JP6237915B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP6237915B2 JP6237915B2 JP2016546400A JP2016546400A JP6237915B2 JP 6237915 B2 JP6237915 B2 JP 6237915B2 JP 2016546400 A JP2016546400 A JP 2016546400A JP 2016546400 A JP2016546400 A JP 2016546400A JP 6237915 B2 JP6237915 B2 JP 6237915B2
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- Electrodes Of Semiconductors (AREA)
Description
まず、この発明にかかる実施の形態1の半導体装置であるダイオードの構成について説明する。図1は、この発明にかかる実施の形態1のダイオードの要部断面図である。図1において、この発明にかかる実施の形態1のダイオード20は、縦型パワーダイオードであって、pin構造を有している。図1においては、例えば、耐圧クラスが1200Vであるダイオード20を示している。
次に、ダイオード20に特有の空孔−酸素複合欠陥領域11の層構造および特性分布について説明する。図2は、この発明にかかる実施の形態1のダイオード20の活性部9における層構造および特性分布を示す説明図である。図2(a)においては、ダイオード20の活性部9における層構造の要部断面図を示している。
次に、この発明にかかる半導体装置の製造方法として、実施の形態1のダイオード20の製造方法について説明する。図4は、この発明にかかる実施の形態1のダイオード20の製造フローを示す断面図である。実施の形態1において、ダイオード20の定格電圧は1200Vとするが、この定格電圧に限るものではない。以下、工程の順序に沿って製造方法を説明する。
次に、この発明にかかる実施の形態2のダイオードについて説明する。この発明にかかる実施の形態2のダイオードは、上述した実施の形態1に記載のダイオード20における空孔−酸素複合欠陥領域11を、電子線照射から白金の熱拡散に代えて製造されている。白金の熱拡散工程前は、上述した実施の形態1と同じとしてよい。
2 アノード電極
3 カソード電極
4 p型アノード層
5 n型カソード層
6 pn接合
6a エッジ終端
7 ガードリング
8 酸化膜
9 活性部
10 エッジ終端部
11 空孔−酸素複合欠陥領域
12 電子線照射
15 空乏層
20 ダイオード
30 フィールドプレート
50 半導体基板
50a 表面
50b 裏面
52 研削面
53 イオン注入
54 高濃度酸素領域
55 空孔形成領域
56 酸素通過領域
Claims (4)
- 第1導電型の半導体基板と、
前記半導体基板の第1主面側に形成された第1導電型のドリフト層と、
前記ドリフト層に沿って選択的に形成され、前記ドリフト層より低抵抗の第2導電型アノード層と、
前記半導体基板の第2主面側の表面層に形成され、前記ドリフト層と接する第1導電型のカソード層と、
空孔と酸素との複合欠陥で形成された空孔−酸素複合欠陥領域と、
を備えた半導体装置であって、
前記空孔−酸素複合欠陥領域は、
前記空孔−酸素複合欠陥領域に重金属を拡散させて形成される再結合中心として機能する複合欠陥を備えており、
前記カソード層と前記ドリフト層との境界面から前記半導体基板の第1主面に向かう方向の深さがRであり、
前記半導体基板の比抵抗をρ、前記アノード層と前記ドリフト層とのpn接合から前記カソード層までの厚さをt、前記pn接合に印加される逆バイアス電圧Vで前記pn接合から前記ドリフト層内に拡がる空乏層幅が0.54×√(ρ×V)であるWに対して、0<R≦t−Wで表される深さに設けられていることを特徴とする半導体装置。 - 前記重金属拡散は、白金拡散であることを特徴とする請求項1に記載の半導体装置。
- 前記第1導電型半導体基板の一方の主面に選択的に前記半導体基板より低抵抗の第2導電型領域を有するデバイスがダイオードまたはダイオードを含む半導体装置であることを特徴とする請求項1または2に記載の半導体装置。
- 第1導電型の半導体基板と、
前記半導体基板の第1主面側に形成された第1導電型のドリフト層と、
前記ドリフト層に沿って選択的に形成され、前記ドリフト層より低抵抗の第2導電型アノード層と、
前記半導体基板の第2主面側の表面層に形成され、前記ドリフト層と接する第1導電型のカソード層と、
空孔と酸素との複合欠陥で形成された空孔−酸素複合欠陥領域と、
を備え、
前記空孔−酸素複合欠陥領域は、
前記カソード層と前記ドリフト層との境界面から前記半導体基板の第1主面に向かう方向の深さがRであり、
前記半導体基板の比抵抗をρ、前記アノード層と前記ドリフト層とのpn接合から前記カソード層までの厚さをt、前記pn接合に印加される逆バイアス電圧Vで前記pn接合から前記ドリフト層内に拡がる空乏層幅が0.54×√(ρ×V)であるWに対して、0<R≦t−Wで表される深さに設けられている半導体装置の製造方法であって、
前記空孔−酸素複合欠陥領域を、
局所的に高濃度である酸素を含む高濃度酸素領域を酸素のイオン注入により所定の位置に形成した後、重金属拡散を行いライフタイムを低下させることによって形成することを特徴とする半導体装置の製造方法。
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