DE60235864D1 - Belichtungsgerät und Verfahren zur Herstellung eines Halbleiterbauelements mit dem Gerät - Google Patents

Belichtungsgerät und Verfahren zur Herstellung eines Halbleiterbauelements mit dem Gerät

Info

Publication number
DE60235864D1
DE60235864D1 DE60235864T DE60235864T DE60235864D1 DE 60235864 D1 DE60235864 D1 DE 60235864D1 DE 60235864 T DE60235864 T DE 60235864T DE 60235864 T DE60235864 T DE 60235864T DE 60235864 D1 DE60235864 D1 DE 60235864D1
Authority
DE
Germany
Prior art keywords
producing
exposure
semiconductor
semiconductor device
exposure device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60235864T
Other languages
English (en)
Inventor
Kenji Ookubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE60235864D1 publication Critical patent/DE60235864D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/12—Halides
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • G01N21/73—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/19—Halogen containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T436/00—Chemistry: analytical and immunological testing
    • Y10T436/24—Nuclear magnetic resonance, electron spin resonance or other spin effects or mass spectrometry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • General Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Plasma & Fusion (AREA)
  • Environmental & Geological Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Optics & Photonics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
DE60235864T 2001-07-05 2002-07-04 Belichtungsgerät und Verfahren zur Herstellung eines Halbleiterbauelements mit dem Gerät Expired - Lifetime DE60235864D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001205469A JP2003021619A (ja) 2001-07-05 2001-07-05 蛍石及びその分析法、製造法、光学特性評価法

Publications (1)

Publication Number Publication Date
DE60235864D1 true DE60235864D1 (de) 2010-05-20

Family

ID=19041773

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60235864T Expired - Lifetime DE60235864D1 (de) 2001-07-05 2002-07-04 Belichtungsgerät und Verfahren zur Herstellung eines Halbleiterbauelements mit dem Gerät

Country Status (4)

Country Link
US (2) US7035306B2 (de)
EP (1) EP1310458B1 (de)
JP (1) JP2003021619A (de)
DE (1) DE60235864D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006025044A1 (de) * 2005-08-10 2007-02-15 Carl Zeiss Smt Ag Abbildungssystem, insbesondere Projektionsobjektiv einer mikrolithographischen Projektionsbelichtungsanlage
JP2009505124A (ja) * 2005-08-10 2009-02-05 カール・ツァイス・エスエムティー・アーゲー 像投影システム、特に、マイクロリソグラフィ投影露光装置の投影対物レンズ
WO2007025341A1 (en) * 2005-08-31 2007-03-08 The University Of Queensland Visual display for blood pressure
WO2011034185A1 (ja) * 2009-09-18 2011-03-24 財団法人 北九州産業学術推進機構 希土類イオンの検出方法及び希土類イオン検出用キット
WO2012011373A1 (ja) * 2010-07-22 2012-01-26 日本結晶光学株式会社 蛍石の製造方法
CN102735514A (zh) * 2012-07-23 2012-10-17 武钢集团昆明钢铁股份有限公司 锰矿中铁、铝、钙、镁、铅、铜、锌和磷含量的测定方法
JP6683011B2 (ja) * 2016-05-19 2020-04-15 王子ホールディングス株式会社 質量分析方法
CN106990098A (zh) * 2017-04-14 2017-07-28 山东南山铝业股份有限公司 联合测定铝电解质中各元素含量的方法
CN107037038A (zh) * 2017-04-14 2017-08-11 山东南山铝业股份有限公司 联合测定铝电解质中各元素含量的方法
CN108693168A (zh) * 2018-05-18 2018-10-23 中国工程物理研究院化工材料研究所 超高纯镱化合物中十四种痕量杂质稀土金属和十种痕量杂质非稀土金属离子含量的检测方法
CN110530962B (zh) * 2019-08-26 2020-07-10 中国科学院地质与地球物理研究所 一种无需稀释剂的地质样品钐-钕同位素同时质谱测试的方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1298959C (en) * 1985-09-28 1992-04-21 Kohzo Hakuta Method of refining rare gas halide excimer laser gas
IT1229210B (it) * 1988-03-31 1991-07-25 Central Glass Co Ltd Metodo e dispositivo per analizzare gas contenenti fluoro.
US6878201B2 (en) * 1996-03-22 2005-04-12 Canon Kabushiki Kaisha Methods of making fluoride crystal and fluoride crystal lens
JP3337638B2 (ja) 1997-03-31 2002-10-21 キヤノン株式会社 フッ化物結晶の製造方法及び光学部品の製造方法
KR20010031779A (ko) 1997-11-07 2001-04-16 오노 시게오 투영 노광 장치, 투영 노광 방법 및 그 장치의 제조 방법
US5978406A (en) * 1998-01-30 1999-11-02 Cymer, Inc. Fluorine control system for excimer lasers
US6240117B1 (en) * 1998-01-30 2001-05-29 Cymer, Inc. Fluorine control system with fluorine monitor
JP2000119097A (ja) 1998-10-14 2000-04-25 Nikon Corp フッ化カルシウム結晶製造方法およびレンズ
JP3631063B2 (ja) 1998-10-21 2005-03-23 キヤノン株式会社 フッ化物の精製方法及びフッ化物結晶の製造方法
US6804285B2 (en) * 1998-10-29 2004-10-12 Canon Kabushiki Kaisha Gas supply path structure for a gas laser
EP1094350A3 (de) * 1999-10-21 2001-08-16 Carl Zeiss Optisches Projektionslinsensystem

Also Published As

Publication number Publication date
EP1310458B1 (de) 2010-04-07
EP1310458A2 (de) 2003-05-14
EP1310458A3 (de) 2003-10-08
US20030027349A1 (en) 2003-02-06
US20060153263A1 (en) 2006-07-13
US7651861B2 (en) 2010-01-26
US7035306B2 (en) 2006-04-25
JP2003021619A (ja) 2003-01-24

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