DE19813706A1 - Integrierte Halbleiter-Schaltungsvorrichtung - Google Patents

Integrierte Halbleiter-Schaltungsvorrichtung

Info

Publication number
DE19813706A1
DE19813706A1 DE19813706A DE19813706A DE19813706A1 DE 19813706 A1 DE19813706 A1 DE 19813706A1 DE 19813706 A DE19813706 A DE 19813706A DE 19813706 A DE19813706 A DE 19813706A DE 19813706 A1 DE19813706 A1 DE 19813706A1
Authority
DE
Germany
Prior art keywords
voltage
circuit
reference voltage
sel3
sel1
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19813706A
Other languages
German (de)
English (en)
Inventor
Kyoji Yamasaki
Takashi Itou
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE19813706A1 publication Critical patent/DE19813706A1/de
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5004—Voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
DE19813706A 1997-08-12 1998-03-27 Integrierte Halbleiter-Schaltungsvorrichtung Ceased DE19813706A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9217491A JPH1166890A (ja) 1997-08-12 1997-08-12 半導体集積回路装置

Publications (1)

Publication Number Publication Date
DE19813706A1 true DE19813706A1 (de) 1999-02-18

Family

ID=16705080

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813706A Ceased DE19813706A1 (de) 1997-08-12 1998-03-27 Integrierte Halbleiter-Schaltungsvorrichtung

Country Status (6)

Country Link
US (2) US6339357B1 (enExample)
JP (1) JPH1166890A (enExample)
KR (1) KR100292702B1 (enExample)
CN (1) CN1111868C (enExample)
DE (1) DE19813706A1 (enExample)
TW (1) TW374928B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1220230A3 (en) * 2000-12-29 2004-06-16 STMicroelectronics, Inc. Circuit and method for testing a ferroelectric memory device
EP1333446A3 (en) * 2002-01-31 2004-08-18 STMicroelectronics, Inc. Circuit and method for testing a ferroelectric memory device
DE102004015269A1 (de) * 2004-03-29 2005-11-03 Infineon Technologies Ag Integrierte Schaltung

Families Citing this family (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1166890A (ja) * 1997-08-12 1999-03-09 Mitsubishi Electric Corp 半導体集積回路装置
JP3478996B2 (ja) * 1999-06-01 2003-12-15 Ｎｅｃエレクトロニクス株式会社 低振幅ドライバ回路及びこれを含む半導体装置
US6826155B1 (en) * 1999-07-28 2004-11-30 Legerity, Inc. Apparatus and method for facilitating standardized testing of signal lines
JP3829054B2 (ja) * 1999-12-10 2006-10-04 株式会社東芝 半導体集積回路
DE10063102A1 (de) * 1999-12-17 2001-08-23 Infineon Technologies Ag Anordnung und Messung interner Spannungen in einer integrierten Halbleitervorrichtung
US6674774B1 (en) * 2000-05-10 2004-01-06 Infineon Technologies North America Corp. Chopped laser driver for low noise applications
JP3636968B2 (ja) 2000-06-05 2005-04-06 エルピーダメモリ株式会社 半導体装置及びそのテスト方法
CN1232986C (zh) * 2000-07-25 2005-12-21 恩益禧电子股份有限公司 内部电压电平控制电路和半导体存储装置以及其控制方法
JP2002074996A (ja) * 2000-08-25 2002-03-15 Mitsubishi Electric Corp 半導体集積回路
JP4256060B2 (ja) * 2000-10-04 2009-04-22 セイコーインスツル株式会社 絶縁膜の評価方法および装置
US6597619B2 (en) * 2001-01-12 2003-07-22 Micron Technology, Inc. Actively driven VREF for input buffer noise immunity
KR100394575B1 (ko) * 2001-04-11 2003-08-14 삼성전자주식회사 반도체 메모리의 테스트용 핀을 통한 내부정보 선택적출력방법 및 그에 따른 출력회로
JP2002314399A (ja) 2001-04-18 2002-10-25 Mitsubishi Electric Corp 半導体集積回路
JP4803930B2 (ja) * 2001-09-26 2011-10-26 ルネサスエレクトロニクス株式会社 半導体集積回路およびマルチチップパッケージ
JP4278325B2 (ja) * 2001-12-19 2009-06-10 株式会社ルネサステクノロジ 半導体集積回路装置
KR100452319B1 (ko) * 2002-05-10 2004-10-12 삼성전자주식회사 반도체 메모리 장치의 내부전원전압 발생회로 및내부전원전압 제어방법
US7269745B2 (en) * 2002-06-06 2007-09-11 Sony Computer Entertainment Inc. Methods and apparatus for composing an identification number
US6845048B2 (en) * 2002-09-25 2005-01-18 Infineon Technologies Ag System and method for monitoring internal voltages on an integrated circuit
US20040062123A1 (en) * 2002-09-27 2004-04-01 Oki Electric Industry Co., Ltd. Nonvolatile semiconductor memory device able to detect test mode
JP3738001B2 (ja) * 2002-12-03 2006-01-25 松下電器産業株式会社 半導体集積回路装置
US6788133B2 (en) * 2003-01-06 2004-09-07 Faraday Technology Corp. Reference voltage providing circuit
FR2853475B1 (fr) * 2003-04-01 2005-07-08 Atmel Nantes Sa Circuit integre delivrant des niveaux logiques a une tension independante de la tension d'alimentation, sans regulateur associe pour la partie puissance, et module de communication correspondant
KR100558477B1 (ko) * 2003-04-28 2006-03-07 삼성전자주식회사 반도체 장치의 내부 전압 발생회로
JP2005086108A (ja) * 2003-09-10 2005-03-31 Renesas Technology Corp 半導体集積回路
KR100574489B1 (ko) 2004-04-12 2006-04-27 주식회사 하이닉스반도체 반도체 메모리 장치의 내부전압 발생회로
US7154794B2 (en) * 2004-10-08 2006-12-26 Lexmark International, Inc. Memory regulator system with test mode
JP4587804B2 (ja) * 2004-12-22 2010-11-24 株式会社リコー ボルテージレギュレータ回路
US7248102B2 (en) * 2005-01-20 2007-07-24 Infineon Technologies Ag Internal reference voltage generation for integrated circuit testing
KR100618882B1 (ko) 2005-02-01 2006-09-11 삼성전자주식회사 반도체 테스트 회로
JP4949653B2 (ja) 2005-07-21 2012-06-13 株式会社リコー 半導体装置
KR100753050B1 (ko) * 2005-09-29 2007-08-30 주식회사 하이닉스반도체 테스트장치
CA2541046A1 (en) * 2006-03-27 2007-09-27 Mosaid Technologies Incorporated Power supply testing architecture
JP5013895B2 (ja) * 2006-04-27 2012-08-29 パナソニック株式会社 半導体集積回路装置
EP1858027A1 (en) * 2006-05-19 2007-11-21 STMicroelectronics S.r.l. A sensing circuit for semiconductor memories
KR100761371B1 (ko) * 2006-06-29 2007-09-27 주식회사 하이닉스반도체 액티브 드라이버
US7432754B2 (en) * 2006-07-27 2008-10-07 Freescale Semiconductor, Inc. Voltage control circuit having a power switch
US7443231B2 (en) * 2006-08-09 2008-10-28 Elite Semiconductor Memory Technology Inc. Low power reference voltage circuit
KR100824141B1 (ko) * 2006-09-29 2008-04-21 주식회사 하이닉스반도체 반도체 메모리 소자
KR100818105B1 (ko) * 2006-12-27 2008-03-31 주식회사 하이닉스반도체 내부 전압 발생 회로
JP5168927B2 (ja) * 2007-02-14 2013-03-27 株式会社リコー 半導体装置およびそのトリミング方法
US7707467B2 (en) * 2007-02-23 2010-04-27 Micron Technology, Inc. Input/output compression and pin reduction in an integrated circuit
JP5186925B2 (ja) 2008-01-11 2013-04-24 株式会社リコー 半導体装置及びその製造方法
JP2009210448A (ja) * 2008-03-05 2009-09-17 Toshiba Corp 半導体装置
US8130044B2 (en) * 2008-06-19 2012-03-06 Altera Corporation Phase-locked loop circuitry with multiple voltage-controlled oscillators
US7893756B2 (en) * 2008-11-14 2011-02-22 Agilent Technologies, Inc. Precision current source
WO2010091244A2 (en) 2009-02-05 2010-08-12 Enphase Energy, Inc. Method and apparatus for determining a corrected monitoring voltage
CN102035369B (zh) * 2009-09-30 2014-08-20 意法半导体研发(深圳)有限公司 具有电流保护的负电荷泵
KR101708270B1 (ko) * 2010-12-27 2017-02-20 삼성전자 주식회사 반도체 장치, 반도체 장치의 테스트 방법 및 테스트 장비
TWI514123B (zh) * 2011-01-04 2015-12-21 Richtek Technology Corp 用於電源路徑管理的電路及方法
US9588171B2 (en) 2012-05-16 2017-03-07 Infineon Technologies Ag System and method for testing an integrated circuit
KR101959894B1 (ko) 2012-06-29 2019-03-19 에스케이하이닉스 주식회사 반도체 집적회로 및 그의 내부전압 측정방법
CN102818923B (zh) * 2012-08-29 2017-11-14 上海华虹宏力半导体制造有限公司 芯片内部电源输出电压测量系统及方法
KR101720890B1 (ko) * 2012-11-30 2017-03-28 인텔 코포레이션 메모리에 대한 기준 전압들을 결정하는 장치, 방법 및 시스템
TWI474149B (zh) * 2013-01-25 2015-02-21 Etron Technology Inc 多輸入低壓降穩壓器
KR102171261B1 (ko) * 2013-12-27 2020-10-28 삼성전자 주식회사 다수의 전압 발생부들을 갖는 메모리 장치
JP6731960B2 (ja) * 2018-02-08 2020-07-29 矢崎総業株式会社 電源電力伝送システム
JP7677611B2 (ja) 2021-03-03 2025-05-15 国立大学法人東北大学 抵抗変化型素子を備えた記憶回路
CN115308467B (zh) * 2021-05-07 2025-12-23 脸萌有限公司 集成电路内部电压检测电路、检测方法以及集成电路

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1220230A3 (en) * 2000-12-29 2004-06-16 STMicroelectronics, Inc. Circuit and method for testing a ferroelectric memory device
EP1333446A3 (en) * 2002-01-31 2004-08-18 STMicroelectronics, Inc. Circuit and method for testing a ferroelectric memory device
DE102004015269A1 (de) * 2004-03-29 2005-11-03 Infineon Technologies Ag Integrierte Schaltung
DE102004015269B4 (de) * 2004-03-29 2008-03-27 Infineon Technologies Ag Integrierte Schaltung zur Ermittelung einer Spannung

Also Published As

Publication number Publication date
KR19990023117A (ko) 1999-03-25
JPH1166890A (ja) 1999-03-09
CN1208235A (zh) 1999-02-17
CN1111868C (zh) 2003-06-18
US6339357B1 (en) 2002-01-15
KR100292702B1 (ko) 2001-06-15
US6486731B2 (en) 2002-11-26
TW374928B (en) 1999-11-21
US20020053943A1 (en) 2002-05-09

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