CN104538508B - GaN外延用硅衬底材料的翘曲度控制方法 - Google Patents
GaN外延用硅衬底材料的翘曲度控制方法 Download PDFInfo
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- CN104538508B CN104538508B CN201410748480.XA CN201410748480A CN104538508B CN 104538508 B CN104538508 B CN 104538508B CN 201410748480 A CN201410748480 A CN 201410748480A CN 104538508 B CN104538508 B CN 104538508B
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- Prior art keywords
- silicon wafer
- curved surface
- substrate material
- control method
- gan epitaxy
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 60
- 239000010703 silicon Substances 0.000 title claims abstract description 60
- 239000000758 substrate Substances 0.000 title claims abstract description 25
- 239000000463 material Substances 0.000 title claims abstract description 23
- 238000000407 epitaxy Methods 0.000 title claims abstract description 19
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000005498 polishing Methods 0.000 claims abstract description 8
- 230000007306 turnover Effects 0.000 claims abstract description 4
- 238000007740 vapor deposition Methods 0.000 claims description 12
- 239000013078 crystal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02035—Shaping
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410748480.XA CN104538508B (zh) | 2014-12-09 | 2014-12-09 | GaN外延用硅衬底材料的翘曲度控制方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201410748480.XA CN104538508B (zh) | 2014-12-09 | 2014-12-09 | GaN外延用硅衬底材料的翘曲度控制方法 |
Publications (2)
Publication Number | Publication Date |
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CN104538508A CN104538508A (zh) | 2015-04-22 |
CN104538508B true CN104538508B (zh) | 2018-11-23 |
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CN201410748480.XA Active CN104538508B (zh) | 2014-12-09 | 2014-12-09 | GaN外延用硅衬底材料的翘曲度控制方法 |
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CN (1) | CN104538508B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105977352B (zh) * | 2016-06-16 | 2018-03-20 | 厦门乾照光电股份有限公司 | 一种具有生长过程可调节翘曲的发光二极管外延生长方法 |
CN111554563B (zh) * | 2019-02-11 | 2022-07-29 | 苏州能讯高能半导体有限公司 | 外延结构制造方法和外延结构 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101339926A (zh) * | 2003-10-30 | 2009-01-07 | 住友电气工业株式会社 | 半导体用氮化物衬底及其制备方法 |
JP2012214376A (ja) * | 2005-04-07 | 2012-11-08 | Cree Inc | 歪み、反り、及びttvが少ない75ミリメートル炭化珪素ウェハ |
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2014
- 2014-12-09 CN CN201410748480.XA patent/CN104538508B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101339926A (zh) * | 2003-10-30 | 2009-01-07 | 住友电气工业株式会社 | 半导体用氮化物衬底及其制备方法 |
JP2012214376A (ja) * | 2005-04-07 | 2012-11-08 | Cree Inc | 歪み、反り、及びttvが少ない75ミリメートル炭化珪素ウェハ |
Also Published As
Publication number | Publication date |
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CN104538508A (zh) | 2015-04-22 |
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TR01 | Transfer of patent right |
Effective date of registration: 20190717 Address after: 310000 No. 3899 Jiangdong Avenue 709-18, Dajiangdong Industrial Agglomeration Area, Hangzhou, Xiaoshan District, Hangzhou, Zhejiang Province Patentee after: Hangzhou Zhongxin Wafer Semiconductor Co., Ltd. Address before: 200444 Baoshan District, Baoshan City Industrial Park Road, No., Hill Road, No. 181 Patentee before: Shanghai Shenhe Thermo-magenetic Electronic Co., Ltd. |
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TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: 310000 No. 3899 Jiangdong Avenue 709-18, Dajiangdong Industrial Agglomeration Area, Hangzhou, Xiaoshan District, Hangzhou, Zhejiang Province Patentee after: Hangzhou Zhongxin wafer semiconductor Co., Ltd Address before: 310000 No. 3899 Jiangdong Avenue 709-18, Dajiangdong Industrial Agglomeration Area, Hangzhou, Xiaoshan District, Hangzhou, Zhejiang Province Patentee before: Hangzhou Zhongxin Wafer Semiconductor Co., Ltd. |
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CP01 | Change in the name or title of a patent holder |