JP2006332127A - 電力用半導体装置 - Google Patents
電力用半導体装置 Download PDFInfo
- Publication number
- JP2006332127A JP2006332127A JP2005149840A JP2005149840A JP2006332127A JP 2006332127 A JP2006332127 A JP 2006332127A JP 2005149840 A JP2005149840 A JP 2005149840A JP 2005149840 A JP2005149840 A JP 2005149840A JP 2006332127 A JP2006332127 A JP 2006332127A
- Authority
- JP
- Japan
- Prior art keywords
- base layer
- layer
- type base
- type
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 239000012535 impurity Substances 0.000 claims description 9
- 230000002040 relaxant effect Effects 0.000 abstract 1
- 230000005684 electric field Effects 0.000 description 27
- 238000011084 recovery Methods 0.000 description 18
- 239000000758 substrate Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 230000005524 hole trap Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
- H01L29/0834—Anode regions of thyristors or gated bipolar-mode devices, e.g. supplementary regions surrounding anode regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
Abstract
【解決手段】 ダイオードは、n-型ベース層1と、このn-型ベース層1の内部に形成される局所ライフタイム制御領域2と、n-型ベース層1の表面に形成されるn+型カソード層3と、このカソード層3の表面に形成されるカソード電極4と、カソード層3とは反対側のn-型ベース層1の表面に形成されるn型ベース層5と、このn型ベース層5の表面に形成されるp型アノード層6と、このアノード層6の水平方向外側に近接して形成されるp+型接合終端層7と、アノード層6の表面に形成されるアノード電極8とを備えている。低濃度のn-型ベース層1の内部に局所ライフタイム制御領域2を形成するため、ダイオード内の電界強度の傾斜を緩和できアバランシェの発生を抑制でき電力損失を低減できる。
【選択図】 図1
Description
図1は本発明の第1の実施形態に係る電力用半導体装置の断面構造を示す断面図であり、ダイオードの例を示している。
第1の実施形態では、n-型のベース層を設けて電界強度の傾斜を緩和しているが、p型アノード層6直下に中濃度のn型ベース層5があるために、その部分で電界強度の傾斜が大きくなってしまう。そこで、第2の実施形態では、空乏層の基板水平方向の広がりを抑制するために必要な領域、すなわち接合終端領域のみに中濃度のn型ベース層5aを形成することにより、縦方向の電界強度の傾斜を緩和すると同時に、空乏層の水平方向の広がりを抑え素子の小型化を図るものである。
第3の実施形態は、インバータをはじめとする電力変換装置においてスイッチング素子として用いられる絶縁ゲート型バイポーラトランジスタ(IGBT)におけるターンオフ動作時の電力損失を低減するものである。
本発明は、上述したダイオードおよびIGBT以外の半導体装置にも適用可能である。例えば、MOSFETのベース層を低濃度にすれば、ベース層内の電界強度の傾斜を緩和できるため、同様の効果が得られる。
2 局所ライフタイム制御領域
3 カソード層
4 カソード電極
5 n型ベース層
6 アノード層
7 p+型接合終端層
8 アノード電極
Claims (5)
- 第1導電型の第1ベース層と、
前記第1ベース層の表面に形成される第1導電型の第1コンタクト層と、
前記第1コンタクト層とは反対側の前記第1ベース層の表面に形成され、前記第1ベース層よりも不純物濃度の高い第1導電型の第2ベース層と、
前記第1ベース層または前記第2ベース層の表面に形成される第2導電型の第2コンタクト層と、
前記第2コンタクト層の水平方向外側に近接あるいは接して形成される接合終端領域と、を備えることを特徴とする電力用半導体装置。 - 前記第2ベース層は、前記第2コンタクト層に近接あるいは接して、前記接合終端領域に選択的に形成されることを特徴とする請求項1に記載の電力用半導体装置。
- 第1導電型の第1ベース層と、
前記第1ベース層の一方の表面に形成される第1導電型の第1コンタクト層と、
前記第1コンタクト層とは反対側の前記第1ベース層の表面に形成され、前記第1ベース層よりも不純物濃度の高い第1導電型の第2ベース層と、
前記第1ベース層または前記第2ベース層の表面に形成される第2導電型の第3ベース層と、
前記第3ベース層の表面に選択的に形成される第1導電型の第2コンタクト層と、
前記第3ベース層および前記第2コンタクト層を貫通して前記第1ベース層または前記第2ベース層に達するトレンチと、このトレンチ内に、絶縁膜を介して形成されるゲート電極膜と、
前記第3ベース層の水平方向外側に近接あるいは接して形成される接合終端領域と、を備えることを特徴とする電力用半導体装置。 - 前記第2ベース層は、前記第3ベース層に近接あるいは接して、前記接合終端領域に選択的に形成されることを特徴とする請求項3に記載の電力用半導体装置。
- 前記第1ベース層内に形成される局所ライフタイム制御領域を備えることを特徴とする請求項1乃至4のいずれかに記載の電力用半導体装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005149840A JP4843253B2 (ja) | 2005-05-23 | 2005-05-23 | 電力用半導体装置 |
US11/437,657 US7518197B2 (en) | 2005-05-23 | 2006-05-22 | Power semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005149840A JP4843253B2 (ja) | 2005-05-23 | 2005-05-23 | 電力用半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006332127A true JP2006332127A (ja) | 2006-12-07 |
JP4843253B2 JP4843253B2 (ja) | 2011-12-21 |
Family
ID=37523388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005149840A Active JP4843253B2 (ja) | 2005-05-23 | 2005-05-23 | 電力用半導体装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7518197B2 (ja) |
JP (1) | JP4843253B2 (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011024842A1 (ja) * | 2009-08-28 | 2011-03-03 | サンケン電気株式会社 | 半導体装置 |
US7919790B2 (en) | 2008-02-08 | 2011-04-05 | Fuji Electric Systems Co., Ltd. | Semiconductor device and method of producing the same |
KR20140033078A (ko) * | 2011-05-05 | 2014-03-17 | 에이비비 테크놀로지 아게 | 바이폴라 펀치 쓰루 반도체 디바이스 및 그러한 반도체 디바이스의 제조 방법 |
US9570541B2 (en) | 2010-12-17 | 2017-02-14 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP2018117044A (ja) * | 2017-01-18 | 2018-07-26 | 株式会社 日立パワーデバイス | 半導体装置、及びそれを用いた電力変換装置 |
US11527660B2 (en) | 2020-02-28 | 2022-12-13 | Fuji Electric Co., Ltd. | Semiconductor device with a lifetime killer region in the substrate |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100880231B1 (ko) * | 2007-06-20 | 2009-01-28 | 주식회사 동부하이텍 | 반도체 소자 및 그의 제조 방법 |
JP2009020358A (ja) * | 2007-07-12 | 2009-01-29 | Hitachi Ltd | プラズマディスプレイ装置及び半導体装置 |
JP5150195B2 (ja) * | 2007-10-16 | 2013-02-20 | 株式会社東芝 | 縦型半導体装置 |
JP4265684B1 (ja) * | 2007-11-07 | 2009-05-20 | トヨタ自動車株式会社 | 半導体装置 |
EP2073274A1 (en) * | 2007-12-19 | 2009-06-24 | ABB Technology AG | Diode |
US8274109B2 (en) * | 2007-12-26 | 2012-09-25 | Infineon Technologies Ag | Semiconductor device with dynamical avalanche breakdown characteristics and method for manufacturing a semiconductor device |
EP2330617A4 (en) | 2008-09-01 | 2012-01-25 | Rohm Co Ltd | SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR |
JP5045733B2 (ja) * | 2008-12-24 | 2012-10-10 | 株式会社デンソー | 半導体装置 |
US7915944B2 (en) * | 2009-04-27 | 2011-03-29 | General Electric Company | Gate drive circuitry for non-isolated gate semiconductor devices |
DE112010004241B4 (de) * | 2009-11-02 | 2022-09-01 | Fuji Electric Co., Ltd. | Halbleiterbauelemente und Verfahren zur Herstellung von Halbleiterbauelementen |
JP5805756B2 (ja) * | 2010-06-17 | 2015-11-04 | アーベーベー・テヒノロギー・アーゲー | パワー半導体デバイス |
US8748236B2 (en) * | 2010-11-10 | 2014-06-10 | Toyota Jidosha Kabushiki Kaisha | Method for manufacturing semiconductor device |
JP5748476B2 (ja) | 2010-12-28 | 2015-07-15 | ローム株式会社 | 半導体装置およびその製造方法 |
US8933506B2 (en) * | 2011-01-31 | 2015-01-13 | Alpha And Omega Semiconductor Incorporated | Diode structures with controlled injection efficiency for fast switching |
JP6049690B2 (ja) * | 2011-04-06 | 2016-12-21 | アーベーベー・テヒノロギー・アーゲー | バイポーラパンチスルー半導体デバイスおよびそのような半導体デバイスを製造するための方法 |
US8482029B2 (en) * | 2011-05-27 | 2013-07-09 | Infineon Technologies Austria Ag | Semiconductor device and integrated circuit including the semiconductor device |
JP2013074181A (ja) * | 2011-09-28 | 2013-04-22 | Toyota Motor Corp | 半導体装置とその製造方法 |
US8901639B2 (en) * | 2012-07-26 | 2014-12-02 | Cree, Inc. | Monolithic bidirectional silicon carbide switching devices |
JP5807724B2 (ja) * | 2012-09-13 | 2015-11-10 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP5700028B2 (ja) * | 2012-12-11 | 2015-04-15 | トヨタ自動車株式会社 | 半導体装置 |
US9419116B2 (en) * | 2014-01-22 | 2016-08-16 | Alexei Ankoudinov | Diodes and methods of manufacturing diodes |
US9224876B2 (en) * | 2014-01-24 | 2015-12-29 | Alexei Ankoudinov | Fast switching diodes and methods of manufacturing those diodes |
JP6197773B2 (ja) * | 2014-09-29 | 2017-09-20 | トヨタ自動車株式会社 | 半導体装置 |
JP6610768B2 (ja) | 2016-02-23 | 2019-11-27 | 富士電機株式会社 | 半導体装置 |
Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61251083A (ja) * | 1985-04-26 | 1986-11-08 | Rohm Co Ltd | 半導体装置 |
JPH03188679A (ja) * | 1989-12-18 | 1991-08-16 | Matsushita Electron Corp | 半導体装置の製造方法 |
JPH08316479A (ja) * | 1995-03-14 | 1996-11-29 | Mitsubishi Electric Corp | 絶縁ゲート型半導体装置およびその製造方法 |
JP2000049337A (ja) * | 1998-07-28 | 2000-02-18 | Hitachi Ltd | 半導体装置 |
JP2001352079A (ja) * | 2000-06-07 | 2001-12-21 | Nec Corp | ダイオードおよびその製造方法 |
JP2002222952A (ja) * | 2001-01-26 | 2002-08-09 | Toshiba Corp | 高耐圧半導体装置 |
JP2003243672A (ja) * | 2002-02-15 | 2003-08-29 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2004502305A (ja) * | 2000-06-26 | 2004-01-22 | フェアーチャイルド セミコンダクター コーポレイション | ソフトリカバリパワーダイオード及び関連方法 |
JP2004165619A (ja) * | 2002-09-26 | 2004-06-10 | Mitsubishi Electric Corp | 半導体基板及びその製造方法並びに、半導体装置及びその製造方法 |
JP2004186413A (ja) * | 2002-12-03 | 2004-07-02 | Toshiba Corp | 半導体装置 |
JP2005093972A (ja) * | 2003-08-08 | 2005-04-07 | Mitsubishi Electric Corp | 縦型半導体装置及びその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3163677B2 (ja) * | 1991-09-24 | 2001-05-08 | 富士電機株式会社 | Misfet制御型サイリスタを有する半導体装置 |
JPH09264570A (ja) | 1996-03-29 | 1997-10-07 | Matsumuragumi:Kk | 空調装置 |
US5923065A (en) * | 1996-06-12 | 1999-07-13 | Megamos Corporation | Power MOSFET device manufactured with simplified fabrication processes to achieve improved ruggedness and product cost savings |
JPH10321855A (ja) * | 1997-03-18 | 1998-12-04 | Toshiba Corp | 高耐圧半導体装置 |
DE19713980C2 (de) | 1997-04-04 | 1999-03-18 | Siemens Ag | Leistungsdiode, Herstellungsverfahren für diese und Verwendung derselben (FCI-Diode) |
JPH1140822A (ja) | 1997-07-15 | 1999-02-12 | Nissan Motor Co Ltd | 半導体装置 |
EP1835542A3 (en) * | 1999-09-30 | 2007-10-03 | Kabushiki Kaisha Toshiba | Semiconductor device with trench gate |
EP1267415A3 (en) * | 2001-06-11 | 2009-04-15 | Kabushiki Kaisha Toshiba | Power semiconductor device having resurf layer |
JP2004022941A (ja) * | 2002-06-19 | 2004-01-22 | Toshiba Corp | 半導体装置 |
JP4393053B2 (ja) | 2002-10-25 | 2010-01-06 | 株式会社豊田中央研究所 | バイポーラ型半導体装置とその製造方法 |
-
2005
- 2005-05-23 JP JP2005149840A patent/JP4843253B2/ja active Active
-
2006
- 2006-05-22 US US11/437,657 patent/US7518197B2/en active Active
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61251083A (ja) * | 1985-04-26 | 1986-11-08 | Rohm Co Ltd | 半導体装置 |
JPH03188679A (ja) * | 1989-12-18 | 1991-08-16 | Matsushita Electron Corp | 半導体装置の製造方法 |
JPH08316479A (ja) * | 1995-03-14 | 1996-11-29 | Mitsubishi Electric Corp | 絶縁ゲート型半導体装置およびその製造方法 |
JP2000049337A (ja) * | 1998-07-28 | 2000-02-18 | Hitachi Ltd | 半導体装置 |
JP2001352079A (ja) * | 2000-06-07 | 2001-12-21 | Nec Corp | ダイオードおよびその製造方法 |
JP2004502305A (ja) * | 2000-06-26 | 2004-01-22 | フェアーチャイルド セミコンダクター コーポレイション | ソフトリカバリパワーダイオード及び関連方法 |
JP2002222952A (ja) * | 2001-01-26 | 2002-08-09 | Toshiba Corp | 高耐圧半導体装置 |
JP2003243672A (ja) * | 2002-02-15 | 2003-08-29 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
JP2004165619A (ja) * | 2002-09-26 | 2004-06-10 | Mitsubishi Electric Corp | 半導体基板及びその製造方法並びに、半導体装置及びその製造方法 |
JP2004186413A (ja) * | 2002-12-03 | 2004-07-02 | Toshiba Corp | 半導体装置 |
JP2005093972A (ja) * | 2003-08-08 | 2005-04-07 | Mitsubishi Electric Corp | 縦型半導体装置及びその製造方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8076173B2 (en) | 2008-02-08 | 2011-12-13 | Fuji Electric Co., Ltd. | Semiconductor device and method of producing the same |
US7919790B2 (en) | 2008-02-08 | 2011-04-05 | Fuji Electric Systems Co., Ltd. | Semiconductor device and method of producing the same |
US8969954B2 (en) | 2009-08-28 | 2015-03-03 | Sanken Electric Co., Ltd. | Semiconductor device having plurality of peripheral trenches in peripheral region around cell region |
KR101353903B1 (ko) * | 2009-08-28 | 2014-01-22 | 산켄덴키 가부시키가이샤 | 반도체 장치 |
JP5609876B2 (ja) * | 2009-08-28 | 2014-10-22 | サンケン電気株式会社 | 半導体装置 |
WO2011024842A1 (ja) * | 2009-08-28 | 2011-03-03 | サンケン電気株式会社 | 半導体装置 |
US9570541B2 (en) | 2010-12-17 | 2017-02-14 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
US10204979B2 (en) | 2010-12-17 | 2019-02-12 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
KR20140033078A (ko) * | 2011-05-05 | 2014-03-17 | 에이비비 테크놀로지 아게 | 바이폴라 펀치 쓰루 반도체 디바이스 및 그러한 반도체 디바이스의 제조 방법 |
KR101851821B1 (ko) | 2011-05-05 | 2018-06-11 | 에이비비 슈바이쯔 아게 | 바이폴라 펀치 쓰루 반도체 디바이스 및 그러한 반도체 디바이스의 제조 방법 |
JP2018117044A (ja) * | 2017-01-18 | 2018-07-26 | 株式会社 日立パワーデバイス | 半導体装置、及びそれを用いた電力変換装置 |
WO2018135224A1 (ja) * | 2017-01-18 | 2018-07-26 | 株式会社日立パワーデバイス | 半導体装置、及びそれを用いた電力変換装置 |
US11527660B2 (en) | 2020-02-28 | 2022-12-13 | Fuji Electric Co., Ltd. | Semiconductor device with a lifetime killer region in the substrate |
Also Published As
Publication number | Publication date |
---|---|
US20060278925A1 (en) | 2006-12-14 |
US7518197B2 (en) | 2009-04-14 |
JP4843253B2 (ja) | 2011-12-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4843253B2 (ja) | 電力用半導体装置 | |
JP5787853B2 (ja) | 電力用半導体装置 | |
JP5059025B2 (ja) | 超高速リカバリダイオード | |
JP4791704B2 (ja) | 逆導通型半導体素子とその製造方法 | |
US9299695B2 (en) | Semiconductor device | |
JP4895918B2 (ja) | ロバスト性が高く、スイッチング損失の少ない、ソフトスイッチング半導体素子 | |
KR100726901B1 (ko) | 반도체 장치 | |
JP6777244B2 (ja) | 半導体装置 | |
JP3968912B2 (ja) | ダイオード | |
WO2011125235A1 (ja) | 半導体装置 | |
JP2017201644A (ja) | ダイオード、およびそれを用いた電力変換装置 | |
JP2007258363A (ja) | 半導体装置 | |
KR20110094066A (ko) | 바이폴러 펀치-스루 반도체 디바이스 및 이러한 반도체 디바이스를 제조하는 방법 | |
JP2002517097A (ja) | パワーダイオード構造体 | |
JP4119148B2 (ja) | ダイオード | |
JPH1074959A (ja) | 電力用半導体素子 | |
US6147381A (en) | Field effect-controllable semiconductor component | |
JP2006295014A (ja) | Igbtとそれを用いた電力変換装置 | |
KR20150061971A (ko) | 전력 반도체 소자 및 그의 제조 방법 | |
CN111129135B (zh) | 半导体装置 | |
JP2007150121A (ja) | 電力用半導体装置およびそれを用いた電力変換装置 | |
JP2006245475A (ja) | 半導体装置及びその製造方法 | |
GB2612636A (en) | Semiconductor device | |
US9209287B2 (en) | Power semiconductor device | |
JP6002387B2 (ja) | ダイオードおよびそれを用いた電力変換システム |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060830 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060830 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080620 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100413 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100614 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110624 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110822 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110909 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20111007 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4843253 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20141014 Year of fee payment: 3 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313115 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313114 Free format text: JAPANESE INTERMEDIATE CODE: R313117 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |