KR100292702B1 - 내부전압을외부에서모니터할수있는반도체집적회로장치 - Google Patents

내부전압을외부에서모니터할수있는반도체집적회로장치 Download PDF

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Publication number
KR100292702B1
KR100292702B1 KR1019980013294A KR19980013294A KR100292702B1 KR 100292702 B1 KR100292702 B1 KR 100292702B1 KR 1019980013294 A KR1019980013294 A KR 1019980013294A KR 19980013294 A KR19980013294 A KR 19980013294A KR 100292702 B1 KR100292702 B1 KR 100292702B1
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KR
South Korea
Prior art keywords
voltage
circuit
reference voltage
pad
internal
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1019980013294A
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English (en)
Korean (ko)
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KR19990023117A (ko
Inventor
교지 야마사키
다카시 이토
Original Assignee
다니구찌 이찌로오, 기타오카 다카시
미쓰비시덴키 가부시키가이샤
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Publication of KR19990023117A publication Critical patent/KR19990023117A/ko
Application granted granted Critical
Publication of KR100292702B1 publication Critical patent/KR100292702B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5004—Voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR1019980013294A 1997-08-12 1998-04-14 내부전압을외부에서모니터할수있는반도체집적회로장치 Expired - Fee Related KR100292702B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP97-217491 1997-08-12
JP9217491A JPH1166890A (ja) 1997-08-12 1997-08-12 半導体集積回路装置

Publications (2)

Publication Number Publication Date
KR19990023117A KR19990023117A (ko) 1999-03-25
KR100292702B1 true KR100292702B1 (ko) 2001-06-15

Family

ID=16705080

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980013294A Expired - Fee Related KR100292702B1 (ko) 1997-08-12 1998-04-14 내부전압을외부에서모니터할수있는반도체집적회로장치

Country Status (6)

Country Link
US (2) US6339357B1 (enExample)
JP (1) JPH1166890A (enExample)
KR (1) KR100292702B1 (enExample)
CN (1) CN1111868C (enExample)
DE (1) DE19813706A1 (enExample)
TW (1) TW374928B (enExample)

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Publication number Priority date Publication date Assignee Title
US7221170B2 (en) 2005-02-01 2007-05-22 Samsung Electronics Co., Ltd. Semiconductor test circuit
US9201114B2 (en) 2012-06-29 2015-12-01 SK Hynix Inc. Semiconductor integrated circuit and method for measuring internal voltage thereof

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JPH1166890A (ja) * 1997-08-12 1999-03-09 Mitsubishi Electric Corp 半導体集積回路装置
JP3478996B2 (ja) * 1999-06-01 2003-12-15 Ｎｅｃエレクトロニクス株式会社 低振幅ドライバ回路及びこれを含む半導体装置
US6826155B1 (en) * 1999-07-28 2004-11-30 Legerity, Inc. Apparatus and method for facilitating standardized testing of signal lines
JP3829054B2 (ja) * 1999-12-10 2006-10-04 株式会社東芝 半導体集積回路
DE10063102A1 (de) * 1999-12-17 2001-08-23 Infineon Technologies Ag Anordnung und Messung interner Spannungen in einer integrierten Halbleitervorrichtung
US6674774B1 (en) * 2000-05-10 2004-01-06 Infineon Technologies North America Corp. Chopped laser driver for low noise applications
JP3636968B2 (ja) 2000-06-05 2005-04-06 エルピーダメモリ株式会社 半導体装置及びそのテスト方法
CN1232986C (zh) * 2000-07-25 2005-12-21 恩益禧电子股份有限公司 内部电压电平控制电路和半导体存储装置以及其控制方法
JP2002074996A (ja) * 2000-08-25 2002-03-15 Mitsubishi Electric Corp 半導体集積回路
JP4256060B2 (ja) * 2000-10-04 2009-04-22 セイコーインスツル株式会社 絶縁膜の評価方法および装置
US6584007B2 (en) * 2000-12-29 2003-06-24 Stmicroelectronics, Inc. Circuit and method for testing a ferroelectric memory device
US6597619B2 (en) * 2001-01-12 2003-07-22 Micron Technology, Inc. Actively driven VREF for input buffer noise immunity
KR100394575B1 (ko) * 2001-04-11 2003-08-14 삼성전자주식회사 반도체 메모리의 테스트용 핀을 통한 내부정보 선택적출력방법 및 그에 따른 출력회로
JP2002314399A (ja) 2001-04-18 2002-10-25 Mitsubishi Electric Corp 半導体集積回路
JP4803930B2 (ja) * 2001-09-26 2011-10-26 ルネサスエレクトロニクス株式会社 半導体集積回路およびマルチチップパッケージ
JP4278325B2 (ja) * 2001-12-19 2009-06-10 株式会社ルネサステクノロジ 半導体集積回路装置
US6754094B2 (en) * 2002-01-31 2004-06-22 Stmicroelectronics, Inc. Circuit and method for testing a ferroelectric memory device
KR100452319B1 (ko) * 2002-05-10 2004-10-12 삼성전자주식회사 반도체 메모리 장치의 내부전원전압 발생회로 및내부전원전압 제어방법
US7269745B2 (en) * 2002-06-06 2007-09-11 Sony Computer Entertainment Inc. Methods and apparatus for composing an identification number
US6845048B2 (en) * 2002-09-25 2005-01-18 Infineon Technologies Ag System and method for monitoring internal voltages on an integrated circuit
US20040062123A1 (en) * 2002-09-27 2004-04-01 Oki Electric Industry Co., Ltd. Nonvolatile semiconductor memory device able to detect test mode
JP3738001B2 (ja) * 2002-12-03 2006-01-25 松下電器産業株式会社 半導体集積回路装置
US6788133B2 (en) * 2003-01-06 2004-09-07 Faraday Technology Corp. Reference voltage providing circuit
FR2853475B1 (fr) * 2003-04-01 2005-07-08 Atmel Nantes Sa Circuit integre delivrant des niveaux logiques a une tension independante de la tension d'alimentation, sans regulateur associe pour la partie puissance, et module de communication correspondant
KR100558477B1 (ko) * 2003-04-28 2006-03-07 삼성전자주식회사 반도체 장치의 내부 전압 발생회로
JP2005086108A (ja) * 2003-09-10 2005-03-31 Renesas Technology Corp 半導体集積回路
DE102004015269B4 (de) * 2004-03-29 2008-03-27 Infineon Technologies Ag Integrierte Schaltung zur Ermittelung einer Spannung
KR100574489B1 (ko) 2004-04-12 2006-04-27 주식회사 하이닉스반도체 반도체 메모리 장치의 내부전압 발생회로
US7154794B2 (en) * 2004-10-08 2006-12-26 Lexmark International, Inc. Memory regulator system with test mode
JP4587804B2 (ja) * 2004-12-22 2010-11-24 株式会社リコー ボルテージレギュレータ回路
US7248102B2 (en) * 2005-01-20 2007-07-24 Infineon Technologies Ag Internal reference voltage generation for integrated circuit testing
JP4949653B2 (ja) 2005-07-21 2012-06-13 株式会社リコー 半導体装置
KR100753050B1 (ko) * 2005-09-29 2007-08-30 주식회사 하이닉스반도체 테스트장치
CA2541046A1 (en) * 2006-03-27 2007-09-27 Mosaid Technologies Incorporated Power supply testing architecture
JP5013895B2 (ja) * 2006-04-27 2012-08-29 パナソニック株式会社 半導体集積回路装置
EP1858027A1 (en) * 2006-05-19 2007-11-21 STMicroelectronics S.r.l. A sensing circuit for semiconductor memories
KR100761371B1 (ko) * 2006-06-29 2007-09-27 주식회사 하이닉스반도체 액티브 드라이버
US7432754B2 (en) * 2006-07-27 2008-10-07 Freescale Semiconductor, Inc. Voltage control circuit having a power switch
US7443231B2 (en) * 2006-08-09 2008-10-28 Elite Semiconductor Memory Technology Inc. Low power reference voltage circuit
KR100824141B1 (ko) * 2006-09-29 2008-04-21 주식회사 하이닉스반도체 반도체 메모리 소자
KR100818105B1 (ko) * 2006-12-27 2008-03-31 주식회사 하이닉스반도체 내부 전압 발생 회로
JP5168927B2 (ja) * 2007-02-14 2013-03-27 株式会社リコー 半導体装置およびそのトリミング方法
US7707467B2 (en) * 2007-02-23 2010-04-27 Micron Technology, Inc. Input/output compression and pin reduction in an integrated circuit
JP5186925B2 (ja) 2008-01-11 2013-04-24 株式会社リコー 半導体装置及びその製造方法
JP2009210448A (ja) * 2008-03-05 2009-09-17 Toshiba Corp 半導体装置
US8130044B2 (en) * 2008-06-19 2012-03-06 Altera Corporation Phase-locked loop circuitry with multiple voltage-controlled oscillators
US7893756B2 (en) * 2008-11-14 2011-02-22 Agilent Technologies, Inc. Precision current source
WO2010091244A2 (en) 2009-02-05 2010-08-12 Enphase Energy, Inc. Method and apparatus for determining a corrected monitoring voltage
CN102035369B (zh) * 2009-09-30 2014-08-20 意法半导体研发(深圳)有限公司 具有电流保护的负电荷泵
KR101708270B1 (ko) * 2010-12-27 2017-02-20 삼성전자 주식회사 반도체 장치, 반도체 장치의 테스트 방법 및 테스트 장비
TWI514123B (zh) * 2011-01-04 2015-12-21 Richtek Technology Corp 用於電源路徑管理的電路及方法
US9588171B2 (en) 2012-05-16 2017-03-07 Infineon Technologies Ag System and method for testing an integrated circuit
CN102818923B (zh) * 2012-08-29 2017-11-14 上海华虹宏力半导体制造有限公司 芯片内部电源输出电压测量系统及方法
KR101720890B1 (ko) * 2012-11-30 2017-03-28 인텔 코포레이션 메모리에 대한 기준 전압들을 결정하는 장치, 방법 및 시스템
TWI474149B (zh) * 2013-01-25 2015-02-21 Etron Technology Inc 多輸入低壓降穩壓器
KR102171261B1 (ko) * 2013-12-27 2020-10-28 삼성전자 주식회사 다수의 전압 발생부들을 갖는 메모리 장치
JP6731960B2 (ja) * 2018-02-08 2020-07-29 矢崎総業株式会社 電源電力伝送システム
JP7677611B2 (ja) 2021-03-03 2025-05-15 国立大学法人東北大学 抵抗変化型素子を備えた記憶回路
CN115308467B (zh) * 2021-05-07 2025-12-23 脸萌有限公司 集成电路内部电压检测电路、检测方法以及集成电路

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7221170B2 (en) 2005-02-01 2007-05-22 Samsung Electronics Co., Ltd. Semiconductor test circuit
US9201114B2 (en) 2012-06-29 2015-12-01 SK Hynix Inc. Semiconductor integrated circuit and method for measuring internal voltage thereof

Also Published As

Publication number Publication date
KR19990023117A (ko) 1999-03-25
JPH1166890A (ja) 1999-03-09
CN1208235A (zh) 1999-02-17
CN1111868C (zh) 2003-06-18
US6339357B1 (en) 2002-01-15
US6486731B2 (en) 2002-11-26
TW374928B (en) 1999-11-21
DE19813706A1 (de) 1999-02-18
US20020053943A1 (en) 2002-05-09

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Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20060327

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000