JP4697272B2 - Iii−v族化合物半導体基板の製造方法およびエピタキシャルウエハの製造方法 - Google Patents
Iii−v族化合物半導体基板の製造方法およびエピタキシャルウエハの製造方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 167
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- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
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- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
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- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
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- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 1
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- 230000001413 cellular effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/42—Gallium arsenide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
Description
図1は、本実施の形態におけるIII−V族化合物半導体基板を概略的に示す断面図である。図1を参照して、本実施の形態におけるIII−V族化合物半導体基板を説明する。
図4は、本実施の形態におけるエピタキシャルウエハを概略的に示す断面図である。図4を参照して、本実施の形態におけるエピタキシャルウエハ20について説明する。
本発明例1〜8は、基本的には実施の形態1にしたがってIII−V族化合物半導体基板を製造した後、実施の形態2にしたがってエピタキシャルウエハを製造した。
比較例1のIII−V族化合物半導体基板およびエピタキシャルウエハは、基本的には本発明例1〜8と同様に製造したが、洗浄工程(S12)および形成工程(S13)を実施しなかった点において異なっていた。
比較例2および3のIII−V族化合物半導体基板およびエピタキシャルウエハは、基本的には本発明例1〜8と同様に製造したが、洗浄工程(S12)を実施しなかった点において異なっていた。
本発明例1〜8および比較例1〜5のIII−V族化合物半導体基板について、酸化膜の厚み、および再現性を以下の方法で測定した。
表1に示すように、基板を酸性溶液で洗浄する洗浄工程(S12)と、湿式法により基板上に酸化膜を形成する形成工程(S13)とが実施された本発明例1〜8のIII−V族化合物半導体基板では、酸化膜の再現性(σ/x)が5.8%以下と向上し、かつエピタキシャルウエハの表面荒れが抑制されており、かつIII−V族化合物半導体基板とエピタキシャルウエハの界面の抵抗が4.7×104(Ω/□)以上と高かった。このことから、酸化膜の厚みを精度よく制御でき、かつエピタキシャル層を形成したときに表面荒れを抑制することができ、かつSiがn型ドーパントとして働くことを抑制できることがわかった。
具体的には、上述した本発明例2および比較例1のIII−V族化合物半導体基板と同様の条件で、10枚のIII−V族化合物半導体基板をそれぞれ製造した。
それぞれのエピタキシャルウエハについて、実施例1と同様に抵抗(シート抵抗)を測定した。その結果を図7に示す。なお、図7は、本実施例においてサーマルクリーニングの温度と、III−V族化合物半導体基板とエピタキシャルウエハとの界面の抵抗との関係を示す図である。図7中、縦軸は抵抗(単位:Ω/□)を示し、横軸はサーマルクリーニングの温度(単位:℃)を示す。
図7に示すように、酸化膜を形成した本発明例2と同様のIII−V族化合物半導体基板およびエピタキシャルウエハは、サーマルクリーニングの温度に依存せずに、高い抵抗を有していた。一方、酸化膜を形成しなかった比較例1のIII−V族化合物半導体基板およびエピタキシャルウエハは、サーマルクリーニングの温度を上昇することで、抵抗が高くなった。
Claims (5)
- III−V族化合物半導体からなる基板を準備する工程と、
前記基板を酸性溶液で洗浄する工程と、
前記洗浄する工程後に、酸素を含む溶液を用いて酸化膜を形成する湿式法により前記基板上に酸化膜を形成する工程と、
前記形成する工程後に実施される純水リンス工程とを備え、
前記酸化膜を形成する工程では、15Å以上30Å以下の厚みを有する前記酸化膜を形成する、III−V族化合物半導体基板の製造方法。 - 前記洗浄する工程では、pHが6未満の前記酸性溶液を用いる、請求項1に記載のIII−V族化合物半導体基板の製造方法。
- 前記酸化膜を形成する工程では、過酸化水素水を用いて前記酸化膜を形成する、請求項1または2に記載のIII−V族化合物半導体基板の製造方法。
- 前記準備する工程では、GaAs、InPまたはGaNよりなる前記基板を準備する、請求項1〜3のいずれかに記載のIII−V族化合物半導体基板の製造方法。
- 請求項1〜4のいずれかに記載のIII−V族化合物半導体基板の製造方法によりIII−V族化合物半導体基板を製造する工程と、
前記III−V族化合物半導体基板上にエピタキシャル層を形成する工程とを備えた、エピタキシャルウエハの製造方法。
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JP2008187303A JP4697272B2 (ja) | 2008-07-18 | 2008-07-18 | Iii−v族化合物半導体基板の製造方法およびエピタキシャルウエハの製造方法 |
TW098123124A TWI502635B (zh) | 2008-07-18 | 2009-07-08 | Iii-v族化合物半導體基板之製造方法、磊晶晶圓之製造方法、iii-v族化合物半導體基板及磊晶晶圓 |
US12/499,158 US20100013053A1 (en) | 2008-07-18 | 2009-07-08 | Method for manufacturing iii-v compound semiconductor substrate, method for manufacturing epitaxial wafer, iii-v compound semiconductor substrate, and epitaxial wafer |
DE102009033648.6A DE102009033648B4 (de) | 2008-07-18 | 2009-07-17 | Verfahren zum Herstellen eines III-V-Verbindungshalbleiter-Substrats, Verfahren zum Herstellen eines Epitaxial-Wafers, III-V-Verbindungshalbleiter-Substrat und Epitaxial-Wafer |
CN200910164545A CN101630641A (zh) | 2008-07-18 | 2009-07-20 | Ⅲ-ⅴ族化合物半导体衬底、外延晶片及它们的制造方法 |
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US (1) | US20100013053A1 (ja) |
JP (1) | JP4697272B2 (ja) |
CN (1) | CN101630641A (ja) |
DE (1) | DE102009033648B4 (ja) |
TW (1) | TWI502635B (ja) |
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JP5817139B2 (ja) * | 2011-02-18 | 2015-11-18 | 富士通株式会社 | 化合物半導体装置の製造方法及び洗浄剤 |
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JP2010027853A (ja) | 2010-02-04 |
DE102009033648A1 (de) | 2010-01-21 |
TWI502635B (zh) | 2015-10-01 |
CN101630641A (zh) | 2010-01-20 |
DE102009033648B4 (de) | 2024-04-18 |
US20100013053A1 (en) | 2010-01-21 |
TW201005816A (en) | 2010-02-01 |
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