TW374928B - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
TW374928B
TW374928B TW087102777A TW87102777A TW374928B TW 374928 B TW374928 B TW 374928B TW 087102777 A TW087102777 A TW 087102777A TW 87102777 A TW87102777 A TW 87102777A TW 374928 B TW374928 B TW 374928B
Authority
TW
Taiwan
Prior art keywords
voltage
semiconductor integrated
integrated circuit
circuit device
basic
Prior art date
Application number
TW087102777A
Other languages
English (en)
Chinese (zh)
Inventor
Kyoji Yamasaki
Takasi Itou
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of TW374928B publication Critical patent/TW374928B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/50—Marginal testing, e.g. race, voltage or current testing
    • G11C2029/5004—Voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
TW087102777A 1997-08-12 1998-02-25 Semiconductor integrated circuit device TW374928B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9217491A JPH1166890A (ja) 1997-08-12 1997-08-12 半導体集積回路装置

Publications (1)

Publication Number Publication Date
TW374928B true TW374928B (en) 1999-11-21

Family

ID=16705080

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087102777A TW374928B (en) 1997-08-12 1998-02-25 Semiconductor integrated circuit device

Country Status (6)

Country Link
US (2) US6339357B1 (enExample)
JP (1) JPH1166890A (enExample)
KR (1) KR100292702B1 (enExample)
CN (1) CN1111868C (enExample)
DE (1) DE19813706A1 (enExample)
TW (1) TW374928B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6646486B2 (en) 2001-04-18 2003-11-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit

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JP4256060B2 (ja) * 2000-10-04 2009-04-22 セイコーインスツル株式会社 絶縁膜の評価方法および装置
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KR100818105B1 (ko) * 2006-12-27 2008-03-31 주식회사 하이닉스반도체 내부 전압 발생 회로
JP5168927B2 (ja) * 2007-02-14 2013-03-27 株式会社リコー 半導体装置およびそのトリミング方法
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KR101708270B1 (ko) * 2010-12-27 2017-02-20 삼성전자 주식회사 반도체 장치, 반도체 장치의 테스트 방법 및 테스트 장비
TWI514123B (zh) * 2011-01-04 2015-12-21 Richtek Technology Corp 用於電源路徑管理的電路及方法
US9588171B2 (en) 2012-05-16 2017-03-07 Infineon Technologies Ag System and method for testing an integrated circuit
KR101959894B1 (ko) 2012-06-29 2019-03-19 에스케이하이닉스 주식회사 반도체 집적회로 및 그의 내부전압 측정방법
CN102818923B (zh) * 2012-08-29 2017-11-14 上海华虹宏力半导体制造有限公司 芯片内部电源输出电压测量系统及方法
KR101720890B1 (ko) * 2012-11-30 2017-03-28 인텔 코포레이션 메모리에 대한 기준 전압들을 결정하는 장치, 방법 및 시스템
TWI474149B (zh) * 2013-01-25 2015-02-21 Etron Technology Inc 多輸入低壓降穩壓器
KR102171261B1 (ko) * 2013-12-27 2020-10-28 삼성전자 주식회사 다수의 전압 발생부들을 갖는 메모리 장치
JP6731960B2 (ja) * 2018-02-08 2020-07-29 矢崎総業株式会社 電源電力伝送システム
JP7677611B2 (ja) 2021-03-03 2025-05-15 国立大学法人東北大学 抵抗変化型素子を備えた記憶回路
CN115308467B (zh) * 2021-05-07 2025-12-23 脸萌有限公司 集成电路内部电压检测电路、检测方法以及集成电路

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6646486B2 (en) 2001-04-18 2003-11-11 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit

Also Published As

Publication number Publication date
KR19990023117A (ko) 1999-03-25
JPH1166890A (ja) 1999-03-09
CN1208235A (zh) 1999-02-17
CN1111868C (zh) 2003-06-18
US6339357B1 (en) 2002-01-15
KR100292702B1 (ko) 2001-06-15
US6486731B2 (en) 2002-11-26
DE19813706A1 (de) 1999-02-18
US20020053943A1 (en) 2002-05-09

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