DE602004022002D1 - Verfahren zur Herstellung eines Galliumnitridsubstrats für Halbleiter und damit hergestelltes Substrats - Google Patents

Verfahren zur Herstellung eines Galliumnitridsubstrats für Halbleiter und damit hergestelltes Substrats

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Publication number
DE602004022002D1
DE602004022002D1 DE602004022002T DE602004022002T DE602004022002D1 DE 602004022002 D1 DE602004022002 D1 DE 602004022002D1 DE 602004022002 T DE602004022002 T DE 602004022002T DE 602004022002 T DE602004022002 T DE 602004022002T DE 602004022002 D1 DE602004022002 D1 DE 602004022002D1
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Prior art keywords
substrate
semiconductors
producing
gallium nitride
made therewith
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DE602004022002T
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English (en)
Inventor
Naoki Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE602004022002D1 publication Critical patent/DE602004022002D1/de
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
DE602004022002T 2003-10-30 2004-10-01 Verfahren zur Herstellung eines Galliumnitridsubstrats für Halbleiter und damit hergestelltes Substrats Active DE602004022002D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003370430A JP4232605B2 (ja) 2003-10-30 2003-10-30 窒化物半導体基板の製造方法と窒化物半導体基板

Publications (1)

Publication Number Publication Date
DE602004022002D1 true DE602004022002D1 (de) 2009-08-27

Family

ID=34420198

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004022002T Active DE602004022002D1 (de) 2003-10-30 2004-10-01 Verfahren zur Herstellung eines Galliumnitridsubstrats für Halbleiter und damit hergestelltes Substrats

Country Status (7)

Country Link
US (5) US7229926B2 (de)
EP (1) EP1528591B1 (de)
JP (1) JP4232605B2 (de)
KR (1) KR20050041988A (de)
CN (2) CN101339926A (de)
DE (1) DE602004022002D1 (de)
TW (1) TWI352379B (de)

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CN111540750B (zh) * 2020-04-27 2021-07-06 长江存储科技有限责任公司 3d存储器件的制造方法
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KR100550491B1 (ko) * 2003-05-06 2006-02-09 스미토모덴키고교가부시키가이샤 질화물 반도체 기판 및 질화물 반도체 기판의 가공 방법
CN101661910B (zh) * 2003-10-27 2012-07-18 住友电气工业株式会社 氮化镓半导体衬底和蓝色发光器件
EP1605502A1 (de) * 2004-06-08 2005-12-14 Interuniversitair Microelektronica Centrum Vzw Transfermethode zur Herstellung von elektronischen Geräten
US20060113545A1 (en) * 2004-10-14 2006-06-01 Weber Eicke R Wide bandgap semiconductor layers on SOD structures
JP4522301B2 (ja) * 2005-03-30 2010-08-11 住友電工デバイス・イノベーション株式会社 半導体基板および半導体装置

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TW200520060A (en) 2005-06-16
US8012882B2 (en) 2011-09-06
US20090029550A1 (en) 2009-01-29
KR20050041988A (ko) 2005-05-04
US20070167021A1 (en) 2007-07-19
CN100424817C (zh) 2008-10-08
US7229926B2 (en) 2007-06-12
CN1612290A (zh) 2005-05-04
US8455367B2 (en) 2013-06-04
EP1528591A2 (de) 2005-05-04
CN101339926A (zh) 2009-01-07
JP4232605B2 (ja) 2009-03-04
EP1528591B1 (de) 2009-07-15
US7446045B2 (en) 2008-11-04
US7411273B2 (en) 2008-08-12
US20120021591A1 (en) 2012-01-26
US20050093101A1 (en) 2005-05-05
EP1528591A3 (de) 2007-03-28

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