DE69321571T2 - Projektionsvorrichtung zur Tauchbelichtung - Google Patents

Projektionsvorrichtung zur Tauchbelichtung

Info

Publication number
DE69321571T2
DE69321571T2 DE69321571T DE69321571T DE69321571T2 DE 69321571 T2 DE69321571 T2 DE 69321571T2 DE 69321571 T DE69321571 T DE 69321571T DE 69321571 T DE69321571 T DE 69321571T DE 69321571 T2 DE69321571 T2 DE 69321571T2
Authority
DE
Germany
Prior art keywords
diving
exposure
projection device
projection
diving exposure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69321571T
Other languages
English (en)
Other versions
DE69321571D1 (de
Inventor
Kazuo Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69321571D1 publication Critical patent/DE69321571D1/de
Publication of DE69321571T2 publication Critical patent/DE69321571T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/707Chucks, e.g. chucking or un-chucking operations or structural details
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216Mask projection systems
    • G03F7/70341Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075Handling workpieces outside exposure position, e.g. SMIF box
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891Temperature
DE69321571T 1992-11-27 1993-11-26 Projektionsvorrichtung zur Tauchbelichtung Expired - Fee Related DE69321571T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4339510A JP2753930B2 (ja) 1992-11-27 1992-11-27 液浸式投影露光装置

Publications (2)

Publication Number Publication Date
DE69321571D1 DE69321571D1 (de) 1998-11-19
DE69321571T2 true DE69321571T2 (de) 1999-04-08

Family

ID=18328165

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69321571T Expired - Fee Related DE69321571T2 (de) 1992-11-27 1993-11-26 Projektionsvorrichtung zur Tauchbelichtung

Country Status (4)

Country Link
US (1) US5610683A (de)
EP (1) EP0605103B1 (de)
JP (1) JP2753930B2 (de)
DE (1) DE69321571T2 (de)

Families Citing this family (513)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6405610B1 (en) * 1995-11-14 2002-06-18 Nikon Corporation Wafer inspection apparatus
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
US6239861B1 (en) * 1996-11-19 2001-05-29 Nikon Corporation Exposure method and scanning type exposure apparatus
JPH10209040A (ja) * 1996-11-25 1998-08-07 Nikon Corp 露光装置
US6714278B2 (en) 1996-11-25 2004-03-30 Nikon Corporation Exposure apparatus
CN1144263C (zh) 1996-11-28 2004-03-31 株式会社尼康 曝光装置以及曝光方法
US5900354A (en) * 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US6071748A (en) * 1997-07-16 2000-06-06 Ljl Biosystems, Inc. Light detection device
US6982431B2 (en) * 1998-08-31 2006-01-03 Molecular Devices Corporation Sample analysis systems
WO1999025011A1 (fr) * 1997-11-12 1999-05-20 Nikon Corporation Appareil d'exposition par projection
US6511914B2 (en) * 1999-01-22 2003-01-28 Semitool, Inc. Reactor for processing a workpiece using sonic energy
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6356337B1 (en) * 2000-03-08 2002-03-12 Anvik Corporation Two-sided substrate imaging using single-approach projection optics
TW559855B (en) * 2000-09-06 2003-11-01 Olympus Optical Co Wafer transfer apparatus
US20020170887A1 (en) * 2001-03-01 2002-11-21 Konica Corporation Optical element producing method, base material drawing method and base material drawing apparatus
US7092069B2 (en) 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10210899A1 (de) * 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
EP1532489A2 (de) * 2002-08-23 2005-05-25 Nikon Corporation Optisches projektionssystem, photolithographische methode, belichtungsapparat und belichtungsmethode unter verwendung dieses belichtungsapparats
US7239933B2 (en) * 2002-11-11 2007-07-03 Micron Technology, Inc. Substrate supports for use with programmable material consolidation apparatus and systems
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI232357B (en) * 2002-11-12 2005-05-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7372541B2 (en) * 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60335595D1 (de) * 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1429188B1 (de) * 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographischer Projektionsapparat
EP1420298B1 (de) * 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographischer Apparat
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR100588124B1 (ko) 2002-11-12 2006-06-09 에이에스엠엘 네델란즈 비.브이. 리소그래피장치 및 디바이스제조방법
CN101424881B (zh) * 2002-11-12 2011-11-30 Asml荷兰有限公司 光刻投射装置
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1420302A1 (de) * 2002-11-18 2004-05-19 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
EP1424599B1 (de) * 2002-11-29 2008-03-12 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
TWI255971B (en) * 2002-11-29 2006-06-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN100444315C (zh) * 2002-12-10 2008-12-17 株式会社尼康 曝光装置以及器件制造方法
DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
EP1571700A4 (de) * 2002-12-10 2007-09-12 Nikon Corp Optische vorrichtung und projektionsbelichtungsvorrichtung unter verwendung der optischen vorrichtung
KR101157002B1 (ko) * 2002-12-10 2012-06-21 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
CN100446179C (zh) * 2002-12-10 2008-12-24 株式会社尼康 曝光设备和器件制造法
JP4595320B2 (ja) * 2002-12-10 2010-12-08 株式会社ニコン 露光装置、及びデバイス製造方法
AU2003289199A1 (en) * 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus and method for manufacturing device
JP4529433B2 (ja) * 2002-12-10 2010-08-25 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
JP4645027B2 (ja) * 2002-12-10 2011-03-09 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
EP1429190B1 (de) * 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Belichtungsapparat und -verfahren
US7242455B2 (en) * 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
WO2004053957A1 (ja) * 2002-12-10 2004-06-24 Nikon Corporation 面位置検出装置、露光方法、及びデバイス製造方法
JP4525062B2 (ja) * 2002-12-10 2010-08-18 株式会社ニコン 露光装置及びデバイス製造方法、露光システム
JP4352874B2 (ja) * 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
AU2003302831A1 (en) * 2002-12-10 2004-06-30 Nikon Corporation Exposure method, exposure apparatus and method for manufacturing device
KR20050085236A (ko) * 2002-12-10 2005-08-29 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR101101737B1 (ko) * 2002-12-10 2012-01-05 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
AU2003289236A1 (en) * 2002-12-10 2004-06-30 Nikon Corporation Exposure apparatus and method for manufacturing device
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
AU2003295177A1 (en) * 2002-12-19 2004-07-14 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
US7130037B1 (en) 2003-01-09 2006-10-31 Kla-Tencor Technologies Corp. Systems for inspecting wafers and reticles with increased resolution
JP4434762B2 (ja) 2003-01-31 2010-03-17 東京応化工業株式会社 レジスト組成物
KR101643112B1 (ko) * 2003-02-26 2016-07-26 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP2005101498A (ja) * 2003-03-04 2005-04-14 Tokyo Ohka Kogyo Co Ltd 液浸露光プロセス用浸漬液および該浸漬液を用いたレジストパターン形成方法
WO2004081999A1 (ja) * 2003-03-12 2004-09-23 Nikon Corporation 光学装置、露光装置、並びにデバイス製造方法
KR20050110033A (ko) * 2003-03-25 2005-11-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
WO2004086148A1 (de) * 2003-03-26 2004-10-07 Carl Zeiss Smt Ag Vorrichtung zur deformationsarmen austauschbaren lagerung eines optischen elements
KR101176817B1 (ko) 2003-04-07 2012-08-24 가부시키가이샤 니콘 노광장치 및 디바이스 제조방법
KR101484435B1 (ko) 2003-04-09 2015-01-19 가부시키가이샤 니콘 노광 방법 및 장치, 그리고 디바이스 제조 방법
KR20110104084A (ko) * 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
JP4488005B2 (ja) * 2003-04-10 2010-06-23 株式会社ニコン 液浸リソグラフィ装置用の液体を捕集するための流出通路
KR101178754B1 (ko) * 2003-04-10 2012-09-07 가부시키가이샤 니콘 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템
KR20170064003A (ko) * 2003-04-10 2017-06-08 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
JP4656057B2 (ja) * 2003-04-10 2011-03-23 株式会社ニコン 液浸リソグラフィ装置用電気浸透素子
CN106444292A (zh) * 2003-04-11 2017-02-22 株式会社尼康 沉浸式光刻装置、清洗方法、器件制造方法及液体沉浸式光刻装置
KR101178756B1 (ko) 2003-04-11 2012-08-31 가부시키가이샤 니콘 액침 리소그래피 머신에서 웨이퍼 교환동안 투영 렌즈 아래의 갭에서 액침액체를 유지하는 장치 및 방법
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
JP2006523958A (ja) 2003-04-17 2006-10-19 株式会社ニコン 液浸リソグラフィで使用するためのオートフォーカス素子の光学的構造
EP2722703A3 (de) 2003-05-06 2014-07-23 Nikon Corporation Optisches Projektionssystem, und Belichtungsvorrichtung und Belichtungsverfahren
US7348575B2 (en) 2003-05-06 2008-03-25 Nikon Corporation Projection optical system, exposure apparatus, and exposure method
JP4025683B2 (ja) * 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
JP4146755B2 (ja) * 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
TWI295414B (en) * 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN100437358C (zh) * 2003-05-15 2008-11-26 株式会社尼康 曝光装置及器件制造方法
TWI421906B (zh) 2003-05-23 2014-01-01 尼康股份有限公司 An exposure method, an exposure apparatus, and an element manufacturing method
TW201806001A (zh) 2003-05-23 2018-02-16 尼康股份有限公司 曝光裝置及元件製造方法
KR101728664B1 (ko) * 2003-05-28 2017-05-02 가부시키가이샤 니콘 노광 방법, 노광 장치, 및 디바이스 제조 방법
DE10324477A1 (de) * 2003-05-30 2004-12-30 Carl Zeiss Smt Ag Mikrolithographische Projektionsbelichtungsanlage
TWI347741B (en) * 2003-05-30 2011-08-21 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1489461A1 (de) * 2003-06-11 2004-12-22 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684008B2 (en) * 2003-06-11 2010-03-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101528089B1 (ko) 2003-06-13 2015-06-11 가부시키가이샤 니콘 노광 방법, 기판 스테이지, 노광 장치, 및 디바이스 제조 방법
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
TWI433212B (zh) 2003-06-19 2014-04-01 尼康股份有限公司 An exposure apparatus, an exposure method, and an element manufacturing method
JP4343597B2 (ja) * 2003-06-25 2009-10-14 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005019616A (ja) * 2003-06-25 2005-01-20 Canon Inc 液浸式露光装置
DE60308161T2 (de) * 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
JP3862678B2 (ja) * 2003-06-27 2006-12-27 キヤノン株式会社 露光装置及びデバイス製造方法
EP1494079B1 (de) * 2003-06-27 2008-01-02 ASML Netherlands B.V. Lithographischer Apparat
EP1498778A1 (de) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1494074A1 (de) * 2003-06-30 2005-01-05 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
EP1494075B1 (de) * 2003-06-30 2008-06-25 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
KR20060027832A (ko) * 2003-07-01 2006-03-28 가부시키가이샤 니콘 광학 엘리먼트로서 동위원소적으로 특정된 유체를 사용하는방법
EP2843472B1 (de) * 2003-07-08 2016-12-07 Nikon Corporation Waferplatte für die Immersionslithografie
EP1643543B1 (de) * 2003-07-09 2010-11-24 Nikon Corporation Belichtungsvorrichtung und verfahren zur bauelementherstellung
WO2005006418A1 (ja) * 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
WO2005006415A1 (ja) 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
EP1646074A4 (de) * 2003-07-09 2007-10-03 Nikon Corp Belichtungsvorrichtung und verfahren zur bauelementeherstellung
CN101576717B (zh) * 2003-07-09 2013-03-27 株式会社尼康 曝光装置、器件制造方法
CN100470723C (zh) * 2003-07-09 2009-03-18 株式会社尼康 曝光装置以及器件制造方法
US7738074B2 (en) 2003-07-16 2010-06-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1498781B1 (de) * 2003-07-16 2019-04-17 ASML Netherlands B.V. Lithografisches Immersionsgerät und Verfahren zur Herstellung einer Vorrichtung
US20060285091A1 (en) * 2003-07-21 2006-12-21 Parekh Bipin S Lithographic projection apparatus, gas purging method, device manufacturing method and purge gas supply system related application
US20070132969A1 (en) * 2003-07-24 2007-06-14 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus and method for introducing an immersion liquid into an immersion space
EP1500982A1 (de) * 2003-07-24 2005-01-26 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
US7006209B2 (en) * 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
EP1650787A4 (de) * 2003-07-25 2007-09-19 Nikon Corp Untersuchungsverfahren und untersuchungseinrichtung für ein optisches projektionssystem und herstellungsverfahren für ein optisches projektionssystem
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
CN102323724B (zh) * 2003-07-28 2014-08-13 株式会社尼康 液浸曝光装置及其制造方法、曝光装置、器件制造方法
CN100452293C (zh) * 2003-07-28 2009-01-14 株式会社尼康 曝光装置及其控制方法
US7175968B2 (en) * 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
EP1503244A1 (de) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographischer Projektionsapparat und Verfahren zur Herstellung einer Vorrichtung
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7370659B2 (en) 2003-08-06 2008-05-13 Micron Technology, Inc. Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines
US7061578B2 (en) * 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
TWI244683B (en) * 2003-08-11 2005-12-01 Taiwan Semiconductor Mfg Immersion fluid for immersion lithography, and method of performing immersion lithography
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
KR101475995B1 (ko) 2003-08-21 2014-12-23 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
US8149381B2 (en) 2003-08-26 2012-04-03 Nikon Corporation Optical element and exposure apparatus
WO2005020298A1 (ja) 2003-08-26 2005-03-03 Nikon Corporation 光学素子及び露光装置
EP2261740B1 (de) 2003-08-29 2014-07-09 ASML Netherlands BV Lithographischer Apparat
KR101380989B1 (ko) * 2003-08-29 2014-04-04 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
KR101874724B1 (ko) * 2003-08-29 2018-07-04 가부시키가이샤 니콘 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법
TWI263859B (en) * 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
TWI245163B (en) * 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
US7070915B2 (en) * 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
US7014966B2 (en) * 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
KR101590686B1 (ko) * 2003-09-03 2016-02-01 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
WO2005024921A1 (ja) * 2003-09-03 2005-03-17 Nikon Corporation 露光装置及びデバイス製造方法
JP4378136B2 (ja) * 2003-09-04 2009-12-02 キヤノン株式会社 露光装置及びデバイス製造方法
JP2005083800A (ja) * 2003-09-05 2005-03-31 Hitachi Ltd 欠陥検査方法及び欠陥検査装置
JP3870182B2 (ja) 2003-09-09 2007-01-17 キヤノン株式会社 露光装置及びデバイス製造方法
US20050064679A1 (en) * 2003-09-19 2005-03-24 Farnworth Warren M. Consolidatable composite materials, articles of manufacture formed therefrom, and fabrication methods
US7713841B2 (en) * 2003-09-19 2010-05-11 Micron Technology, Inc. Methods for thinning semiconductor substrates that employ support structures formed on the substrates
US20050064683A1 (en) * 2003-09-19 2005-03-24 Farnworth Warren M. Method and apparatus for supporting wafers for die singulation and subsequent handling
WO2005029559A1 (ja) * 2003-09-19 2005-03-31 Nikon Corporation 露光装置及びデバイス製造方法
EP1664934B1 (de) * 2003-09-25 2013-12-18 Infineon Technologies AG Immersions-lithographie-verfahren und vorrichtung zum belichten eines substrats
KR101238134B1 (ko) * 2003-09-26 2013-02-28 가부시키가이샤 니콘 투영노광장치 및 투영노광장치의 세정방법, 메인터넌스 방법 그리고 디바이스의 제조방법
EP1519230A1 (de) 2003-09-29 2005-03-30 ASML Netherlands B.V. Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
JP4438748B2 (ja) * 2003-09-29 2010-03-24 株式会社ニコン 投影露光装置、投影露光方法およびデバイス製造方法
JP5136566B2 (ja) * 2003-09-29 2013-02-06 株式会社ニコン 露光装置及び露光方法並びにデバイス製造方法
KR101498437B1 (ko) * 2003-09-29 2015-03-03 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
US7158211B2 (en) * 2003-09-29 2007-01-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60302897T2 (de) * 2003-09-29 2006-08-03 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
CN1860585B (zh) * 2003-09-29 2010-04-28 株式会社尼康 液浸型透镜系统和投影曝光装置
JP4513299B2 (ja) * 2003-10-02 2010-07-28 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
JP2005136374A (ja) * 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
JP4335213B2 (ja) * 2003-10-08 2009-09-30 株式会社蔵王ニコン 基板搬送装置、露光装置、デバイス製造方法
JP2005136364A (ja) * 2003-10-08 2005-05-26 Zao Nikon Co Ltd 基板搬送装置、露光装置、並びにデバイス製造方法
KR101203028B1 (ko) 2003-10-08 2012-11-21 가부시키가이샤 자오 니콘 기판 반송 장치 및 기판 반송 방법, 노광 장치 및 노광 방법, 디바이스 제조 방법
JP4524601B2 (ja) * 2003-10-09 2010-08-18 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
TWI553701B (zh) 2003-10-09 2016-10-11 尼康股份有限公司 Exposure apparatus and exposure method, component manufacturing method
EP1524557A1 (de) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographischer Apparat und Methode zur Herstellung einer Vorrichtung
EP1524558A1 (de) * 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
US7751129B2 (en) * 2003-10-22 2010-07-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
KR20140049044A (ko) 2003-10-22 2014-04-24 가부시키가이샤 니콘 노광 장치, 노광 방법, 디바이스의 제조 방법
TWI609409B (zh) 2003-10-28 2017-12-21 尼康股份有限公司 照明光學裝置、曝光裝置、曝光方法以及元件製造方法
JP4605014B2 (ja) * 2003-10-28 2011-01-05 株式会社ニコン 露光装置、露光方法、デバイスの製造方法
EP2267536B1 (de) * 2003-10-28 2017-04-19 ASML Netherlands B.V. Lithographischer Apparat
US7352433B2 (en) * 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
US7113259B2 (en) * 2003-10-31 2006-09-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101117429B1 (ko) 2003-10-31 2012-04-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP2005159322A (ja) * 2003-10-31 2005-06-16 Nikon Corp 定盤、ステージ装置及び露光装置並びに露光方法
US7924397B2 (en) * 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
JP2005150290A (ja) * 2003-11-13 2005-06-09 Canon Inc 露光装置およびデバイスの製造方法
EP1531362A3 (de) * 2003-11-13 2007-07-25 Matsushita Electric Industrial Co., Ltd. Vorrichtung zur Herstellung von Halbleitern und Methode zur Bildung von Mustern
JP4295712B2 (ja) * 2003-11-14 2009-07-15 エーエスエムエル ネザーランズ ビー.ブイ. リソグラフィ装置及び装置製造方法
CN1882822A (zh) * 2003-11-18 2006-12-20 皇家飞利浦电子股份有限公司 位置确定
TWI385414B (zh) 2003-11-20 2013-02-11 尼康股份有限公司 光學照明裝置、照明方法、曝光裝置、曝光方法以及元件製造方法
US7545481B2 (en) * 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG2014014955A (en) 2003-12-03 2014-07-30 Nippon Kogaku Kk Exposure apparatus, exposure method, method for producing device, and optical part
JP2005175016A (ja) 2003-12-08 2005-06-30 Canon Inc 基板保持装置およびそれを用いた露光装置ならびにデバイス製造方法
WO2005057635A1 (ja) * 2003-12-15 2005-06-23 Nikon Corporation 投影露光装置及びステージ装置、並びに露光方法
ATE491221T1 (de) * 2003-12-15 2010-12-15 Nikon Corp Bühnensystem, belichtungsvorrichtung und belichtungsverfahren
US20070081133A1 (en) * 2004-12-14 2007-04-12 Niikon Corporation Projection exposure apparatus and stage unit, and exposure method
US7245357B2 (en) * 2003-12-15 2007-07-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005059977A1 (ja) * 2003-12-16 2005-06-30 Nikon Corporation ステージ装置、露光装置、及び露光方法
JP4615210B2 (ja) * 2003-12-16 2011-01-19 財団法人国際科学振興財団 液浸型露光装置
JP4308638B2 (ja) 2003-12-17 2009-08-05 パナソニック株式会社 パターン形成方法
US7460206B2 (en) * 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
US7394521B2 (en) * 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005064409A2 (en) * 2003-12-23 2005-07-14 Koninklijke Philips Electronics N.V. Removable pellicle for immersion lithography
US7589818B2 (en) * 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7324274B2 (en) * 2003-12-24 2008-01-29 Nikon Corporation Microscope and immersion objective lens
US20050147920A1 (en) * 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
KR101748504B1 (ko) * 2004-01-05 2017-06-16 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP4371822B2 (ja) * 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4194495B2 (ja) 2004-01-07 2008-12-10 東京エレクトロン株式会社 塗布・現像装置
JP4429023B2 (ja) * 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) * 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
JP4843503B2 (ja) * 2004-01-20 2011-12-21 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置および投影レンズのための測定装置
WO2005071717A1 (ja) * 2004-01-26 2005-08-04 Nikon Corporation 露光装置及びデバイス製造方法
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
KR101276392B1 (ko) * 2004-02-03 2013-06-19 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
TW200537255A (en) * 2004-02-04 2005-11-16 Nikon Corp Exposure equipment and method, position control method and device manufacturing method
KR101579361B1 (ko) * 2004-02-04 2015-12-21 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP5167572B2 (ja) * 2004-02-04 2013-03-21 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
TWI505329B (zh) 2004-02-06 2015-10-21 尼康股份有限公司 光學照明裝置、曝光裝置、曝光方法以及元件製造方法
WO2005076322A1 (ja) * 2004-02-09 2005-08-18 Yoshihiko Okamoto 露光装置及びそれを用いた半導体装置の製造方法
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005076323A1 (ja) 2004-02-10 2005-08-18 Nikon Corporation 露光装置及びデバイス製造方法、メンテナンス方法及び露光方法
JP4479911B2 (ja) * 2004-02-18 2010-06-09 株式会社ニコン 駆動方法、露光方法及び露光装置、並びにデバイス製造方法
JP4720743B2 (ja) * 2004-02-19 2011-07-13 株式会社ニコン 露光装置及び露光方法、デバイス製造方法
US20070030467A1 (en) * 2004-02-19 2007-02-08 Nikon Corporation Exposure apparatus, exposure method, and device fabricating method
JP4572896B2 (ja) * 2004-02-19 2010-11-04 株式会社ニコン 露光装置及びデバイスの製造方法
EP1727188A4 (de) * 2004-02-20 2008-11-26 Nikon Corp Belichtungsvorrichtung, zuführungsverfahren und rückgewinnungsverfahren, belichtungsverfahren und vorrichtungsherstellungsverfahren
WO2005081295A1 (ja) * 2004-02-20 2005-09-01 Nikon Corporation 露光方法、露光装置及び露光システム並びにデバイス製造方法
US20050186513A1 (en) * 2004-02-24 2005-08-25 Martin Letz Liquid and method for liquid immersion lithography
US7741012B1 (en) 2004-03-01 2010-06-22 Advanced Micro Devices, Inc. Method for removal of immersion lithography medium in immersion lithography processes
JP4622340B2 (ja) * 2004-03-04 2011-02-02 株式会社ニコン 露光装置、デバイス製造方法
US7215431B2 (en) * 2004-03-04 2007-05-08 Therma-Wave, Inc. Systems and methods for immersion metrology
JP2005259870A (ja) * 2004-03-10 2005-09-22 Nikon Corp 基板保持装置、ステージ装置及び露光装置並びに露光方法
US8488102B2 (en) * 2004-03-18 2013-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
KR101181683B1 (ko) * 2004-03-25 2012-09-19 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스 제조 방법
KR101707294B1 (ko) * 2004-03-25 2017-02-15 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP2005286068A (ja) 2004-03-29 2005-10-13 Canon Inc 露光装置及び方法
WO2005096354A1 (ja) * 2004-03-30 2005-10-13 Nikon Corporation 露光装置、露光方法及びデバイス製造方法、並びに面形状検出装置
JP4535489B2 (ja) * 2004-03-31 2010-09-01 東京エレクトロン株式会社 塗布・現像装置
US7034917B2 (en) * 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7227619B2 (en) * 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7295283B2 (en) * 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050231695A1 (en) * 2004-04-15 2005-10-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for immersion lithography using high PH immersion fluid
JP4677986B2 (ja) * 2004-04-19 2011-04-27 株式会社ニコン ノズル部材、露光方法、露光装置及びデバイス製造方法
KR100557222B1 (ko) * 2004-04-28 2006-03-07 동부아남반도체 주식회사 이머전 리소그라피 공정의 액체 제거 장치 및 방법
US7244665B2 (en) * 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1747499A2 (de) 2004-05-04 2007-01-31 Nikon Corporation Vorrichtung und verfahren zur bereitstellung eines fluids für die immersionslithographie
US7616383B2 (en) * 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) * 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7796274B2 (en) 2004-06-04 2010-09-14 Carl Zeiss Smt Ag System for measuring the image quality of an optical imaging system
US20070103661A1 (en) * 2004-06-04 2007-05-10 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101264936B1 (ko) * 2004-06-04 2013-05-15 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
EP1780786A4 (de) * 2004-06-07 2009-11-25 Nikon Corp Bühnenvorrichtung, belichtungsvorrichtung und belichtungsverfahren
JP2005353762A (ja) 2004-06-09 2005-12-22 Matsushita Electric Ind Co Ltd 半導体製造装置及びパターン形成方法
KR101440746B1 (ko) * 2004-06-09 2014-09-17 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
CN1965389B (zh) * 2004-06-09 2011-08-10 尼康股份有限公司 基板保持装置、具备其之曝光装置及方法、元件制造方法
JP4543767B2 (ja) * 2004-06-10 2010-09-15 株式会社ニコン 露光装置及びデバイス製造方法
US20070139628A1 (en) * 2004-06-10 2007-06-21 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8373843B2 (en) * 2004-06-10 2013-02-12 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20070222959A1 (en) * 2004-06-10 2007-09-27 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8717533B2 (en) * 2004-06-10 2014-05-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US8482716B2 (en) * 2004-06-10 2013-07-09 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
EP3067750B1 (de) 2004-06-10 2019-01-30 Nikon Corporation Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung der vorrichtung
US8508713B2 (en) * 2004-06-10 2013-08-13 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7481867B2 (en) 2004-06-16 2009-01-27 Edwards Limited Vacuum system for immersion photolithography
KR101259190B1 (ko) * 2004-06-17 2013-04-29 가부시키가이샤 니콘 액침 리소그래피 렌즈에 대한 유체 압력 보상
KR101378688B1 (ko) * 2004-06-21 2014-03-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US8698998B2 (en) * 2004-06-21 2014-04-15 Nikon Corporation Exposure apparatus, method for cleaning member thereof, maintenance method for exposure apparatus, maintenance device, and method for producing device
EP3462241A1 (de) * 2004-06-21 2019-04-03 Nikon Corporation Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung einer vorrichtung
US7517639B2 (en) * 2004-06-23 2009-04-14 Taiwan Semiconductor Manufacturing Co., Ltd. Seal ring arrangements for immersion lithography systems
WO2006000352A1 (de) 2004-06-29 2006-01-05 Carl Zeiss Smt Ag Positioniereinheit und vorrichtung zur justage für ein optisches element
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101202230B1 (ko) * 2004-07-12 2012-11-16 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
WO2006006562A1 (ja) * 2004-07-12 2006-01-19 Nikon Corporation 露光条件の決定方法、露光方法、露光装置、及びデバイス製造方法
CN100490065C (zh) * 2004-07-16 2009-05-20 尼康股份有限公司 光学构件的支撑方法及支撑构造、光学装置、曝光装置、以及元件制造方法
US7161663B2 (en) * 2004-07-22 2007-01-09 Asml Netherlands B.V. Lithographic apparatus
US7224427B2 (en) * 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
CN101002127B (zh) * 2004-08-03 2012-07-04 株式会社尼康 投影光学系统、曝光装置以及曝光方法
EP1791164B2 (de) * 2004-08-03 2014-08-20 Nikon Corporation Belichtungsgeräte, belichtungsverfahren und bauelemente-herstellungsverfahren
TW200615716A (en) * 2004-08-05 2006-05-16 Nikon Corp Stage device and exposure device
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR20070048164A (ko) * 2004-08-18 2007-05-08 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060044533A1 (en) * 2004-08-27 2006-03-02 Asmlholding N.V. System and method for reducing disturbances caused by movement in an immersion lithography system
US20060046211A1 (en) * 2004-08-27 2006-03-02 Taiwan Semiconductor Manufacturing Co., Ltd. Effectively water-free immersion lithography
JP4772306B2 (ja) * 2004-09-06 2011-09-14 株式会社東芝 液浸光学装置及び洗浄方法
JP2006080143A (ja) 2004-09-07 2006-03-23 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
EP1801850B1 (de) 2004-09-17 2014-11-26 Nikon Corporation Substrat und haltevorrichtung, belichtungsvorrichtung und bauelemente-herstellungsverfahren
JPWO2006030910A1 (ja) * 2004-09-17 2008-05-15 株式会社ニコン 露光用基板、露光方法及びデバイス製造方法
US8675174B2 (en) 2004-09-17 2014-03-18 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US7133114B2 (en) * 2004-09-20 2006-11-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060060653A1 (en) * 2004-09-23 2006-03-23 Carl Wittenberg Scanner system and method for simultaneously acquiring data images from multiple object planes
US7522261B2 (en) * 2004-09-24 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7355674B2 (en) * 2004-09-28 2008-04-08 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and computer program product
US7894040B2 (en) 2004-10-05 2011-02-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7209213B2 (en) * 2004-10-07 2007-04-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4613910B2 (ja) * 2004-10-08 2011-01-19 株式会社ニコン 露光装置及びデバイス製造方法
JP4961709B2 (ja) * 2004-10-13 2012-06-27 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
JP2006190971A (ja) * 2004-10-13 2006-07-20 Nikon Corp 露光装置、露光方法及びデバイス製造方法
EP1808884A4 (de) 2004-10-13 2009-12-30 Nikon Corp Belichtungsvorrichtung, belichtungsverfahren und bauelemente-herstellungsverfahren
US20090021709A1 (en) * 2004-10-13 2009-01-22 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
KR101331631B1 (ko) * 2004-10-15 2013-11-20 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
DE102004050642B4 (de) * 2004-10-18 2007-04-12 Infineon Technologies Ag Verfahren zur Überwachung von Parametern eines Belichtungsgerätes für die Immersionslithographie und Belichtungsgerät für die Immersionslithographie
US7119876B2 (en) * 2004-10-18 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7379155B2 (en) 2004-10-18 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN101866113B (zh) * 2004-10-26 2013-04-24 株式会社尼康 衬底处理方法、曝光装置及器件制造方法
US20070242248A1 (en) * 2004-10-26 2007-10-18 Nikon Corporation Substrate processing method, exposure apparatus, and method for producing device
TWI416265B (zh) 2004-11-01 2013-11-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
JP5008280B2 (ja) * 2004-11-10 2012-08-22 株式会社Sokudo 基板処理装置および基板処理方法
JP2006310724A (ja) * 2004-11-10 2006-11-09 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
US8294873B2 (en) 2004-11-11 2012-10-23 Nikon Corporation Exposure method, device manufacturing method, and substrate
US7251013B2 (en) 2004-11-12 2007-07-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7414699B2 (en) * 2004-11-12 2008-08-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7583357B2 (en) * 2004-11-12 2009-09-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7423720B2 (en) * 2004-11-12 2008-09-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411657B2 (en) * 2004-11-17 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TWI649790B (zh) 2004-11-18 2019-02-01 日商尼康股份有限公司 位置測量方法、位置控制方法、測量方法、裝載方法、曝光方法及曝光裝置、及元件製造方法
US7230681B2 (en) * 2004-11-18 2007-06-12 International Business Machines Corporation Method and apparatus for immersion lithography
KR101166008B1 (ko) * 2004-11-19 2012-07-18 가부시키가이샤 니콘 메인터넌스 방법, 노광 방법, 노광 장치 및 디바이스 제조방법
US7145630B2 (en) * 2004-11-23 2006-12-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7732123B2 (en) * 2004-11-23 2010-06-08 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion photolithography with megasonic rinse
US7623218B2 (en) * 2004-11-24 2009-11-24 Carl Zeiss Smt Ag Method of manufacturing a miniaturized device
US20080123067A1 (en) * 2004-11-25 2008-05-29 Nikon Corporation Movable Body System, Exposure Apparatus, And Device Manufacturing Method
US7289193B1 (en) * 2004-12-01 2007-10-30 Advanced Micro Devices, Inc. Frame structure for turbulence control in immersion lithography
US7161654B2 (en) * 2004-12-02 2007-01-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
TW200632576A (en) * 2004-12-02 2006-09-16 Nikon Corp Exposure apparatus, exposure method and manufacturing method of device
EP1843384A4 (de) * 2004-12-02 2010-04-28 Nikon Corp Belichtungseinrichtung und bauelementeherstellungsverfahren
US7256121B2 (en) * 2004-12-02 2007-08-14 Texas Instruments Incorporated Contact resistance reduction by new barrier stack process
US7446850B2 (en) * 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060122038A1 (en) * 2004-12-03 2006-06-08 Tsai Lien Chou Lin Folding and inclination adjustable device for treadmills
JP4926433B2 (ja) 2004-12-06 2012-05-09 株式会社Sokudo 基板処理装置および基板処理方法
WO2006062074A1 (ja) * 2004-12-06 2006-06-15 Nikon Corporation 基板処理方法、露光方法、露光装置及びデバイス製造方法
JP4794232B2 (ja) * 2004-12-06 2011-10-19 株式会社Sokudo 基板処理装置
JP4784513B2 (ja) 2004-12-06 2011-10-05 株式会社ニコン メンテナンス方法、メンテナンス機器、露光装置、及びデバイス製造方法
JP5154007B2 (ja) * 2004-12-06 2013-02-27 株式会社Sokudo 基板処理装置
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7196770B2 (en) * 2004-12-07 2007-03-27 Asml Netherlands B.V. Prewetting of substrate before immersion exposure
US7248334B2 (en) * 2004-12-07 2007-07-24 Asml Netherlands B.V. Sensor shield
US20080100811A1 (en) * 2004-12-07 2008-05-01 Chiaki Nakagawa Exposure Apparatus and Device Manufacturing Method
US7365827B2 (en) * 2004-12-08 2008-04-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4752473B2 (ja) * 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
US7352440B2 (en) 2004-12-10 2008-04-01 Asml Netherlands B.V. Substrate placement in immersion lithography
US7403261B2 (en) * 2004-12-15 2008-07-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101585310B1 (ko) 2004-12-15 2016-01-14 가부시키가이샤 니콘 기판 유지 장치, 노광 장치 및 디바이스 제조방법
US7528931B2 (en) 2004-12-20 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) * 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7405805B2 (en) 2004-12-28 2008-07-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7491661B2 (en) * 2004-12-28 2009-02-17 Asml Netherlands B.V. Device manufacturing method, top coat material and substrate
US20060147821A1 (en) * 2004-12-30 2006-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7450217B2 (en) * 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2006196575A (ja) * 2005-01-12 2006-07-27 Jsr Corp 液浸型露光方法によるレジストパターン形成方法
DE602006012746D1 (de) * 2005-01-14 2010-04-22 Asml Netherlands Bv Lithografische Vorrichtung und Herstellungsverfahren
SG124351A1 (en) 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
CN1804724A (zh) * 2005-01-14 2006-07-19 朱晓 芯片光刻制程中油浸式曝光方法
EP1843386A1 (de) * 2005-01-18 2007-10-10 Nikon Corporation Flüssigkeits-entfernungsvorrichtung, belichtungsvorrichtung und bauelemente-herstellungsverfahren
WO2006080250A1 (ja) * 2005-01-25 2006-08-03 Jsr Corporation 液浸型露光システム、液浸型露光用液体のリサイクル方法及び供給方法
KR20070095272A (ko) * 2005-01-31 2007-09-28 가부시키가이샤 니콘 노광 방법, 노광 장치 및 디바이스 제조 방법
EP3079164A1 (de) 2005-01-31 2016-10-12 Nikon Corporation Belichtungsvorrichtung und herstellungsverfahren einer vorrichtung
US8692973B2 (en) * 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
KR101211570B1 (ko) 2005-02-10 2012-12-12 에이에스엠엘 네델란즈 비.브이. 침지 액체, 노광 장치, 및 노광 프로세스
US20070258068A1 (en) * 2005-02-17 2007-11-08 Hiroto Horikawa Exposure Apparatus, Exposure Method, and Device Fabricating Method
US7378025B2 (en) * 2005-02-22 2008-05-27 Asml Netherlands B.V. Fluid filtration method, fluid filtered thereby, lithographic apparatus and device manufacturing method
US7224431B2 (en) * 2005-02-22 2007-05-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8018573B2 (en) * 2005-02-22 2011-09-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006270057A (ja) * 2005-02-28 2006-10-05 Canon Inc 露光装置
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
US7428038B2 (en) 2005-02-28 2008-09-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and apparatus for de-gassing a liquid
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7684010B2 (en) * 2005-03-09 2010-03-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, seal structure, method of removing an object and a method of sealing
JP2006261606A (ja) * 2005-03-18 2006-09-28 Canon Inc 露光装置、露光方法及びデバイス製造方法
TWI424260B (zh) * 2005-03-18 2014-01-21 尼康股份有限公司 A board member, a substrate holding device, an exposure apparatus and an exposure method, and a device manufacturing method
JP4946109B2 (ja) * 2005-03-18 2012-06-06 株式会社ニコン 露光方法、露光装置、及びデバイス製造方法
US7330238B2 (en) * 2005-03-28 2008-02-12 Asml Netherlands, B.V. Lithographic apparatus, immersion projection apparatus and device manufacturing method
US20090226846A1 (en) * 2005-03-30 2009-09-10 Nikon Corporation Exposure Apparatus, Exposure Method, and Device Manufacturing Method
JP4605219B2 (ja) * 2005-03-30 2011-01-05 株式会社ニコン 露光条件の決定方法、露光方法及び露光装置、並びにデバイス製造方法
TW200644079A (en) * 2005-03-31 2006-12-16 Nikon Corp Exposure apparatus, exposure method, and device production method
WO2006106836A1 (ja) * 2005-03-31 2006-10-12 Nikon Corporation 露光方法、露光装置、及びデバイス製造方法
US7411654B2 (en) 2005-04-05 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7291850B2 (en) * 2005-04-08 2007-11-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
KR101555707B1 (ko) * 2005-04-18 2015-09-25 가부시키가이샤 니콘 노광 장치 및 노광 방법, 그리고 디바이스 제조 방법
US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
EP1876635A4 (de) 2005-04-25 2010-06-30 Nikon Corp Belichtungsverfahren, belichtungsvorrichtung sowie herstellungsverfahren für die vorrichtung
KR20080005362A (ko) * 2005-04-27 2008-01-11 가부시키가이샤 니콘 노광 방법, 노광 장치, 디바이스 제조 방법 및 막의 평가방법
TW200702939A (en) * 2005-04-28 2007-01-16 Nikon Corp Exposure method, exposure apparatus, and device producing method
JP5239337B2 (ja) * 2005-04-28 2013-07-17 株式会社ニコン 露光方法及び露光装置、並びにデバイス製造方法
US20060250588A1 (en) * 2005-05-03 2006-11-09 Stefan Brandl Immersion exposure tool cleaning system and method
US7433016B2 (en) * 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317507B2 (en) * 2005-05-03 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006319064A (ja) * 2005-05-11 2006-11-24 Canon Inc 測定装置、露光方法及び装置
EP2660853B1 (de) 2005-05-12 2017-07-05 Nikon Corporation Optisches Projektionssystem, Belichtungsvorrichtung und Belichtungsverfahren
JP4718893B2 (ja) 2005-05-13 2011-07-06 株式会社東芝 パターン形成方法
US7265815B2 (en) * 2005-05-19 2007-09-04 Asml Holding N.V. System and method utilizing an illumination beam adjusting system
DE102005024163A1 (de) * 2005-05-23 2006-11-30 Carl Zeiss Smt Ag Optisches System einer mikrolithographischen Projektionsbelichtungsanlage
KR100638107B1 (ko) * 2005-06-09 2006-10-24 연세대학교 산학협력단 이머젼 박막층을 구비하는 광변조 미세개구 어레이 장치 및이를 이용한 고속 미세패턴 기록시스템
WO2006133800A1 (en) 2005-06-14 2006-12-21 Carl Zeiss Smt Ag Lithography projection objective, and a method for correcting image defects of the same
US20070085989A1 (en) * 2005-06-21 2007-04-19 Nikon Corporation Exposure apparatus and exposure method, maintenance method, and device manufacturing method
US7751027B2 (en) 2005-06-21 2010-07-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7652746B2 (en) * 2005-06-21 2010-01-26 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7924416B2 (en) * 2005-06-22 2011-04-12 Nikon Corporation Measurement apparatus, exposure apparatus, and device manufacturing method
US20080204682A1 (en) * 2005-06-28 2008-08-28 Nikon Corporation Exposure method and exposure apparatus, and device manufacturing method
WO2007000995A1 (ja) * 2005-06-28 2007-01-04 Nikon Corporation 露光装置及び方法、並びにデバイス製造方法
US7834974B2 (en) * 2005-06-28 2010-11-16 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7474379B2 (en) 2005-06-28 2009-01-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7468779B2 (en) * 2005-06-28 2008-12-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2007001045A1 (ja) * 2005-06-29 2007-01-04 Nikon Corporation 露光装置、基板処理方法、及びデバイス製造方法
JP2007012375A (ja) * 2005-06-29 2007-01-18 Toyota Motor Corp 燃料電池、燃料電池用電極触媒層の製造方法、及び燃料電池の運転方法
US7522258B2 (en) 2005-06-29 2009-04-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method utilizing movement of clean air to reduce contamination
US20070004182A1 (en) * 2005-06-30 2007-01-04 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and system for inhibiting immersion lithography defect formation
JP5194792B2 (ja) * 2005-06-30 2013-05-08 株式会社ニコン 露光装置及び方法、露光装置のメンテナンス方法、並びにデバイス製造方法
US7583358B2 (en) 2005-07-25 2009-09-01 Micron Technology, Inc. Systems and methods for retrieving residual liquid during immersion lens photolithography
US7535644B2 (en) * 2005-08-12 2009-05-19 Asml Netherlands B.V. Lens element, lithographic apparatus, device manufacturing method, and device manufactured thereby
US8054445B2 (en) * 2005-08-16 2011-11-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2007023813A1 (ja) 2005-08-23 2007-03-01 Nikon Corporation 露光装置及び露光方法、並びにデバイス製造方法
US8070145B2 (en) 2005-08-26 2011-12-06 Nikon Corporation Holding unit, assembly system, sputtering unit, and processing method and processing unit
WO2007023941A1 (ja) * 2005-08-26 2007-03-01 Nikon Corporation 保持装置、組立てシステム、スパッタリング装置、並びに加工方法及び加工装置
US7456928B2 (en) 2005-08-29 2008-11-25 Micron Technology, Inc. Systems and methods for controlling ambient pressure during processing of microfeature workpieces, including during immersion lithography
US7812926B2 (en) * 2005-08-31 2010-10-12 Nikon Corporation Optical element, exposure apparatus based on the use of the same, exposure method, and method for producing microdevice
US8111374B2 (en) * 2005-09-09 2012-02-07 Nikon Corporation Analysis method, exposure method, and device manufacturing method
CN101258581B (zh) * 2005-09-09 2011-05-11 株式会社尼康 曝光装置及曝光方法以及设备制造方法
KR20080065609A (ko) * 2005-09-13 2008-07-14 칼 짜이스 에스엠테 아게 마이크로리소그래픽 투사 노광 장치에서 광학 결상 특성을설정하는 방법 및 이러한 타입의 투사 노광 장치
US20070070323A1 (en) * 2005-09-21 2007-03-29 Nikon Corporation Exposure apparatus, exposure method, and device fabricating method
US7357768B2 (en) * 2005-09-22 2008-04-15 William Marshall Recliner exerciser
US8202460B2 (en) * 2005-09-22 2012-06-19 International Business Machines Corporation Microelectronic substrate having removable edge extension element
JP4761907B2 (ja) 2005-09-28 2011-08-31 株式会社Sokudo 基板処理装置
JP4804950B2 (ja) * 2005-09-26 2011-11-02 東京応化工業株式会社 有機膜の液浸リソグラフィ溶解成分測定方法
US7411658B2 (en) * 2005-10-06 2008-08-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2007109741A (ja) * 2005-10-11 2007-04-26 Canon Inc 露光装置及び露光方法
JP2009009954A (ja) * 2005-10-18 2009-01-15 Nikon Corp 露光装置及び露光方法
US20070127135A1 (en) * 2005-11-01 2007-06-07 Nikon Corporation Exposure apparatus, exposure method and device manufacturing method
US20070127002A1 (en) * 2005-11-09 2007-06-07 Nikon Corporation Exposure apparatus and method, and device manufacturing method
US7656501B2 (en) * 2005-11-16 2010-02-02 Asml Netherlands B.V. Lithographic apparatus
US7864292B2 (en) 2005-11-16 2011-01-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7804577B2 (en) 2005-11-16 2010-09-28 Asml Netherlands B.V. Lithographic apparatus
US7803516B2 (en) * 2005-11-21 2010-09-28 Nikon Corporation Exposure method, device manufacturing method using the same, exposure apparatus, and substrate processing method and apparatus
US7633073B2 (en) * 2005-11-23 2009-12-15 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7773195B2 (en) * 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US8125610B2 (en) * 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US20070124987A1 (en) * 2005-12-05 2007-06-07 Brown Jeffrey K Electronic pest control apparatus
KR100768849B1 (ko) * 2005-12-06 2007-10-22 엘지전자 주식회사 계통 연계형 연료전지 시스템의 전원공급장치 및 방법
US7420194B2 (en) * 2005-12-27 2008-09-02 Asml Netherlands B.V. Lithographic apparatus and substrate edge seal
US7242454B1 (en) * 2005-12-28 2007-07-10 Asml Netherlands B.V. Lithographic apparatus, and apparatus and method for measuring an object position in a medium
US8411271B2 (en) * 2005-12-28 2013-04-02 Nikon Corporation Pattern forming method, pattern forming apparatus, and device manufacturing method
US7839483B2 (en) * 2005-12-28 2010-11-23 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a control system
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8472004B2 (en) 2006-01-18 2013-06-25 Micron Technology, Inc. Immersion photolithography scanner
EP3171220A1 (de) 2006-01-19 2017-05-24 Nikon Corporation Belichtungsvorrichtung, belichtungsverfahren und verfahren zur herstellung einer vorrichtung
US7848516B2 (en) * 2006-01-20 2010-12-07 Chiou-Haun Lee Diffused symmetric encryption/decryption method with asymmetric keys
KR100870791B1 (ko) * 2006-02-15 2008-11-27 캐논 가부시끼가이샤 노광장치, 노광방법 및 노광시스템
US8134681B2 (en) * 2006-02-17 2012-03-13 Nikon Corporation Adjustment method, substrate processing method, substrate processing apparatus, exposure apparatus, inspection apparatus, measurement and/or inspection system, processing apparatus, computer system, program and information recording medium
WO2007097380A1 (ja) 2006-02-21 2007-08-30 Nikon Corporation パターン形成装置及びパターン形成方法、移動体駆動システム及び移動体駆動方法、露光装置及び露光方法、並びにデバイス製造方法
JP5195417B2 (ja) 2006-02-21 2013-05-08 株式会社ニコン パターン形成装置、露光装置、露光方法及びデバイス製造方法
US8027021B2 (en) 2006-02-21 2011-09-27 Nikon Corporation Measuring apparatus and method, processing apparatus and method, pattern forming apparatus and method, exposure apparatus and method, and device manufacturing method
US7893047B2 (en) * 2006-03-03 2011-02-22 Arch Chemicals, Inc. Biocide composition comprising pyrithione and pyrrole derivatives
KR20080114691A (ko) * 2006-03-13 2008-12-31 가부시키가이샤 니콘 노광 장치, 메인터넌스 방법, 노광 방법 및 디바이스 제조 방법
US8045134B2 (en) * 2006-03-13 2011-10-25 Asml Netherlands B.V. Lithographic apparatus, control system and device manufacturing method
US9477158B2 (en) 2006-04-14 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006021797A1 (de) * 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
JP5151977B2 (ja) * 2006-05-10 2013-02-27 株式会社ニコン 露光装置及びデバイス製造方法
US7602471B2 (en) * 2006-05-17 2009-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for particle monitoring in immersion lithography
US7969548B2 (en) * 2006-05-22 2011-06-28 Asml Netherlands B.V. Lithographic apparatus and lithographic apparatus cleaning method
JPWO2007139017A1 (ja) * 2006-05-29 2009-10-08 株式会社ニコン 液体回収部材、基板保持部材、露光装置、及びデバイス製造方法
CN100456138C (zh) * 2006-06-13 2009-01-28 上海微电子装备有限公司 浸没式光刻机浸液流场维持系统
WO2008026593A1 (fr) * 2006-08-30 2008-03-06 Nikon Corporation Dispositif d'exposition, procédé de fabrication de dispositif, procédé de nettoyage et élément de nettoyage
TWI572995B (zh) 2006-08-31 2017-03-01 尼康股份有限公司 Exposure method and exposure apparatus, and component manufacturing method
CN103645608B (zh) 2006-08-31 2016-04-20 株式会社尼康 曝光装置及方法、组件制造方法以及决定方法
TWI653511B (zh) 2006-08-31 2019-03-11 日商尼康股份有限公司 Exposure apparatus, exposure method, and component manufacturing method
KR101660668B1 (ko) 2006-09-01 2016-09-27 가부시키가이샤 니콘 이동체 구동 방법 및 이동체 구동 시스템, 패턴 형성 방법 및 장치, 노광 방법 및 장치, 그리고 디바이스 제조 방법
TWI652720B (zh) 2006-09-01 2019-03-01 日商尼康股份有限公司 Exposure method and device and component manufacturing method
US7826030B2 (en) * 2006-09-07 2010-11-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7872730B2 (en) * 2006-09-15 2011-01-18 Nikon Corporation Immersion exposure apparatus and immersion exposure method, and device manufacturing method
US8208116B2 (en) * 2006-11-03 2012-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US8253922B2 (en) 2006-11-03 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
JP5055971B2 (ja) * 2006-11-16 2012-10-24 株式会社ニコン 表面処理方法及び表面処理装置、露光方法及び露光装置、並びにデバイス製造方法
US7973910B2 (en) * 2006-11-17 2011-07-05 Nikon Corporation Stage apparatus and exposure apparatus
US8045135B2 (en) 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
US8040490B2 (en) * 2006-12-01 2011-10-18 Nikon Corporation Liquid immersion exposure apparatus, exposure method, and method for producing device
US8013975B2 (en) * 2006-12-01 2011-09-06 Nikon Corporation Exposure apparatus, exposure method, and method for producing device
US20080156356A1 (en) * 2006-12-05 2008-07-03 Nikon Corporation Cleaning liquid, cleaning method, liquid generating apparatus, exposure apparatus, and device fabricating method
US9632425B2 (en) * 2006-12-07 2017-04-25 Asml Holding N.V. Lithographic apparatus, a dryer and a method of removing liquid from a surface
US8634053B2 (en) 2006-12-07 2014-01-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7791709B2 (en) * 2006-12-08 2010-09-07 Asml Netherlands B.V. Substrate support and lithographic process
US20080137055A1 (en) * 2006-12-08 2008-06-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8654305B2 (en) * 2007-02-15 2014-02-18 Asml Holding N.V. Systems and methods for insitu lens cleaning in immersion lithography
US8817226B2 (en) 2007-02-15 2014-08-26 Asml Holding N.V. Systems and methods for insitu lens cleaning using ozone in immersion lithography
US8237911B2 (en) * 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
US7900641B2 (en) * 2007-05-04 2011-03-08 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US7866330B2 (en) * 2007-05-04 2011-01-11 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US8011377B2 (en) 2007-05-04 2011-09-06 Asml Netherlands B.V. Cleaning device and a lithographic apparatus cleaning method
US8947629B2 (en) * 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
JP2009033111A (ja) * 2007-05-28 2009-02-12 Nikon Corp 露光装置、デバイス製造方法、洗浄装置、及びクリーニング方法並びに露光方法
US8164736B2 (en) * 2007-05-29 2012-04-24 Nikon Corporation Exposure method, exposure apparatus, and method for producing device
US20080304025A1 (en) * 2007-06-08 2008-12-11 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for immersion lithography
DE102007028115B4 (de) * 2007-06-19 2015-10-29 Siemens Aktiengesellschaft Verfahren zur Bestimmung einer für eine Myokardablation bei einem Patienten optimalen Leistung eines Ablationskatheters sowie zugehörige medizinische Einrichtungen
US8446566B2 (en) 2007-09-04 2013-05-21 Asml Netherlands B.V. Method of loading a substrate on a substrate table and lithographic apparatus and device manufacturing method
US20080316461A1 (en) * 2007-06-21 2008-12-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9013682B2 (en) * 2007-06-21 2015-04-21 Asml Netherlands B.V. Clamping device and object loading method
KR100871749B1 (ko) * 2007-07-20 2008-12-05 주식회사 동부하이텍 이머전 리소그라피 장치 및 이를 이용한 패턴 형성 방법
US20090086187A1 (en) * 2007-08-09 2009-04-02 Asml Netherlands Lithographic Apparatus and Device Manufacturing Method
US8681308B2 (en) * 2007-09-13 2014-03-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG151198A1 (en) * 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
JP5498385B2 (ja) * 2007-10-02 2014-05-21 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ用の投影対物系
JP5267029B2 (ja) 2007-10-12 2013-08-21 株式会社ニコン 照明光学装置、露光装置及びデバイスの製造方法
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method
JP4950101B2 (ja) 2008-03-05 2012-06-13 富士フイルム株式会社 フォトレジスト層を有するワークの加工方法
KR101448152B1 (ko) * 2008-03-26 2014-10-07 삼성전자주식회사 수직 포토게이트를 구비한 거리측정 센서 및 그를 구비한입체 컬러 이미지 센서
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
NL2003363A (en) * 2008-09-10 2010-03-15 Asml Netherlands Bv Lithographic apparatus, method of manufacturing an article for a lithographic apparatus and device manufacturing method.
JP2011009309A (ja) * 2009-06-23 2011-01-13 Canon Inc 露光システム、露光装置の制御装置およびデバイス製造方法
JP4748263B2 (ja) * 2009-09-28 2011-08-17 東京エレクトロン株式会社 塗布、現像装置
NL2005207A (en) * 2009-09-28 2011-03-29 Asml Netherlands Bv Heat pipe, lithographic apparatus and device manufacturing method.
MX2012007581A (es) * 2009-12-28 2012-07-30 Pioneer Hi Bred Int Genotipos restauradores de la fertilidad de sorgo y metodos de seleccion asistida por marcadores.
NL2005874A (en) * 2010-01-22 2011-07-25 Asml Netherlands Bv A lithographic apparatus and a device manufacturing method.
JP4985812B2 (ja) * 2010-04-05 2012-07-25 株式会社ニコン 露光装置及びデバイス製造方法
EP2381310B1 (de) 2010-04-22 2015-05-06 ASML Netherlands BV Flüssigkeitshandhabungsstruktur und lithographischer Apparat
JP6362312B2 (ja) 2013-09-09 2018-07-25 キヤノン株式会社 露光装置、それを用いたデバイスの製造方法
US20220397830A1 (en) * 2019-11-18 2022-12-15 Asml Netherlands B.V. A fluid handling system, method and lithographic apparatus
WO2021155991A1 (en) * 2020-02-06 2021-08-12 Asml Netherlands B.V. Method of using a dual stage lithographic apparatus and lithographic apparatus

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4131363A (en) * 1977-12-05 1978-12-26 International Business Machines Corporation Pellicle cover for projection printing system
DE2963537D1 (en) * 1979-07-27 1982-10-07 Tabarelli Werner W Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
US4509852A (en) * 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS60158626A (ja) * 1984-01-30 1985-08-20 Canon Inc 半導体露光装置
DE3584798D1 (de) * 1984-07-17 1992-01-16 Nec Corp Anreizverfahren und vorrichtung fuer photochemische reaktionen.
JPS6197924A (ja) * 1984-10-19 1986-05-16 Nippon Sheet Glass Co Ltd 保護カバ−
US4742376A (en) * 1985-01-14 1988-05-03 Phillips Edward H Step-and-repeat alignment and exposure system
JPS61278141A (ja) * 1985-05-31 1986-12-09 Canon Inc 投影倍率調整方法
US5121256A (en) * 1991-03-14 1992-06-09 The Board Of Trustees Of The Leland Stanford Junior University Lithography system employing a solid immersion lens

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EP0605103A1 (de) 1994-07-06
DE69321571D1 (de) 1998-11-19

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