JP6610768B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6610768B2 JP6610768B2 JP2018501760A JP2018501760A JP6610768B2 JP 6610768 B2 JP6610768 B2 JP 6610768B2 JP 2018501760 A JP2018501760 A JP 2018501760A JP 2018501760 A JP2018501760 A JP 2018501760A JP 6610768 B2 JP6610768 B2 JP 6610768B2
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- 239000000758 substrate Substances 0.000 claims description 149
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- 238000009826 distribution Methods 0.000 claims description 25
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
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- 238000010894 electron beam technology Methods 0.000 description 4
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- 230000010355 oscillation Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 230000008034 disappearance Effects 0.000 description 3
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- 239000007769 metal material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
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- 238000010438 heat treatment Methods 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910052759 nickel Inorganic materials 0.000 description 1
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Description
特許文献1 米国特許第7842590号明細書
Claims (24)
- 半導体基板と、
前記半導体基板のおもて面側に形成された第1導電型の第1領域と、
前記第1領域よりも前記半導体基板のうら面側に形成された第2導電型のドリフト領域と、
前記ドリフト領域よりも前記半導体基板のうら面側に形成され、前記ドリフト領域の不純物濃度よりも高い不純物濃度のピークを複数含む、第2導電型のバッファ領域と、
前記半導体基板のうら面側に配置され、キャリアライフタイムを短くするライフタイムキラーと
を備え、
前記バッファ領域における不純物濃度分布は、ドナーとして水素を含む複数のピークを有し、
前記ライフタイムキラーの濃度のピークが、前記バッファ領域における不純物濃度のピークのうち最も前記半導体基板のおもて面側のピークと、前記半導体基板のうら面との間に配置され、且つ、前記バッファ領域における不純物濃度のピークのいずれにも重ならない位置に配置された半導体装置。 - 前記ライフタイムキラーの濃度のピークが、前記バッファ領域における不純物濃度のピークのうち最も前記半導体基板のうら面側のピークよりも、前記半導体基板のうら面側に配置された
請求項1に記載の半導体装置。 - 前記バッファ領域における不純物濃度のピークのうち最も前記半導体基板のうら面側のピークと、前記半導体基板のうら面との間に形成された第1導電型の第2領域を更に備え、
前記ライフタイムキラーの濃度のピークが、前記第2領域における不純物濃度のピークと重ならない位置に配置された
請求項1または2に記載の半導体装置。 - 前記ライフタイムキラーの濃度のピークが、前記第2領域における不純物濃度のピークよりも前記半導体基板のおもて面側に配置された
請求項3に記載の半導体装置。 - 前記ライフタイムキラーの濃度のピークと前記第2領域における不純物濃度のピークとの距離が、前記ライフタイムキラーの濃度のピークと前記バッファ領域における不純物濃度のピークのうち最も前記半導体基板のうら面側のピークとの距離よりも大きい
請求項4に記載の半導体装置。 - 前記ライフタイムキラーの濃度のピークが、前記バッファ領域における不純物濃度のいずれか2つのピークの間に配置された
請求項1に記載の半導体装置。 - 前記バッファ領域は、前記ライフタイムキラーの濃度のピークを挟む不純物濃度の2つのピークを有し、
前記ライフタイムキラーの濃度分布の半値全幅が、当該2つのピークの間隔の70%以上である
請求項6に記載の半導体装置。 - 半導体基板と、
前記半導体基板のおもて面側に形成された第1導電型の第1領域と、
前記第1領域よりも前記半導体基板のうら面側に形成された第2導電型のドリフト領域と、
前記ドリフト領域よりも前記半導体基板のうら面側に形成され、前記ドリフト領域の不純物濃度よりも高い不純物濃度のピークを複数含む、第2導電型のバッファ領域と、
前記半導体基板のうら面側に配置され、キャリアライフタイムを短くするライフタイムキラーと、
前記バッファ領域における不純物濃度のピークのうち最も前記半導体基板のうら面側のピークと、前記半導体基板のうら面との間に形成された第1導電型の第2領域と、
前記第2領域と同一の深さ位置に形成された、第2導電型のカソード領域と
を備え、
前記ライフタイムキラーの濃度のピークが、前記バッファ領域における不純物濃度のピークのうち最も前記半導体基板のおもて面側のピークと、前記半導体基板のうら面との間で前記第2領域における不純物濃度のピークよりも前記半導体基板のおもて面側に配置され、且つ、前記バッファ領域における不純物濃度のピークおよび前記第2領域における不純物濃度のピークのいずれにも重ならない位置に配置され、
前記ライフタイムキラーが、前記カソード領域の上方にも形成される
半導体装置。 - 前記カソード領域と前記第2領域が、前記半導体基板のうら面に形成される
請求項8に記載の半導体装置。 - 半導体基板と、
前記半導体基板のおもて面側に形成された第1導電型の第1領域と、
前記第1領域よりも前記半導体基板のうら面側に形成された第2導電型のドリフト領域と、
前記ドリフト領域よりも前記半導体基板のうら面側に形成され、前記ドリフト領域の不純物濃度よりも高い不純物濃度のピークを複数含む、第2導電型のバッファ領域と、
前記バッファ領域における不純物濃度のピークのうち最も前記半導体基板のうら面側のピークと、前記半導体基板のうら面との間において、前記半導体基板のうら面に接して設けられた第1導電型のコレクタ領域と、
前記半導体基板のうら面側に配置され、キャリアライフタイムを短くするライフタイムキラーと
を備え、
前記ライフタイムキラーの濃度のピークが、前記バッファ領域における不純物濃度のピークのうち最も前記半導体基板のおもて面側のピークと、前記半導体基板のうら面との間に配置され、且つ、前記バッファ領域における不純物濃度のピークおよび前記コレクタ領域における不純物濃度のピークのいずれにも重ならない位置に配置された半導体装置。 - 前記ライフタイムキラーの濃度のピークが、前記コレクタ領域における不純物濃度のピークよりも前記半導体基板のおもて面側に配置された
請求項10に記載の半導体装置。 - 前記コレクタ領域と同一の深さ位置に形成された、第2導電型のカソード領域を更に備え、
前記ライフタイムキラーが、前記カソード領域の上方にも形成される
請求項10または11に記載の半導体装置。 - 前記ライフタイムキラーの濃度のピークは、前記コレクタ領域における濃度のピークよりも低濃度である
請求項10から12のいずれか一項に記載の半導体装置。 - 半導体基板と、
前記半導体基板のおもて面側に形成された第1導電型の第1領域と、
前記第1領域よりも前記半導体基板のうら面側に形成された第2導電型のドリフト領域と、
前記ドリフト領域よりも前記半導体基板のうら面側に形成され、前記ドリフト領域の不純物濃度よりも高い不純物濃度のピークを1以上含む、第2導電型のバッファ領域と、
前記半導体基板のうら面側に配置され、キャリアライフタイムを短くするライフタイムキラーと
を備え、
前記バッファ領域における不純物濃度分布は複数のピークを有し、
前記半導体基板の深さ方向における前記ライフタイムキラーの濃度分布は、複数のピークを有し、
前記ライフタイムキラーの濃度のピークが、前記バッファ領域における不純物濃度のピークのうち最も前記半導体基板のおもて面側のピークと、前記半導体基板のうら面との間に配置され、且つ、前記バッファ領域における不純物濃度のピークのいずれにも重ならない位置に配置された半導体装置。 - 半導体基板と、
前記半導体基板のおもて面側に形成された第1導電型の第1領域と、
前記第1領域よりも前記半導体基板のうら面側に形成された第2導電型のドリフト領域と、
前記ドリフト領域よりも前記半導体基板のうら面側に形成され、前記ドリフト領域の不純物濃度よりも高い不純物濃度のピークを1以上含む、第2導電型のバッファ領域と、
前記半導体基板のうら面側に配置され、キャリアライフタイムを短くするライフタイムキラーと
を備え、
前記バッファ領域における不純物濃度分布は複数のピークを有し、
前記ライフタイムキラーの濃度のピークは、前記バッファ領域における不純物濃度のピークのうち最も前記半導体基板のうら面側のピークよりも高濃度であり、
前記ライフタイムキラーの濃度のピークが、前記バッファ領域における不純物濃度のピークのうち最も前記半導体基板のおもて面側のピークと、前記半導体基板のうら面との間に配置され、且つ、前記バッファ領域における不純物濃度のピークのいずれにも重ならない位置に配置された半導体装置。 - 前記ライフタイムキラーはヘリウムである
請求項1から15のいずれか一項に記載の半導体装置。 - 前記半導体基板の深さ方向における、前記ライフタイムキラーの濃度分布の半値全幅が、5μm以上である
請求項1から16のいずれか一項に記載の半導体装置。 - 半導体基板と、
前記半導体基板のおもて面側に形成された第1導電型の第1領域と、
前記第1領域よりも前記半導体基板のうら面側に形成された第2導電型のドリフト領域と、
前記ドリフト領域よりも前記半導体基板のうら面側に形成され、前記ドリフト領域の不純物濃度よりも高い不純物濃度のピークを1以上含む、第2導電型のバッファ領域と、
前記バッファ領域における不純物濃度のピークのうち最も前記半導体基板のうら面側のピークと、前記半導体基板のうら面との間に形成された第1導電型の第2領域と
を備え、
前記半導体基板は、トランジスタが形成されるトランジスタ部と、ダイオードが形成されるダイオード部とを有し、
前記第2領域は、前記ダイオード部において離散的に設けられ、
前記半導体基板のうら面と平行な面において、前記トランジスタ部および前記ダイオード部の境界と、前記第2領域との距離Dが、前記第2領域どうしの間隔より大きい半導体装置。 - 前記距離Dが、前記半導体基板の厚みよりも大きい
請求項18に記載の半導体装置。 - 前記距離Dが、前記第2領域の幅より大きい
請求項18または19に記載の半導体装置。 - 前記ダイオード部は、
複数のダミートレンチ構造と、
前記ダミートレンチ構造に挟まれた前記半導体基板の領域であるメサ部と
を有し、
前記距離Dが、前記距離Dと同一の方向における前記メサ部の幅より大きい
請求項18から20のいずれか一項に記載の半導体装置。 - 前記ダイオード部は、
前記半導体基板のうら面と平行な面において延伸方向に延伸した直線部分を含むダミートレンチ構造と、
前記第2領域のうら面側に形成された、第2導電型のカソード領域と
を有し、
前記延伸方向における前記カソード領域と前記第2領域との距離DYが、前記延伸方向における前記第2領域どうしの間隔および前記第2領域の幅の少なくとも一方より大きい
請求項18から21のいずれか一項に記載の半導体装置。 - 前記ダイオード部は、
前記半導体基板のうら面と平行な面において延伸方向に延伸した直線部分を含むダミートレンチ構造と、
前記第2領域のうら面側に形成された、第2導電型のカソード領域と
を有し、
前記延伸方向における前記カソード領域と前記第2領域との距離DYが、前記距離Dと同一である
請求項18から22のいずれか一項に記載の半導体装置。 - 前記バッファ領域の前記複数のピークは、ドナーとして水素を含む
請求項8から23のいずれか一項に記載の半導体装置。
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Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6665932B2 (ja) * | 2016-06-24 | 2020-03-13 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
WO2019017104A1 (ja) * | 2017-07-18 | 2019-01-24 | 富士電機株式会社 | 半導体装置 |
JP7102948B2 (ja) * | 2017-10-26 | 2022-07-20 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
JP7069646B2 (ja) * | 2017-11-06 | 2022-05-18 | 富士電機株式会社 | 半導体装置 |
JP6777245B2 (ja) * | 2017-11-16 | 2020-10-28 | 富士電機株式会社 | 半導体装置 |
JP7151084B2 (ja) * | 2018-01-11 | 2022-10-12 | 株式会社デンソー | 半導体装置 |
JP7102808B2 (ja) * | 2018-03-15 | 2022-07-20 | 富士電機株式会社 | 半導体装置 |
CN111066149B (zh) * | 2018-03-15 | 2024-02-06 | 富士电机株式会社 | 半导体装置 |
JP7187787B2 (ja) * | 2018-03-15 | 2022-12-13 | 富士電機株式会社 | 半導体装置 |
DE112019000094T5 (de) * | 2018-03-19 | 2020-09-24 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und verfahren zum herstellen einerhalbleitervorrichtung |
DE112019001741T5 (de) * | 2018-11-16 | 2020-12-17 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und herstellungsverfahren |
JP7078133B2 (ja) * | 2018-11-16 | 2022-05-31 | 富士電機株式会社 | 半導体装置および製造方法 |
CN109659236B (zh) * | 2018-12-17 | 2022-08-09 | 吉林华微电子股份有限公司 | 降低vdmos恢复时间的工艺方法及其vdmos半导体器件 |
CN109713041B (zh) * | 2018-12-27 | 2022-05-24 | 四川立泰电子有限公司 | 一种适用于超结dmos器件的改良结构 |
JP7099550B2 (ja) * | 2018-12-28 | 2022-07-12 | 富士電機株式会社 | 半導体装置および製造方法 |
WO2020162175A1 (ja) * | 2019-02-04 | 2020-08-13 | 住友電気工業株式会社 | 炭化珪素半導体装置 |
EP3842574B1 (en) * | 2019-04-26 | 2024-03-27 | Fuji Electric Co., Ltd. | Semiconductor device and manufacturing method |
CN112310226B (zh) * | 2019-07-29 | 2022-01-28 | 珠海格力电器股份有限公司 | 快恢复二极管及其制备方法 |
JP7404702B2 (ja) | 2019-08-09 | 2023-12-26 | 富士電機株式会社 | 半導体装置 |
WO2021070539A1 (ja) | 2019-10-11 | 2021-04-15 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN110797405A (zh) * | 2019-10-22 | 2020-02-14 | 上海睿驱微电子科技有限公司 | 一种沟槽栅igbt半导体器件及其制备方法 |
WO2021125140A1 (ja) * | 2019-12-17 | 2021-06-24 | 富士電機株式会社 | 半導体装置 |
CN114051653A (zh) * | 2020-01-17 | 2022-02-15 | 富士电机株式会社 | 半导体装置和半导体装置的制造方法 |
WO2021232548A1 (zh) * | 2020-05-21 | 2021-11-25 | 华大半导体有限公司 | 功率半导体装置及其制备方法 |
CN111900087B (zh) * | 2020-08-31 | 2022-09-20 | 华虹半导体(无锡)有限公司 | Igbt器件的制造方法 |
JP2022112689A (ja) | 2021-01-22 | 2022-08-03 | 株式会社 日立パワーデバイス | 半導体装置の製造方法、半導体装置、半導体モジュールおよび電力変換装置 |
JP2022169322A (ja) * | 2021-04-27 | 2022-11-09 | 株式会社デンソー | 半導体装置 |
WO2022265061A1 (ja) * | 2021-06-17 | 2022-12-22 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN113571415B (zh) * | 2021-09-22 | 2022-01-11 | 上海积塔半导体有限公司 | Igbt器件及其制作方法 |
CN113555416B (zh) * | 2021-09-22 | 2021-12-31 | 四川上特科技有限公司 | 一种功率二极管器件 |
CN113851379A (zh) * | 2021-09-24 | 2021-12-28 | 上海积塔半导体有限公司 | Igbt器件及其制作方法 |
CN113921395A (zh) * | 2021-10-13 | 2022-01-11 | 南瑞联研半导体有限责任公司 | 一种低损耗igbt芯片集电极结构及其制备方法 |
CN113659014B (zh) * | 2021-10-20 | 2022-01-18 | 四川洪芯微科技有限公司 | 一种含有阴极短接槽栅结构的功率二极管 |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08125200A (ja) * | 1994-10-25 | 1996-05-17 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
DE10361136B4 (de) * | 2003-12-23 | 2005-10-27 | Infineon Technologies Ag | Halbleiterdiode und IGBT |
DE102004039208B4 (de) | 2004-08-12 | 2014-01-16 | Infineon Technologies Ag | Verfahren zur Herstellung eines Leistungsbauelements mit einer vergrabenen n-dotierten Halbleiterzone und Leistungsbauelement |
JP4843253B2 (ja) * | 2005-05-23 | 2011-12-21 | 株式会社東芝 | 電力用半導体装置 |
JP5374883B2 (ja) * | 2008-02-08 | 2013-12-25 | 富士電機株式会社 | 半導体装置およびその製造方法 |
US7842590B2 (en) | 2008-04-28 | 2010-11-30 | Infineon Technologies Austria Ag | Method for manufacturing a semiconductor substrate including laser annealing |
JP2011086883A (ja) * | 2009-10-19 | 2011-04-28 | Denso Corp | 絶縁ゲートバイポーラトランジスタおよびその設計方法 |
CN102687277B (zh) * | 2009-11-02 | 2016-01-20 | 富士电机株式会社 | 半导体器件以及用于制造半导体器件的方法 |
CN102208454B (zh) * | 2010-03-31 | 2013-03-13 | 比亚迪股份有限公司 | 快速恢复二极管 |
JP5605073B2 (ja) * | 2010-08-17 | 2014-10-15 | 株式会社デンソー | 半導体装置 |
JP2012256628A (ja) * | 2011-06-07 | 2012-12-27 | Renesas Electronics Corp | Igbtおよびダイオード |
JP2013074181A (ja) * | 2011-09-28 | 2013-04-22 | Toyota Motor Corp | 半導体装置とその製造方法 |
JP5733417B2 (ja) * | 2011-11-15 | 2015-06-10 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
EP2800143B1 (en) * | 2011-12-28 | 2020-04-08 | Fuji Electric Co., Ltd. | Semiconductor device and method for producing semiconductor device |
JP5741716B2 (ja) * | 2012-01-19 | 2015-07-01 | 富士電機株式会社 | 半導体装置およびその製造方法 |
EP2793251B1 (en) * | 2012-03-19 | 2019-05-08 | Fuji Electric Co., Ltd. | Production method for semiconductor device |
KR101982737B1 (ko) * | 2012-03-30 | 2019-05-27 | 후지 덴키 가부시키가이샤 | 반도체 장치의 제조방법 |
WO2014087499A1 (ja) * | 2012-12-05 | 2014-06-12 | トヨタ自動車株式会社 | 半導体装置 |
US9627517B2 (en) | 2013-02-07 | 2017-04-18 | Infineon Technologies Ag | Bipolar semiconductor switch and a manufacturing method therefor |
EP2980856B1 (en) * | 2013-03-25 | 2020-07-22 | Fuji Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP6037012B2 (ja) * | 2013-06-26 | 2016-11-30 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN103594503A (zh) * | 2013-11-19 | 2014-02-19 | 西安永电电气有限责任公司 | 具有浮结结构的igbt |
JP2015153784A (ja) * | 2014-02-10 | 2015-08-24 | トヨタ自動車株式会社 | 半導体装置の製造方法及び半導体装置 |
JP6181597B2 (ja) * | 2014-04-28 | 2017-08-16 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
DE112015000206T5 (de) * | 2014-10-03 | 2016-08-25 | Fuji Electric Co., Ltd. | Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung |
JP2016162807A (ja) * | 2015-02-27 | 2016-09-05 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
JP6477897B2 (ja) * | 2015-09-16 | 2019-03-06 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
US10637658B2 (en) | 2017-01-25 | 2020-04-28 | Salesforce.Com, Inc. | Secure internal user authentication leveraging public key cryptography and key splitting |
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US20220076956A1 (en) | 2022-03-10 |
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