DE602007000418D1 - Optisches Halbleiterbauelement - Google Patents
Optisches HalbleiterbauelementInfo
- Publication number
- DE602007000418D1 DE602007000418D1 DE602007000418T DE602007000418T DE602007000418D1 DE 602007000418 D1 DE602007000418 D1 DE 602007000418D1 DE 602007000418 T DE602007000418 T DE 602007000418T DE 602007000418 T DE602007000418 T DE 602007000418T DE 602007000418 D1 DE602007000418 D1 DE 602007000418D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- optical semiconductor
- optical
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
- H01S5/0612—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0265—Intensity modulators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
- H01S5/06255—Controlling the frequency of the radiation
- H01S5/06258—Controlling the frequency of the radiation with DFB-structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
- H01S5/1209—Sampled grating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006096163A JP2007273650A (ja) | 2006-03-30 | 2006-03-30 | 光半導体装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602007000418D1 true DE602007000418D1 (de) | 2009-02-12 |
Family
ID=38066450
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602007000418T Active DE602007000418D1 (de) | 2006-03-30 | 2007-03-26 | Optisches Halbleiterbauelement |
Country Status (4)
Country | Link |
---|---|
US (1) | US7515779B2 (de) |
EP (1) | EP1841025B1 (de) |
JP (1) | JP2007273650A (de) |
DE (1) | DE602007000418D1 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5474338B2 (ja) * | 2008-11-28 | 2014-04-16 | 住友電工デバイス・イノベーション株式会社 | 半導体レーザのチューニング方法 |
US8121169B2 (en) * | 2009-04-14 | 2012-02-21 | Corning Incorporated | Split control of front and rear DBR grating portions |
JP5790336B2 (ja) | 2011-09-01 | 2015-10-07 | 住友電気工業株式会社 | 半導体光集積素子 |
US9172211B2 (en) * | 2011-11-09 | 2015-10-27 | Thorlabs Quantum Electronics, Inc. | Heating elements for multi-wavelength DBR laser |
JP2013115257A (ja) * | 2011-11-29 | 2013-06-10 | Mitsubishi Electric Corp | 光モジュール |
US8861556B2 (en) * | 2012-07-05 | 2014-10-14 | Jds Uniphase Corporation | Tunable Bragg grating and a tunable laser diode using same |
JP6241919B2 (ja) | 2013-09-30 | 2017-12-06 | 住友電工デバイス・イノベーション株式会社 | 光学半導体デバイス |
US9537287B2 (en) * | 2014-10-08 | 2017-01-03 | Futurewei Technologies, Inc. | Thermal compensation for burst-mode laser wavelength drift |
CN107003547A (zh) * | 2014-11-18 | 2017-08-01 | 日本电气株式会社 | 用于光学波导的加热器和用于配置用于光学波导的加热器的方法 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4859876A (en) * | 1985-09-16 | 1989-08-22 | AT&T Bell Laboratories American Telephone and Telegraph Company | Nonlinear optical materials and devices |
US5854870A (en) * | 1990-05-25 | 1998-12-29 | Hitachi, Ltd. | Short-wavelength laser light source |
US5333231A (en) * | 1991-05-02 | 1994-07-26 | Ricoh Company, Ltd. | Wavelength conversion element |
JP2724098B2 (ja) * | 1992-10-07 | 1998-03-09 | 沖電気工業株式会社 | 光波長フィルタ装置 |
JP3449645B2 (ja) * | 1994-07-29 | 2003-09-22 | 富士通株式会社 | 光機能デバイス及びその駆動方法 |
JPH0882705A (ja) * | 1994-09-12 | 1996-03-26 | Anritsu Corp | 光波長選択素子 |
JPH0969666A (ja) * | 1995-09-01 | 1997-03-11 | Oki Electric Ind Co Ltd | 半導体レーザ装置及びその動作方法 |
JP2914248B2 (ja) * | 1995-09-23 | 1999-06-28 | 日本電気株式会社 | 波長可変半導体レーザ素子 |
DE19549245C2 (de) * | 1995-12-19 | 2000-02-17 | Hertz Inst Heinrich | Thermo-optischer Schalter |
US5852702A (en) * | 1996-02-28 | 1998-12-22 | Minolta Co., Ltd. | Thin film optical waveguide and optical deflecting device |
JPH10302942A (ja) * | 1997-04-21 | 1998-11-13 | Teikoku Tsushin Kogyo Co Ltd | 面状ヒータ |
JPH1184324A (ja) * | 1997-09-05 | 1999-03-26 | Fujitsu Ltd | 波長分割多重における光変調のための方法、装置及びシステム |
JP4074724B2 (ja) * | 1999-04-07 | 2008-04-09 | 日本オプネクスト株式会社 | 波長可変光源及びそれを用いた光学装置 |
JP3754615B2 (ja) * | 2000-12-26 | 2006-03-15 | 三菱電機株式会社 | グレーティング用温度制御装置、温度制御パターンを記憶手段に記憶させる方法、グレーティング用温度制御装置を自動制御する方法及び可変分散等化器 |
US7006733B2 (en) * | 2002-09-10 | 2006-02-28 | Photintech, Inc. | Method and apparatus for channel selective control of light propagation in an optical waveguide |
DE10246547B4 (de) * | 2002-09-30 | 2008-05-15 | Finisar Corp., Sunnyvale | Brechungsindexgitter und Modenkoppler mit einem Brechungsindexgitter |
KR100541913B1 (ko) * | 2003-05-02 | 2006-01-10 | 한국전자통신연구원 | 추출 격자 브래그 반사기와 결합된 추출 격자 분포궤환파장가변 반도체 레이저 |
JP4975276B2 (ja) * | 2005-06-14 | 2012-07-11 | 三菱電機株式会社 | 可変分散補償器およびその製造方法 |
-
2006
- 2006-03-30 JP JP2006096163A patent/JP2007273650A/ja active Pending
-
2007
- 2007-03-26 EP EP07104936A patent/EP1841025B1/de active Active
- 2007-03-26 DE DE602007000418T patent/DE602007000418D1/de active Active
- 2007-03-29 US US11/727,959 patent/US7515779B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP1841025A1 (de) | 2007-10-03 |
EP1841025B1 (de) | 2008-12-31 |
US7515779B2 (en) | 2009-04-07 |
US20070230522A1 (en) | 2007-10-04 |
JP2007273650A (ja) | 2007-10-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: SEEGER SEEGER LINDNER PARTNERSCHAFT PATENTANWAELTE |