JP5771984B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5771984B2 JP5771984B2 JP2010291348A JP2010291348A JP5771984B2 JP 5771984 B2 JP5771984 B2 JP 5771984B2 JP 2010291348 A JP2010291348 A JP 2010291348A JP 2010291348 A JP2010291348 A JP 2010291348A JP 5771984 B2 JP5771984 B2 JP 5771984B2
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- 239000004065 semiconductor Substances 0.000 title claims description 182
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Power Conversion In General (AREA)
Description
図1は、実施の形態1にかかる逆阻止IGBTを示す断面図である。図1に示すように、逆阻止IGBTは、n-型(第1導電型)のドリフト領域1となる半導体基板上に、活性領域100と、活性領域100の外側に設けられた耐圧構造領域120と、耐圧構造領域120の外側に設けられた分離部130とを備えている。半導体基板の厚さは、例えば600V耐圧クラスの逆阻止IGBTの特性に悪影響を及ぼさないためには、例えば90μm以上であればよい。活性領域100には、ドリフト領域1のおもて面に設けられたエミッタ・ゲート領域、およびドリフト領域1の裏面に設けられたp型(第2導電型)のコレクタ領域10からなる縦型のIGBTが構成されている。活性領域100の詳細な説明については後述する。ドリフト領域1は、第1半導体領域に相当する。コレクタ領域10は、第5半導体領域に相当する。
図14に、実施の形態2にかかる逆阻止IGBTを示す断面図である。図14には、実施の形態2にかかる逆阻止IGBTの活性領域の断面構造を示す。実施の形態1に示す逆阻止IGBTの活性領域100との相違点はコレクタ領域10とドリフト領域1の間にn型(第1導電型)のLCS(Leakage Current Stop)層12が設けられているという点である。耐圧構造領域120と分離部130については、図1の実施の形態1と同様の構造である。図14では、図4と同様に電界強度を示しており、順バイアス時を実線で示し、逆バイアス時を点線で示している。n型のLCS層12は2μmの厚さで平均不純物量が1.0×1012cm-2以下となる不純物濃度としている。LCS層12は、第8半導体領域に相当する。
2 ベース領域
3 エミッタ領域
5 シェル領域
6 ゲート絶縁膜
7 ゲート電極
8 層間絶縁膜
9 エミッタ電極
10 コレクタ領域
11 コレクタ電極
100 活性領域
Claims (9)
- 第1導電型の第1半導体領域と、
前記第1半導体領域の表面に選択的に設けられた第2導電型の第2半導体領域と、
前記第2半導体領域の表面に選択的に設けられた第1導電型の第3半導体領域と、
前記第3半導体領域から前記第1半導体領域の表面に跨るように、絶縁膜を介して設けられた第1電極と、
前記第2半導体領域および前記第3半導体領域に接続された第2電極と、
前記第1半導体領域と前記第2半導体領域の間に、少なくとも当該第2半導体領域の下の領域を占めるように設けられた第1導電型の第4半導体領域と、
前記第1半導体領域の裏面に設けられた第2導電型の第5半導体領域と、
前記第5半導体領域に接する第3電極と、を備え、
前記第4半導体領域は、前記第1半導体領域よりも高い不純物濃度で、かつ、当該第4半導体領域中の第1導電型不純物の平均不純物量が8.0×1011cm-2以下となる不純物濃度を有し、
前記第1半導体領域の抵抗率が22Ωcm以上であることを特徴とする半導体装置。 - 前記第1半導体領域の抵抗率が35Ωcm以下であることを特徴とする請求項1に記載の半導体装置。
- 前記第4半導体領域は、前記第2半導体領域の下の領域全体を囲むように設けられていることを特徴とする請求項1または2に記載の半導体装置。
- 前記第4半導体領域は、当該第4半導体領域中の第1導電型不純物の平均不純物量が5.0×10 11 cm -2 以下となる不純物濃度を有することを特徴とする請求項1〜3のいずれか一つに記載の半導体装置。
- 前記第4半導体領域は、当該第4半導体領域中の第1導電型不純物の平均不純物量が1.0×10 11 cm -2 以下となる不純物濃度を有することを特徴とする請求項1〜4のいずれか一つに記載の半導体装置。
- 前記第1半導体領域の外周端部に設けられ、当該第1半導体領域のおもて面から裏面まで貫通し、前記第5半導体領域に接する第2導電型の第6半導体領域を、さらに備えることを特徴とする請求項1〜5のいずれか一つに記載の半導体装置。
- 第1半導体領域上に設けられ、前記第2半導体領域、前記第3半導体領域および前記第4半導体領域が設けられた活性領域と前記第6半導体領域との間で、当該活性領域を囲む耐圧構造領域と、
前記耐圧構造領域の前記第1半導体領域の表面に、前記活性領域を囲むように設けられた複数の第2導電型の第7半導体領域と、
をさらに備えることを特徴とする請求項6に記載の半導体装置。 - 前記第1半導体領域と前記第5半導体領域との間に第1導電型の第8半導体領域が設けられ、
前記第1半導体領域は、前記第2半導体領域から拡がる空乏層が当該第8半導体領域に到達しない抵抗率を有することを特徴とする請求項1〜7のいずれか一つに記載の半導体装置。 - 前記第8半導体領域は、当該第8半導体領域中の第1導電型不純物の平均不純物量が1.0×1012cm-2以下となる不純物濃度を有することを特徴とする請求項8に記載の半導体装置。
Priority Applications (1)
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JP2010291348A JP5771984B2 (ja) | 2009-12-28 | 2010-12-27 | 半導体装置 |
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JP2009298913 | 2009-12-28 | ||
JP2009298913 | 2009-12-28 | ||
JP2010291348A JP5771984B2 (ja) | 2009-12-28 | 2010-12-27 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2011155257A JP2011155257A (ja) | 2011-08-11 |
JP5771984B2 true JP5771984B2 (ja) | 2015-09-02 |
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JP2010291348A Expired - Fee Related JP5771984B2 (ja) | 2009-12-28 | 2010-12-27 | 半導体装置 |
Country Status (4)
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US (1) | US8334581B2 (ja) |
JP (1) | JP5771984B2 (ja) |
CN (1) | CN102194861B (ja) |
DE (1) | DE102010063728B4 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104145342B (zh) * | 2012-03-16 | 2017-05-24 | 富士电机株式会社 | 半导体装置 |
JP5915756B2 (ja) | 2012-08-22 | 2016-05-11 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
DE112014001296T5 (de) * | 2013-03-13 | 2016-02-25 | Abb Technology Ag | Leistungshalbleitervorrichtung und entsprechendes Modul |
WO2015008458A1 (ja) | 2013-07-17 | 2015-01-22 | 富士電機株式会社 | 半導体装置 |
JP6158123B2 (ja) * | 2014-03-14 | 2017-07-05 | 株式会社東芝 | 半導体装置 |
JP6496992B2 (ja) * | 2014-07-22 | 2019-04-10 | 富士電機株式会社 | 半導体装置 |
DE102015224983B4 (de) * | 2015-12-11 | 2019-01-24 | Siltronic Ag | Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung |
CN107564815B (zh) * | 2016-06-30 | 2021-05-14 | 株洲中车时代半导体有限公司 | 一种制作功率半导体的方法 |
CN107564952B (zh) * | 2016-06-30 | 2021-06-22 | 株洲中车时代半导体有限公司 | 一种功率半导体 |
DE112017005693T5 (de) * | 2016-11-11 | 2019-08-29 | Sumitomo Electric Industries, Ltd. | Siliziumkarbid-Halbleitervorrichtung |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US5766966A (en) * | 1996-02-09 | 1998-06-16 | International Rectifier Corporation | Power transistor device having ultra deep increased concentration region |
JP3458590B2 (ja) | 1996-03-27 | 2003-10-20 | 富士電機株式会社 | 絶縁ゲートバイポーラトランジスタ |
JP3395520B2 (ja) | 1996-06-04 | 2003-04-14 | 富士電機株式会社 | 絶縁ゲートバイポーラトランジスタ |
JPH10178174A (ja) * | 1996-10-18 | 1998-06-30 | Hitachi Ltd | 半導体装置及びそれを使った電力変換装置 |
EP1142026B1 (de) | 1998-12-04 | 2007-11-14 | Infineon Technologies AG | Leistungshalbleiterschalter |
JP4967200B2 (ja) | 2000-08-09 | 2012-07-04 | 富士電機株式会社 | 逆阻止型igbtを逆並列に接続した双方向igbt |
JP5011611B2 (ja) * | 2001-06-12 | 2012-08-29 | 富士電機株式会社 | 半導体装置 |
JP5011634B2 (ja) * | 2003-08-29 | 2012-08-29 | 富士電機株式会社 | 半導体装置およびその半導体装置を用いた双方向スイッチ素子 |
JP4843923B2 (ja) | 2004-09-09 | 2011-12-21 | 富士電機株式会社 | 高耐圧半導体装置およびその製造方法 |
JP5358963B2 (ja) * | 2008-02-04 | 2013-12-04 | 富士電機株式会社 | 半導体装置およびその製造方法 |
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2010
- 2010-12-21 DE DE102010063728.9A patent/DE102010063728B4/de not_active Expired - Fee Related
- 2010-12-22 US US12/975,650 patent/US8334581B2/en active Active
- 2010-12-27 CN CN201010624832.2A patent/CN102194861B/zh not_active Expired - Fee Related
- 2010-12-27 JP JP2010291348A patent/JP5771984B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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CN102194861B (zh) | 2014-11-26 |
CN102194861A (zh) | 2011-09-21 |
DE102010063728B4 (de) | 2016-04-14 |
US20110156210A1 (en) | 2011-06-30 |
DE102010063728A1 (de) | 2011-06-30 |
JP2011155257A (ja) | 2011-08-11 |
US8334581B2 (en) | 2012-12-18 |
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