CN1111868C - 能在外部监视内部电压的半导体集成电路装置 - Google Patents

能在外部监视内部电压的半导体集成电路装置 Download PDF

Info

Publication number
CN1111868C
CN1111868C CN98106240A CN98106240A CN1111868C CN 1111868 C CN1111868 C CN 1111868C CN 98106240 A CN98106240 A CN 98106240A CN 98106240 A CN98106240 A CN 98106240A CN 1111868 C CN1111868 C CN 1111868C
Authority
CN
China
Prior art keywords
voltage
mentioned
reference voltage
welding zone
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN98106240A
Other languages
English (en)
Chinese (zh)
Other versions
CN1208235A (zh
Inventor
山崎恭治
伊藤孝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of CN1208235A publication Critical patent/CN1208235A/zh
Application granted granted Critical
Publication of CN1111868C publication Critical patent/CN1111868C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5004—Voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
CN98106240A 1997-08-12 1998-04-09 能在外部监视内部电压的半导体集成电路装置 Expired - Fee Related CN1111868C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9217491A JPH1166890A (ja) 1997-08-12 1997-08-12 半導体集積回路装置
JP217491/1997 1997-08-12
JP217491/97 1997-08-12

Publications (2)

Publication Number Publication Date
CN1208235A CN1208235A (zh) 1999-02-17
CN1111868C true CN1111868C (zh) 2003-06-18

Family

ID=16705080

Family Applications (1)

Application Number Title Priority Date Filing Date
CN98106240A Expired - Fee Related CN1111868C (zh) 1997-08-12 1998-04-09 能在外部监视内部电压的半导体集成电路装置

Country Status (6)

Country Link
US (2) US6339357B1 (enExample)
JP (1) JPH1166890A (enExample)
KR (1) KR100292702B1 (enExample)
CN (1) CN1111868C (enExample)
DE (1) DE19813706A1 (enExample)
TW (1) TW374928B (enExample)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1166890A (ja) * 1997-08-12 1999-03-09 Mitsubishi Electric Corp 半導体集積回路装置
JP3478996B2 (ja) * 1999-06-01 2003-12-15 Ｎｅｃエレクトロニクス株式会社 低振幅ドライバ回路及びこれを含む半導体装置
US6826155B1 (en) * 1999-07-28 2004-11-30 Legerity, Inc. Apparatus and method for facilitating standardized testing of signal lines
JP3829054B2 (ja) * 1999-12-10 2006-10-04 株式会社東芝 半導体集積回路
DE10063102A1 (de) * 1999-12-17 2001-08-23 Infineon Technologies Ag Anordnung und Messung interner Spannungen in einer integrierten Halbleitervorrichtung
US6674774B1 (en) * 2000-05-10 2004-01-06 Infineon Technologies North America Corp. Chopped laser driver for low noise applications
JP3636968B2 (ja) 2000-06-05 2005-04-06 エルピーダメモリ株式会社 半導体装置及びそのテスト方法
CN1232986C (zh) * 2000-07-25 2005-12-21 恩益禧电子股份有限公司 内部电压电平控制电路和半导体存储装置以及其控制方法
JP2002074996A (ja) * 2000-08-25 2002-03-15 Mitsubishi Electric Corp 半導体集積回路
JP4256060B2 (ja) * 2000-10-04 2009-04-22 セイコーインスツル株式会社 絶縁膜の評価方法および装置
US6584007B2 (en) * 2000-12-29 2003-06-24 Stmicroelectronics, Inc. Circuit and method for testing a ferroelectric memory device
US6597619B2 (en) * 2001-01-12 2003-07-22 Micron Technology, Inc. Actively driven VREF for input buffer noise immunity
KR100394575B1 (ko) * 2001-04-11 2003-08-14 삼성전자주식회사 반도체 메모리의 테스트용 핀을 통한 내부정보 선택적출력방법 및 그에 따른 출력회로
JP2002314399A (ja) 2001-04-18 2002-10-25 Mitsubishi Electric Corp 半導体集積回路
JP4803930B2 (ja) * 2001-09-26 2011-10-26 ルネサスエレクトロニクス株式会社 半導体集積回路およびマルチチップパッケージ
JP4278325B2 (ja) * 2001-12-19 2009-06-10 株式会社ルネサステクノロジ 半導体集積回路装置
US6754094B2 (en) * 2002-01-31 2004-06-22 Stmicroelectronics, Inc. Circuit and method for testing a ferroelectric memory device
KR100452319B1 (ko) * 2002-05-10 2004-10-12 삼성전자주식회사 반도체 메모리 장치의 내부전원전압 발생회로 및내부전원전압 제어방법
US7269745B2 (en) * 2002-06-06 2007-09-11 Sony Computer Entertainment Inc. Methods and apparatus for composing an identification number
US6845048B2 (en) * 2002-09-25 2005-01-18 Infineon Technologies Ag System and method for monitoring internal voltages on an integrated circuit
US20040062123A1 (en) * 2002-09-27 2004-04-01 Oki Electric Industry Co., Ltd. Nonvolatile semiconductor memory device able to detect test mode
JP3738001B2 (ja) * 2002-12-03 2006-01-25 松下電器産業株式会社 半導体集積回路装置
US6788133B2 (en) * 2003-01-06 2004-09-07 Faraday Technology Corp. Reference voltage providing circuit
FR2853475B1 (fr) * 2003-04-01 2005-07-08 Atmel Nantes Sa Circuit integre delivrant des niveaux logiques a une tension independante de la tension d'alimentation, sans regulateur associe pour la partie puissance, et module de communication correspondant
KR100558477B1 (ko) * 2003-04-28 2006-03-07 삼성전자주식회사 반도체 장치의 내부 전압 발생회로
JP2005086108A (ja) * 2003-09-10 2005-03-31 Renesas Technology Corp 半導体集積回路
DE102004015269B4 (de) * 2004-03-29 2008-03-27 Infineon Technologies Ag Integrierte Schaltung zur Ermittelung einer Spannung
KR100574489B1 (ko) 2004-04-12 2006-04-27 주식회사 하이닉스반도체 반도체 메모리 장치의 내부전압 발생회로
US7154794B2 (en) * 2004-10-08 2006-12-26 Lexmark International, Inc. Memory regulator system with test mode
JP4587804B2 (ja) * 2004-12-22 2010-11-24 株式会社リコー ボルテージレギュレータ回路
US7248102B2 (en) * 2005-01-20 2007-07-24 Infineon Technologies Ag Internal reference voltage generation for integrated circuit testing
KR100618882B1 (ko) 2005-02-01 2006-09-11 삼성전자주식회사 반도체 테스트 회로
JP4949653B2 (ja) 2005-07-21 2012-06-13 株式会社リコー 半導体装置
KR100753050B1 (ko) * 2005-09-29 2007-08-30 주식회사 하이닉스반도체 테스트장치
CA2541046A1 (en) * 2006-03-27 2007-09-27 Mosaid Technologies Incorporated Power supply testing architecture
JP5013895B2 (ja) * 2006-04-27 2012-08-29 パナソニック株式会社 半導体集積回路装置
EP1858027A1 (en) * 2006-05-19 2007-11-21 STMicroelectronics S.r.l. A sensing circuit for semiconductor memories
KR100761371B1 (ko) * 2006-06-29 2007-09-27 주식회사 하이닉스반도체 액티브 드라이버
US7432754B2 (en) * 2006-07-27 2008-10-07 Freescale Semiconductor, Inc. Voltage control circuit having a power switch
US7443231B2 (en) * 2006-08-09 2008-10-28 Elite Semiconductor Memory Technology Inc. Low power reference voltage circuit
KR100824141B1 (ko) * 2006-09-29 2008-04-21 주식회사 하이닉스반도체 반도체 메모리 소자
KR100818105B1 (ko) * 2006-12-27 2008-03-31 주식회사 하이닉스반도체 내부 전압 발생 회로
JP5168927B2 (ja) * 2007-02-14 2013-03-27 株式会社リコー 半導体装置およびそのトリミング方法
US7707467B2 (en) * 2007-02-23 2010-04-27 Micron Technology, Inc. Input/output compression and pin reduction in an integrated circuit
JP5186925B2 (ja) 2008-01-11 2013-04-24 株式会社リコー 半導体装置及びその製造方法
JP2009210448A (ja) * 2008-03-05 2009-09-17 Toshiba Corp 半導体装置
US8130044B2 (en) * 2008-06-19 2012-03-06 Altera Corporation Phase-locked loop circuitry with multiple voltage-controlled oscillators
US7893756B2 (en) * 2008-11-14 2011-02-22 Agilent Technologies, Inc. Precision current source
WO2010091244A2 (en) 2009-02-05 2010-08-12 Enphase Energy, Inc. Method and apparatus for determining a corrected monitoring voltage
CN102035369B (zh) * 2009-09-30 2014-08-20 意法半导体研发(深圳)有限公司 具有电流保护的负电荷泵
KR101708270B1 (ko) * 2010-12-27 2017-02-20 삼성전자 주식회사 반도체 장치, 반도체 장치의 테스트 방법 및 테스트 장비
TWI514123B (zh) * 2011-01-04 2015-12-21 Richtek Technology Corp 用於電源路徑管理的電路及方法
US9588171B2 (en) 2012-05-16 2017-03-07 Infineon Technologies Ag System and method for testing an integrated circuit
KR101959894B1 (ko) 2012-06-29 2019-03-19 에스케이하이닉스 주식회사 반도체 집적회로 및 그의 내부전압 측정방법
CN102818923B (zh) * 2012-08-29 2017-11-14 上海华虹宏力半导体制造有限公司 芯片内部电源输出电压测量系统及方法
KR101720890B1 (ko) * 2012-11-30 2017-03-28 인텔 코포레이션 메모리에 대한 기준 전압들을 결정하는 장치, 방법 및 시스템
TWI474149B (zh) * 2013-01-25 2015-02-21 Etron Technology Inc 多輸入低壓降穩壓器
KR102171261B1 (ko) * 2013-12-27 2020-10-28 삼성전자 주식회사 다수의 전압 발생부들을 갖는 메모리 장치
JP6731960B2 (ja) * 2018-02-08 2020-07-29 矢崎総業株式会社 電源電力伝送システム
JP7677611B2 (ja) 2021-03-03 2025-05-15 国立大学法人東北大学 抵抗変化型素子を備えた記憶回路
CN115308467B (zh) * 2021-05-07 2025-12-23 脸萌有限公司 集成电路内部电压检测电路、检测方法以及集成电路

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58184822A (ja) * 1982-03-31 1983-10-28 Fujitsu Ltd 入力回路
JPS60164269A (ja) 1984-02-06 1985-08-27 Toshiba Corp 半導体装置
JPH083517B2 (ja) 1989-05-20 1996-01-17 富士通株式会社 半導体集積回路装置
JP2733796B2 (ja) * 1990-02-13 1998-03-30 セイコーインスツルメンツ株式会社 スイッチ回路
JP2888898B2 (ja) * 1990-02-23 1999-05-10 株式会社日立製作所 半導体集積回路
US5283762A (en) * 1990-05-09 1994-02-01 Mitsubishi Denki Kabushiki Kaisha Semiconductor device containing voltage converting circuit and operating method thereof
JP3212622B2 (ja) 1990-12-19 2001-09-25 株式会社日立製作所 半導体集積回路装置
KR930008886B1 (ko) * 1991-08-19 1993-09-16 삼성전자 주식회사 전기적으로 프로그램 할 수 있는 내부전원 발생회로
JP3362873B2 (ja) * 1992-08-21 2003-01-07 株式会社東芝 半導体装置
JPH06215599A (ja) 1993-01-13 1994-08-05 Nec Corp 半導体記憶回路
US5376834A (en) * 1993-03-05 1994-12-27 Sgs-Thomson Microelectronics, Inc. Initialization circuit for automatically establishing an output to zero or desired reference potential
JP2727921B2 (ja) * 1993-08-13 1998-03-18 日本電気株式会社 半導体集積回路装置
IT1272933B (it) * 1994-01-28 1997-07-01 Fujitsu Ltd Dispositivo a circuito integrato di semiconduttore
JP3705842B2 (ja) * 1994-08-04 2005-10-12 株式会社ルネサステクノロジ 半導体装置
US5552745A (en) * 1994-09-21 1996-09-03 International Business Machines Corporation Self-resetting CMOS multiplexer with static output driver
US5744995A (en) * 1996-04-17 1998-04-28 Xilinx, Inc. Six-input multiplexer wtih two gate levels and three memory cells
US5789966A (en) * 1996-09-18 1998-08-04 International Business Machines Corporation Distributed multiplexer
JPH10149699A (ja) * 1996-11-18 1998-06-02 Mitsubishi Electric Corp 半導体回路装置
JPH1166890A (ja) * 1997-08-12 1999-03-09 Mitsubishi Electric Corp 半導体集積回路装置

Also Published As

Publication number Publication date
KR19990023117A (ko) 1999-03-25
JPH1166890A (ja) 1999-03-09
CN1208235A (zh) 1999-02-17
US6339357B1 (en) 2002-01-15
KR100292702B1 (ko) 2001-06-15
US6486731B2 (en) 2002-11-26
TW374928B (en) 1999-11-21
DE19813706A1 (de) 1999-02-18
US20020053943A1 (en) 2002-05-09

Similar Documents

Publication Publication Date Title
CN1111868C (zh) 能在外部监视内部电压的半导体集成电路装置
CN1271696C (zh) 半导体器件及其测试方法
CN1149576C (zh) 半导体集成电路
CN1269137C (zh) 半导体存储器件
CN1145970C (zh) 非易失半导体存储器
CN1696715A (zh) 监测电熔丝电阻的系统
US7995408B2 (en) Circuit for supplying a reference voltage in a semiconductor memory device for testing an internal voltage generator therein
CN1173392C (zh) 进行存储器件的缺陷泄漏筛选试验的装置和方法
CN1041581C (zh) 半导体存储器及其类型的设置方法
JPH06295585A (ja) 内部電源電圧発生回路
JP2000091505A (ja) 半導体集積回路装置
CN1140316A (zh) 同时指定多位检验方式和特定检验方式的半导体存储器件
US10923209B2 (en) Semiconductor memory device
CN1747062A (zh) 半导体存储器件
CN101075613A (zh) 具有焊盘开关的半导体器件
CN1104053C (zh) 半导体集成电路
CN1461011A (zh) 具有两个基准电压产生电路的内部电源电压控制装置
CN1700346A (zh) 用于监视存储设备的内部控制信号的方法及其装置
CN1240076C (zh) 半导体存储器件
CN1818692A (zh) 包括熔丝的半导体器件及能够抑制错误确定的其测试方法
CN1182537C (zh) 可以抑制噪音并供给电源电位的半导体集成电路装置
CN1527323A (zh) 半导体存储器件及载有其和逻辑电路器件的半导体器件
US7315483B2 (en) Circuit for selecting a power supply voltage and semiconductor device having the same
CN1121696C (zh) 能够实现稳定的检验方式操作的半导体存储器
KR100933804B1 (ko) 다중 모드 반도체 메모리에서 모드 선택 장치 및 방법

Legal Events

Date Code Title Description
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C06 Publication
PB01 Publication
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee