherlands B.V. | Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus |
US7119884B2 (en) | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20050147920A1 (en) * | 2003-12-30 | 2005-07-07 | Chia-Hui Lin | Method and system for immersion lithography |
US7088422B2 (en) * | 2003-12-31 | 2006-08-08 | International Business Machines Corporation | Moving lens for immersion optical lithography |
JP4371822B2 (ja) * | 2004-01-06 | 2009-11-25 | キヤノン株式会社 | 露光装置 |
JP4429023B2 (ja) * | 2004-01-07 | 2010-03-10 | キヤノン株式会社 | 露光装置及びデバイス製造方法 |
US20050153424A1 (en) * | 2004-01-08 | 2005-07-14 | Derek Coon | Fluid barrier with transparent areas for immersion lithography |
CN102207609B (zh) * | 2004-01-14 | 2013-03-20 | 卡尔蔡司Smt有限责任公司 | 反射折射投影物镜 |
ATE539383T1 (de) | 2004-01-16 | 2012-01-15 | Zeiss Carl Smt Gmbh | Projektionssystem mit einem polarisationsmodulierenden optischen element mit variabler dicke |
WO2005069078A1 (en) | 2004-01-19 | 2005-07-28 | Carl Zeiss Smt Ag | Microlithographic projection exposure apparatus with immersion projection lens |
JP4843503B2 (ja) | 2004-01-20 | 2011-12-21 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置および投影レンズのための測定装置 |
US7026259B2 (en) * | 2004-01-21 | 2006-04-11 | International Business Machines Corporation | Liquid-filled balloons for immersion lithography |
US7391501B2 (en) * | 2004-01-22 | 2008-06-24 | Intel Corporation | Immersion liquids with siloxane polymer for immersion lithography |
WO2005074606A2 (en) | 2004-02-03 | 2005-08-18 | Rochester Institute Of Technology | Method of photolithography using a fluid and a system thereof |
US7050146B2 (en) * | 2004-02-09 | 2006-05-23 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
EP1716454A1 (en) | 2004-02-09 | 2006-11-02 | Carl Zeiss SMT AG | Projection objective for a microlithographic projection exposure apparatus |
KR101115111B1 (ko) | 2004-02-13 | 2012-04-16 | 칼 짜이스 에스엠티 게엠베하 | 마이크로 리소그래프 투영 노광 장치 투영 대물 렌즈 |
CN1922528A (zh) | 2004-02-18 | 2007-02-28 | 康宁股份有限公司 | 用于具有深紫外光的高数值孔径成象的反折射成象系统 |
US20050205108A1 (en) * | 2004-03-16 | 2005-09-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and system for immersion lithography lens cleaning |
US7027125B2 (en) * | 2004-03-25 | 2006-04-11 | International Business Machines Corporation | System and apparatus for photolithography |
US7084960B2 (en) * | 2004-03-29 | 2006-08-01 | Intel Corporation | Lithography using controlled polarization |
US7034917B2 (en) * | 2004-04-01 | 2006-04-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
US7227619B2 (en) * | 2004-04-01 | 2007-06-05 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7295283B2 (en) | 2004-04-02 | 2007-11-13 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7091502B2 (en) | 2004-05-12 | 2006-08-15 | Taiwan Semiconductor Manufacturing, Co., Ltd. | Apparatus and method for immersion lithography |
US7486381B2 (en) | 2004-05-21 | 2009-02-03 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP4623095B2 (ja) | 2004-06-17 | 2011-02-02 | 株式会社ニコン | 液浸リソグラフィレンズの流体圧力補正 |
US7057702B2 (en) | 2004-06-23 | 2006-06-06 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
WO2006007111A2 (en) | 2004-07-01 | 2006-01-19 | Nikon Corporation | A dynamic fluid control system for immersion lithography |
US7693850B2 (en) * | 2004-07-19 | 2010-04-06 | Rightorder, Inc. | Method and apparatus for adding supplemental information to PATRICIA tries |
US7701550B2 (en) * | 2004-08-19 | 2010-04-20 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7355674B2 (en) | 2004-09-28 | 2008-04-08 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and computer program product |
US7161654B2 (en) | 2004-12-02 | 2007-01-09 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US7265813B2 (en) | 2004-12-28 | 2007-09-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
-
2004
- 2004-04-01 KR KR1020147032349A patent/KR20140139139A/ko not_active Application Discontinuation
- 2004-04-01 WO PCT/US2004/009994 patent/WO2004092833A2/en active Application Filing
- 2004-04-01 KR KR1020137011294A patent/KR101409565B1/ko active IP Right Grant
- 2004-04-01 KR KR1020177014954A patent/KR20170064003A/ko active IP Right Grant
- 2004-04-01 KR KR1020127015202A patent/KR101323993B1/ko active IP Right Grant
- 2004-04-01 KR KR1020117016439A patent/KR101177330B1/ko active IP Right Grant
- 2004-04-01 EP EP17206979.1A patent/EP3352015A1/en not_active Withdrawn
- 2004-04-01 EP EP04759085.6A patent/EP1611486B1/en not_active Expired - Lifetime
- 2004-04-01 KR KR1020127021786A patent/KR101431938B1/ko active IP Right Grant
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2005
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2006
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2007
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2010
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2011
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2012
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2013
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2014
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2015
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2016
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2017
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2018
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- 2018-09-27 HK HK18112453.5A patent/HK1253211A1/zh unknown
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Effective date: 20200404 |