DE102007008568B8 - Halbleitervorrichtung mit IGBT und Diode - Google Patents

Halbleitervorrichtung mit IGBT und Diode Download PDF

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Publication number
DE102007008568B8
DE102007008568B8 DE102007008568A DE102007008568A DE102007008568B8 DE 102007008568 B8 DE102007008568 B8 DE 102007008568B8 DE 102007008568 A DE102007008568 A DE 102007008568A DE 102007008568 A DE102007008568 A DE 102007008568A DE 102007008568 B8 DE102007008568 B8 DE 102007008568B8
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DE
Germany
Prior art keywords
igbt
diode
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE102007008568A
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English (en)
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DE102007008568B4 (de
DE102007008568A1 (de
Inventor
Yoshihiko Ozeki
Norihito Tokura
Yukio Tsuzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
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Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of DE102007008568A1 publication Critical patent/DE102007008568A1/de
Publication of DE102007008568B4 publication Critical patent/DE102007008568B4/de
Application granted granted Critical
Publication of DE102007008568B8 publication Critical patent/DE102007008568B8/de
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
DE102007008568A 2006-02-24 2007-02-21 Halbleitervorrichtung mit IGBT und Diode Expired - Fee Related DE102007008568B8 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006049300A JP5011748B2 (ja) 2006-02-24 2006-02-24 半導体装置
JP2006-049300 2006-02-24

Publications (3)

Publication Number Publication Date
DE102007008568A1 DE102007008568A1 (de) 2007-09-06
DE102007008568B4 DE102007008568B4 (de) 2012-11-08
DE102007008568B8 true DE102007008568B8 (de) 2013-01-17

Family

ID=38329473

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102007008568A Expired - Fee Related DE102007008568B8 (de) 2006-02-24 2007-02-21 Halbleitervorrichtung mit IGBT und Diode

Country Status (4)

Country Link
US (1) US8102025B2 (de)
JP (1) JP5011748B2 (de)
CN (1) CN100559589C (de)
DE (1) DE102007008568B8 (de)

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JP5157247B2 (ja) * 2006-10-30 2013-03-06 三菱電機株式会社 電力半導体装置
JP4483918B2 (ja) * 2007-09-18 2010-06-16 株式会社デンソー 半導体装置
JP5167741B2 (ja) * 2007-09-21 2013-03-21 株式会社デンソー 半導体装置
JP5186868B2 (ja) * 2007-10-03 2013-04-24 株式会社デンソー 半導体装置及びその製造方法
JP5332175B2 (ja) * 2007-10-24 2013-11-06 富士電機株式会社 制御回路を備える半導体装置
JP5267036B2 (ja) * 2007-12-05 2013-08-21 株式会社デンソー 半導体装置の製造方法
JP4544313B2 (ja) * 2008-02-19 2010-09-15 トヨタ自動車株式会社 Ｉｇｂｔとその製造方法
JP5206541B2 (ja) 2008-04-01 2013-06-12 株式会社デンソー 半導体装置およびその製造方法
JP4743447B2 (ja) 2008-05-23 2011-08-10 三菱電機株式会社 半導体装置
JP2010098189A (ja) * 2008-10-17 2010-04-30 Toshiba Corp 半導体装置
JP4947111B2 (ja) * 2008-12-10 2012-06-06 株式会社デンソー 半導体装置の製造方法
US8507352B2 (en) * 2008-12-10 2013-08-13 Denso Corporation Method of manufacturing semiconductor device including insulated gate bipolar transistor and diode
JP5045733B2 (ja) * 2008-12-24 2012-10-10 株式会社デンソー 半導体装置
JP5637175B2 (ja) * 2008-12-24 2014-12-10 株式会社デンソー 半導体装置
JP5366297B2 (ja) * 2009-02-10 2013-12-11 富士電機株式会社 半導体装置
JP4877337B2 (ja) * 2009-02-17 2012-02-15 トヨタ自動車株式会社 半導体装置
JP5577628B2 (ja) * 2009-06-05 2014-08-27 トヨタ自動車株式会社 半導体装置
KR101221206B1 (ko) 2009-06-11 2013-01-21 도요타 지도샤（주） 반도체 장치
JP5333342B2 (ja) * 2009-06-29 2013-11-06 株式会社デンソー 半導体装置
JP2011023527A (ja) * 2009-07-15 2011-02-03 Toshiba Corp 半導体装置
US8288795B2 (en) 2010-03-02 2012-10-16 Micron Technology, Inc. Thyristor based memory cells, devices and systems including the same and methods for forming the same
US9646869B2 (en) * 2010-03-02 2017-05-09 Micron Technology, Inc. Semiconductor devices including a diode structure over a conductive strap and methods of forming such semiconductor devices
US8507966B2 (en) 2010-03-02 2013-08-13 Micron Technology, Inc. Semiconductor cells, arrays, devices and systems having a buried conductive line and methods for forming the same
US8513722B2 (en) 2010-03-02 2013-08-20 Micron Technology, Inc. Floating body cell structures, devices including same, and methods for forming same
US9608119B2 (en) 2010-03-02 2017-03-28 Micron Technology, Inc. Semiconductor-metal-on-insulator structures, methods of forming such structures, and semiconductor devices including such structures
JP5678469B2 (ja) * 2010-05-07 2015-03-04 株式会社デンソー 半導体装置
JP2011238771A (ja) * 2010-05-11 2011-11-24 Hitachi Ltd 半導体装置
JP6301776B2 (ja) * 2010-05-26 2018-03-28 三菱電機株式会社 半導体装置
JP5582102B2 (ja) 2010-07-01 2014-09-03 株式会社デンソー 半導体装置
JP5606240B2 (ja) * 2010-09-22 2014-10-15 三菱電機株式会社 半導体装置
CN102668094B (zh) * 2010-10-29 2015-02-25 松下电器产业株式会社 半导体元件以及半导体装置
JP5321669B2 (ja) 2010-11-25 2013-10-23 株式会社デンソー 半導体装置
US8502346B2 (en) * 2010-12-23 2013-08-06 Alpha And Omega Semiconductor Incorporated Monolithic IGBT and diode structure for quasi-resonant converters
US8598621B2 (en) 2011-02-11 2013-12-03 Micron Technology, Inc. Memory cells, memory arrays, methods of forming memory cells, and methods of forming a shared doped semiconductor region of a vertically oriented thyristor and a vertically oriented access transistor
US8952418B2 (en) 2011-03-01 2015-02-10 Micron Technology, Inc. Gated bipolar junction transistors
US8519431B2 (en) 2011-03-08 2013-08-27 Micron Technology, Inc. Thyristors
JP5937413B2 (ja) 2011-06-15 2016-06-22 株式会社デンソー 半導体装置
US8772848B2 (en) 2011-07-26 2014-07-08 Micron Technology, Inc. Circuit structures, memory circuitry, and methods
JP5751125B2 (ja) * 2011-10-20 2015-07-22 株式会社デンソー 半導体装置
JP5618963B2 (ja) * 2011-10-26 2014-11-05 三菱電機株式会社 半導体装置
JP5742711B2 (ja) * 2011-12-28 2015-07-01 株式会社デンソー 半導体装置
JP6022774B2 (ja) * 2012-01-24 2016-11-09 トヨタ自動車株式会社 半導体装置
JP2014103376A (ja) * 2012-09-24 2014-06-05 Toshiba Corp 半導体装置
CN102931223B (zh) * 2012-11-28 2015-11-04 江苏物联网研究发展中心 Igbt集电极结构
CN104253151B (zh) * 2013-06-27 2017-06-27 无锡华润上华半导体有限公司 场截止型反向导通绝缘栅双极型晶体管及其制造方法
CN104253152A (zh) * 2013-06-28 2014-12-31 无锡华润上华半导体有限公司 一种igbt及其制造方法
CN103489908A (zh) * 2013-09-16 2014-01-01 电子科技大学 一种能消除负阻效应的rc-igbt
CN104465732B (zh) * 2013-09-22 2018-07-06 南京励盛半导体科技有限公司 一种半导体功率器件的结构
JP6107767B2 (ja) * 2013-12-27 2017-04-05 トヨタ自動車株式会社 半導体装置とその製造方法
US9941269B2 (en) * 2014-01-29 2018-04-10 Mitsubishi Electric Corporation Power semiconductor device including well extension region and field-limiting rings
US9419148B2 (en) * 2014-03-28 2016-08-16 Stmicroelectronics S.R.L. Diode with insulated anode regions
JP2016029685A (ja) * 2014-07-25 2016-03-03 株式会社東芝 半導体装置
US9673054B2 (en) 2014-08-18 2017-06-06 Micron Technology, Inc. Array of gated devices and methods of forming an array of gated devices
US9224738B1 (en) 2014-08-18 2015-12-29 Micron Technology, Inc. Methods of forming an array of gated devices
US9209187B1 (en) 2014-08-18 2015-12-08 Micron Technology, Inc. Methods of forming an array of gated devices
JP6261494B2 (ja) 2014-12-03 2018-01-17 三菱電機株式会社 電力用半導体装置
WO2016098199A1 (ja) * 2014-12-17 2016-06-23 三菱電機株式会社 半導体装置
JP6854654B2 (ja) * 2017-01-26 2021-04-07 ローム株式会社 半導体装置
JP6652515B2 (ja) * 2017-02-09 2020-02-26 株式会社東芝 半導体装置
CN108447903B (zh) * 2017-02-16 2023-07-04 富士电机株式会社 半导体装置
JP6804379B2 (ja) * 2017-04-24 2020-12-23 三菱電機株式会社 半導体装置
US10396189B2 (en) * 2017-05-30 2019-08-27 Fuji Electric Co., Ltd. Semiconductor device
TWI695418B (zh) * 2017-09-22 2020-06-01 新唐科技股份有限公司 半導體元件及其製造方法
JP7102808B2 (ja) * 2018-03-15 2022-07-20 富士電機株式会社 半導体装置
JP7000971B2 (ja) * 2018-04-17 2022-01-19 三菱電機株式会社 半導体装置
JP6987015B2 (ja) * 2018-04-26 2021-12-22 三菱電機株式会社 半導体装置
JP2021128993A (ja) * 2020-02-13 2021-09-02 サンケン電気株式会社 半導体装置およびスイッチングシステム

Citations (7)

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Publication number Priority date Publication date Assignee Title
US5360984A (en) * 1991-11-29 1994-11-01 Fuji Electric Co., Ltd. IGBT with freewheeling diode
US5859446A (en) * 1996-02-28 1999-01-12 Hitachi, Ltd. Diode and power converting apparatus
JP2000114550A (ja) * 1998-10-06 2000-04-21 Hitachi Ltd ダイオード及び電力変換装置
JP2000340806A (ja) * 1999-05-27 2000-12-08 Toshiba Corp 半導体装置
US6177713B1 (en) * 1998-07-29 2001-01-23 Mitsubishi Denki Kabushiki Kaisha Free wheel diode for preventing destruction of a field limiting innermost circumferential layer
JP2002270857A (ja) * 2001-03-07 2002-09-20 Toshiba Corp 半導体装置および電力変換装置
DE10160118A1 (de) * 2001-04-18 2002-10-31 Mitsubishi Electric Corp Halbleiterelement

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US5360984A (en) * 1991-11-29 1994-11-01 Fuji Electric Co., Ltd. IGBT with freewheeling diode
US5859446A (en) * 1996-02-28 1999-01-12 Hitachi, Ltd. Diode and power converting apparatus
US6177713B1 (en) * 1998-07-29 2001-01-23 Mitsubishi Denki Kabushiki Kaisha Free wheel diode for preventing destruction of a field limiting innermost circumferential layer
JP2000114550A (ja) * 1998-10-06 2000-04-21 Hitachi Ltd ダイオード及び電力変換装置
JP2000340806A (ja) * 1999-05-27 2000-12-08 Toshiba Corp 半導体装置
JP2002270857A (ja) * 2001-03-07 2002-09-20 Toshiba Corp 半導体装置および電力変換装置
DE10160118A1 (de) * 2001-04-18 2002-10-31 Mitsubishi Electric Corp Halbleiterelement

Also Published As

Publication number Publication date
DE102007008568B4 (de) 2012-11-08
JP5011748B2 (ja) 2012-08-29
DE102007008568A1 (de) 2007-09-06
US20070200138A1 (en) 2007-08-30
CN101026161A (zh) 2007-08-29
JP2007227806A (ja) 2007-09-06
US8102025B2 (en) 2012-01-24
CN100559589C (zh) 2009-11-11

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