BRPI1012070A2 - "dispositivo semicondutor" - Google Patents
"dispositivo semicondutor"Info
- Publication number
- BRPI1012070A2 BRPI1012070A2 BRPI1012070A BRPI1012070A BRPI1012070A2 BR PI1012070 A2 BRPI1012070 A2 BR PI1012070A2 BR PI1012070 A BRPI1012070 A BR PI1012070A BR PI1012070 A BRPI1012070 A BR PI1012070A BR PI1012070 A2 BRPI1012070 A2 BR PI1012070A2
- Authority
- BR
- Brazil
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009145795 | 2009-06-18 | ||
PCT/JP2010/059736 WO2010147032A1 (ja) | 2009-06-18 | 2010-06-09 | 半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
BRPI1012070A2 true BRPI1012070A2 (pt) | 2018-06-12 |
Family
ID=43356353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BRPI1012070A BRPI1012070A2 (pt) | 2009-06-18 | 2010-06-09 | "dispositivo semicondutor" |
Country Status (7)
Country | Link |
---|---|
US (1) | US8921857B2 (pt) |
EP (1) | EP2445011B1 (pt) |
JP (1) | JP5406295B2 (pt) |
CN (1) | CN102804388B (pt) |
BR (1) | BRPI1012070A2 (pt) |
RU (1) | RU2501117C2 (pt) |
WO (1) | WO2010147032A1 (pt) |
Families Citing this family (60)
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WO2010058581A1 (ja) * | 2008-11-20 | 2010-05-27 | シャープ株式会社 | シフトレジスタ |
US20120082287A1 (en) * | 2009-05-20 | 2012-04-05 | Sharp Kabushiki Kaisha | Shift register |
US9373414B2 (en) * | 2009-09-10 | 2016-06-21 | Beijing Boe Optoelectronics Technology Co., Ltd. | Shift register unit and gate drive device for liquid crystal display |
EP2348531B1 (en) * | 2010-01-26 | 2021-05-26 | Samsung Electronics Co., Ltd. | Thin film transistor and method of manufacturing the same |
KR101570853B1 (ko) | 2010-03-02 | 2015-11-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 신호 출력 회로 및 시프트 레지스터 |
DE112011100749B4 (de) * | 2010-03-02 | 2015-06-11 | Semiconductor Energy Laboratory Co., Ltd. | Impulssignal-Ausgangsschaltung und Schieberegister |
KR101838628B1 (ko) | 2010-03-02 | 2018-03-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 펄스 신호 출력 회로 및 시프트 레지스터 |
TWI415052B (zh) | 2010-12-29 | 2013-11-11 | Au Optronics Corp | 開關裝置與應用該開關裝置之移位暫存器電路 |
JP2012209543A (ja) | 2011-03-11 | 2012-10-25 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US20140027769A1 (en) * | 2011-04-08 | 2014-01-30 | Sharp Kabushiki Kaisha | Semiconductor device and display device |
JP6076617B2 (ja) * | 2011-05-13 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
US8718224B2 (en) | 2011-08-05 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Pulse signal output circuit and shift register |
KR20130043063A (ko) | 2011-10-19 | 2013-04-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
US8962386B2 (en) * | 2011-11-25 | 2015-02-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI493685B (zh) * | 2012-02-10 | 2015-07-21 | E Ink Holdings Inc | 主動陣列基板上之靜電防護結構 |
US9159288B2 (en) * | 2012-03-09 | 2015-10-13 | Apple Inc. | Gate line driver circuit for display element array |
KR101697841B1 (ko) * | 2012-04-20 | 2017-01-18 | 샤프 가부시키가이샤 | 표시 장치 |
US9817032B2 (en) * | 2012-05-23 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Measurement device |
US8704232B2 (en) | 2012-06-12 | 2014-04-22 | Apple Inc. | Thin film transistor with increased doping regions |
US9065077B2 (en) | 2012-06-15 | 2015-06-23 | Apple, Inc. | Back channel etch metal-oxide thin film transistor and process |
US9685557B2 (en) | 2012-08-31 | 2017-06-20 | Apple Inc. | Different lightly doped drain length control for self-align light drain doping process |
US8987027B2 (en) | 2012-08-31 | 2015-03-24 | Apple Inc. | Two doping regions in lightly doped drain for thin film transistors and associated doping processes |
US8748320B2 (en) | 2012-09-27 | 2014-06-10 | Apple Inc. | Connection to first metal layer in thin film transistor process |
US8999771B2 (en) | 2012-09-28 | 2015-04-07 | Apple Inc. | Protection layer for halftone process of third metal |
US9201276B2 (en) | 2012-10-17 | 2015-12-01 | Apple Inc. | Process architecture for color filter array in active matrix liquid crystal display |
KR101995714B1 (ko) * | 2012-12-28 | 2019-07-04 | 엘지디스플레이 주식회사 | 표시장치 |
US9001297B2 (en) | 2013-01-29 | 2015-04-07 | Apple Inc. | Third metal layer for thin film transistor with reduced defects in liquid crystal display |
CN104969283B (zh) * | 2013-02-26 | 2017-06-16 | 夏普株式会社 | 显示装置 |
US9088003B2 (en) | 2013-03-06 | 2015-07-21 | Apple Inc. | Reducing sheet resistance for common electrode in top emission organic light emitting diode display |
WO2014149682A1 (en) * | 2013-03-19 | 2014-09-25 | Applied Materials, Inc. | Multilayer passivation or etch stop tft |
KR102046997B1 (ko) * | 2013-04-04 | 2019-11-21 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 유기 발광 표시 장치 |
US9287406B2 (en) | 2013-06-06 | 2016-03-15 | Macronix International Co., Ltd. | Dual-mode transistor devices and methods for operating same |
JP2015109424A (ja) * | 2013-10-22 | 2015-06-11 | 株式会社半導体エネルギー研究所 | 半導体装置、該半導体装置の作製方法、及び該半導体装置に用いるエッチング溶液 |
US9510454B2 (en) * | 2014-02-28 | 2016-11-29 | Qualcomm Incorporated | Integrated interposer with embedded active devices |
JP6274968B2 (ja) * | 2014-05-16 | 2018-02-07 | ローム株式会社 | 半導体装置 |
JP5968372B2 (ja) * | 2014-07-17 | 2016-08-10 | 学校法人 龍谷大学 | 磁場センサー |
JP6459271B2 (ja) * | 2014-07-23 | 2019-01-30 | Tianma Japan株式会社 | イメージセンサ及びその駆動方法 |
CN107112051B (zh) * | 2014-10-28 | 2020-08-04 | 夏普株式会社 | 单位移位寄存器电路、移位寄存器电路、单位移位寄存器电路的控制方法及显示装置 |
TWI581317B (zh) * | 2014-11-14 | 2017-05-01 | 群創光電股份有限公司 | 薄膜電晶體基板及具備該薄膜電晶體基板之顯示面板 |
WO2016079639A1 (ja) * | 2014-11-20 | 2016-05-26 | 株式会社半導体エネルギー研究所 | 半導体装置、回路基板および電子機器 |
JP2016225587A (ja) * | 2015-05-29 | 2016-12-28 | 株式会社神戸製鋼所 | 酸化物半導体層を含む薄膜トランジスタ |
JP2017103408A (ja) | 2015-12-04 | 2017-06-08 | 株式会社ジャパンディスプレイ | 表示装置 |
KR102474698B1 (ko) * | 2015-12-30 | 2022-12-05 | 엘지디스플레이 주식회사 | 게이트 드라이버 및 이를 포함하는 액정표시장치 |
CN105609138A (zh) * | 2016-01-04 | 2016-05-25 | 京东方科技集团股份有限公司 | 一种移位寄存器、栅极驱动电路、显示面板及显示装置 |
CN105552134A (zh) * | 2016-01-20 | 2016-05-04 | 中国科学院物理研究所 | 场效应二极管 |
WO2017150443A1 (ja) * | 2016-03-02 | 2017-09-08 | シャープ株式会社 | アクティブマトリクス基板、およびアクティブマトリクス基板を備えた液晶表示装置 |
CN205621414U (zh) * | 2016-04-26 | 2016-10-05 | 京东方科技集团股份有限公司 | 静电放电电路、阵列基板和显示装置 |
JP2017212295A (ja) * | 2016-05-24 | 2017-11-30 | 東芝メモリ株式会社 | 半導体装置 |
CN109314317B (zh) * | 2016-06-10 | 2020-10-23 | 夏普株式会社 | 扫描天线 |
CN106959562B (zh) * | 2017-05-09 | 2021-01-08 | 惠科股份有限公司 | 一种显示面板 |
JP7064309B2 (ja) * | 2017-10-20 | 2022-05-10 | 株式会社ジャパンディスプレイ | ダイオード、トランジスタ、およびこれらを有する表示装置 |
JP6600017B2 (ja) * | 2018-01-09 | 2019-10-30 | ローム株式会社 | 半導体装置 |
WO2019186652A1 (ja) * | 2018-03-26 | 2019-10-03 | シャープ株式会社 | 表示装置の製造方法及び表示装置 |
CN112236867A (zh) * | 2018-06-07 | 2021-01-15 | 堺显示器制品株式会社 | 薄膜晶体管及其制造方法 |
WO2019234891A1 (ja) * | 2018-06-07 | 2019-12-12 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタおよびその製造方法 |
CN112292751A (zh) * | 2018-06-07 | 2021-01-29 | 堺显示器制品株式会社 | 薄膜晶体管及其制造方法 |
CN112236868A (zh) * | 2018-06-07 | 2021-01-15 | 堺显示器制品株式会社 | 薄膜晶体管及其制造方法 |
US20220020702A1 (en) * | 2018-12-04 | 2022-01-20 | Hitachi Astemo, Ltd. | Semiconductor Device and in-Vehicle Electronic Control Device Using the Same |
KR20220026172A (ko) * | 2020-08-25 | 2022-03-04 | 엘지디스플레이 주식회사 | 디스플레이 장치 |
CN113437099B (zh) * | 2021-05-13 | 2023-10-31 | 北京大学深圳研究生院 | 光电探测器及其制造方法及相应的光电探测方法 |
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-
2010
- 2010-06-09 US US13/378,375 patent/US8921857B2/en active Active
- 2010-06-09 RU RU2012101613/28A patent/RU2501117C2/ru not_active IP Right Cessation
- 2010-06-09 EP EP10789407.3A patent/EP2445011B1/en active Active
- 2010-06-09 CN CN201080027155.4A patent/CN102804388B/zh active Active
- 2010-06-09 WO PCT/JP2010/059736 patent/WO2010147032A1/ja active Application Filing
- 2010-06-09 JP JP2011519742A patent/JP5406295B2/ja active Active
- 2010-06-09 BR BRPI1012070A patent/BRPI1012070A2/pt not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
RU2501117C2 (ru) | 2013-12-10 |
CN102804388B (zh) | 2016-08-03 |
JPWO2010147032A1 (ja) | 2012-12-06 |
WO2010147032A1 (ja) | 2010-12-23 |
JP5406295B2 (ja) | 2014-02-05 |
US20120087460A1 (en) | 2012-04-12 |
EP2445011A4 (en) | 2013-07-24 |
RU2012101613A (ru) | 2013-07-27 |
EP2445011B1 (en) | 2018-01-10 |
CN102804388A (zh) | 2012-11-28 |
EP2445011A1 (en) | 2012-04-25 |
US8921857B2 (en) | 2014-12-30 |
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