DE602008002784D1 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE602008002784D1
DE602008002784D1 DE602008002784T DE602008002784T DE602008002784D1 DE 602008002784 D1 DE602008002784 D1 DE 602008002784D1 DE 602008002784 T DE602008002784 T DE 602008002784T DE 602008002784 T DE602008002784 T DE 602008002784T DE 602008002784 D1 DE602008002784 D1 DE 602008002784D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602008002784T
Other languages
English (en)
Inventor
Takashi Kobayashi
Shuntaro Machida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE602008002784D1 publication Critical patent/DE602008002784D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N29/00—Investigating or analysing materials by the use of ultrasonic, sonic or infrasonic waves; Visualisation of the interior of objects by transmitting ultrasonic or sonic waves through the object
    • G01N29/22—Details, e.g. general constructional or apparatus details
    • G01N29/24—Probes
    • G01N29/2406—Electrostatic or capacitive probes, e.g. electret or cMUT-probes
DE602008002784T 2007-05-16 2008-05-16 Halbleiterbauelement Active DE602008002784D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007130980A JP4961260B2 (ja) 2007-05-16 2007-05-16 半導体装置

Publications (1)

Publication Number Publication Date
DE602008002784D1 true DE602008002784D1 (de) 2010-11-11

Family

ID=39650507

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602008002784T Active DE602008002784D1 (de) 2007-05-16 2008-05-16 Halbleiterbauelement

Country Status (4)

Country Link
US (1) US7923795B2 (de)
EP (1) EP1992421B1 (de)
JP (1) JP4961260B2 (de)
DE (1) DE602008002784D1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5329408B2 (ja) * 2007-07-11 2013-10-30 株式会社日立メディコ 超音波探触子及び超音波診断装置
JP5409251B2 (ja) * 2008-11-19 2014-02-05 キヤノン株式会社 電気機械変換装置およびその製造方法
JP5286369B2 (ja) 2009-01-16 2013-09-11 株式会社日立メディコ 超音波探触子の製造方法および超音波探触子
US20110316383A1 (en) * 2009-03-05 2011-12-29 Hitachi Medical Corporation Ultrasonic transducer, method of producing same, and ultrasonic probe using same
JP5409138B2 (ja) * 2009-06-19 2014-02-05 キヤノン株式会社 電気機械変換装置、電気機械変換装置の感度ばらつき検出方法、及び補正方法
WO2011039798A1 (ja) * 2009-09-29 2011-04-07 パイオニア株式会社 Ｍｅｍｓセンサおよびこれを備えたセンサアレイ
WO2011039799A1 (ja) * 2009-09-29 2011-04-07 パイオニア株式会社 センサアレイ
WO2011039797A1 (ja) * 2009-09-29 2011-04-07 パイオニア株式会社 Ｍｅｍｓセンサ
US8617078B2 (en) 2010-03-12 2013-12-31 Hitachi Medical Corporation Ultrasonic transducer and ultrasonic diagnostic device using same
JP5875243B2 (ja) 2011-04-06 2016-03-02 キヤノン株式会社 電気機械変換装置及びその作製方法
JP5875244B2 (ja) * 2011-04-06 2016-03-02 キヤノン株式会社 電気機械変換装置及びその作製方法
US9828236B2 (en) 2012-01-27 2017-11-28 Koninklijke Philips N.V. Capacitive micro-machined transducer and method of manufacturing the same
MX2014008859A (es) 2012-01-27 2014-10-06 Koninkl Philips Nv Transductor micro-mecanizado capacitivo y metodo para la fabricacion del mismo.
JP6064342B2 (ja) * 2012-03-12 2017-01-25 セイコーエプソン株式会社 振動片および電子機器
JP2013219303A (ja) * 2012-04-12 2013-10-24 Hitachi Ltd 半導体装置およびその製造方法
US9364862B2 (en) 2012-11-02 2016-06-14 University Of Windsor Ultrasonic sensor microarray and method of manufacturing same
US9035532B2 (en) * 2012-11-02 2015-05-19 University Of Windsor Ultrasonic sensor microarray and method of manufacturing same
US9857457B2 (en) 2013-03-14 2018-01-02 University Of Windsor Ultrasonic sensor microarray and its method of manufacture
CA2856917A1 (en) 2013-07-19 2015-01-19 University Of Windsor Ultrasonic sensor microarray and method of manufacturing same
JP2016101417A (ja) 2014-11-28 2016-06-02 キヤノン株式会社 静電容量型音響波トランスデューサ及びこれを備えた被検体情報取得装置
JP2016122759A (ja) * 2014-12-25 2016-07-07 キヤノン株式会社 貫通配線を有する電子デバイスの作製方法
US9997425B2 (en) 2015-07-14 2018-06-12 University Of Windsor Layered benzocyclobutene interconnected circuit and method of manufacturing same
JP6184534B2 (ja) * 2016-01-18 2017-08-23 キヤノン株式会社 電気機械変換装置及びその作製方法
JP6904814B2 (ja) 2017-06-30 2021-07-21 キヤノン株式会社 中空構造体の製造方法、及び中空構造体
JP2019075831A (ja) * 2019-02-12 2019-05-16 キヤノン株式会社 静電容量型音響波トランスデューサ及びこれを備えた被検体情報取得装置

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3029624B2 (ja) * 1989-06-21 2000-04-04 トキコ株式会社 給油装置
JPH04356979A (ja) * 1991-05-27 1992-12-10 Matsushita Electric Works Ltd 赤外線センサ
JP3525563B2 (ja) * 1995-06-28 2004-05-10 株式会社デンソー 半導体力学量センサの製造方法
US6727170B2 (en) * 1998-02-16 2004-04-27 Renesas Technology Corp. Semiconductor device having an improved interlayer conductor connections and a manufacturing method thereof
US6271620B1 (en) * 1999-05-20 2001-08-07 Sen Corporation Acoustic transducer and method of making the same
JP4296731B2 (ja) * 2001-07-18 2009-07-15 株式会社デンソー 静電容量型圧力センサの製造方法
US7087023B2 (en) * 2003-02-14 2006-08-08 Sensant Corporation Microfabricated ultrasonic transducers with bias polarity beam profile control and method of operating the same
JP4229122B2 (ja) * 2003-05-26 2009-02-25 株式会社村田製作所 圧電電子部品、およびその製造方法、通信機
JP2004361115A (ja) * 2003-06-02 2004-12-24 Denso Corp 半導体力学量センサ
JP4545401B2 (ja) * 2003-07-22 2010-09-15 パナソニック株式会社 半導体装置の製造方法
JP4419563B2 (ja) * 2003-12-25 2010-02-24 パナソニック株式会社 エレクトレットコンデンサー
EP1761998A4 (de) * 2004-02-27 2011-05-11 Georgia Tech Res Inst Harmonische cmut-vorrichtungen und herstellungsverfahren
EP1779784B1 (de) * 2004-06-07 2015-10-14 Olympus Corporation Ultraschallwandler vom elektrostatischen kapazitätstyp
JP4746291B2 (ja) * 2004-08-05 2011-08-10 オリンパス株式会社 静電容量型超音波振動子、及びその製造方法
JP4244885B2 (ja) * 2004-08-31 2009-03-25 パナソニック株式会社 エレクトレットコンデンサー
KR100611768B1 (ko) * 2004-10-11 2006-08-10 삼성에스디아이 주식회사 유기전계발광표시장치 및 그 제조방법
JP4503423B2 (ja) * 2004-11-29 2010-07-14 富士フイルム株式会社 容量性マイクロマシン超音波振動子及びその製造方法、並びに、超音波トランスデューサアレイ
JP4434109B2 (ja) 2005-09-05 2010-03-17 株式会社日立製作所 電気・音響変換素子
JP4724501B2 (ja) * 2005-09-06 2011-07-13 株式会社日立製作所 超音波トランスデューサおよびその製造方法
JP4724505B2 (ja) * 2005-09-09 2011-07-13 株式会社日立製作所 超音波探触子およびその製造方法
US20070180916A1 (en) 2006-02-09 2007-08-09 General Electric Company Capacitive micromachined ultrasound transducer and methods of making the same

Also Published As

Publication number Publication date
US20080283945A1 (en) 2008-11-20
JP4961260B2 (ja) 2012-06-27
JP2008288813A (ja) 2008-11-27
EP1992421A1 (de) 2008-11-19
US7923795B2 (en) 2011-04-12
EP1992421B1 (de) 2010-09-29

Similar Documents

Publication Publication Date Title
DE602008000468D1 (de) Halbleiterbauelement
DE602008002784D1 (de) Halbleiterbauelement
DE112009000253B8 (de) Halbleitervorrichtung
DE602007013318D1 (de) Halbleiterbauelement
BRPI0814324A2 (pt) Dispositivo
BRPI0822034A2 (pt) Dispositivo
DE602007013972D1 (de) Halbleiterbauelement
BRPI0810906A2 (pt) Dispositivo baseado em personalidade
DE602007002105D1 (de) Halbleiterbauelement
DK2335370T3 (da) Organ-på-en-chip-anordning
DE602008003590D1 (de) Halbleiterbauelement
ES1067341Y (es) Dispositivo perforador-fijador
DK2065524T3 (da) Afløbsindretning
DE502008001742D1 (de) Kabelbearbeitungseinrichtung
DE602007000418D1 (de) Optisches Halbleiterbauelement
DE602007013332D1 (de) Halbleiterspeichervorrichtung
FR2940525B1 (fr) Dispositif semiconducteur
DK2067650T3 (da) Kortslutningsanordning
DE602007002574D1 (de) Halbleiterspeicherelement
FR2940520B1 (fr) Structure semiconductrice
FI20075579A0 (fi) Pitolaite
FI20075216L (fi) Perustusjärjestely
DE502007004666D1 (de) Bearbeitungsvorrichtung
DE602008005610D1 (de) Halbleiterbauelement
FI7629U1 (fi) Laite