JP5577628B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5577628B2 JP5577628B2 JP2009136203A JP2009136203A JP5577628B2 JP 5577628 B2 JP5577628 B2 JP 5577628B2 JP 2009136203 A JP2009136203 A JP 2009136203A JP 2009136203 A JP2009136203 A JP 2009136203A JP 5577628 B2 JP5577628 B2 JP 5577628B2
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- 239000004065 semiconductor Substances 0.000 title claims description 52
- 239000000758 substrate Substances 0.000 claims description 29
- 239000010410 layer Substances 0.000 description 42
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 206010037660 Pyrexia Diseases 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
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- H01L2924/1305—Bipolar Junction Transistor [BJT]
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- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Description
一方、ワイヤボンディング領域に接続されるワイヤの本数は少ない方が製造効率上好ましいため、従来から、電流容量を確保しつつワイヤの本数を削減する工夫がなされてきた。しかし、ワイヤの本数を削減すると、ワイヤ1本あたりの電流密度が高まる分、発熱量も増すことになる。
請求項1に記載の発明は、複数のIGBTセルを含むIGBT部と、間に前記IGBT部を介して分散するように配置された、複数のFWDセルを含むFWD部とが併設された半導体基板を備え、前記FWDセルは、P導電型領域およびN導電型領域を備えており、該半導体基板の一面側において、前記FWD部と対応する位置にワイヤボンディング領域が設けられたことを要旨とする。
図1及び図2に示す本実施形態の半導体装置11は、共通の半導体基板12に複数のIGBTセルを含むIGBT部13と複数のFDWセルを含むFWD部14とが併設されている。
そして、半導体基板12の主表面には、アルミニウム系材料からなる電極26がN導電型(n+)領域23、P導電型(P+)領域24a及びP導電型(P+)領域24bと電気的に接続されるように形成されている。すなわち、電極126はエミッタ領域に接続されるエミッタ電極及びアノード領域に接続されるアノード電極として機能するようになっている。
エミッタ電極とコレクタ電極との間に所定のコレクタ電圧を印可するとともに、エミッタ電極とゲート電極22との間に所定のゲート電圧を印可すると、エミッタ領域であるN導電型(n+)領域23とN導電型(n−)層19との間の部分(チャネル領域)がN型に反転してチャネルが形成される。すると、このチャネルを通じて、エミッタ電極からN導電型(n−)層19に電子が注入される。
FWD部14においては、アノード電極である電極26とN導電型(n−)層19との間にアノード電圧(順バイアス)を印可し、アノード電圧が閾値を超えると、アノード領域であるP導電型(p+)領域24bとN導電型(n−)層19とが順バイアスされ、FWDが導電する。一方、電極26とN導電型(n−)層19との間に逆バイアスを印可すると、空乏層がアノード領域よりN導電型(n−)層19側へ伸びることで、逆方向耐圧を保持することができる。
(1)複数のIGBTセルを含むIGBT部13と、複数のFWDセルを含むFWD部14とが併設された半導体基板12の主表面側において、FWD部14と対応する位置にワイヤボンディング領域16が設けられている。そして、IGBT部13よりも通電時の発熱量が少ないFWD部14に対応して設けられたワイヤボンディング領域16にワイヤ17が接合されることにより、接合部18における局所的な温度上昇を抑制することができる。
・ワイヤボンディング領域16は電極26の表面側に設けてもよいし、電極26の表面側に別途ボンディングパットを形成するようにしてもよい。
・IGBTセルはトレンチゲート構造に限らず、例えばプレーナ型のセル構造を採用してもよい。
・ワイヤ17は、より断面積の大きいテープ形状やリボン形状のものを用いてもよい。
Claims (1)
- 複数のIGBTセルを含むIGBT部と、間に前記IGBT部を介して分散するように配置された、複数のFWDセルを含むFWD部とが併設された半導体基板を備え、
前記FWDセルは、P導電型領域およびN導電型領域を備えており、
該半導体基板の一面側において、前記FWD部と対応する位置にワイヤボンディング領域が設けられたことを特徴とする半導体装置。
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JP2009136203A JP5577628B2 (ja) | 2009-06-05 | 2009-06-05 | 半導体装置 |
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JP2009136203A JP5577628B2 (ja) | 2009-06-05 | 2009-06-05 | 半導体装置 |
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JP5577628B2 true JP5577628B2 (ja) | 2014-08-27 |
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JP6283468B2 (ja) * | 2013-03-01 | 2018-02-21 | 株式会社豊田中央研究所 | 逆導通igbt |
JP6211867B2 (ja) * | 2013-09-24 | 2017-10-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN110100314B (zh) * | 2017-06-09 | 2022-08-09 | 富士电机株式会社 | 半导体装置及半导体装置的制造方法 |
JP7061983B2 (ja) * | 2019-04-26 | 2022-05-02 | 三菱電機株式会社 | 半導体装置 |
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JP3097383B2 (ja) * | 1993-04-14 | 2000-10-10 | 株式会社日立製作所 | パワー半導体装置 |
JP4421523B2 (ja) * | 2005-06-29 | 2010-02-24 | 三菱電機株式会社 | 検測システム及び検測装置及び無線局 |
JP2007013377A (ja) * | 2005-06-29 | 2007-01-18 | Canon Inc | 画像処理方法、画像処理装置及びプログラム |
US7964911B2 (en) * | 2005-07-26 | 2011-06-21 | Panasonic Corporation | Semiconductor element and electrical apparatus |
JP5011748B2 (ja) * | 2006-02-24 | 2012-08-29 | 株式会社デンソー | 半導体装置 |
JP5125106B2 (ja) * | 2007-01-15 | 2013-01-23 | 株式会社デンソー | 半導体装置 |
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