DE602006006370D1 - Verfahren zur Oberflächenbehandlung von III-V-Halbleitersubstraten und Verfahren zur Herstellung von III-V-Verbindungshalbleitern - Google Patents

Verfahren zur Oberflächenbehandlung von III-V-Halbleitersubstraten und Verfahren zur Herstellung von III-V-Verbindungshalbleitern

Info

Publication number
DE602006006370D1
DE602006006370D1 DE602006006370T DE602006006370T DE602006006370D1 DE 602006006370 D1 DE602006006370 D1 DE 602006006370D1 DE 602006006370 T DE602006006370 T DE 602006006370T DE 602006006370 T DE602006006370 T DE 602006006370T DE 602006006370 D1 DE602006006370 D1 DE 602006006370D1
Authority
DE
Germany
Prior art keywords
iii
preparation
surface treatment
semiconductor substrates
compound semiconductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602006006370T
Other languages
English (en)
Inventor
Takayuki Nishiura
Tomoki Uemura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE602006006370D1 publication Critical patent/DE602006006370D1/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE602006006370T 2005-06-22 2006-06-12 Verfahren zur Oberflächenbehandlung von III-V-Halbleitersubstraten und Verfahren zur Herstellung von III-V-Verbindungshalbleitern Expired - Fee Related DE602006006370D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005182217A JP2007005472A (ja) 2005-06-22 2005-06-22 基板の表面処理方法およびｉｉｉ−ｖ族化合物半導体の製造方法

Publications (1)

Publication Number Publication Date
DE602006006370D1 true DE602006006370D1 (de) 2009-06-04

Family

ID=36821871

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006006370T Expired - Fee Related DE602006006370D1 (de) 2005-06-22 2006-06-12 Verfahren zur Oberflächenbehandlung von III-V-Halbleitersubstraten und Verfahren zur Herstellung von III-V-Verbindungshalbleitern

Country Status (7)

Country Link
US (1) US7432186B2 (de)
EP (1) EP1737026B1 (de)
JP (1) JP2007005472A (de)
KR (1) KR20060134810A (de)
CN (1) CN1885499A (de)
DE (1) DE602006006370D1 (de)
TW (1) TW200703485A (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007234952A (ja) * 2006-03-02 2007-09-13 Sumitomo Electric Ind Ltd 化合物半導体基板の表面処理方法、化合物半導体の製造方法、化合物半導体基板、および半導体ウエハ
TWI410422B (zh) 2007-01-15 2013-10-01 Mitsubishi Tanabe Pharma Corp 縮合四氫喹啉衍生物及其醫藥用途
JP4934079B2 (ja) * 2008-02-28 2012-05-16 信越半導体株式会社 超音波洗浄装置及び超音波洗浄方法
JP4697272B2 (ja) * 2008-07-18 2011-06-08 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体基板の製造方法およびエピタキシャルウエハの製造方法
US8226772B2 (en) * 2009-01-08 2012-07-24 Micron Technology, Inc. Methods of removing particles from over semiconductor substrates
JP5471001B2 (ja) * 2009-04-20 2014-04-16 住友電気工業株式会社 インジウムリン基板の製造方法、エピタキシャルウエハの製造方法、インジウムリン基板およびエピタキシャルウエハ
JP2011205058A (ja) * 2009-12-17 2011-10-13 Rohm & Haas Electronic Materials Llc 半導体基体をテクスチャ化する改良された方法
US20130052774A1 (en) * 2010-06-29 2013-02-28 Kyocera Corporation Method for surface-treating semiconductor substrate, semiconductor substrate, and method for producing solar battery
CN102468125B (zh) * 2010-11-01 2015-10-14 中芯国际集成电路制造(上海)有限公司 一种晶片的清洗方法
CN102956450B (zh) * 2011-08-16 2015-03-11 中芯国际集成电路制造(北京)有限公司 一种制作半导体器件的方法
US20130068248A1 (en) * 2011-09-15 2013-03-21 Taiwan Semiconductor Manufacturing Company, Ltd., ("Tsmc") Semiconductor device cleaning method
CN102456549B (zh) * 2011-11-08 2014-06-25 北京通美晶体技术有限公司 磷化铟晶片及其表面清洗方法
US9263275B2 (en) 2013-03-12 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
US9105578B2 (en) * 2013-03-12 2015-08-11 Taiwan Semiconductor Manufacturing Company, Ltd. Interface for metal gate integration
CN103236396B (zh) * 2013-04-16 2016-07-06 中国电子科技集团公司第十一研究所 一种外延InSb衬底的表面处理方法
US9280998B1 (en) 2015-03-30 2016-03-08 WD Media, LLC Acidic post-sputter wash for magnetic recording media
EP3139416B1 (de) * 2015-09-07 2020-10-28 IMEC vzw Texturierung von monokristallinen siliciumsubstraten
TWI586444B (zh) * 2015-09-09 2017-06-11 日月光半導體製造股份有限公司 清洗裝置以及用於清洗ｉｃ基板傳送滾輪之清洗液
CN105710066B (zh) * 2016-03-16 2018-03-13 中锗科技有限公司 一种去除太阳能锗单晶片抛光残留药剂的方法
JP6918600B2 (ja) * 2016-07-29 2021-08-11 芝浦メカトロニクス株式会社 処理液生成装置及びそれを用いた基板処理装置
JP6477990B1 (ja) * 2017-05-26 2019-03-06 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物半導体基板およびエピタキシャル層付ｉｉｉ−ｖ族化合物半導体基板

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62252140A (ja) * 1986-04-25 1987-11-02 Nippon Mining Co Ltd ＩｎＰウエ−ハの洗浄方法
US5419808A (en) * 1993-03-19 1995-05-30 Mitsubishi Denki Kabushiki Kaisha Etching solution and etching method for semiconductors
JP3422117B2 (ja) * 1994-01-28 2003-06-30 和光純薬工業株式会社 新規な表面処理方法及び処理剤
US5763016A (en) * 1996-12-19 1998-06-09 Anon, Incorporated Method of forming patterns in organic coatings films and layers
JPH11111703A (ja) * 1997-09-30 1999-04-23 Akihiko Yoshikawa Ｉｉ−ｖｉ族化合物半導体のエッチング方法
US7208049B2 (en) * 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
JP2001044169A (ja) * 1999-05-25 2001-02-16 Sharp Corp 半導体のエッチング液、調製方法及びエッチング方法
JP4110220B2 (ja) 1999-12-28 2008-07-02 Ｄｏｗａエレクトロニクス株式会社 化合物半導体基板又は下地膜の表面処理方法、化合物単結晶膜を有する化合物半導体基板及び半導体装置
JP4752117B2 (ja) * 2001-02-08 2011-08-17 日本テキサス・インスツルメンツ株式会社 半導体ウェハ上の粒子を除去する方法
JP2003174021A (ja) * 2001-12-06 2003-06-20 Sharp Corp 半導体基板の選択的エッチング方法
US7259084B2 (en) * 2003-07-28 2007-08-21 National Chiao-Tung University Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer

Also Published As

Publication number Publication date
KR20060134810A (ko) 2006-12-28
TW200703485A (en) 2007-01-16
EP1737026A1 (de) 2006-12-27
EP1737026B1 (de) 2009-04-22
CN1885499A (zh) 2006-12-27
US20070014915A1 (en) 2007-01-18
JP2007005472A (ja) 2007-01-11
US7432186B2 (en) 2008-10-07

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee