DE60227022D1 - Verfahren zur Herstellung einer Elektrode für Siliziumkarbidhalbleiter - Google Patents
Verfahren zur Herstellung einer Elektrode für SiliziumkarbidhalbleiterInfo
- Publication number
- DE60227022D1 DE60227022D1 DE60227022T DE60227022T DE60227022D1 DE 60227022 D1 DE60227022 D1 DE 60227022D1 DE 60227022 T DE60227022 T DE 60227022T DE 60227022 T DE60227022 T DE 60227022T DE 60227022 D1 DE60227022 D1 DE 60227022D1
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- producing
- silicon carbide
- carbide semiconductors
- semiconductors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title 1
- 229910010271 silicon carbide Inorganic materials 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/048—Making electrodes
- H01L21/0485—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001090042A JP4545975B2 (ja) | 2001-03-27 | 2001-03-27 | 炭化珪素半導体用電極の製造方法、及び炭化珪素半導体用電極を備える炭化珪素半導体素子の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60227022D1 true DE60227022D1 (de) | 2008-07-24 |
Family
ID=18944880
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60227022T Expired - Lifetime DE60227022D1 (de) | 2001-03-27 | 2002-03-26 | Verfahren zur Herstellung einer Elektrode für Siliziumkarbidhalbleiter |
Country Status (4)
Country | Link |
---|---|
US (2) | US20020145145A1 (de) |
EP (1) | EP1246252B1 (de) |
JP (1) | JP4545975B2 (de) |
DE (1) | DE60227022D1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003282478A (ja) * | 2002-01-17 | 2003-10-03 | Sony Corp | 合金化方法及び配線形成方法、表示素子の形成方法、画像表示装置の製造方法 |
US20050104072A1 (en) * | 2003-08-14 | 2005-05-19 | Slater David B.Jr. | Localized annealing of metal-silicon carbide ohmic contacts and devices so formed |
US7951632B1 (en) * | 2005-01-26 | 2011-05-31 | University Of Central Florida | Optical device and method of making |
US7554055B2 (en) * | 2005-05-03 | 2009-06-30 | Hitachi Global Storage Technologies Netherlands B.V. | Method for making ohmic contact to silicon structures with low thermal loads |
DE102006050360B4 (de) * | 2006-10-25 | 2014-05-15 | Infineon Technologies Austria Ag | Verfahren zum Erzeugen eines elektrischen Kontakts auf SiC |
US9209281B2 (en) | 2007-04-23 | 2015-12-08 | Infineon Technologies Ag | Method of manufacturing a device by locally heating one or more metallization layers and by means of selective etching |
US7851352B2 (en) * | 2007-05-11 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd | Manufacturing method of semiconductor device and electronic device |
JP5282382B2 (ja) * | 2007-08-17 | 2013-09-04 | 富士電機株式会社 | 炭化珪素半導体装置、その製造方法および炭化珪素デバイス |
JP2009272530A (ja) * | 2008-05-09 | 2009-11-19 | Sharp Corp | 半導体装置とその製造方法 |
CN102171557B (zh) * | 2008-09-19 | 2016-10-19 | 安晟信医疗科技控股公司 | 具有增强的电化学活性的电化学装置及其制造方法 |
US20110124146A1 (en) * | 2009-05-29 | 2011-05-26 | Pitera Arthur J | Methods of forming high-efficiency multi-junction solar cell structures |
JP5439215B2 (ja) | 2010-02-10 | 2014-03-12 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
JP5724887B2 (ja) * | 2012-01-16 | 2015-05-27 | トヨタ自動車株式会社 | 半導体装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5243204A (en) * | 1990-05-18 | 1993-09-07 | Sharp Kabushiki Kaisha | Silicon carbide light emitting diode and a method for the same |
JP2901788B2 (ja) * | 1991-07-19 | 1999-06-07 | ローム株式会社 | 炭化珪素半導体装置 |
US5313078A (en) * | 1991-12-04 | 1994-05-17 | Sharp Kabushiki Kaisha | Multi-layer silicon carbide light emitting diode having a PN junction |
JPH07254701A (ja) * | 1994-03-15 | 1995-10-03 | Nec Corp | 半導体装置及びその製造方法 |
US5474619A (en) * | 1994-05-04 | 1995-12-12 | The United States Of America As Represented By The Secretary Of Commerce | Thin film high temperature silicide thermocouples |
US5442200A (en) * | 1994-06-03 | 1995-08-15 | Advanced Technology Materials, Inc. | Low resistance, stable ohmic contacts to silcon carbide, and method of making the same |
JP3315541B2 (ja) | 1994-11-04 | 2002-08-19 | 新日本無線株式会社 | SiCへの電極の形成方法 |
SE504916C2 (sv) * | 1995-01-18 | 1997-05-26 | Ericsson Telefon Ab L M | Förfarande för att åstadkomma en ohmsk kontakt jämte halvledarkomponent försedd med dylik ohmsk kontakt |
JP3361061B2 (ja) * | 1998-09-17 | 2003-01-07 | 株式会社東芝 | 半導体装置 |
JP3953696B2 (ja) * | 1999-12-24 | 2007-08-08 | 新日本無線株式会社 | 半導体装置の製造方法 |
-
2001
- 2001-03-27 JP JP2001090042A patent/JP4545975B2/ja not_active Expired - Fee Related
-
2002
- 2002-03-26 US US10/105,269 patent/US20020145145A1/en not_active Abandoned
- 2002-03-26 EP EP02252154A patent/EP1246252B1/de not_active Expired - Lifetime
- 2002-03-26 DE DE60227022T patent/DE60227022D1/de not_active Expired - Lifetime
-
2003
- 2003-11-24 US US10/718,691 patent/US6770508B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20020145145A1 (en) | 2002-10-10 |
JP4545975B2 (ja) | 2010-09-15 |
EP1246252A3 (de) | 2007-01-03 |
EP1246252B1 (de) | 2008-06-11 |
JP2002289555A (ja) | 2002-10-04 |
EP1246252A2 (de) | 2002-10-02 |
US20040099866A1 (en) | 2004-05-27 |
US6770508B2 (en) | 2004-08-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8328 | Change in the person/name/address of the agent |
Representative=s name: KLUNKER, SCHMITT-NILSON, HIRSCH, 80797 MUENCHEN |
|
8364 | No opposition during term of opposition |