DE69830024D1 - Verfahren zur Herstellung polykristalliner Halbleiter - Google Patents
Verfahren zur Herstellung polykristalliner HalbleiterInfo
- Publication number
- DE69830024D1 DE69830024D1 DE69830024T DE69830024T DE69830024D1 DE 69830024 D1 DE69830024 D1 DE 69830024D1 DE 69830024 T DE69830024 T DE 69830024T DE 69830024 T DE69830024 T DE 69830024T DE 69830024 D1 DE69830024 D1 DE 69830024D1
- Authority
- DE
- Germany
- Prior art keywords
- producing polycrystalline
- polycrystalline semiconductors
- semiconductors
- producing
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T83/00—Cutting
- Y10T83/444—Tool engages work during dwell of intermittent workfeed
- Y10T83/4475—Tool has motion additional to cutting stroke during tool cycle
- Y10T83/4478—Tool has additional motion during work dwell
- Y10T83/448—Included in plural cutting cycles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T83/00—Cutting
- Y10T83/444—Tool engages work during dwell of intermittent workfeed
- Y10T83/4493—Tool motion initiates work feed and vice versa
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17736097A JP3523986B2 (ja) | 1997-07-02 | 1997-07-02 | 多結晶半導体の製造方法および製造装置 |
JP17736097 | 1997-07-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69830024D1 true DE69830024D1 (de) | 2005-06-09 |
DE69830024T2 DE69830024T2 (de) | 2006-02-23 |
Family
ID=16029609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69830024T Expired - Lifetime DE69830024T2 (de) | 1997-07-02 | 1998-06-26 | Verfahren zur Herstellung polykristalliner Halbleiter |
Country Status (5)
Country | Link |
---|---|
US (1) | US6110274A (de) |
EP (1) | EP0889148B1 (de) |
JP (1) | JP3523986B2 (de) |
CN (1) | CN1115427C (de) |
DE (1) | DE69830024T2 (de) |
Families Citing this family (60)
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---|---|---|---|---|
US6544333B2 (en) | 1997-12-15 | 2003-04-08 | Advanced Silicon Materials Llc | Chemical vapor deposition system for polycrystalline silicon rod production |
US7014707B2 (en) | 1999-01-20 | 2006-03-21 | Canon Kabushiki Kaisha | Apparatus and process for producing crystal article, and thermocouple used therein |
US6660643B1 (en) * | 1999-03-03 | 2003-12-09 | Rwe Schott Solar, Inc. | Etching of semiconductor wafer edges |
US6352192B1 (en) * | 2000-02-29 | 2002-03-05 | Motorola, Inc. | System and method to control solder reflow furnace with wafer surface characterization |
JP4383626B2 (ja) * | 2000-04-13 | 2009-12-16 | キヤノン株式会社 | 位置決め装置および露光装置 |
EP1193493A1 (de) * | 2000-09-29 | 2002-04-03 | Infineon Technologies SC300 GmbH & Co. KG | Verfahren und Vorrichtung zum Messen und Regeln des Wassergehalts einer wässrigen Lösung |
JP2002170780A (ja) * | 2000-12-01 | 2002-06-14 | Sharp Corp | ルツボおよびそれを使用した多結晶シリコンの成長方法 |
US20030070606A1 (en) * | 2001-10-05 | 2003-04-17 | Leblond Nicolas | Preparation of feedstock of alkaline earth and alkali metal fluorides |
JP2003128411A (ja) | 2001-10-18 | 2003-05-08 | Sharp Corp | 板状シリコン、板状シリコンの製造方法および太陽電池 |
JP4658453B2 (ja) * | 2002-11-14 | 2011-03-23 | ヘムロック・セミコンダクター・コーポレーション | 流動性チップ、それを製造する方法及び使用する方法並びにその方法の実施に用いる装置 |
ATE430906T1 (de) * | 2003-03-06 | 2009-05-15 | Leco Corp | Analytischer ofen mit prädiktiver temperaturregelung |
CN100525545C (zh) * | 2003-03-06 | 2009-08-05 | 莱克公司 | 具有可预测的温度控制的分析炉 |
US20050139256A1 (en) * | 2003-12-31 | 2005-06-30 | Korman Charles S. | Solar cell assembly for use in an outer space environment or a non-earth environment |
US20050139253A1 (en) * | 2003-12-31 | 2005-06-30 | Korman Charles S. | Solar cell assembly for use in an outer space environment or a non-earth environment |
US20050139255A1 (en) * | 2003-12-31 | 2005-06-30 | Korman Charles S. | Solar cell assembly for use in an outer space environment or a non-earth environment |
JP4741221B2 (ja) * | 2004-11-25 | 2011-08-03 | 京セラ株式会社 | 多結晶シリコンの鋳造方法とこれを用いた多結晶シリコンインゴット、多結晶シリコン基板並びに太陽電池素子 |
CN101133191A (zh) * | 2005-02-03 | 2008-02-27 | Rec斯坎沃佛股份有限公司 | 用于由半导体材料制造定向凝固块的方法和装置 |
JP4766882B2 (ja) * | 2005-02-08 | 2011-09-07 | 新日鉄マテリアルズ株式会社 | シリコン凝固精製装置及び凝固精製方法 |
JP5106387B2 (ja) * | 2005-05-12 | 2012-12-26 | インテレクチュアル ヴェンチャーズ ホールディング 40 リミテッド ライアビリティ カンパニー | 単結晶金属成長方法並びにその装置 |
JP2006335582A (ja) * | 2005-05-31 | 2006-12-14 | Daiichi Kiden:Kk | 結晶シリコン製造装置とその製造方法 |
WO2007020706A1 (ja) * | 2005-08-19 | 2007-02-22 | Sumco Solar Corporation | シリコン電磁鋳造装置およびその操作方法 |
JP4817761B2 (ja) * | 2005-08-30 | 2011-11-16 | 京セラ株式会社 | 半導体インゴット及び太陽電池素子の製造方法 |
KR100706790B1 (ko) * | 2005-12-01 | 2007-04-12 | 삼성전자주식회사 | 산화 처리 장치 및 방법 |
EP1974077A2 (de) * | 2006-01-20 | 2008-10-01 | BP Corporation North America Inc. | Verfahren und vorrichtungen zur herstellung von monokristallin-formsilicium und monokristallin-formsiliciumkörper für die fotovoltaik |
JP4732219B2 (ja) * | 2006-04-03 | 2011-07-27 | 相模サーボ株式会社 | 高純度シリコン製造方法及び高純度シリコン製造装置 |
JP5347214B2 (ja) * | 2006-06-12 | 2013-11-20 | 東京エレクトロン株式会社 | 載置台構造及び熱処理装置 |
JP2007332022A (ja) * | 2006-06-13 | 2007-12-27 | Young Sang Cho | 多結晶シリコンインゴット製造装置 |
EP2035604A1 (de) * | 2006-06-23 | 2009-03-18 | Rec Scanwafer AS | Vorrichtung und verfahren zur herstellung von silicium mit halbleiterqualität |
JP2008108703A (ja) * | 2006-09-28 | 2008-05-08 | Covalent Materials Corp | 面状ヒータ及びこのヒータを備えた半導体熱処理装置 |
JP5181171B2 (ja) * | 2006-11-16 | 2013-04-10 | Sumco Techxiv株式会社 | 半導体単結晶製造方法 |
KR100852686B1 (ko) * | 2007-01-19 | 2008-08-19 | 주식회사 글로실 | 태양전지용 다결정 실리콘 주괴 제조 장치 |
FR2918675B1 (fr) * | 2007-07-10 | 2009-08-28 | Commissariat Energie Atomique | Dispositif de fabrication d'un bloc de materiau cristallin avec modulation de la conductivite thermique. |
US20100197070A1 (en) * | 2007-07-20 | 2010-08-05 | BP Corproation North America Inc. | Methods and Apparatuses for Manufacturing Cast Silicon From Seed Crystals |
WO2009033255A1 (en) * | 2007-09-13 | 2009-03-19 | Silicium Bécancour Inc. | Process for the production of medium and high purity silicon from metallurgical grade silicon |
WO2010005705A1 (en) * | 2008-06-16 | 2010-01-14 | Gt Solar Incorporated | Systems and methods for growing monocrystalline silicon ingots by directional solidification |
US8459132B2 (en) * | 2008-08-28 | 2013-06-11 | Advanced Metallurgical Group Idealcast Solar Corp. | Systems and methods for monitoring a solid-liquid interface |
US20110179992A1 (en) * | 2008-10-24 | 2011-07-28 | Schwerdtfeger Jr Carl Richard | Crystal growth methods and systems |
IT1396762B1 (it) * | 2009-10-21 | 2012-12-14 | Saet Spa | Dispositivo per l'ottenimento di un materiale semiconduttore multicristallino, in particolare silicio, e metodo per il controllo della temperatura nello stesso |
WO2011050170A2 (en) * | 2009-10-22 | 2011-04-28 | Advanced Renewable Energy Company Llc | Crystal growth methods and systems |
TWI393805B (zh) * | 2009-11-16 | 2013-04-21 | Masahiro Hoshino | Purification method of metallurgical silicon |
US8647433B2 (en) * | 2009-12-13 | 2014-02-11 | Axt, Inc. | Germanium ingots/wafers having low micro-pit density (MPD) as well as systems and methods for manufacturing same |
CN102140686A (zh) * | 2010-02-03 | 2011-08-03 | 中国科学院福建物质结构研究所 | 一种新型的多晶硅熔炼炉 |
US20110210470A1 (en) * | 2010-02-26 | 2011-09-01 | 6N Silicon Inc. | Crucible and method for furnace capacity utilization |
TW201142093A (en) * | 2010-03-12 | 2011-12-01 | Gt Solar Inc | Crystal growth apparatus with load-centered aperture, and device and method for controlling heat extraction from a crucible |
CN103221340B (zh) * | 2010-11-29 | 2016-06-15 | 株式会社爱发科 | 硅精炼装置以及硅精炼方法 |
CN102031556B (zh) * | 2010-12-31 | 2012-05-02 | 常州天合光能有限公司 | 一种多晶铸锭晶体的生长工艺 |
DE102011002599B4 (de) * | 2011-01-12 | 2016-06-23 | Solarworld Innovations Gmbh | Verfahren zur Herstellung eines Silizium-Ingots und Silizium-Ingot |
TWI539039B (zh) * | 2012-01-26 | 2016-06-21 | 希利柯爾材料股份有限公司 | 矽的純化方法 |
US20130192516A1 (en) * | 2012-01-27 | 2013-08-01 | Memc Singapore Pte. Ltd. (Uen200614794D) | Method of preparing cast silicon by directional solidification |
CN104245579A (zh) * | 2012-02-06 | 2014-12-24 | 菲罗索拉硅太阳能公司 | 金属或半导体熔融液的精制方法和真空精制装置 |
TW201402885A (zh) * | 2012-07-06 | 2014-01-16 | Motech Ind Inc | 多晶矽晶塊的製造方法 |
CN103924293B (zh) * | 2013-01-10 | 2016-03-16 | 浙江精功科技股份有限公司 | 一种底部增强冷却装置及其冷却方法 |
CN103352248B (zh) * | 2013-07-17 | 2015-06-24 | 英利能源(中国)有限公司 | 多晶硅的结晶工艺和多晶硅的铸锭工艺 |
JP6197680B2 (ja) * | 2014-02-12 | 2017-09-20 | 信越半導体株式会社 | シリコン単結晶製造装置 |
CN103966657B (zh) * | 2014-04-17 | 2017-04-19 | 江苏盎华光伏工程技术研究中心有限公司 | 一种多晶硅和准单晶硅铸锭炉及其使用方法 |
DE102016010974A1 (de) | 2016-09-13 | 2018-03-15 | Universität Augsburg | Materialumwandlungs-Anordnung und Verfahren |
JP7385560B2 (ja) * | 2017-10-05 | 2023-11-22 | ラム リサーチ コーポレーション | シリコンチューブを製造するための炉および鋳型を含む電磁鋳造システム |
JP7186534B2 (ja) * | 2018-07-25 | 2022-12-09 | 昭和電工株式会社 | 結晶成長装置 |
JP2023514608A (ja) * | 2020-02-19 | 2023-04-06 | リーディング エッジ イクウィップメント テクノロジーズ インコーポレイテッド | 溶融物の表面に形成された結晶シートのアクティブエッジ制御 |
WO2024053095A1 (ja) * | 2022-09-09 | 2024-03-14 | 京セラ株式会社 | 制御装置及び製造システム |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3898051A (en) * | 1973-12-28 | 1975-08-05 | Crystal Syst | Crystal growing |
DE2745247C3 (de) * | 1977-10-07 | 1980-03-13 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren und Vorrichtung zur semikontinuierlichen Herstellung von Siliciumformkörpern |
DE3323896A1 (de) * | 1983-07-02 | 1985-01-17 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren und vorrichtung zum gerichteten erstarren von schmelzen |
IT1178785B (it) * | 1984-12-21 | 1987-09-16 | Pragma Spa | Procedimento per la preparazione di materiali policristallini ed apparechiatura atta alla sua realizzazione |
US4944925A (en) * | 1985-06-10 | 1990-07-31 | Sumitomo Electric Industries, Ltd. | Apparatus for producing single crystals |
JPS62260710A (ja) * | 1986-05-06 | 1987-11-13 | Osaka Titanium Seizo Kk | 多結晶シリコン半導体鋳造法 |
DE4018924A1 (de) * | 1990-06-13 | 1991-12-19 | Leybold Ag | Verfahren zur herstellung von gerichtet erstarrten giessteilen |
KR0157323B1 (ko) * | 1991-12-31 | 1999-02-18 | 황선두 | 국부 용융역 형성법을 이용한 망간-아연 페라이트 단결정의 제조방법 및 그 장치 |
DE4236827A1 (de) * | 1992-10-30 | 1994-05-05 | Wacker Chemitronic | Vorrichtung zur Herstellung multikristalliner Halbleiter-Blöcke mit kolumnarer Kristallstruktur |
GB2279585B (en) * | 1993-07-08 | 1996-11-20 | Crystalox Ltd | Crystallising molten materials |
JP3242292B2 (ja) * | 1995-06-15 | 2001-12-25 | シャープ株式会社 | 多結晶半導体の製造方法および製造装置 |
JP3388664B2 (ja) * | 1995-12-28 | 2003-03-24 | シャープ株式会社 | 多結晶半導体の製造方法および製造装置 |
-
1997
- 1997-07-02 JP JP17736097A patent/JP3523986B2/ja not_active Expired - Fee Related
-
1998
- 1998-06-26 DE DE69830024T patent/DE69830024T2/de not_active Expired - Lifetime
- 1998-06-26 EP EP98111872A patent/EP0889148B1/de not_active Expired - Lifetime
- 1998-07-01 US US09/108,371 patent/US6110274A/en not_active Expired - Lifetime
- 1998-07-02 CN CN98115917.6A patent/CN1115427C/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6110274A (en) | 2000-08-29 |
CN1115427C (zh) | 2003-07-23 |
DE69830024T2 (de) | 2006-02-23 |
EP0889148A1 (de) | 1999-01-07 |
JPH1121120A (ja) | 1999-01-26 |
EP0889148B1 (de) | 2005-05-04 |
JP3523986B2 (ja) | 2004-04-26 |
CN1204704A (zh) | 1999-01-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |